WO2002073319A1 - Composition de decapage de resine - Google Patents

Composition de decapage de resine Download PDF

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Publication number
WO2002073319A1
WO2002073319A1 PCT/JP2002/002262 JP0202262W WO02073319A1 WO 2002073319 A1 WO2002073319 A1 WO 2002073319A1 JP 0202262 W JP0202262 W JP 0202262W WO 02073319 A1 WO02073319 A1 WO 02073319A1
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WO
WIPO (PCT)
Prior art keywords
resist
composition
compound
water
resist stripping
Prior art date
Application number
PCT/JP2002/002262
Other languages
English (en)
Japanese (ja)
Inventor
Mizuki Takei
Emi Uchida
Takeshi Kotani
Original Assignee
Nagase Chemtex Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nagase Chemtex Corporation filed Critical Nagase Chemtex Corporation
Priority to KR1020037011767A priority Critical patent/KR100831886B1/ko
Priority to JP2002572512A priority patent/JP3928130B2/ja
Publication of WO2002073319A1 publication Critical patent/WO2002073319A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Definitions

  • the present invention relates to a photoresist stripping composition used for manufacturing semiconductor integrated circuits, semiconductor element circuits for liquid crystal panels, and the like. More specifically, the photoresist is effectively peeled off from the substrate and the corrosion of the silicon substrate is suppressed, or amorphous silicon (hereinafter a-Si) and polysilicon (hereinafter a-Si) which are constituent metals of thin film transistors are used. , P—S i) which suppress the dissolution of the photoresist.
  • a-Si amorphous silicon
  • a-Si polysilicon
  • a peeling composition is used.
  • manufacture of a semiconductor element circuit or an associated electrode unit is performed as follows. First, a silicon, a photoresist is uniformly coated on an insulating film such as a C VD Ya metal film formed by sputtering or S i 0 2 film on a substrate such as glass, exposed to light, and developed resist pattern Form. The metal film and the insulating film are etched using the patterned photoresist as a mask. Thereafter, the unnecessary photoresist film is stripped and removed using a stripping composition.
  • the circuit or the electrode portion is formed.
  • the above-mentioned metal film includes, for example, aluminum alloy (A 1); aluminum alloy such as aluminum-em-silicon-copper (A 1—Si i Cu); titanium (T i); titanium nitride Titanium alloys such as (T i N); or silicon such as a-Si and D-Si are used.
  • Al alloy (A 1) aluminum alloy such as aluminum-em-silicon-copper (A 1—Si i Cu)
  • titanium (T i) titanium nitride Titanium alloys such as (T i N); or silicon such as a-Si and D-Si are used.
  • These metal films or insulating films are single-layer or It is formed on a substrate in a plurality of layers.
  • photoresist has been stripped by dissolving a compound such as an organic alkali, an inorganic alkali, an organic acid, or an inorganic acid alone or in combination of two or more in an organic solvent or water, and compounding additives as necessary.
  • a compound such as an organic alkali, an inorganic alkali, an organic acid, or an inorganic acid alone or in combination of two or more in an organic solvent or water, and compounding additives as necessary.
  • Compositions are used.
  • at least one of an alkylamine and an alkylammonium hydroxide, and an organic solvent or water are mainly used to remove resist residues generated during wiring formation. Resist stripping compositions are well known.
  • the non-aqueous stripper consisting of a mixture of monoethanolamine (MEA) and an organic solvent, which is often used at present, does not corrode a-Si and! Si.
  • a non-aqueous stripping solution is inferior in stripping and removing the resist as compared with a water-containing stripping solution.
  • the removal and removal of the altered resist film is inferior to that of the aqueous stripper.
  • non-aqueous strippers must be used at higher temperature conditions than hydrous strippers.
  • a water-based stripping solution consisting of a mixture of monoethanolamine and water contains a—Si and!
