KR101357684B1 - 반도체 장치의 제작 방법 - Google Patents

반도체 장치의 제작 방법 Download PDF

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Publication number
KR101357684B1
KR101357684B1 KR1020070088197A KR20070088197A KR101357684B1 KR 101357684 B1 KR101357684 B1 KR 101357684B1 KR 1020070088197 A KR1020070088197 A KR 1020070088197A KR 20070088197 A KR20070088197 A KR 20070088197A KR 101357684 B1 KR101357684 B1 KR 101357684B1
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South Korea
Prior art keywords
layer
conductive layer
light transmitting
light emitting
conductive
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Expired - Fee Related
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KR1020070088197A
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English (en)
Korean (ko)
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KR20080020579A (ko
Inventor
마사후미 모리스에
고이치로 타나카
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities

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  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020070088197A 2006-08-31 2007-08-31 반도체 장치의 제작 방법 Expired - Fee Related KR101357684B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006235519A JP4919738B2 (ja) 2006-08-31 2006-08-31 半導体装置の作製方法
JPJP-P-2006-00235519 2006-08-31

Publications (2)

Publication Number Publication Date
KR20080020579A KR20080020579A (ko) 2008-03-05
KR101357684B1 true KR101357684B1 (ko) 2014-02-03

Family

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Application Number Title Priority Date Filing Date
KR1020070088197A Expired - Fee Related KR101357684B1 (ko) 2006-08-31 2007-08-31 반도체 장치의 제작 방법

Country Status (4)

Country Link
US (2) US7851250B2 (enExample)
JP (1) JP4919738B2 (enExample)
KR (1) KR101357684B1 (enExample)
CN (2) CN101136312B (enExample)

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JP5184115B2 (ja) * 2008-01-31 2013-04-17 日東電工株式会社 配線回路基板およびその製造方法
KR100846877B1 (ko) 2008-04-10 2008-07-16 주식회사 세종테크 금속증착층을 갖는 광투과성 사출품의 투과표시패턴 형성방법
KR20090110099A (ko) * 2008-04-17 2009-10-21 삼성전자주식회사 박막 트랜지스터 표시판, 이의 제조 방법 및 이를 포함하는평판 표시 장치
KR20100067434A (ko) * 2008-12-11 2010-06-21 한국기계연구원 상이한 레이저 제거 최소 임계값을 이용한 미세 패턴 방법 및 이를 이용한 ｔｆｔ의 형성 방법.
TWI415283B (zh) * 2009-02-18 2013-11-11 Au Optronics Corp Ｘ射線感測器及其製作方法
EP2234100B1 (en) 2009-03-26 2016-11-02 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
CN102576737B (zh) 2009-10-09 2015-10-21 株式会社半导体能源研究所 半导体器件及其制造方法
KR102317763B1 (ko) 2009-11-06 2021-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN102648525B (zh) 2009-12-04 2016-05-04 株式会社半导体能源研究所 显示装置
JP2012064709A (ja) * 2010-09-15 2012-03-29 Sony Corp 固体撮像装置及び電子機器
CN102311095B (zh) * 2011-08-09 2013-11-06 吉林大学 一种在微流控芯片中制备多级金属微纳结构的方法
CN102489873B (zh) * 2011-11-16 2014-07-16 中国科学院上海光学精密机械研究所 在多孔玻璃内部制备三维微流通道的方法
KR101899481B1 (ko) * 2011-12-23 2018-09-18 삼성전자주식회사 전자 장치의 배선 형성 방법
CN103354243B (zh) 2013-06-28 2016-01-06 京东方科技集团股份有限公司 一种薄膜晶体管、其制备方法及相关装置
CN105334680A (zh) * 2014-08-15 2016-02-17 群创光电股份有限公司 阵列基板结构及接触结构
CN113128276A (zh) * 2019-12-31 2021-07-16 格科微电子（上海）有限公司 光学指纹器件的制造方法
CN113568225A (zh) * 2021-07-09 2021-10-29 西安中科微星光电科技有限公司 一种液晶光阀模组封装结构

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JP2004297011A (ja) 2003-03-28 2004-10-21 Matsushita Electric Ind Co Ltd 有機トランジスタの製造方法、及び有機ｅｌ表示装置の製造方法

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Also Published As

Publication number Publication date
KR20080020579A (ko) 2008-03-05
CN101136312B (zh) 2011-05-25
JP4919738B2 (ja) 2012-04-18
US20080057605A1 (en) 2008-03-06
CN101136312A (zh) 2008-03-05
JP2008060324A (ja) 2008-03-13
US20100219413A1 (en) 2010-09-02
US7851250B2 (en) 2010-12-14
US8293593B2 (en) 2012-10-23
CN102208419B (zh) 2013-03-27
CN102208419A (zh) 2011-10-05

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