KR101358090B1 - 기판 처리 장치 - Google Patents

기판 처리 장치 Download PDF

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Publication number
KR101358090B1
KR101358090B1 KR1020110017756A KR20110017756A KR101358090B1 KR 101358090 B1 KR101358090 B1 KR 101358090B1 KR 1020110017756 A KR1020110017756 A KR 1020110017756A KR 20110017756 A KR20110017756 A KR 20110017756A KR 101358090 B1 KR101358090 B1 KR 101358090B1
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substrate
chamber
processing
production
mode
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KR20110099644A (ko
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마코토 노무라
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가부시키가이샤 히다치 고쿠사이 덴키
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Assigned to 가부시키가이샤 코쿠사이 엘렉트릭 reassignment 가부시키가이샤 코쿠사이 엘렉트릭 권리의 전부이전등록 Assignors: 가부시키가이샤 히다치 고쿠사이 덴키
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B15/00—Systems controlled by a computer
    • G05B15/02—Systems controlled by a computer electric
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Program-control systems
    • G05B19/02—Program-control systems electric
    • G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0464—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3304—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber characterised by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/32—Operator till task planning
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/45—Nc applications
    • G05B2219/45031—Manufacturing semiconductor wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/80—Management or planning

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • Quality & Reliability (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
KR1020110017756A 2010-03-02 2011-02-28 기판 처리 장치 Active KR101358090B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-045764 2010-03-02
JP2010045764A JP5575507B2 (ja) 2010-03-02 2010-03-02 基板処理装置、基板搬送方法、半導体装置の製造方法および基板処理装置のメンテナンス方法

Publications (2)

Publication Number Publication Date
KR20110099644A KR20110099644A (ko) 2011-09-08
KR101358090B1 true KR101358090B1 (ko) 2014-02-04

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Country Status (4)

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US (2) US8588950B2 (https=)
JP (1) JP5575507B2 (https=)
KR (1) KR101358090B1 (https=)
TW (1) TWI471967B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210006287A (ko) * 2019-07-08 2021-01-18 도쿄엘렉트론가부시키가이샤 기판 처리 시스템 및 기판 처리 방법

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5006122B2 (ja) 2007-06-29 2012-08-22 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5128918B2 (ja) 2007-11-30 2013-01-23 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5001828B2 (ja) 2007-12-28 2012-08-15 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5179170B2 (ja) 2007-12-28 2013-04-10 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5821689B2 (ja) * 2011-04-20 2015-11-24 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
KR102128722B1 (ko) * 2012-08-21 2020-07-02 세메스 주식회사 기판 처리 장치의 검사 방법
US9146551B2 (en) * 2012-11-29 2015-09-29 Asm Ip Holding B.V. Scheduler for processing system
CN105009270B (zh) * 2013-02-20 2017-06-30 独立行政法人产业技术综合研究所 小型制造装置以及使用该小型制造装置的制造系统
CN104752128A (zh) * 2013-12-25 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 硅片加工处理的系统及方法
JP6113670B2 (ja) * 2014-01-20 2017-04-12 東京エレクトロン株式会社 基板処理装置、その運用方法及び記憶媒体
JP2015201598A (ja) * 2014-04-10 2015-11-12 株式会社荏原製作所 基板処理装置
JP6123740B2 (ja) * 2014-06-17 2017-05-10 トヨタ自動車株式会社 半導体装置の製造ライン及び半導体装置の製造方法
US20170115657A1 (en) * 2015-10-22 2017-04-27 Lam Research Corporation Systems for Removing and Replacing Consumable Parts from a Semiconductor Process Module in Situ
US10062599B2 (en) 2015-10-22 2018-08-28 Lam Research Corporation Automated replacement of consumable parts using interfacing chambers
JP6240695B2 (ja) 2016-03-02 2017-11-29 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
CN108885968B (zh) * 2016-04-08 2023-12-01 株式会社国际电气 衬底处理装置、半导体器件的制造方法及程序
JP6403722B2 (ja) 2016-07-21 2018-10-10 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、プログラム
KR20220151032A (ko) * 2017-09-20 2022-11-11 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
JP6896682B2 (ja) * 2018-09-04 2021-06-30 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置および半導体装置の製造方法
JP7122236B2 (ja) * 2018-11-28 2022-08-19 東京エレクトロン株式会社 検査装置、メンテナンス方法、及びプログラム
JP7379042B2 (ja) * 2019-09-20 2023-11-14 東京エレクトロン株式会社 真空搬送装置および真空搬送装置の制御方法
JP7660362B2 (ja) * 2020-11-10 2025-04-11 東京エレクトロン株式会社 基板処理システム、基板処理方法、および制御プログラム
KR20220085452A (ko) * 2020-12-15 2022-06-22 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1167869A (ja) * 1997-08-20 1999-03-09 Hitachi Ltd 真空処理装置の運転方法及び真空処理装置
JP2006179528A (ja) * 2004-12-20 2006-07-06 Tokyo Electron Ltd 基板処理装置の検査方法及び検査プログラム
JP2009076504A (ja) * 2007-09-18 2009-04-09 Tokyo Electron Ltd 処理システムの制御装置、処理システムの制御方法および制御プログラムを記憶した記憶媒体