  • S i These are unfavorable because they corrode metal constituting a thin film transistor (TFT) element of a liquid crystal display (LCD)). Further, the stripping solution corrodes the silicon substrate, which is not preferable because it may cause dust or particles on the substrate in the manufacture of a semiconductor integrated circuit and may lower the yield.
  • TFT thin film transistor
  • LCD liquid crystal display
  • Japanese Patent Application Laid-Open No. 5-269066 discloses an aqueous solution containing at least one compound selected from the group consisting of aromatic phenolic compounds and aromatic carboxylic acid compounds and an organic amine. The following photoresist stripping solution is described. This stripping solution also rots the silicon substrate, a-Si and p-Si. I can't control food.
  • Japanese Patent Application Laid-Open No. 8-200501 discloses a photoresist stripping composition containing an alkanolamine, an alkoxyamine, an alkoxyalkanolamine, or an acid amide, wherein a saccharide is used as a metal anticorrosive. Or using sugar alcohol. Also, this stripper also has a silicon substrate, a-Si, and! ) One Si corrosion cannot be suppressed.
  • the present invention has been made in order to solve the above-mentioned conventional problems, and has as its object the corrosion of a silicon substrate used in the manufacture of a semiconductor integrated circuit, and the formation of a-Si and p-Si which are constituent metals of a thin film transistor element.
  • An object of the present invention is to provide a resist stripping composition capable of suppressing or preventing dissolution.
  • the resist stripping composition further contains an organic compound containing a thiol group to effectively remove the resist residue, thus corroding the silicon substrate and a-
  • the present inventors have found that the dissolution of Si and p_Si can be favorably suppressed, and have completed the present invention.
  • the resist stripping composition of the present invention contains a nitro group-containing organic compound (A) and a resist stripping agent (B).
  • the nitro group-containing organic compound is at least one compound selected from the group consisting of aromatic and heterocyclic compounds.
  • the resist remover (B) contains at least one amine selected from the group consisting of alkylamines, alkanolamines and quaternary ammonium compounds, and water.
  • the composition further contains a water-soluble organic solvent (C).
  • the content of the nitro group-containing organic compound (A) is 0.01 to 10% by weight, the content of amines is 1 to 94% by weight, and the content of water is 5 to 5%. 885% by weight, and the balance is a water-soluble organic solvent (C).
  • the composition further contains an anticorrosive for aluminum or copper.
  • composition of the present invention includes the nitro group-containing organic compound (A) (hereinafter sometimes referred to as compound A).
  • the following compounds may be used as the organic compound having a dihydroxy group (A): dimethoxy ethane, 2-nitroethanol, 2- (hydroxymethynole) 1-2-2-nitro-1,3-propanediol, etc.
  • Aliphatic nitro compounds o-etroaniline, m -etroaniline, p-tutroaniline, o-nitrophenolone, m-2-trophenol, p-trofenenole, o-nitrone M-Nitrobenzoic acid, P-nitrobenzoic acid, 2-Nitroa-sol, 3-Nitroa-so-one, 4-Nitroanisone, o-Nitrobenzenesnolephonic acid, m-Nitrobenzenesnole Fonic acid,; -nitrobenzenesnolephonic acid, 2-methoxy-4-nitro-phosphorin, 2-amino-1-5-nitrothiazole, 2,3-dimethyl
  • the content of the compound (A) in the resist-stripping composition is preferably from 0.01 to 10% by weight, and more preferably from 0.1 to 5% by weight.
  • the content of the compound (A) is less than 0.01% by weight, the anticorrosion effect on the silicon substrate, a-Si, and p-Si tends not to be obtained. On the other hand, if it exceeds 10% by weight, corrosion on aluminum tends to be severe.
  • a solution generally used in the field of the resist stripping agent for example, a compound such as an acid or a base, or a mixture thereof is used together with water.
