JP2013128063A5 - - Google Patents
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- JP2013128063A5 JP2013128063A5 JP2011277349A JP2011277349A JP2013128063A5 JP 2013128063 A5 JP2013128063 A5 JP 2013128063A5 JP 2011277349 A JP2011277349 A JP 2011277349A JP 2011277349 A JP2011277349 A JP 2011277349A JP 2013128063 A5 JP2013128063 A5 JP 2013128063A5
- Authority
- JP
- Japan
- Prior art keywords
- processing
- substrate
- active species
- liquid
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000007788 liquid Substances 0.000 claims description 161
- 239000000758 substrate Substances 0.000 claims description 139
- 238000005530 etching Methods 0.000 claims description 77
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 31
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 claims description 23
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 18
- 238000011084 recovery Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 8
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims description 8
- 230000004913 activation Effects 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 238000003672 processing method Methods 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 description 4
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 3
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011277349A JP5858770B2 (ja) | 2011-12-19 | 2011-12-19 | 基板処理システム |
| TW101143242A TWI502673B (zh) | 2011-12-19 | 2012-11-20 | Substrate processing method and substrate processing system |
| KR1020120142832A KR101399801B1 (ko) | 2011-12-19 | 2012-12-10 | 기판 처리 방법 및 기판 처리 시스템 |
| CN201210544384.4A CN103165411B (zh) | 2011-12-19 | 2012-12-14 | 基板处理方法以及基板处理系统 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011277349A JP5858770B2 (ja) | 2011-12-19 | 2011-12-19 | 基板処理システム |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015216054A Division JP6139634B2 (ja) | 2015-11-02 | 2015-11-02 | 基板処理方法及び基板処理システム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013128063A JP2013128063A (ja) | 2013-06-27 |
| JP2013128063A5 true JP2013128063A5 (https=) | 2015-07-09 |
| JP5858770B2 JP5858770B2 (ja) | 2016-02-10 |
Family
ID=48588398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011277349A Active JP5858770B2 (ja) | 2011-12-19 | 2011-12-19 | 基板処理システム |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5858770B2 (https=) |
| KR (1) | KR101399801B1 (https=) |
| CN (1) | CN103165411B (https=) |
| TW (1) | TWI502673B (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104347385A (zh) * | 2013-07-23 | 2015-02-11 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的选择性刻蚀方法及bsi图像传感器制作方法 |
| JP6352143B2 (ja) * | 2013-11-13 | 2018-07-04 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法 |
| TWI630652B (zh) | 2014-03-17 | 2018-07-21 | SCREEN Holdings Co., Ltd. | 基板處理裝置及使用基板處理裝置之基板處理方法 |
| JP6324775B2 (ja) * | 2014-03-17 | 2018-05-16 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理装置を用いた基板処理方法 |
| JP6499414B2 (ja) | 2014-09-30 | 2019-04-10 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| JP6903446B2 (ja) * | 2016-03-07 | 2021-07-14 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
| JP6918600B2 (ja) | 2016-07-29 | 2021-08-11 | 芝浦メカトロニクス株式会社 | 処理液生成装置及びそれを用いた基板処理装置 |
| CN106449688A (zh) * | 2016-10-28 | 2017-02-22 | 中国电子科技集团公司第四十四研究所 | 制作光敏区布线层的方法 |
| JP6973534B2 (ja) * | 2020-03-10 | 2021-12-01 | 栗田工業株式会社 | 希薄薬液供給装置 |
| JP7471182B2 (ja) * | 2020-09-11 | 2024-04-19 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
| CN115148634B (zh) * | 2022-06-29 | 2025-12-19 | 上海集成电路装备材料产业创新中心有限公司 | 硅片湿法处理方法及系统 |
| US20250273471A1 (en) * | 2024-02-23 | 2025-08-28 | Tokyo Electron Limited | Methods To Improve Etch Uniformity Across A Semiconductor Substrate When Etching With A Hydrofluoric Acid (HF) And Nitric Acid (HNO3) Solution |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1126425A (ja) * | 1997-06-30 | 1999-01-29 | Sumitomo Metal Ind Ltd | 半導体基板のエッチング方法及びその装置 |
| JP3653416B2 (ja) * | 1999-05-19 | 2005-05-25 | 沖電気工業株式会社 | エッチング方法およびエッチング装置 |
| JP2000338684A (ja) | 1999-05-26 | 2000-12-08 | Nagase & Co Ltd | 基板表面処理装置 |
| TW543080B (en) * | 1999-10-26 | 2003-07-21 | Fab Solutions Inc | Semiconductor device |
| DE10248481B4 (de) * | 2002-10-17 | 2006-04-27 | Siltronic Ag | Verfahren und Vorrichtung zur nasschemischen Behandlung von Silicium |
| KR100693252B1 (ko) * | 2005-04-13 | 2007-03-13 | 삼성전자주식회사 | 기판 처리 장치, 기판 세정 장치 및 방법 |
| JP2007251081A (ja) * | 2006-03-20 | 2007-09-27 | Dainippon Screen Mfg Co Ltd | 基板処理方法 |
| JP2008066351A (ja) * | 2006-09-05 | 2008-03-21 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| JP4901650B2 (ja) * | 2007-08-31 | 2012-03-21 | 東京エレクトロン株式会社 | 液処理装置、液処理方法および記憶媒体 |
-
2011
- 2011-12-19 JP JP2011277349A patent/JP5858770B2/ja active Active
-
2012
- 2012-11-20 TW TW101143242A patent/TWI502673B/zh active
- 2012-12-10 KR KR1020120142832A patent/KR101399801B1/ko active Active
- 2012-12-14 CN CN201210544384.4A patent/CN103165411B/zh active Active
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