JP4758613B2 - フォトレジスト除去液及びこれを利用した半導体素子のバンプ形成方法 - Google Patents
フォトレジスト除去液及びこれを利用した半導体素子のバンプ形成方法 Download PDFInfo
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- JP4758613B2 JP4758613B2 JP2004046348A JP2004046348A JP4758613B2 JP 4758613 B2 JP4758613 B2 JP 4758613B2 JP 2004046348 A JP2004046348 A JP 2004046348A JP 2004046348 A JP2004046348 A JP 2004046348A JP 4758613 B2 JP4758613 B2 JP 4758613B2
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- 229920002120 photoresistant polymer Polymers 0.000 title claims description 113
- 238000000034 method Methods 0.000 title claims description 62
- 239000004065 semiconductor Substances 0.000 title claims description 33
- 239000007788 liquid Substances 0.000 title description 16
- 230000001681 protective effect Effects 0.000 claims description 37
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- 239000010410 layer Substances 0.000 claims description 23
- 238000007747 plating Methods 0.000 claims description 23
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 18
- 229920001721 polyimide Polymers 0.000 claims description 16
- 239000004642 Polyimide Substances 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 238000009713 electroplating Methods 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000011241 protective layer Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000004380 ashing Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Description
実施例1乃至実施例5、及び、比較例1乃至6
容器にモノエタノールアミン(MEA)及びジメチルアセトアミド(DMAC)を入れて、これを混合し、下記表1に示したような組成(単位:質量%)を有する除去液を製造した。
前記実施例1乃至5、及び、比較例1乃至6で製造したフォトレジスト除去液を利用して、一定間隔及び厚さを有するフォトレジストパターンに対する除去程度を評価した。
前記実施例2のフォトレジスト除去液を使用して、前記フォトレジスト除去液の適用温度及び時間を変化させながら、前記フォトレジスト除去評価1と同様にしてフォトレジストパターンの除去率を評価した。
105 開口部、
110 基板、
120 ポリイミドパターン、
130 鍍金シード層、
131 鍍金シード層パターン、
140 フォトレジスト膜、
145 バンプ開口部、
150 フォトレジストパターン、
160 バンプ。
Claims (14)
- 金属配線パターンが形成された基板上に、前記金属配線パターンの上部を部分的に露出する開口部を有する保護膜パターンを形成する段階と、
前記保護膜パターン上に前記保護膜パターン開口部を露出するバンプ開口部を有するフォトレジストパターンを形成する段階と、
前記バンプ開口部に金属を成長させてバンプを形成する段階と、
前記フォトレジストパターンをモノエタノールアミン及びジメチルアセトアミドを主成分に含有するフォトレジスト除去液で除去する段階と、を含むことを特徴とする半導体素子のバンプ形成方法であって、
前記フォトレジスト除去液の組成は、前記モノエタノールアミンの含量は20〜30質量%であり、前記ジメチルアセトアミドの含量は70〜80質量%であり、かつ60℃以上70℃以下で、30分以上40分以下前記フォトレジストパターンに適用することを特徴とする半導体素子のバンプ形成方法。 - 前記金属配線パターンはアルミニウムからなることを特徴とする請求項1に記載の半導体素子のバンプ形成方法。
- 前記フォトレジストパターンは、20μm以上の厚さに形成することを特徴とする請求項1または2に記載の半導体素子のバンプ形成方法。
- 前記保護膜パターン開口部により露出された金属配線パターン上部、前記保護膜パターン開口部の側壁及び前記保護膜パターン上に、連続的に鍍金シード層を形成する段階をさらに含むことを特徴とする請求項1〜3のいずれか1項に記載の半導体素子のバンプ形成方法。
- 前記バンプは、前記フォトレジストパターンのバンプ開口部により露出された鍍金シード層上に、金を鍍金して形成することを特徴とする請求項1〜4のいずれか1項に記載の半導体素子のバンプ形成方法。
- 前記バンプは、前記フォトレジストパターンの厚さより薄くなるように形成することを特徴とする請求項1〜5のいずれか1項に記載の半導体素子のバンプ形成方法。
- 前記保護膜パターンは、ポリイミドからなることを特徴とする請求項1〜6のいずれか1項に記載の半導体素子のバンプ形成方法。
- 前記バンプ開口部は、前記保護膜パターン開口部を完全に露出し、前記保護膜パターン開口部及び前記保護膜パターン開口部周辺の保護膜パターンを部分的に露出するように前記保護膜パターン開口部より大きくなるように形成されることを特徴とする請求項1〜7のいずれか1項に記載の半導体素子のバンプ形成方法。