  • a resist stripping agent containing, as a base, an amine which is at least one of alkylamine, alkanolamine and quaternary ammonium compounds, and water is used.
  • the above-mentioned amines include the following compounds: alkylamines such as triethylenetetramine, N, N, N ,, N'-tetramethylethylenediamine; monoethanolamine (MEA), diglycolamine Primary alkanolamines such as (DGA); secondary alkanolamines such as N-methylethanolamine, N-ethylethylanolamine, N-butylethanolamine, N, N-diethanolamine; N, N-dimethylethanolamine Min, N, N— Tertiary alkanolamines such as getylethanolamine, N, N-dibutylethanolamine, N-methylol N, N-diethanolamine, N, N-bis (2-hydroxyxethyl) hexylamine; Quaternary am
  • primary alcohols such as monoethanolamine and diglycolamine are preferably used.
  • the amine contained in the resist stripping agent (B) is 1 to 94 weight in the composition. / 0 is preferably included. More preferably, it is 5 to 80% by weight. When the content of amines in the resist stripping agent is less than 1% by weight, the resist residue tends to be hardly removed sufficiently. On the other hand, if it exceeds 94% by weight, the resist residue tends not to be removed because the content of other components is reduced. Water is preferably contained in the composition at a ratio of 5 to 85% by weight, more preferably 5 to 60% by weight, and even more preferably 5 to 40% by weight. When the water content is less than 5% by weight, the resist residue tends to be hardly removed. On the other hand, 8
  • the content exceeds 5% by weight, the content of other components is reduced, so that the effect of sufficiently removing the resist residue and the anticorrosive effect on the silicon substrate, a-Si, and p_Si tend to be hardly obtained. is there.
  • the water-soluble organic solvent (C) which may be contained in the composition of the present invention, the following compounds may be used: diethylene glycol monomethyl ether, polyethylene glycol monomethyl ether ether, and diethylene glycol monomethyl alcohol.
  • diethylene glycol monomethyl ether BDG
  • N-dimethylacetamide N, N-dimethylformamide
  • N-methyl-2-pyrrolidone ⁇ -butyrolatatone
  • dimethylsulfoxide (DMSO) Ethylene glycol / propylene glycol glycol etc.
  • the anticorrosive for metals such as aluminum and copper which may be contained in the composition of the present invention, the following compounds may be used: catechol, 4-t-butyl Lucatechol, 1, 2, 3-benzotriazole, 2-mercaptobenzoimidazole, 2,3-dihydroxynaphthalene, D-sorbitol, benzoic acid, etc.
  • the content of the water-soluble organic solvent (C) is not particularly limited.
  • the balance of the compound (A), the resist stripping agent (B), and the optional compound such as an anticorrosive may be a water-soluble organic solvent (C).
  • At least one compound can be used for each of the compound (A), the resist stripping agent (B), and the water-soluble organic solvent (C).
  • the resist stripping composition of the present invention containing the compound (A), the resist stripping agent (B) and, if necessary, the water-soluble organic solvent (C) is used for stripping the resist from the substrate. Used.
  • a method for using the composition of the present invention will be described with reference to an example in which a semiconductor element is manufactured using a semiconductor substrate or a glass substrate for liquid crystal.
  • a metal film such as a-Si, p-Si, or an insulating film such as SiO 2 is formed on a substrate by CVD, sputtering, or the like.
  • a photoresist is formed thereon, a photomask is placed thereon, exposed, and a process such as development is performed to form a pattern.
  • the metal thin film is etched using the patterned photoresist as an etching mask. Thereafter, the resist is ashed by asshing. The resist residue remaining after incineration is stripped and removed using the composition of the present invention.
  • the photoresist residue is dissolved or peeled and removed.
