TWI458002B - 用於製造半導體晶粒之方法及包含藉此方法獲得之該半導體晶粒的半導體裝置 - Google Patents

用於製造半導體晶粒之方法及包含藉此方法獲得之該半導體晶粒的半導體裝置 Download PDF

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Publication number
TWI458002B
TWI458002B TW097132738A TW97132738A TWI458002B TW I458002 B TWI458002 B TW I458002B TW 097132738 A TW097132738 A TW 097132738A TW 97132738 A TW97132738 A TW 97132738A TW I458002 B TWI458002 B TW I458002B
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TW
Taiwan
Prior art keywords
fluorine
fluoropolymer
wafer
compound
solvent
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TW097132738A
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English (en)
Chinese (zh)
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TW200931511A (en
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趙光濟
張敬豪
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３Ｍ新設資產公司
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Publication of TW200931511A publication Critical patent/TW200931511A/zh
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    • H10P95/00—
    • H10P54/00—
    • H10P14/6342—
    • H10P14/687—

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  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Die Bonding (AREA)
TW097132738A 2007-08-28 2008-08-27 用於製造半導體晶粒之方法及包含藉此方法獲得之該半導體晶粒的半導體裝置 TWI458002B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070086787A KR101413380B1 (ko) 2007-08-28 2007-08-28 반도체 다이의 제조방법, 상기 방법으로 제조된 반도체다이를 포함하는 반도체 소자

Publications (2)

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TW200931511A TW200931511A (en) 2009-07-16
TWI458002B true TWI458002B (zh) 2014-10-21

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TW097132738A TWI458002B (zh) 2007-08-28 2008-08-27 用於製造半導體晶粒之方法及包含藉此方法獲得之該半導體晶粒的半導體裝置

Country Status (7)

Country Link
US (1) US8518805B2 (enExample)
EP (1) EP2186129A4 (enExample)
JP (1) JP5587778B2 (enExample)
KR (1) KR101413380B1 (enExample)
CN (1) CN101796629B (enExample)
TW (1) TWI458002B (enExample)
WO (1) WO2009032536A2 (enExample)

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JP2012198477A (ja) * 2011-03-23 2012-10-18 Fujifilm Corp レンズの製造方法
US9236837B2 (en) 2011-08-25 2016-01-12 Infineon Technologies Ag System and method for low distortion capacitive signal source amplifier
US8995690B2 (en) 2011-11-28 2015-03-31 Infineon Technologies Ag Microphone and method for calibrating a microphone
US8638249B2 (en) 2012-04-16 2014-01-28 Infineon Technologies Ag System and method for high input capacitive signal amplifier
US9281744B2 (en) 2012-04-30 2016-03-08 Infineon Technologies Ag System and method for a programmable voltage source
US9214911B2 (en) 2012-08-30 2015-12-15 Infineon Technologies Ag System and method for adjusting the sensitivity of a capacitive signal source
US8916453B2 (en) 2012-11-21 2014-12-23 Infineon Technologies Ag Method for manufacturing an electronic component
US9332369B2 (en) 2013-10-22 2016-05-03 Infineon Technologies Ag System and method for automatic calibration of a transducer
KR101709689B1 (ko) 2013-12-19 2017-02-23 주식회사 엘지화학 다이싱 필름 점착층 형성용 조성물 및 다이싱 필름
JP6887722B2 (ja) * 2016-10-25 2021-06-16 株式会社ディスコ ウェーハの加工方法及び切削装置
JP6837859B2 (ja) * 2017-02-14 2021-03-03 株式会社ディスコ ウエーハの加工方法
US10269756B2 (en) 2017-04-21 2019-04-23 Invensas Bonding Technologies, Inc. Die processing
TWI677543B (zh) * 2018-01-19 2019-11-21 南韓商Ｍｔｉ股份有限公司 切片工藝用保護性塗層劑的剝離劑
TW202045640A (zh) * 2018-01-19 2020-12-16 南韓商Ｍｔｉ股份有限公司 切片製程用保護性塗層劑
US10727219B2 (en) 2018-02-15 2020-07-28 Invensas Bonding Technologies, Inc. Techniques for processing devices
WO2021184374A1 (en) * 2020-03-20 2021-09-23 Genesense Technology Inc High throughput analytical system for molecule detection and sensing
US11742314B2 (en) 2020-03-31 2023-08-29 Adeia Semiconductor Bonding Technologies Inc. Reliable hybrid bonded apparatus

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TW412865B (en) * 1998-06-09 2000-11-21 Samsung Electronics Co Ltd Method for fabricating capacitors with hemispherical grains
WO2004000966A1 (en) * 2002-06-24 2003-12-31 3M Innovative Properties Company Heat curable adhesive composition, article, semiconductor apparatus and method
JP2007056134A (ja) * 2005-08-24 2007-03-08 Asahi Glass Co Ltd レジスト保護膜

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JPS63117445A (ja) * 1986-11-05 1988-05-21 Citizen Watch Co Ltd 半導体ウエハ−の加工方法
JPH05144938A (ja) * 1991-09-26 1993-06-11 Toshiba Corp 固体撮像装置の製造方法
JPH1046062A (ja) * 1996-08-08 1998-02-17 Daikin Ind Ltd 可剥離性塗料組成物
JP4318353B2 (ja) * 1999-10-01 2009-08-19 パナソニック株式会社 基板の製造方法
JP2003273043A (ja) * 2002-03-19 2003-09-26 Iwate Toshiba Electronics Co Ltd 半導体装置の製造方法
JP2004099833A (ja) * 2002-09-12 2004-04-02 Three M Innovative Properties Co 熱硬化性接着剤組成物、フィルム接着剤及び半導体装置
JP4368093B2 (ja) * 2002-06-24 2009-11-18 スリーエム イノベイティブ プロパティズ カンパニー フィルム接着剤、半導体装置及びその製造方法
JP3595323B2 (ja) * 2002-11-22 2004-12-02 沖電気工業株式会社 半導体装置及びその製造方法
CN100433294C (zh) * 2004-01-13 2008-11-12 东京毅力科创株式会社 半导体装置的制造方法以及成膜系统
JP4704017B2 (ja) * 2004-12-09 2011-06-15 日東電工株式会社 被着物の加熱剥離方法及び被着物加熱剥離装置
JP4482760B2 (ja) * 2005-04-26 2010-06-16 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW412865B (en) * 1998-06-09 2000-11-21 Samsung Electronics Co Ltd Method for fabricating capacitors with hemispherical grains
WO2004000966A1 (en) * 2002-06-24 2003-12-31 3M Innovative Properties Company Heat curable adhesive composition, article, semiconductor apparatus and method
JP2007056134A (ja) * 2005-08-24 2007-03-08 Asahi Glass Co Ltd レジスト保護膜

Also Published As

Publication number Publication date
EP2186129A2 (en) 2010-05-19
EP2186129A4 (en) 2012-10-17
TW200931511A (en) 2009-07-16
WO2009032536A2 (en) 2009-03-12
KR101413380B1 (ko) 2014-06-30
US8518805B2 (en) 2013-08-27
JP5587778B2 (ja) 2014-09-10
US20110175243A1 (en) 2011-07-21
JP2010538468A (ja) 2010-12-09
CN101796629B (zh) 2014-01-08
CN101796629A (zh) 2010-08-04
WO2009032536A3 (en) 2009-04-30
KR20090021897A (ko) 2009-03-04

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