- アルミニウムパターンが形成された基板上に、前記アルミニウムパターンの上部を部分的に露出させる開口部を有する保護膜パターンを形成する段階と、
前記保護膜パターン開口部により露出されたアルミニウムパターン、前記保護膜パターン開口部の側壁及び前記保護膜パターン上に連続的に鍍金シード層を形成する段階と、
前記鍍金シード層上に前記保護膜パターン開口部を露出するバンプ開口部を有するフォトレジストパターンを形成する段階と、
前記バンプ開口部に電気鍍金により金を成長させてバンプを形成する段階と、
前記フォトレジストパターンをモノエタノールアミン20〜30質量%及びジメチルアセトアミド70〜80質量%含有するフォトレジスト除去液により除去する段階からなることを特徴とする、請求項1に記載の半導体素子のバンプ形成方法。 - 前記フォトレジストパターンは、20μm以上の厚さに形成することを特徴とする請求項9に記載の半導体素子のバンプ形成方法。
- 前記バンプは、前記フォトレジストパターンの厚さより薄くなるように形成することを特徴とする請求項9または10のいずれか1項に記載の半導体素子のバンプ形成方法。
- 前記保護膜パターンは、ポリイミドからなることを特徴とする請求項9〜11のいずれか1項に記載の半導体素子のバンプ形成方法。
- 前記バンプ開口部は、前記保護膜パターン開口部を完全に露出し、前記保護膜パターン開口部底面及び側壁と、前記保護膜パターン開口部の周辺に形成された鍍金シード層を部分的に露出するように前記保護膜パターン開口部より大きくなるように形成されることを特徴とする請求項9〜12のいずれか1項に記載の半導体素子のバンプ形成方法。
- 前記フォトレジストパターンを除去した後、前記フォトレジストパターンの下に存在する鍍金シード層を部分的に除去することを特徴とする請求項9〜13のいずれか1項に記載の半導体素子のバンプ形成方法。
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TWI246733B (en) * | 2005-05-04 | 2006-01-01 | Siliconware Precision Industries Co Ltd | Fabrication method of under bump metallurgy structure |
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JP2007048887A (ja) * | 2005-08-09 | 2007-02-22 | Seiko Epson Corp | 半導体装置およびその製造方法 |
JP2007220959A (ja) * | 2006-02-17 | 2007-08-30 | Fujitsu Ltd | 半導体装置及びその製造方法 |
KR100794660B1 (ko) * | 2006-07-14 | 2008-01-14 | 삼성전자주식회사 | 이미지 센서 패키지 및 그 제조 방법 |
US7858521B2 (en) * | 2006-12-21 | 2010-12-28 | Palo Alto Research Center Incorporated | Fabrication for electroplating thick metal pads |
KR100874588B1 (ko) * | 2007-09-05 | 2008-12-16 | 성균관대학교산학협력단 | 전기적 특성 평가가 가능한 플립칩 및 이것의 제조 방법 |
USRE48422E1 (en) * | 2007-09-05 | 2021-02-02 | Research & Business Foundation Sungkyunkwan Univ. | Method of making flip chip |
US7713861B2 (en) * | 2007-10-13 | 2010-05-11 | Wan-Ling Yu | Method of forming metallic bump and seal for semiconductor device |
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JPS63231343A (ja) * | 1987-03-20 | 1988-09-27 | Hitachi Ltd | レジストパタ−ンの剥離液 |
JPH04155835A (ja) * | 1990-10-18 | 1992-05-28 | Mitsubishi Electric Corp | 集積回路装置の製造方法 |
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JP3209918B2 (ja) | 1996-04-18 | 2001-09-17 | 富士通株式会社 | 剥離液及びそれを使用した半導体装置の製造方法 |
US5798323A (en) | 1997-05-05 | 1998-08-25 | Olin Microelectronic Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
US6417112B1 (en) | 1998-07-06 | 2002-07-09 | Ekc Technology, Inc. | Post etch cleaning composition and process for dual damascene system |
JP3389166B2 (ja) * | 1999-09-10 | 2003-03-24 | 日本電気株式会社 | レジスト用剥離液組成物 |
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JP2003023022A (ja) * | 2001-07-09 | 2003-01-24 | Sanyo Electric Co Ltd | バンプ電極の導通試験構造 |
JP4179769B2 (ja) * | 2001-10-12 | 2008-11-12 | シャープ株式会社 | 半導体装置の製造方法 |
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