CN103165411B - 基板处理方法以及基板处理系统 - Google Patents

基板处理方法以及基板处理系统 Download PDF

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Publication number
CN103165411B
CN103165411B CN201210544384.4A CN201210544384A CN103165411B CN 103165411 B CN103165411 B CN 103165411B CN 201210544384 A CN201210544384 A CN 201210544384A CN 103165411 B CN103165411 B CN 103165411B
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China
Prior art keywords
liquid
active species
processing
substrate
etching
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CN201210544384.4A
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English (en)
Chinese (zh)
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CN103165411A (zh
Inventor
林航之介
松井绘美
中野晴香
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Shibaura Mechatronics Corp
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Shibaura Engineering Works Co Ltd
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Publication of CN103165411A publication Critical patent/CN103165411A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
CN201210544384.4A 2011-12-19 2012-12-14 基板处理方法以及基板处理系统 Active CN103165411B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011277349A JP5858770B2 (ja) 2011-12-19 2011-12-19 基板処理システム
JP2011-277349 2011-12-19

Publications (2)

Publication Number Publication Date
CN103165411A CN103165411A (zh) 2013-06-19
CN103165411B true CN103165411B (zh) 2016-08-03

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ID=48588398

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CN201210544384.4A Active CN103165411B (zh) 2011-12-19 2012-12-14 基板处理方法以及基板处理系统

Country Status (4)

Country Link
JP (1) JP5858770B2 (https=)
KR (1) KR101399801B1 (https=)
CN (1) CN103165411B (https=)
TW (1) TWI502673B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104347385A (zh) * 2013-07-23 2015-02-11 中芯国际集成电路制造(上海)有限公司 一种半导体器件的选择性刻蚀方法及bsi图像传感器制作方法
JP6352143B2 (ja) * 2013-11-13 2018-07-04 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法
TWI630652B (zh) 2014-03-17 2018-07-21 SCREEN Holdings Co., Ltd. 基板處理裝置及使用基板處理裝置之基板處理方法
JP6324775B2 (ja) * 2014-03-17 2018-05-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理装置を用いた基板処理方法
JP6499414B2 (ja) 2014-09-30 2019-04-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6903446B2 (ja) * 2016-03-07 2021-07-14 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP6918600B2 (ja) 2016-07-29 2021-08-11 芝浦メカトロニクス株式会社 処理液生成装置及びそれを用いた基板処理装置
CN106449688A (zh) * 2016-10-28 2017-02-22 中国电子科技集团公司第四十四研究所 制作光敏区布线层的方法
JP6973534B2 (ja) * 2020-03-10 2021-12-01 栗田工業株式会社 希薄薬液供給装置
JP7471182B2 (ja) * 2020-09-11 2024-04-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN115148634B (zh) * 2022-06-29 2025-12-19 上海集成电路装备材料产业创新中心有限公司 硅片湿法处理方法及系统
US20250273471A1 (en) * 2024-02-23 2025-08-28 Tokyo Electron Limited Methods To Improve Etch Uniformity Across A Semiconductor Substrate When Etching With A Hydrofluoric Acid (HF) And Nitric Acid (HNO3) Solution

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000338684A (ja) * 1999-05-26 2000-12-08 Nagase & Co Ltd 基板表面処理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1126425A (ja) * 1997-06-30 1999-01-29 Sumitomo Metal Ind Ltd 半導体基板のエッチング方法及びその装置
JP3653416B2 (ja) * 1999-05-19 2005-05-25 沖電気工業株式会社 エッチング方法およびエッチング装置
TW543080B (en) * 1999-10-26 2003-07-21 Fab Solutions Inc Semiconductor device
DE10248481B4 (de) * 2002-10-17 2006-04-27 Siltronic Ag Verfahren und Vorrichtung zur nasschemischen Behandlung von Silicium
KR100693252B1 (ko) * 2005-04-13 2007-03-13 삼성전자주식회사 기판 처리 장치, 기판 세정 장치 및 방법
JP2007251081A (ja) * 2006-03-20 2007-09-27 Dainippon Screen Mfg Co Ltd 基板処理方法
JP2008066351A (ja) * 2006-09-05 2008-03-21 Dainippon Screen Mfg Co Ltd 基板処理装置
JP4901650B2 (ja) * 2007-08-31 2012-03-21 東京エレクトロン株式会社 液処理装置、液処理方法および記憶媒体

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000338684A (ja) * 1999-05-26 2000-12-08 Nagase & Co Ltd 基板表面処理装置

Also Published As

Publication number Publication date
JP2013128063A (ja) 2013-06-27
TW201330153A (zh) 2013-07-16
CN103165411A (zh) 2013-06-19
KR20130070528A (ko) 2013-06-27
TWI502673B (zh) 2015-10-01
JP5858770B2 (ja) 2016-02-10
KR101399801B1 (ko) 2014-05-27

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