KR101385066B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101385066B1
KR101385066B1 KR1020070137351A KR20070137351A KR101385066B1 KR 101385066 B1 KR101385066 B1 KR 101385066B1 KR 1020070137351 A KR1020070137351 A KR 1020070137351A KR 20070137351 A KR20070137351 A KR 20070137351A KR 101385066 B1 KR101385066 B1 KR 101385066B1
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KR
South Korea
Prior art keywords
electrode
capacitor
film
conductive film
rectifying
Prior art date
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Expired - Fee Related
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KR1020070137351A
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English (en)
Korean (ko)
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KR20080063116A (ko
Inventor
치카코 마츠모토
키요시 카토
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20080063116A publication Critical patent/KR20080063116A/ko
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Dc-Dc Converters (AREA)
KR1020070137351A 2006-12-28 2007-12-26 반도체 장치 Expired - Fee Related KR101385066B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00354427 2006-12-28
JP2006354427 2006-12-28

Publications (2)

Publication Number Publication Date
KR20080063116A KR20080063116A (ko) 2008-07-03
KR101385066B1 true KR101385066B1 (ko) 2014-04-14

Family

ID=39725842

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070137351A Expired - Fee Related KR101385066B1 (ko) 2006-12-28 2007-12-26 반도체 장치

Country Status (3)

Country Link
US (2) US8013665B2 (enExample)
JP (2) JP5179849B2 (enExample)
KR (1) KR101385066B1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5361176B2 (ja) * 2006-12-13 2013-12-04 株式会社半導体エネルギー研究所 半導体装置
JP5484109B2 (ja) * 2009-02-09 2014-05-07 三菱電機株式会社 電気光学装置
JP5537307B2 (ja) * 2010-07-14 2014-07-02 ルネサスエレクトロニクス株式会社 チャージポンプ回路、不揮発性メモリ、データ処理装置、及びマイクロコンピュータ応用システム
US8476964B1 (en) * 2012-05-17 2013-07-02 Emerson Electric Co. Obtaining elevated output voltages from charge pump circuits
JP6978669B2 (ja) * 2017-11-28 2021-12-08 富士通株式会社 化合物半導体装置及びその製造方法、並びに受信装置及び発電装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06283667A (ja) * 1993-03-26 1994-10-07 Toshiba Corp 高電圧発生回路
JPH07154964A (ja) * 1993-08-11 1995-06-16 Advanced Micro Devices Inc 低電圧チャージポンプ
JPH09275189A (ja) * 1996-04-04 1997-10-21 Sony Corp 半導体装置及びその製造方法
JP2003297936A (ja) 2002-04-02 2003-10-17 Rohm Co Ltd 昇圧回路を備えた半導体装置

Family Cites Families (30)

