KR101413380B1 - 반도체 다이의 제조방법, 상기 방법으로 제조된 반도체다이를 포함하는 반도체 소자 - Google Patents

반도체 다이의 제조방법, 상기 방법으로 제조된 반도체다이를 포함하는 반도체 소자 Download PDF

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KR101413380B1
KR101413380B1 KR1020070086787A KR20070086787A KR101413380B1 KR 101413380 B1 KR101413380 B1 KR 101413380B1 KR 1020070086787 A KR1020070086787 A KR 1020070086787A KR 20070086787 A KR20070086787 A KR 20070086787A KR 101413380 B1 KR101413380 B1 KR 101413380B1
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fluorine
wafer
based polymer
semiconductor
dicing
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Korean (ko)
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KR20090021897A (ko
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조광제
장경호
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쓰리엠 이노베이티브 프로퍼티즈 캄파니
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Application filed by 쓰리엠 이노베이티브 프로퍼티즈 캄파니 filed Critical 쓰리엠 이노베이티브 프로퍼티즈 캄파니
Priority to US12/672,899 priority patent/US8518805B2/en
Priority to EP08798328A priority patent/EP2186129A4/en
Priority to PCT/US2008/073797 priority patent/WO2009032536A2/en
Priority to CN200880104976.6A priority patent/CN101796629B/zh
Priority to JP2010523043A priority patent/JP5587778B2/ja
Priority to TW097132738A priority patent/TWI458002B/zh
Publication of KR20090021897A publication Critical patent/KR20090021897A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene

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  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Die Bonding (AREA)
KR1020070086787A 2007-08-28 2007-08-28 반도체 다이의 제조방법, 상기 방법으로 제조된 반도체다이를 포함하는 반도체 소자 Active KR101413380B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020070086787A KR101413380B1 (ko) 2007-08-28 2007-08-28 반도체 다이의 제조방법, 상기 방법으로 제조된 반도체다이를 포함하는 반도체 소자
EP08798328A EP2186129A4 (en) 2007-08-28 2008-08-21 METHOD FOR PRODUCING A SEMICONDUCTOR CHIP AND SEMICONDUCTOR ELEMENT COMPRISING THE SEMICONDUCTOR CHIP OBTAINED THEREWITH
PCT/US2008/073797 WO2009032536A2 (en) 2007-08-28 2008-08-21 Method for manufacturing a semiconductor die and a semiconductor device comprising the semiconductor die obtained thereby
CN200880104976.6A CN101796629B (zh) 2007-08-28 2008-08-21 制造半导体芯片的方法以及包含通过该方法获得的半导体芯片的半导体器件
US12/672,899 US8518805B2 (en) 2007-08-28 2008-08-21 Method for manufacturing a semiconductor die and a semiconductor device comprising the semiconductor die obtained thereby
JP2010523043A JP5587778B2 (ja) 2007-08-28 2008-08-21 半導体ダイの製造方法及びこれにより得られる半導体ダイを含む半導体デバイス
TW097132738A TWI458002B (zh) 2007-08-28 2008-08-27 用於製造半導體晶粒之方法及包含藉此方法獲得之該半導體晶粒的半導體裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070086787A KR101413380B1 (ko) 2007-08-28 2007-08-28 반도체 다이의 제조방법, 상기 방법으로 제조된 반도체다이를 포함하는 반도체 소자

Publications (2)

Publication Number Publication Date
KR20090021897A KR20090021897A (ko) 2009-03-04
KR101413380B1 true KR101413380B1 (ko) 2014-06-30

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Country Status (7)

Country Link
US (1) US8518805B2 (enExample)
EP (1) EP2186129A4 (enExample)
JP (1) JP5587778B2 (enExample)
KR (1) KR101413380B1 (enExample)
CN (1) CN101796629B (enExample)
TW (1) TWI458002B (enExample)
WO (1) WO2009032536A2 (enExample)

Families Citing this family (18)