  • the immersion temperature is usually 24 to 75 ° C, and the immersion time is 30 seconds to 30 minutes. In this way, a semiconductor element having a wiring or the like formed on the surface is manufactured.
  • the photoresist residue is easily peeled off from the substrate surface, and the silicon film itself is corroded or the formed metal film such as a-Si, p-Si is peeled off. There is no.
  • a highly accurate patterned substrate is formed.
  • the silicon substrate was immersed in a 0.5% HF aqueous solution (24 ° C.) for 5 minutes, and the substrate was pretreated by removing the natural oxide film on the silicon substrate surface.
  • the silicon substrate having been subjected to this pretreatment was peeled off using a composition comprising a compound (A), a resist release agent composition (B), and a water-soluble organic solvent (C) as shown in Table 1. It was immersed at 70 ° C for 1 hour. This was washed with pure water and dried naturally with N 2 gas. The surface condition of Si was observed with a scanning microscope (SEM), and the corrosion resistance of silicon was compared.
  • SEM scanning microscope
  • the weight change of the silicon substrate when the above operation was performed was measured.
  • the change in film thickness was determined by dividing the change in weight of the silicon substrate by the specific gravity of silicon and the substrate area. Further, the amount of change in film thickness per hour, that is, the amount of etching of silicon per unit time (etching rate; unit: angstrom) was determined from the change in film thickness and the immersion time.
  • Example 1 is the same as Example 1 except that the compound (A), the resist stripping agent (B), and the water-soluble organic solvent (C) were changed to the amounts of the compounds shown in Table 1.
  • Example 1 is the same as Example 1 except that the compound (A), the resist stripping agent (B), and the water-soluble organic solvent (C) were changed to the compounds and amounts shown in Table 1.
  • MEA monoethanolamine BDG: diethylene glycol monobutyl ether TETA: triethylenetetramine DMSO: dimethyl sulfoxide
  • Example:! No. 9 to No. 9 are compositions containing a nitro group-containing organic compound (A), alkanolamine water as a resist stripping agent (B), and optionally a water-soluble organic solvent (C). It is. As is clear from Table 1, it is understood that the composition having such components has a high performance of removing the resist and has a high silicon corrosion protection.
  • Examples 1 to 4 are compositions in which an aromatic cyclic double-mouthed compound was added to the composition of Comparative Example 1 or Comparative Example 2 (the solvent amount was adjusted; the same applies hereinafter).
  • the etching rate of silicon in the case of using the composition of Comparative Example 1 was 281 ⁇ / min, whereas the etching rate of silicon in Examples 1 and 2 was almost zero.
  • the silicon etching rate was 419 ⁇ / min, while in Examples 3 and 4, the silicon etching rate was almost zero. . From these facts, it is understood that the aromatic nitro compound favorably stops silicon etching in the P direction.
  • the composition of Example 7; the composition of Example 8 in which part of the amines of the composition of Comparative Example 6 was replaced with an aromatic cyclic compound; and the part of the amines of the composition of Comparative Example 7 Also in the case of using the composition of Example 9 in which the compound was replaced with a heterocyclic compound, the etching rate of silicon was almost zero in each case.
  • Comparative Examples 1 and 2 are yarn compositions obtained by removing the organic compound (A) containing an etro group from the compositions shown in Examples 1 to 4. When such a composition was used, the resist was sufficiently removed, but the silicon was severely corroded.
  • Comparative Example 3 is a composition comprising only monoethanolamine. When this composition was used, no corrosion of silicon was observed, but the removal of the resist residue was insufficient. Comparative Examples 4 to 6 are compositions obtained by adding water to monoethanolamine. When these compositions were used, the resist was sufficiently removed, but the silicon was severely corroded.