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Publication number Priority date Publication date Assignee Title
US4591738A (en) * 1983-10-27 1986-05-27 International Business Machines Corporation Charge pumping circuit
JPH0473960A (ja) * 1990-07-16 1992-03-09 Nec Ic Microcomput Syst Ltd 半導体集積回路
JPH0595082A (ja) * 1991-10-01 1993-04-16 Matsushita Electron Corp 半導体装置
US5303395A (en) * 1991-11-06 1994-04-12 Mitsubishi Consumer Electronics America, Inc. Power control with a constant gain amplifier for portable radio transceivers
JPH06334119A (ja) 1993-02-17 1994-12-02 Seiko Instr Inc 昇圧用半導体集積回路及びその半導体集積回路を用いた電子機器
JPH09266281A (ja) * 1996-03-28 1997-10-07 Sony Corp 昇圧回路
JP3394133B2 (ja) 1996-06-12 2003-04-07 沖電気工業株式会社 昇圧回路
US5999425A (en) * 1998-01-15 1999-12-07 Cypress Semiconductor Corp. Charge pump architecture for integrated circuit
US6522582B1 (en) * 1999-03-05 2003-02-18 Xilinx, Inc. Non-volatile memory array using gate breakdown structures
JP3614747B2 (ja) 2000-03-07 2005-01-26 Ｎｅｃエレクトロニクス株式会社 昇圧回路、それを搭載したｉｃカード及びそれを搭載した電子機器
JP2002064148A (ja) * 2000-08-17 2002-02-28 Hitachi Ltd 半導体集積回路装置
JP2002217304A (ja) * 2000-11-17 2002-08-02 Rohm Co Ltd 半導体装置
JP4730638B2 (ja) * 2001-08-09 2011-07-20 株式会社デンソー 半導体装置
US6888399B2 (en) * 2002-02-08 2005-05-03 Rohm Co., Ltd. Semiconductor device equipped with a voltage step-up circuit
JP4110792B2 (ja) * 2002-02-20 2008-07-02 日本電気株式会社 容量素子及び容量素子を用いた半導体集積回路
WO2003107314A2 (en) * 2002-06-01 2003-12-24 Samsung Electronics Co., Ltd. Method of driving a shift register, a shift register, a liquid crystal display device having the shift register
JP2004146082A (ja) * 2002-10-21 2004-05-20 Semiconductor Energy Lab Co Ltd 表示装置
WO2004100110A1 (ja) * 2003-05-12 2004-11-18 International Business Machines Corporation アクティブマトリックスパネルの検査装置、検査方法、およびアクティブマトリックスｏｌｅｄパネルの製造方法
US7494066B2 (en) 2003-12-19 2009-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4565847B2 (ja) * 2004-01-14 2010-10-20 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7256642B2 (en) 2004-03-19 2007-08-14 Semiconductor Energy Laboratory Co., Ltd. Booster circuit, semiconductor device, and electronic apparatus
JP3972916B2 (ja) 2004-04-08 2007-09-05 セイコーエプソン株式会社 昇圧回路及び半導体集積回路
JP4549889B2 (ja) * 2004-05-24 2010-09-22 三星モバイルディスプレイ株式會社 キャパシタ及びこれを利用する発光表示装置
WO2006028258A1 (en) 2004-09-09 2006-03-16 Semiconductor Energy Laboratory Co., Ltd. Wireless chip
KR100636508B1 (ko) * 2004-11-11 2006-10-18 삼성에스디아이 주식회사 차지펌프 회로와 이를 이용한 직류 변환장치
WO2007007768A1 (ja) * 2005-07-14 2007-01-18 Sharp Kabushiki Kaisha アクティブマトリクス型液晶表示装置およびその駆動方法
JP4912121B2 (ja) * 2006-02-23 2012-04-11 三菱電機株式会社 シフトレジスタ回路
JP5324161B2 (ja) * 2007-08-30 2013-10-23 株式会社半導体エネルギー研究所 半導体装置
JP5665299B2 (ja) * 2008-10-31 2015-02-04 三菱電機株式会社 シフトレジスタ回路
JP5188382B2 (ja) * 2008-12-25 2013-04-24 三菱電機株式会社 シフトレジスタ回路

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06283667A (ja) * 1993-03-26 1994-10-07 Toshiba Corp 高電圧発生回路
JPH07154964A (ja) * 1993-08-11 1995-06-16 Advanced Micro Devices Inc 低電圧チャージポンプ
JPH09275189A (ja) * 1996-04-04 1997-10-21 Sony Corp 半導体装置及びその製造方法
JP2003297936A (ja) 2002-04-02 2003-10-17 Rohm Co Ltd 昇圧回路を備えた半導体装置

Also Published As

Publication number Publication date
US8274323B2 (en) 2012-09-25
US8013665B2 (en) 2011-09-06
US20120081935A1 (en) 2012-04-05
JP2013110428A (ja) 2013-06-06
KR20080063116A (ko) 2008-07-03
US20080273357A1 (en) 2008-11-06
JP5492313B2 (ja) 2014-05-14
JP2008182206A (ja) 2008-08-07
JP5179849B2 (ja) 2013-04-10

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