KR101354585B1 - 반도체 장치 및 그 형성 방법 - Google Patents

반도체 장치 및 그 형성 방법 Download PDF

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Publication number
KR101354585B1
KR101354585B1 KR1020070079098A KR20070079098A KR101354585B1 KR 101354585 B1 KR101354585 B1 KR 101354585B1 KR 1020070079098 A KR1020070079098 A KR 1020070079098A KR 20070079098 A KR20070079098 A KR 20070079098A KR 101354585 B1 KR101354585 B1 KR 101354585B1
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South Korea
Prior art keywords
contact plug
fuse structure
contact
layer
interlayer insulating
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KR1020070079098A
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Korean (ko)
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KR20090014824A (ko
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이경우
김태범
신홍재
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삼성전자주식회사
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Priority to KR1020070079098A priority Critical patent/KR101354585B1/ko
Priority to JP2008203324A priority patent/JP5963384B2/ja
Priority to TW097129833A priority patent/TWI449156B/zh
Priority to US12/187,271 priority patent/US8384131B2/en
Publication of KR20090014824A publication Critical patent/KR20090014824A/ko
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Publication of KR101354585B1 publication Critical patent/KR101354585B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H10D64/011—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020070079098A 2007-08-07 2007-08-07 반도체 장치 및 그 형성 방법 Active KR101354585B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020070079098A KR101354585B1 (ko) 2007-08-07 2007-08-07 반도체 장치 및 그 형성 방법
JP2008203324A JP5963384B2 (ja) 2007-08-07 2008-08-06 半導体装置
TW097129833A TWI449156B (zh) 2007-08-07 2008-08-06 半導體裝置及其形成方法
US12/187,271 US8384131B2 (en) 2007-08-07 2008-08-06 Semiconductor device and methods of forming the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070079098A KR101354585B1 (ko) 2007-08-07 2007-08-07 반도체 장치 및 그 형성 방법

Publications (2)

Publication Number Publication Date
KR20090014824A KR20090014824A (ko) 2009-02-11
KR101354585B1 true KR101354585B1 (ko) 2014-01-22

Family

ID=40345687

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070079098A Active KR101354585B1 (ko) 2007-08-07 2007-08-07 반도체 장치 및 그 형성 방법

Country Status (4)

Country Link
US (1) US8384131B2 (enExample)
JP (1) JP5963384B2 (enExample)
KR (1) KR101354585B1 (enExample)
TW (1) TWI449156B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101631452B1 (ko) 2010-06-03 2016-06-17 삼성전자 주식회사 퓨즈 구조체, 상기 퓨즈 구조체를 포함하는 이퓨즈 및 상기 이퓨즈를 포함하는 반도체 소자
WO2012086104A1 (ja) * 2010-12-22 2012-06-28 パナソニック株式会社 半導体装置とその製造方法
KR20150032609A (ko) 2013-09-16 2015-03-27 삼성전자주식회사 퓨즈 구조물 및 그 블로잉 방법
US9099469B2 (en) 2013-10-11 2015-08-04 Samsung Electronics Co., Ltd. E-fuse structure of semiconductor device
KR102096614B1 (ko) * 2013-10-11 2020-04-03 삼성전자주식회사 반도체 장치의 이-퓨즈 구조체
US11107764B2 (en) 2017-09-28 2021-08-31 Intel Corporation Group III-V semiconductor fuses and their methods of fabrication
CN113451263A (zh) * 2020-03-24 2021-09-28 中芯国际集成电路制造(深圳)有限公司 电熔丝结构及其形成方法
US12154854B2 (en) * 2022-01-07 2024-11-26 Globalfoundries Singapore Pte. Ltd. Electronic fuses with a silicide layer having multiple thicknesses
US12288801B2 (en) * 2022-02-28 2025-04-29 Taiwan Semiconductor Manufactuing Company Limited Semiconductor structure and method of manufacture

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100570066B1 (ko) * 2004-12-28 2006-04-10 주식회사 하이닉스반도체 퓨즈회로부의 면적이 감소된 반도체 메모리 및 그 제조방법
KR100689541B1 (ko) * 2006-01-25 2007-03-02 주식회사 하이닉스반도체 반도체 소자의 제조 방법
KR100827664B1 (ko) * 2006-12-26 2008-05-07 삼성전자주식회사 전기적인 퓨즈, 이를 갖는 반도체 소자, 및 전기적인퓨즈의 프로그래밍과 리딩 방법

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
JPS58158099A (ja) * 1982-03-15 1983-09-20 Nippon Telegr & Teleph Corp <Ntt> プログラム可能な読出し専用記憶素子
JPS6020533A (ja) * 1983-07-13 1985-02-01 Matsushita Electronics Corp 半導体ヒユ−ズ
KR0161379B1 (ko) * 1994-12-23 1999-02-01 윤종용 반도체 소자의 다층배선 및 그 제조방법
JP3625560B2 (ja) * 1995-05-16 2005-03-02 株式会社東芝 半導体装置およびヒューズの切断方法
US5976943A (en) 1996-12-27 1999-11-02 Vlsi Technology, Inc. Method for bi-layer programmable resistor
JP4600652B2 (ja) * 2004-10-13 2010-12-15 ヤマハ株式会社 半導体装置及びその製造方法
KR100718614B1 (ko) * 2003-10-24 2007-05-16 야마하 가부시키가이샤 용량 소자와 퓨즈 소자를 구비한 반도체 장치 및 그 제조방법
KR20060011475A (ko) * 2004-07-30 2006-02-03 주식회사 하이닉스반도체 반도체 메모리 장치 및 그 제조방법
KR100652418B1 (ko) 2005-07-26 2006-12-01 삼성전자주식회사 개선된 퓨즈라인 구조를 갖는 반도체 장치
JP2007088435A (ja) 2005-08-24 2007-04-05 Nec Electronics Corp 半導体装置およびその製造方法
US7579673B2 (en) 2005-08-24 2009-08-25 Nec Electronics Corporation Semiconductor device having electrical fuse
JP4480649B2 (ja) * 2005-09-05 2010-06-16 富士通マイクロエレクトロニクス株式会社 ヒューズ素子及びその切断方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100570066B1 (ko) * 2004-12-28 2006-04-10 주식회사 하이닉스반도체 퓨즈회로부의 면적이 감소된 반도체 메모리 및 그 제조방법
KR100689541B1 (ko) * 2006-01-25 2007-03-02 주식회사 하이닉스반도체 반도체 소자의 제조 방법
KR100827664B1 (ko) * 2006-12-26 2008-05-07 삼성전자주식회사 전기적인 퓨즈, 이를 갖는 반도체 소자, 및 전기적인퓨즈의 프로그래밍과 리딩 방법

Also Published As

Publication number Publication date
JP2009044154A (ja) 2009-02-26
TWI449156B (zh) 2014-08-11
US8384131B2 (en) 2013-02-26
US20090039480A1 (en) 2009-02-12
TW200913227A (en) 2009-03-16
KR20090014824A (ko) 2009-02-11
JP5963384B2 (ja) 2016-08-03

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