CN102549756B - 半导体器件、其制造方法及其制造装置 - Google Patents

半导体器件、其制造方法及其制造装置 Download PDF

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Publication number
CN102549756B
CN102549756B CN201080044368.8A CN201080044368A CN102549756B CN 102549756 B CN102549756 B CN 102549756B CN 201080044368 A CN201080044368 A CN 201080044368A CN 102549756 B CN102549756 B CN 102549756B
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CN
China
Prior art keywords
substrate
oxygen plasma
semiconductor device
plasma
sept
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CN201080044368.8A
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Chinese (zh)
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CN102549756A (zh
Inventor
佐佐木胜
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Plasma Technology (AREA)
CN201080044368.8A 2009-10-04 2010-10-02 半导体器件、其制造方法及其制造装置 Active CN102549756B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/573,138 US8497196B2 (en) 2009-10-04 2009-10-04 Semiconductor device, method for fabricating the same and apparatus for fabricating the same
US12/573,138 2009-10-04
PCT/JP2010/005926 WO2011040047A1 (en) 2009-10-04 2010-10-02 Semiconductor device, method for fabricating the same and apparatus for fabricating the same

Publications (2)

Publication Number Publication Date
CN102549756A CN102549756A (zh) 2012-07-04
CN102549756B true CN102549756B (zh) 2015-03-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080044368.8A Active CN102549756B (zh) 2009-10-04 2010-10-02 半导体器件、其制造方法及其制造装置

Country Status (6)

Country Link
US (1) US8497196B2 (enExample)
JP (1) JP5442871B2 (enExample)
KR (2) KR101384590B1 (enExample)
CN (1) CN102549756B (enExample)
TW (1) TWI423336B (enExample)
WO (1) WO2011040047A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180012763A1 (en) * 2014-12-24 2018-01-11 Tokyo Electron Limited Doping method, doping apparatus, and semiconductor element manufacturing method

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030017717A1 (en) * 2001-07-18 2003-01-23 Ahn Kie Y. Methods for forming dielectric materials and methods for forming semiconductor devices
CN1489784A (zh) * 2001-01-25 2004-04-14 ���������ƴ���ʽ���� 电子器件材料的制造方法
US20050023567A1 (en) * 2003-07-31 2005-02-03 Kazumi Nishinohara Semiconductor device and method for manufacturing the same
CN1620720A (zh) * 2002-03-29 2005-05-25 东京毅力科创株式会社 基底绝缘膜的形成方法
CN1624870A (zh) * 2003-11-04 2005-06-08 国际商业机器公司 改变膜结构的氧化方法和以之形成的cmos晶体管结构
CN1659692A (zh) * 2002-05-13 2005-08-24 东京毅力科创株式会社 基板处理方法
CN1787230A (zh) * 2004-12-08 2006-06-14 株式会社东芝 包括场效应晶体管的半导体装置
CN1870233A (zh) * 2005-04-28 2006-11-29 株式会社半导体能源研究所 半导体器件及其制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142447A (ja) * 1993-11-16 1995-06-02 Kawasaki Steel Corp 半導体装置の製造方法
JP3402937B2 (ja) 1996-06-28 2003-05-06 三洋電機株式会社 半導体装置の製造方法
JP3217280B2 (ja) 1996-10-30 2001-10-09 松下電器産業株式会社 ドライエッチング後処理方法とｍｏｓ型半導体装置の製造方法
US5902134A (en) 1996-08-07 1999-05-11 Matsushita Electronics Corporation Dry etching post-treatment method and method for manufacturing a semiconductor device
JP4048618B2 (ja) * 1998-10-07 2008-02-20 ソニー株式会社 半導体装置の製造方法
US7223676B2 (en) * 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
JP5084169B2 (ja) * 2005-04-28 2012-11-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5422854B2 (ja) * 2007-08-31 2014-02-19 国立大学法人東北大学 半導体装置の製造方法
JP2008098640A (ja) * 2007-10-09 2008-04-24 Toshiba Corp 半導体装置の製造方法
TW201001543A (en) 2008-02-08 2010-01-01 Tokyo Electron Ltd Method for modifying insulating film with plasma

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1489784A (zh) * 2001-01-25 2004-04-14 ���������ƴ���ʽ���� 电子器件材料的制造方法
US20030017717A1 (en) * 2001-07-18 2003-01-23 Ahn Kie Y. Methods for forming dielectric materials and methods for forming semiconductor devices
CN1620720A (zh) * 2002-03-29 2005-05-25 东京毅力科创株式会社 基底绝缘膜的形成方法
CN1659692A (zh) * 2002-05-13 2005-08-24 东京毅力科创株式会社 基板处理方法
US20050023567A1 (en) * 2003-07-31 2005-02-03 Kazumi Nishinohara Semiconductor device and method for manufacturing the same
CN1624870A (zh) * 2003-11-04 2005-06-08 国际商业机器公司 改变膜结构的氧化方法和以之形成的cmos晶体管结构
CN1787230A (zh) * 2004-12-08 2006-06-14 株式会社东芝 包括场效应晶体管的半导体装置
CN1870233A (zh) * 2005-04-28 2006-11-29 株式会社半导体能源研究所 半导体器件及其制造方法

Also Published As

Publication number Publication date
KR101384590B1 (ko) 2014-04-11
CN102549756A (zh) 2012-07-04
TWI423336B (zh) 2014-01-11
KR20140016433A (ko) 2014-02-07
US8497196B2 (en) 2013-07-30
JP2013506986A (ja) 2013-02-28
KR20120049399A (ko) 2012-05-16
WO2011040047A1 (en) 2011-04-07
TW201131654A (en) 2011-09-16
US20110079826A1 (en) 2011-04-07
JP5442871B2 (ja) 2014-03-12

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