TWI449156B - 半導體裝置及其形成方法 - Google Patents

半導體裝置及其形成方法 Download PDF

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Publication number
TWI449156B
TWI449156B TW097129833A TW97129833A TWI449156B TW I449156 B TWI449156 B TW I449156B TW 097129833 A TW097129833 A TW 097129833A TW 97129833 A TW97129833 A TW 97129833A TW I449156 B TWI449156 B TW I449156B
Authority
TW
Taiwan
Prior art keywords
contact plug
contact
fuse structure
conductive pattern
semiconductor device
Prior art date
Application number
TW097129833A
Other languages
English (en)
Chinese (zh)
Other versions
TW200913227A (en
Inventor
李敬雨
金太範
慎烘縡
Original Assignee
三星電子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三星電子股份有限公司 filed Critical 三星電子股份有限公司
Publication of TW200913227A publication Critical patent/TW200913227A/zh
Application granted granted Critical
Publication of TWI449156B publication Critical patent/TWI449156B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW097129833A 2007-08-07 2008-08-06 半導體裝置及其形成方法 TWI449156B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070079098A KR101354585B1 (ko) 2007-08-07 2007-08-07 반도체 장치 및 그 형성 방법

Publications (2)

Publication Number Publication Date
TW200913227A TW200913227A (en) 2009-03-16
TWI449156B true TWI449156B (zh) 2014-08-11

Family

ID=40345687

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097129833A TWI449156B (zh) 2007-08-07 2008-08-06 半導體裝置及其形成方法

Country Status (4)

Country Link
US (1) US8384131B2 (enExample)
JP (1) JP5963384B2 (enExample)
KR (1) KR101354585B1 (enExample)
TW (1) TWI449156B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101631452B1 (ko) 2010-06-03 2016-06-17 삼성전자 주식회사 퓨즈 구조체, 상기 퓨즈 구조체를 포함하는 이퓨즈 및 상기 이퓨즈를 포함하는 반도체 소자
JPWO2012086104A1 (ja) * 2010-12-22 2014-05-22 パナソニック株式会社 半導体装置
KR20150032609A (ko) 2013-09-16 2015-03-27 삼성전자주식회사 퓨즈 구조물 및 그 블로잉 방법
US9099469B2 (en) 2013-10-11 2015-08-04 Samsung Electronics Co., Ltd. E-fuse structure of semiconductor device
KR102096614B1 (ko) * 2013-10-11 2020-04-03 삼성전자주식회사 반도체 장치의 이-퓨즈 구조체
US11107764B2 (en) 2017-09-28 2021-08-31 Intel Corporation Group III-V semiconductor fuses and their methods of fabrication
CN113451263A (zh) * 2020-03-24 2021-09-28 中芯国际集成电路制造(深圳)有限公司 电熔丝结构及其形成方法
US12154854B2 (en) * 2022-01-07 2024-11-26 Globalfoundries Singapore Pte. Ltd. Electronic fuses with a silicide layer having multiple thicknesses
US12288801B2 (en) * 2022-02-28 2025-04-29 Taiwan Semiconductor Manufactuing Company Limited Semiconductor structure and method of manufacture

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0936234A (ja) * 1995-05-16 1997-02-07 Toshiba Corp 半導体装置およびヒューズの切断方法
TW200713558A (en) * 2005-09-05 2007-04-01 Fujitsu Ltd Fuse and method for disconnecting the fuse

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58158099A (ja) * 1982-03-15 1983-09-20 Nippon Telegr & Teleph Corp <Ntt> プログラム可能な読出し専用記憶素子
JPS6020533A (ja) * 1983-07-13 1985-02-01 Matsushita Electronics Corp 半導体ヒユ−ズ
KR0161379B1 (ko) * 1994-12-23 1999-02-01 윤종용 반도체 소자의 다층배선 및 그 제조방법
US5976943A (en) 1996-12-27 1999-11-02 Vlsi Technology, Inc. Method for bi-layer programmable resistor
JP4600652B2 (ja) * 2004-10-13 2010-12-15 ヤマハ株式会社 半導体装置及びその製造方法
TWI246767B (en) * 2003-10-24 2006-01-01 Yamaha Corp Semiconductor device with capacitor and fuse and its manufacture method
KR20060011475A (ko) * 2004-07-30 2006-02-03 주식회사 하이닉스반도체 반도체 메모리 장치 및 그 제조방법
KR100570066B1 (ko) * 2004-12-28 2006-04-10 주식회사 하이닉스반도체 퓨즈회로부의 면적이 감소된 반도체 메모리 및 그 제조방법
KR100652418B1 (ko) 2005-07-26 2006-12-01 삼성전자주식회사 개선된 퓨즈라인 구조를 갖는 반도체 장치
US7579673B2 (en) 2005-08-24 2009-08-25 Nec Electronics Corporation Semiconductor device having electrical fuse
JP2007088435A (ja) 2005-08-24 2007-04-05 Nec Electronics Corp 半導体装置およびその製造方法
KR100689541B1 (ko) * 2006-01-25 2007-03-02 주식회사 하이닉스반도체 반도체 소자의 제조 방법
KR100827664B1 (ko) * 2006-12-26 2008-05-07 삼성전자주식회사 전기적인 퓨즈, 이를 갖는 반도체 소자, 및 전기적인퓨즈의 프로그래밍과 리딩 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0936234A (ja) * 1995-05-16 1997-02-07 Toshiba Corp 半導体装置およびヒューズの切断方法
TW200713558A (en) * 2005-09-05 2007-04-01 Fujitsu Ltd Fuse and method for disconnecting the fuse

Also Published As

Publication number Publication date
JP2009044154A (ja) 2009-02-26
JP5963384B2 (ja) 2016-08-03
US8384131B2 (en) 2013-02-26
US20090039480A1 (en) 2009-02-12
KR101354585B1 (ko) 2014-01-22
TW200913227A (en) 2009-03-16
KR20090014824A (ko) 2009-02-11

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