KR101399801B1 - 기판 처리 방법 및 기판 처리 시스템 - Google Patents

기판 처리 방법 및 기판 처리 시스템 Download PDF

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Publication number
KR101399801B1
KR101399801B1 KR1020120142832A KR20120142832A KR101399801B1 KR 101399801 B1 KR101399801 B1 KR 101399801B1 KR 1020120142832 A KR1020120142832 A KR 1020120142832A KR 20120142832 A KR20120142832 A KR 20120142832A KR 101399801 B1 KR101399801 B1 KR 101399801B1
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substrate
active species
solution
treatment liquid
liquid
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KR20130070528A (ko
Inventor
고노스케 하야시
에미 마츠이
하루카 나카노
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시바우라 메카트로닉스 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
KR1020120142832A 2011-12-19 2012-12-10 기판 처리 방법 및 기판 처리 시스템 Active KR101399801B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011277349A JP5858770B2 (ja) 2011-12-19 2011-12-19 基板処理システム
JPJP-P-2011-277349 2011-12-19

Publications (2)

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KR20130070528A KR20130070528A (ko) 2013-06-27
KR101399801B1 true KR101399801B1 (ko) 2014-05-27

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ID=48588398

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KR1020120142832A Active KR101399801B1 (ko) 2011-12-19 2012-12-10 기판 처리 방법 및 기판 처리 시스템

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Country Link
JP (1) JP5858770B2 (https=)
KR (1) KR101399801B1 (https=)
CN (1) CN103165411B (https=)
TW (1) TWI502673B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104347385A (zh) * 2013-07-23 2015-02-11 中芯国际集成电路制造(上海)有限公司 一种半导体器件的选择性刻蚀方法及bsi图像传感器制作方法
JP6352143B2 (ja) * 2013-11-13 2018-07-04 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法
TWI630652B (zh) 2014-03-17 2018-07-21 SCREEN Holdings Co., Ltd. 基板處理裝置及使用基板處理裝置之基板處理方法
JP6324775B2 (ja) * 2014-03-17 2018-05-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理装置を用いた基板処理方法
JP6499414B2 (ja) 2014-09-30 2019-04-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6903446B2 (ja) * 2016-03-07 2021-07-14 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP6918600B2 (ja) 2016-07-29 2021-08-11 芝浦メカトロニクス株式会社 処理液生成装置及びそれを用いた基板処理装置
CN106449688A (zh) * 2016-10-28 2017-02-22 中国电子科技集团公司第四十四研究所 制作光敏区布线层的方法
JP6973534B2 (ja) * 2020-03-10 2021-12-01 栗田工業株式会社 希薄薬液供給装置
JP7471182B2 (ja) * 2020-09-11 2024-04-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN115148634B (zh) * 2022-06-29 2025-12-19 上海集成电路装备材料产业创新中心有限公司 硅片湿法处理方法及系统
US20250273471A1 (en) * 2024-02-23 2025-08-28 Tokyo Electron Limited Methods To Improve Etch Uniformity Across A Semiconductor Substrate When Etching With A Hydrofluoric Acid (HF) And Nitric Acid (HNO3) Solution

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000338684A (ja) 1999-05-26 2000-12-08 Nagase & Co Ltd 基板表面処理装置
KR20010051255A (ko) * 1999-10-26 2001-06-25 가네꼬 히사시 반도체 제조 장치
KR20080022044A (ko) * 2006-09-05 2008-03-10 다이닛뽕스크린 세이조오 가부시키가이샤 기판처리장치
KR20090023076A (ko) * 2007-08-31 2009-03-04 도쿄엘렉트론가부시키가이샤 액처리 장치, 액처리 방법 및 기억 매체

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1126425A (ja) * 1997-06-30 1999-01-29 Sumitomo Metal Ind Ltd 半導体基板のエッチング方法及びその装置
JP3653416B2 (ja) * 1999-05-19 2005-05-25 沖電気工業株式会社 エッチング方法およびエッチング装置
DE10248481B4 (de) * 2002-10-17 2006-04-27 Siltronic Ag Verfahren und Vorrichtung zur nasschemischen Behandlung von Silicium
KR100693252B1 (ko) * 2005-04-13 2007-03-13 삼성전자주식회사 기판 처리 장치, 기판 세정 장치 및 방법
JP2007251081A (ja) * 2006-03-20 2007-09-27 Dainippon Screen Mfg Co Ltd 基板処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000338684A (ja) 1999-05-26 2000-12-08 Nagase & Co Ltd 基板表面処理装置
KR20010051255A (ko) * 1999-10-26 2001-06-25 가네꼬 히사시 반도체 제조 장치
KR20080022044A (ko) * 2006-09-05 2008-03-10 다이닛뽕스크린 세이조오 가부시키가이샤 기판처리장치
KR20090023076A (ko) * 2007-08-31 2009-03-04 도쿄엘렉트론가부시키가이샤 액처리 장치, 액처리 방법 및 기억 매체

Also Published As

Publication number Publication date
JP2013128063A (ja) 2013-06-27
TW201330153A (zh) 2013-07-16
CN103165411A (zh) 2013-06-19
KR20130070528A (ko) 2013-06-27
CN103165411B (zh) 2016-08-03
TWI502673B (zh) 2015-10-01
JP5858770B2 (ja) 2016-02-10

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