TWI423336B - 半導體元件及其製造方法，以及製造半導體元件之裝置 - Google Patents
半導體元件及其製造方法，以及製造半導體元件之裝置 Download PDFInfo
- Publication number
- TWI423336B TWI423336B TW099133451A TW99133451A TWI423336B TW I423336 B TWI423336 B TW I423336B TW 099133451 A TW099133451 A TW 099133451A TW 99133451 A TW99133451 A TW 99133451A TW I423336 B TWI423336 B TW I423336B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- semiconductor device
- manufacturing
- plasma
- oxygen plasma
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 claims description 83
- 239000007789 gas Substances 0.000 claims description 72
- 238000000034 method Methods 0.000 claims description 55
- 230000008569 process Effects 0.000 claims description 51
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 34
- 239000001301 oxygen Substances 0.000 claims description 34
- 229910052760 oxygen Inorganic materials 0.000 claims description 34
- 229910052732 germanium Inorganic materials 0.000 claims description 27
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 27
- 125000006850 spacer group Chemical group 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 24
- 238000001020 plasma etching Methods 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- 238000005530 etching Methods 0.000 description 33
- 230000003647 oxidation Effects 0.000 description 21
- 238000007254 oxidation reaction Methods 0.000 description 21
- 238000012545 processing Methods 0.000 description 19
- 239000004020 conductor Substances 0.000 description 14
- 239000002826 coolant Substances 0.000 description 14
- 239000010453 quartz Substances 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 238000012546 transfer Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000013049 sediment Substances 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- -1 for example Chemical compound 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
- H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/573,138 US8497196B2 (en) | 2009-10-04 | 2009-10-04 | Semiconductor device, method for fabricating the same and apparatus for fabricating the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201131654A TW201131654A (en) | 2011-09-16 |
| TWI423336B true TWI423336B (zh) | 2014-01-11 |
Family
ID=43822528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099133451A TWI423336B (zh) | 2009-10-04 | 2010-10-01 | 半導體元件及其製造方法，以及製造半導體元件之裝置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8497196B2 (enExample) |
| JP (1) | JP5442871B2 (enExample) |
| KR (2) | KR20120049399A (enExample) |
| CN (1) | CN102549756B (enExample) |
| TW (1) | TWI423336B (enExample) |
| WO (1) | WO2011040047A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2016104206A1 (ja) * | 2014-12-24 | 2017-10-05 | 東京エレクトロン株式会社 | ドーピング方法、ドーピング装置および半導体素子の製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10135189A (ja) * | 1996-10-30 | 1998-05-22 | Matsushita Electron Corp | ドライエッチング後処理方法とｍｏｓ型半導体装置の製造方法 |
| EP1361606A1 (en) * | 2001-01-25 | 2003-11-12 | Tokyo Electron Limited | Method of producing electronic device material |
| US20060246738A1 (en) * | 2005-04-28 | 2006-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2009099252A1 (ja) * | 2008-02-08 | 2009-08-13 | Tokyo Electron Limited | 絶縁膜のプラズマ改質処理方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07142447A (ja) * | 1993-11-16 | 1995-06-02 | Kawasaki Steel Corp | 半導体装置の製造方法 |
| JP3402937B2 (ja) | 1996-06-28 | 2003-05-06 | 三洋電機株式会社 | 半導体装置の製造方法 |
| TW376551B (en) | 1996-08-07 | 1999-12-11 | Matsushita Electric Industrial Co Ltd | Aftertreatment method of dry etching and process of manufacturing semiconductor device |
| JP4048618B2 (ja) * | 1998-10-07 | 2008-02-20 | ソニー株式会社 | 半導体装置の製造方法 |
| US7223676B2 (en) * | 2002-06-05 | 2007-05-29 | Applied Materials, Inc. | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer |
| US6534420B2 (en) * | 2001-07-18 | 2003-03-18 | Micron Technology, Inc. | Methods for forming dielectric materials and methods for forming semiconductor devices |
| EP1492161A4 (en) * | 2002-03-29 | 2006-05-24 | Tokyo Electron Ltd | METHOD FOR CONSTITUTING AN UNDERLYING INSULATING FILM |
| TWI225668B (en) * | 2002-05-13 | 2004-12-21 | Tokyo Electron Ltd | Substrate processing method |
| JP2005051140A (ja) * | 2003-07-31 | 2005-02-24 | Toshiba Corp | 半導体装置およびその製造方法 |
| US6982196B2 (en) * | 2003-11-04 | 2006-01-03 | International Business Machines Corporation | Oxidation method for altering a film structure and CMOS transistor structure formed therewith |
| JP2006165335A (ja) * | 2004-12-08 | 2006-06-22 | Toshiba Corp | 半導体装置 |
| JP5084169B2 (ja) * | 2005-04-28 | 2012-11-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5422854B2 (ja) | 2007-08-31 | 2014-02-19 | 国立大学法人東北大学 | 半導体装置の製造方法 |
| JP2008098640A (ja) * | 2007-10-09 | 2008-04-24 | Toshiba Corp | 半導体装置の製造方法 |
-
2009
- 2009-10-04 US US12/573,138 patent/US8497196B2/en active Active
-
2010
- 2010-10-01 TW TW099133451A patent/TWI423336B/zh active
- 2010-10-02 KR KR1020127008779A patent/KR20120049399A/ko not_active Ceased
- 2010-10-02 JP JP2012531562A patent/JP5442871B2/ja active Active
- 2010-10-02 KR KR1020147001310A patent/KR101384590B1/ko active Active
- 2010-10-02 CN CN201080044368.8A patent/CN102549756B/zh active Active
- 2010-10-02 WO PCT/JP2010/005926 patent/WO2011040047A1/en not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10135189A (ja) * | 1996-10-30 | 1998-05-22 | Matsushita Electron Corp | ドライエッチング後処理方法とｍｏｓ型半導体装置の製造方法 |
| EP1361606A1 (en) * | 2001-01-25 | 2003-11-12 | Tokyo Electron Limited | Method of producing electronic device material |
| US20060246738A1 (en) * | 2005-04-28 | 2006-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2009099252A1 (ja) * | 2008-02-08 | 2009-08-13 | Tokyo Electron Limited | 絶縁膜のプラズマ改質処理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102549756B (zh) | 2015-03-04 |
| KR20120049399A (ko) | 2012-05-16 |
| US8497196B2 (en) | 2013-07-30 |
| TW201131654A (en) | 2011-09-16 |
| CN102549756A (zh) | 2012-07-04 |
| US20110079826A1 (en) | 2011-04-07 |
| JP2013506986A (ja) | 2013-02-28 |
| JP5442871B2 (ja) | 2014-03-12 |
| KR101384590B1 (ko) | 2014-04-11 |
| KR20140016433A (ko) | 2014-02-07 |
| WO2011040047A1 (en) | 2011-04-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5086083B2 (ja) | 基板を処理するための方法 | |
| JP5122966B2 (ja) | 表面波プラズマソース | |
| TWI605503B (zh) | 利用主要蝕刻及循環蝕刻製程之組合在材料層中形成特徵之方法 | |
| JP4861329B2 (ja) | 基板を処理するためのプラズマ処理システム | |
| JP3946130B2 (ja) | プラズマ処理装置およびプラズマ処理方法 | |
| TWI654683B (zh) | 蝕刻雙鑲嵌結構中的介電阻隔層之方法 | |
| US5897713A (en) | Plasma generating apparatus | |
| US6870123B2 (en) | Microwave applicator, plasma processing apparatus having same, and plasma processing method | |
| US20170356084A1 (en) | Processing method of silicon nitride film and forming method of silicon nitride film | |
| KR20160102356A (ko) | 10ｎｍ 이하의 패터닝을 달성하기 위한 물질 처리 | |
| CN101189708A (zh) | 等离子体处理装置和等离子体处理方法 | |
| US10410873B2 (en) | Power modulation for etching high aspect ratio features | |
| US20140302684A1 (en) | Etching method and apparatus | |
| US20100093185A1 (en) | Method for forming silicon oxide film, plasma processing apparatus and storage medium | |
| WO2020106386A1 (en) | A cluster processing system for forming a transition metal material | |
| TW201303999A (zh) | 電漿處理方法及元件分離方法 | |
| US7910495B2 (en) | Plasma oxidizing method, plasma processing apparatus, and storage medium | |
| JP5242162B2 (ja) | 表面波プラズマソース | |
| TWI423336B (zh) | 半導體元件及其製造方法，以及製造半導體元件之裝置 | |
| JP2023048519A (ja) | プラズマ処理方法及びプラズマ処理装置 | |
| JP4478352B2 (ja) | プラズマ処理装置及びプラズマ処理方法並びに構造体の製造方法 | |
| US10504741B2 (en) | Semiconductor manufacturing method and plasma processing apparatus | |
| TWI787239B (zh) | 有機材料的蝕刻方法及設備 | |
| TW201944514A (zh) | 處理系統及處理方法 |