KR101373789B1 - 코딩 및 신호 처리 기능을 갖는 플래시 메모리 - Google Patents

코딩 및 신호 처리 기능을 갖는 플래시 메모리 Download PDF

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KR101373789B1
KR101373789B1 KR1020087020393A KR20087020393A KR101373789B1 KR 101373789 B1 KR101373789 B1 KR 101373789B1 KR 1020087020393 A KR1020087020393 A KR 1020087020393A KR 20087020393 A KR20087020393 A KR 20087020393A KR 101373789 B1 KR101373789 B1 KR 101373789B1
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data
code
encoder
encoding
solid state
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KR20080098041A (ko
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지닝 유
판타스 수타르드자
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마벨 월드 트레이드 리미티드
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1072—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in multilevel memories
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0411—Online error correction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/16—Storage of analogue signals in digital stores using an arrangement comprising analogue/digital [A/D] converters, digital memories and digital/analogue [D/A] converters 

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Error Detection And Correction (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
KR1020087020393A 2006-01-20 2007-01-19 코딩 및 신호 처리 기능을 갖는 플래시 메모리 Active KR101373789B1 (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US76062206P 2006-01-20 2006-01-20
US60/760,622 2006-01-20
US76188806P 2006-01-25 2006-01-25
US60/761,888 2006-01-25
US77162106P 2006-02-08 2006-02-08
US60/771,621 2006-02-08
US11/598,178 US8055979B2 (en) 2006-01-20 2006-11-08 Flash memory with coding and signal processing
US11/598,178 2006-11-08
PCT/US2007/001623 WO2007084751A2 (en) 2006-01-20 2007-01-19 Flash memory with coding and signal processing

Publications (2)

Publication Number Publication Date
KR20080098041A KR20080098041A (ko) 2008-11-06
KR101373789B1 true KR101373789B1 (ko) 2014-03-13

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KR1020087020393A Active KR101373789B1 (ko) 2006-01-20 2007-01-19 코딩 및 신호 처리 기능을 갖는 플래시 메모리

Country Status (6)

Country Link
US (1) US8055979B2 (enExample)
EP (1) EP1984923B1 (enExample)
JP (1) JP5232014B2 (enExample)
KR (1) KR101373789B1 (enExample)
TW (1) TWI352284B (enExample)
WO (1) WO2007084751A2 (enExample)

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