  • Comparative Example 7 is a composition in which an alkylamine was used as an amine and water was added thereto. When this yarn composition was used, the resist was severely corroded by the sufficiently removed 1S silicon.
  • Comparative Example 8 is a composition containing only a water-soluble organic solvent. When this composition was used, it did not corrode silicon, but hardly removed any resist residue.
  • Comparative Example 9 is a composition in which water was added to a water-soluble organic solvent. With this composition, the silicon did not corrode, but the resist was not removed.
  • Comparative Example 10 is a composition comprising a mixture of monoethanolamine and diethylene glycol monobutyl ether. When this composition was used, the silicon did not corrode, but the resist residue was not sufficiently removed.
  • Comparative Examples 11 to 18 are compositions in which a generally known metal anticorrosive was added to a resist stripper (B). When these compositions were used, resist residues were sufficiently removed, but silicon corrosion could not be suppressed.
  • a film was formed by sputtering in the order of A 1 and Ti, and then a photoresist was formed on the surface with a thickness of 1 Atm.
  • the film was exposed to light at 100 ° C. for 2 minutes, placed on a photomask and exposed, and then developed using a 2.38% aqueous solution of tetramethylammonium hydroxide (TMAH).
  • TMAH tetramethylammonium hydroxide
  • the A 1 / T i film de dry etching by C 1 2 and BC 1 3 gas to obtain a substrate having an A 1 film with a predetermined pattern.
  • the photoresist was lightly ashesed with oxygen.
  • This substrate was placed in a stripping composition (stripping solution) having the composition shown in Table 2 at 40 ° C. After immersion for 10 minutes, the substrate was washed with pure water, and the pure water was blown off with an air gun using N 2 gas, followed by natural drying. Then, the extent of photoresist removal and A1 corrosion protection were observed by scanning electron microscope (SEM). They were evaluated according to the following criteria.
  • A1 corrosion is slightly observed but A1 line width is not reduced.
  • X A1 line width is reduced.
  • Example 10 was the same as Example 10 except that the composition of the stripping solution was changed as shown in Table 2.
  • BDG Diethylene glycol monobuter-ter
  • a semiconductor device was manufactured as follows. First, an a-Si metal film is formed on a semiconductor substrate by sputtering, and anneal! ) One Si. A photoresist was formed on the p-Si film, a mask was mounted, and exposure was performed. This was developed to form a pattern. The metal thin film was etched using the patterned photoresist as an etching mask. Thereafter, oxygen plasma asshing was performed to ash the resist. This substrate was immersed in the resist-stripping composition of Example 1 at 70 ° C. for 20 minutes. As a result, the remaining resist residue was removed. Thus, a semiconductor device having a desired pattern formed on the surface was obtained. Industrial applicability
  • a resist stripping composition containing a nitro group-containing organic compound (A), a resist stripping agent (B) and, if necessary, a water-soluble organic solvent (C).
  • resist stripping composition of the present invention By using the resist stripping composition of the present invention to remove resist residues generated during wiring formation in the process of manufacturing semiconductor or liquid crystal element circuits, resist residues are removed with high performance. In addition, corrosion of a-Si and p-Si, which are constituent metals of a silicon substrate used for manufacturing a semiconductor integrated circuit or a thin film transistor, can be prevented or largely suppressed.
  • the resist stripping composition of the present invention is suitably used in a process of manufacturing an electronic circuit or the like for a semiconductor or a liquid crystal.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