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6714832B1 (en) * 1996-09-11 2004-03-30 Hitachi, Ltd. Operating method of vacuum processing system and vacuum processing system
TW466622B (en) * 1996-09-11 2001-12-01 Hitachi Ltd Operating method of vacuum processing device and vacuum processing device
KR100793453B1 (ko) * 2000-07-07 2008-01-14 동경 엘렉트론 주식회사 처리 장치의 유지 보수 방법, 처리 장치의 자동 검사방법, 처리 장치의 자동 복귀 방법 및 처리 장치를구동하는 소프트웨어의 자기 진단 방법
JP4884594B2 (ja) 2001-03-22 2012-02-29 東京エレクトロン株式会社 半導体製造装置及び制御方法
JP3850710B2 (ja) * 2001-10-29 2006-11-29 株式会社日立製作所 真空処理装置の運転方法
US6733621B2 (en) * 2002-05-08 2004-05-11 Taiwan Semiconductor Manufacturing Co., Ltd. Venting apparatus and method for vacuum system
JP2004152961A (ja) * 2002-10-30 2004-05-27 Mitsubishi Heavy Ind Ltd 搬送制御システム及び搬送制御方法並びに搬送制御プログラム
US7335277B2 (en) * 2003-09-08 2008-02-26 Hitachi High-Technologies Corporation Vacuum processing apparatus
JP4673548B2 (ja) * 2003-11-12 2011-04-20 東京エレクトロン株式会社 基板処理装置及びその制御方法
JP4524132B2 (ja) * 2004-03-30 2010-08-11 東京エレクトロン株式会社 真空処理装置
JP4522783B2 (ja) * 2004-08-03 2010-08-11 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
US7169626B2 (en) * 2004-09-21 2007-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method for detecting alignment mark shielding
US9305814B2 (en) * 2004-12-20 2016-04-05 Tokyo Electron Limited Method of inspecting substrate processing apparatus and storage medium storing inspection program for executing the method
US20060176928A1 (en) * 2005-02-08 2006-08-10 Tokyo Electron Limited Substrate processing apparatus, control method adopted in substrate processing apparatus and program
US20060215347A1 (en) * 2005-03-28 2006-09-28 Tokyo Electron Limited Processing apparatus and recording medium
US7743641B2 (en) * 2005-09-02 2010-06-29 Abb Inc. Compact field-mountable gas chromatograph with a display screen
JP2007081302A (ja) * 2005-09-16 2007-03-29 Toshiba Corp 管理システム、管理方法及び電子装置の製造方法
US8014887B2 (en) * 2006-03-22 2011-09-06 Hitachi Kokusai Electric Inc. Substrate processing apparatus
JP5215852B2 (ja) * 2006-07-31 2013-06-19 東京エレクトロン株式会社 基板処理装置およびコンディショニング要否決定方法
JP4697896B2 (ja) * 2007-03-24 2011-06-08 東京エレクトロン株式会社 半導体製造装置、装置動作パラメータの管理方法、およびプログラム
JP4957426B2 (ja) * 2007-07-19 2012-06-20 東京エレクトロン株式会社 塗布、現像装置及び塗布、現像装置の運転方法並びに記憶媒体
FR2920065A1 (fr) * 2007-08-16 2009-02-20 Commissariat Energie Atomique Procede de codage/decodage spatio-temporel pour systeme de communication multi-antenne de type impulsionnel
JP4986784B2 (ja) * 2007-09-18 2012-07-25 東京エレクトロン株式会社 処理システムの制御装置、処理システムの制御方法および制御プログラムを記憶した記憶媒体
US20090112520A1 (en) * 2007-10-30 2009-04-30 Applied Materials, Inc. Self-aware semiconductor equipment
US20090114346A1 (en) * 2007-11-05 2009-05-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus
JP5294681B2 (ja) * 2008-04-28 2013-09-18 東京エレクトロン株式会社 基板処理装置及びその基板搬送方法
US20100076729A1 (en) * 2008-09-19 2010-03-25 Applied Materials, Inc. Self-diagnostic semiconductor equipment

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1167869A (ja) * 1997-08-20 1999-03-09 Hitachi Ltd 真空処理装置の運転方法及び真空処理装置
JP2006179528A (ja) * 2004-12-20 2006-07-06 Tokyo Electron Ltd 基板処理装置の検査方法及び検査プログラム
JP2009076504A (ja) * 2007-09-18 2009-04-09 Tokyo Electron Ltd 処理システムの制御装置、処理システムの制御方法および制御プログラムを記憶した記憶媒体

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210006287A (ko) * 2019-07-08 2021-01-18 도쿄엘렉트론가부시키가이샤 기판 처리 시스템 및 기판 처리 방법
KR102865588B1 (ko) 2019-07-08 2025-09-30 도쿄엘렉트론가부시키가이샤 기판 처리 시스템 및 기판 처리 방법

Also Published As

Publication number Publication date
JP5575507B2 (ja) 2014-08-20
TW201203433A (en) 2012-01-16
US20140046470A1 (en) 2014-02-13
KR20110099644A (ko) 2011-09-08
TWI471967B (zh) 2015-02-01
US8972036B2 (en) 2015-03-03
JP2011181771A (ja) 2011-09-15
US20110218659A1 (en) 2011-09-08
US8588950B2 (en) 2013-11-19

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