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Publication number Priority date Publication date Assignee Title
JP2012198477A (ja) * 2011-03-23 2012-10-18 Fujifilm Corp レンズの製造方法
US9236837B2 (en) 2011-08-25 2016-01-12 Infineon Technologies Ag System and method for low distortion capacitive signal source amplifier
US8995690B2 (en) 2011-11-28 2015-03-31 Infineon Technologies Ag Microphone and method for calibrating a microphone
US8638249B2 (en) 2012-04-16 2014-01-28 Infineon Technologies Ag System and method for high input capacitive signal amplifier
US9281744B2 (en) 2012-04-30 2016-03-08 Infineon Technologies Ag System and method for a programmable voltage source
US9214911B2 (en) 2012-08-30 2015-12-15 Infineon Technologies Ag System and method for adjusting the sensitivity of a capacitive signal source
US8916453B2 (en) 2012-11-21 2014-12-23 Infineon Technologies Ag Method for manufacturing an electronic component
US9332369B2 (en) 2013-10-22 2016-05-03 Infineon Technologies Ag System and method for automatic calibration of a transducer
KR101709689B1 (ko) 2013-12-19 2017-02-23 주식회사 엘지화학 다이싱 필름 점착층 형성용 조성물 및 다이싱 필름
JP6887722B2 (ja) * 2016-10-25 2021-06-16 株式会社ディスコ ウェーハの加工方法及び切削装置
JP6837859B2 (ja) * 2017-02-14 2021-03-03 株式会社ディスコ ウエーハの加工方法
US10269756B2 (en) 2017-04-21 2019-04-23 Invensas Bonding Technologies, Inc. Die processing
TW202045640A (zh) * 2018-01-19 2020-12-16 南韓商Ｍｔｉ股份有限公司 切片製程用保護性塗層劑
JP6927619B2 (ja) * 2018-01-19 2021-09-01 エムティーアイ カンパニー, リミテッドMti Co., Ltd. ダイシング工程用保護コーティング剤剥離用剥離剤
US10727219B2 (en) * 2018-02-15 2020-07-28 Invensas Bonding Technologies, Inc. Techniques for processing devices
US20230003648A1 (en) * 2020-03-20 2023-01-05 GeneSense Technology Inc. High throughput analytical system for molecule detection and sensing
US11742314B2 (en) 2020-03-31 2023-08-29 Adeia Semiconductor Bonding Technologies Inc. Reliable hybrid bonded apparatus
CN117397019A (zh) 2021-03-31 2024-01-12 美商艾德亚半导体接合科技有限公司 直接结合方法和结构

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63117445A (ja) * 1986-11-05 1988-05-21 Citizen Watch Co Ltd 半導体ウエハ−の加工方法
JPH05144938A (ja) * 1991-09-26 1993-06-11 Toshiba Corp 固体撮像装置の製造方法
JP2001102330A (ja) * 1999-10-01 2001-04-13 Matsushita Electronics Industry Corp 基板の製造方法
JP2007056134A (ja) * 2005-08-24 2007-03-08 Asahi Glass Co Ltd レジスト保護膜

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1046062A (ja) * 1996-08-08 1998-02-17 Daikin Ind Ltd 可剥離性塗料組成物
KR100283192B1 (ko) * 1998-06-09 2001-04-02 윤종용 반구형결정가입자들을갖는캐패시터의제조방법
JP2003273043A (ja) * 2002-03-19 2003-09-26 Iwate Toshiba Electronics Co Ltd 半導体装置の製造方法
DE60315650T2 (de) 2002-06-24 2008-06-05 3M Innovative Properties Co., St. Paul Wärmehärtbare klebstoffzusammensetzung, gegenstand, halbleitervorrichtung und verfahren
JP2004099833A (ja) * 2002-09-12 2004-04-02 Three M Innovative Properties Co 熱硬化性接着剤組成物、フィルム接着剤及び半導体装置
JP4368093B2 (ja) * 2002-06-24 2009-11-18 スリーエム イノベイティブ プロパティズ カンパニー フィルム接着剤、半導体装置及びその製造方法
JP3595323B2 (ja) * 2002-11-22 2004-12-02 沖電気工業株式会社 半導体装置及びその製造方法
CN100433294C (zh) * 2004-01-13 2008-11-12 东京毅力科创株式会社 半导体装置的制造方法以及成膜系统
JP4704017B2 (ja) * 2004-12-09 2011-06-15 日東電工株式会社 被着物の加熱剥離方法及び被着物加熱剥離装置
JP4482760B2 (ja) * 2005-04-26 2010-06-16 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
KR100652442B1 (ko) * 2005-11-09 2006-12-01 삼성전자주식회사 반도체 칩 및 그 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63117445A (ja) * 1986-11-05 1988-05-21 Citizen Watch Co Ltd 半導体ウエハ−の加工方法
JPH05144938A (ja) * 1991-09-26 1993-06-11 Toshiba Corp 固体撮像装置の製造方法
JP2001102330A (ja) * 1999-10-01 2001-04-13 Matsushita Electronics Industry Corp 基板の製造方法
JP2007056134A (ja) * 2005-08-24 2007-03-08 Asahi Glass Co Ltd レジスト保護膜

Also Published As

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EP2186129A2 (en) 2010-05-19
US8518805B2 (en) 2013-08-27
JP2010538468A (ja) 2010-12-09
TWI458002B (zh) 2014-10-21
WO2009032536A3 (en) 2009-04-30
CN101796629A (zh) 2010-08-04
TW200931511A (en) 2009-07-16
JP5587778B2 (ja) 2014-09-10
KR20090021897A (ko) 2009-03-04
US20110175243A1 (en) 2011-07-21
EP2186129A4 (en) 2012-10-17
CN101796629B (zh) 2014-01-08
WO2009032536A2 (en) 2009-03-12

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