La présente invention concerne une composition de décapage de résine comportant un groupe nitro comprenant un composé organique (A) et un agent de décapage de résine (B). La composition de décapage de résine peut être utilisée pour éliminer avec une efficacité élevée un résidu de résine formé durant l'opération de câblage dans un procédé de production d'un circuit électronique ou analogue pour un semi-conducteur ou un cristal liquide, tout en éliminant la corrosion d'un substrat de silicium et en empêchant efficacement la corrosion de a-Si et p-Si qui sont de métaux constitutifs d'un transistor à couches minces.
PCT/JP2002/002262 2001-03-13 2002-03-11 Composition de decapage de resine WO2002073319A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020037011767A KR100831886B1 (ko) 2001-03-13 2002-03-11 실리콘 부식방지 특성을 갖는 수성 내식막 박리용 조성물
JP2002572512A JP3928130B2 (ja) 2001-03-13 2002-03-11 レジスト剥離用組成物

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-071031 2001-03-13
JP2001071031 2001-03-13

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WO2002073319A1 true WO2002073319A1 (fr) 2002-09-19

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Application Number Title Priority Date Filing Date
PCT/JP2002/002262 WO2002073319A1 (fr) 2001-03-13 2002-03-11 Composition de decapage de resine

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JP (1) JP3928130B2 (fr)
KR (1) KR100831886B1 (fr)
CN (1) CN1280679C (fr)
TW (1) TWI275903B (fr)
WO (1) WO2002073319A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005148313A (ja) * 2003-11-13 2005-06-09 Hoya Corp マスクブランクスの製造方法及び転写マスクの製造方法
JP2010244075A (ja) * 2010-07-06 2010-10-28 Hoya Corp マスクブランクスの製造方法及び転写マスクの製造方法
WO2016035843A1 (fr) * 2014-09-04 2016-03-10 横浜油脂工業株式会社 Décapant pour matériau de revêtement durcissable par rayonnement ultraviolet

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US20060154186A1 (en) * 2005-01-07 2006-07-13 Advanced Technology Materials, Inc. Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
US7655608B2 (en) * 2007-08-03 2010-02-02 Dynaloy, Llc Reduced metal etch rates using stripper solutions containing a copper salt
CN102163011A (zh) * 2011-04-29 2011-08-24 西安东旺精细化学有限公司 一种光致抗蚀剂的剥离液组合物
CN104049477B (zh) * 2014-05-30 2017-12-19 江苏弘汉生物科技有限公司 抗蚀剂剥离剂
CN107820584B (zh) * 2016-09-30 2019-10-18 松下知识产权经营株式会社 抗蚀剂剥离液
CN107980105B (zh) * 2016-11-29 2019-10-18 松下知识产权经营株式会社 抗蚀剂剥离液
CN107346095B (zh) * 2017-09-14 2020-12-22 江阴江化微电子材料股份有限公司 一种半导体制程正性光刻胶去胶液及应用

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WO1999020408A1 (fr) * 1997-10-16 1999-04-29 Ashland Inc. Ameliorations apportees a des compositions aqueuses de depouillage et de nettoyage
EP1031884A2 (fr) * 1999-02-25 2000-08-30 Mitsubishi Gas Chemical Company, Inc. Agent pour le retrait d'un photoresist et procédé de fabrication de dispositifs semi-conducteurs utilisant ledit agent
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EP0267540A2 (fr) * 1986-11-10 1988-05-18 J.T. Baker Inc. Compositions pour le dépouillement et leur utilisation pour dépouiller les couches de réserves sur substrat
JPH05259066A (ja) * 1992-03-13 1993-10-08 Texas Instr Japan Ltd ポジ型フォトレジスト用剥離液および半導体装置の製造方法
EP0678788A2 (fr) * 1994-04-18 1995-10-25 Ocg Microelectronic Materials, Inc. Composition non corrosive pour décaper des films photoresist
WO1999020408A1 (fr) * 1997-10-16 1999-04-29 Ashland Inc. Ameliorations apportees a des compositions aqueuses de depouillage et de nettoyage
EP1031884A2 (fr) * 1999-02-25 2000-08-30 Mitsubishi Gas Chemical Company, Inc. Agent pour le retrait d'un photoresist et procédé de fabrication de dispositifs semi-conducteurs utilisant ledit agent
JP2001022095A (ja) * 1999-07-02 2001-01-26 Nippon Zeon Co Ltd ポジ型レジスト用剥離液

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005148313A (ja) * 2003-11-13 2005-06-09 Hoya Corp マスクブランクスの製造方法及び転写マスクの製造方法
JP4566547B2 (ja) * 2003-11-13 2010-10-20 Ｈｏｙａ株式会社 マスクブランクスの製造方法及び転写マスクの製造方法
JP2010244075A (ja) * 2010-07-06 2010-10-28 Hoya Corp マスクブランクスの製造方法及び転写マスクの製造方法
JP4688966B2 (ja) * 2010-07-06 2011-05-25 Ｈｏｙａ株式会社 マスクブランクスの製造方法及び転写マスクの製造方法
WO2016035843A1 (fr) * 2014-09-04 2016-03-10 横浜油脂工業株式会社 Décapant pour matériau de revêtement durcissable par rayonnement ultraviolet

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CN1496497A (zh) 2004-05-12
TWI275903B (en) 2007-03-11
KR100831886B1 (ko) 2008-05-23
JP3928130B2 (ja) 2007-06-13
KR20040030532A (ko) 2004-04-09
CN1280679C (zh) 2006-10-18
JPWO2002073319A1 (ja) 2004-07-02

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