KR101384590B1 - 반도체 디바이스 제조 방법 및 반도체 디바이스 제조 장치 - Google Patents

반도체 디바이스 제조 방법 및 반도체 디바이스 제조 장치 Download PDF

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Publication number
KR101384590B1
KR101384590B1 KR1020147001310A KR20147001310A KR101384590B1 KR 101384590 B1 KR101384590 B1 KR 101384590B1 KR 1020147001310 A KR1020147001310 A KR 1020147001310A KR 20147001310 A KR20147001310 A KR 20147001310A KR 101384590 B1 KR101384590 B1 KR 101384590B1
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KR
South Korea
Prior art keywords
substrate
plasma
oxygen plasma
insulating film
semiconductor device
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KR1020147001310A
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English (en)
Korean (ko)
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KR20140016433A (ko
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마사루 사사키
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Plasma Technology (AREA)
KR1020147001310A 2009-10-04 2010-10-02 반도체 디바이스 제조 방법 및 반도체 디바이스 제조 장치 Active KR101384590B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/573,138 2009-10-04
US12/573,138 US8497196B2 (en) 2009-10-04 2009-10-04 Semiconductor device, method for fabricating the same and apparatus for fabricating the same
PCT/JP2010/005926 WO2011040047A1 (en) 2009-10-04 2010-10-02 Semiconductor device, method for fabricating the same and apparatus for fabricating the same

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020127008779A Division KR20120049399A (ko) 2009-10-04 2010-10-02 반도체 디바이스, 반도체 디바이스 제조 방법 및 반도체 디바이스 제조 장치

Publications (2)

Publication Number Publication Date
KR20140016433A KR20140016433A (ko) 2014-02-07
KR101384590B1 true KR101384590B1 (ko) 2014-04-11

Family

ID=43822528

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Application Number Title Priority Date Filing Date
KR1020147001310A Active KR101384590B1 (ko) 2009-10-04 2010-10-02 반도체 디바이스 제조 방법 및 반도체 디바이스 제조 장치
KR1020127008779A Ceased KR20120049399A (ko) 2009-10-04 2010-10-02 반도체 디바이스, 반도체 디바이스 제조 방법 및 반도체 디바이스 제조 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020127008779A Ceased KR20120049399A (ko) 2009-10-04 2010-10-02 반도체 디바이스, 반도체 디바이스 제조 방법 및 반도체 디바이스 제조 장치

Country Status (6)

Country Link
US (1) US8497196B2 (enExample)
JP (1) JP5442871B2 (enExample)
KR (2) KR101384590B1 (enExample)
CN (1) CN102549756B (enExample)
TW (1) TWI423336B (enExample)
WO (1) WO2011040047A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016104206A1 (ja) * 2014-12-24 2016-06-30 東京エレクトロン株式会社 ドーピング方法、ドーピング装置および半導体素子の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100353590B1 (ko) 1996-08-07 2002-12-26 마츠시타 덴끼 산교 가부시키가이샤 드라이에칭후처리방법과반도체장치의제조방법
JP2009059850A (ja) 2007-08-31 2009-03-19 Tohoku Univ 半導体装置の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142447A (ja) * 1993-11-16 1995-06-02 Kawasaki Steel Corp 半導体装置の製造方法
JP3402937B2 (ja) 1996-06-28 2003-05-06 三洋電機株式会社 半導体装置の製造方法
JP3217280B2 (ja) 1996-10-30 2001-10-09 松下電器産業株式会社 ドライエッチング後処理方法とｍｏｓ型半導体装置の製造方法
JP4048618B2 (ja) * 1998-10-07 2008-02-20 ソニー株式会社 半導体装置の製造方法
US7223676B2 (en) * 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
CN100347832C (zh) 2001-01-25 2007-11-07 东京毅力科创株式会社 电子器件材料的制造方法
US6534420B2 (en) * 2001-07-18 2003-03-18 Micron Technology, Inc. Methods for forming dielectric materials and methods for forming semiconductor devices
TW200402796A (en) * 2002-03-29 2004-02-16 Tokyo Electron Ltd Forming method of substrate insulation film
TWI225668B (en) * 2002-05-13 2004-12-21 Tokyo Electron Ltd Substrate processing method
JP2005051140A (ja) * 2003-07-31 2005-02-24 Toshiba Corp 半導体装置およびその製造方法
US6982196B2 (en) * 2003-11-04 2006-01-03 International Business Machines Corporation Oxidation method for altering a film structure and CMOS transistor structure formed therewith
JP2006165335A (ja) * 2004-12-08 2006-06-22 Toshiba Corp 半導体装置
JP5084169B2 (ja) * 2005-04-28 2012-11-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI408734B (zh) * 2005-04-28 2013-09-11 Semiconductor Energy Lab 半導體裝置及其製造方法
JP2008098640A (ja) * 2007-10-09 2008-04-24 Toshiba Corp 半導体装置の製造方法
KR101250057B1 (ko) * 2008-02-08 2013-04-03 도쿄엘렉트론가부시키가이샤 절연막의 플라즈마 개질 처리 방법 및 플라즈마 처리 장치

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100353590B1 (ko) 1996-08-07 2002-12-26 마츠시타 덴끼 산교 가부시키가이샤 드라이에칭후처리방법과반도체장치의제조방법
JP2009059850A (ja) 2007-08-31 2009-03-19 Tohoku Univ 半導体装置の製造方法

Also Published As

Publication number Publication date
US8497196B2 (en) 2013-07-30
WO2011040047A1 (en) 2011-04-07
TW201131654A (en) 2011-09-16
CN102549756B (zh) 2015-03-04
JP5442871B2 (ja) 2014-03-12
KR20140016433A (ko) 2014-02-07
TWI423336B (zh) 2014-01-11
US20110079826A1 (en) 2011-04-07
CN102549756A (zh) 2012-07-04
KR20120049399A (ko) 2012-05-16
JP2013506986A (ja) 2013-02-28

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