KR101172931B1 - 교체 가능한 막 전구체 서포트 어셈블리 - Google Patents
교체 가능한 막 전구체 서포트 어셈블리 Download PDFInfo
- Publication number
- KR101172931B1 KR101172931B1 KR1020077014437A KR20077014437A KR101172931B1 KR 101172931 B1 KR101172931 B1 KR 101172931B1 KR 1020077014437 A KR1020077014437 A KR 1020077014437A KR 20077014437 A KR20077014437 A KR 20077014437A KR 101172931 B1 KR101172931 B1 KR 101172931B1
- Authority
- KR
- South Korea
- Prior art keywords
- precursor
- replaceable
- membrane precursor
- wall
- support assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/998,420 | 2004-11-29 | ||
| US10/998,420 US7638002B2 (en) | 2004-11-29 | 2004-11-29 | Multi-tray film precursor evaporation system and thin film deposition system incorporating same |
| US11/007,962 US7484315B2 (en) | 2004-11-29 | 2004-12-09 | Replaceable precursor tray for use in a multi-tray solid precursor delivery system |
| US11/007,962 | 2004-12-09 | ||
| PCT/US2005/035583 WO2006057710A1 (en) | 2004-11-29 | 2005-10-03 | A solid precursor delivery system comprising replaceable stackable trays |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20070095914A KR20070095914A (ko) | 2007-10-01 |
| KR101172931B1 true KR101172931B1 (ko) | 2012-08-10 |
Family
ID=36096210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020077014437A Expired - Lifetime KR101172931B1 (ko) | 2004-11-29 | 2005-10-03 | 교체 가능한 막 전구체 서포트 어셈블리 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7484315B2 (https=) |
| JP (1) | JP4975639B2 (https=) |
| KR (1) | KR101172931B1 (https=) |
| WO (1) | WO2006057710A1 (https=) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11414740B2 (en) | 2019-06-10 | 2022-08-16 | Applied Materials, Inc. | Processing system for forming layers |
| KR102866784B1 (ko) | 2024-10-25 | 2025-10-01 | 주식회사 엠더블유코퍼레이션 | 다공성 촉매가 구비된 고체전구체 기화시스템의 고체 전구체 소스 용기 |
| KR102922124B1 (ko) | 2024-10-25 | 2026-02-04 | 주식회사 엠더블유코퍼레이션 | 복수의 열원이 구비된 고체 전구체 기화시스템 |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6921062B2 (en) * | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
| US20060185597A1 (en) * | 2004-11-29 | 2006-08-24 | Kenji Suzuki | Film precursor evaporation system and method of using |
| US7638002B2 (en) * | 2004-11-29 | 2009-12-29 | Tokyo Electron Limited | Multi-tray film precursor evaporation system and thin film deposition system incorporating same |
| US7708835B2 (en) * | 2004-11-29 | 2010-05-04 | Tokyo Electron Limited | Film precursor tray for use in a film precursor evaporation system and method of using |
| US7644512B1 (en) * | 2006-01-18 | 2010-01-12 | Akrion, Inc. | Systems and methods for drying a rotating substrate |
| JP4960720B2 (ja) * | 2006-02-10 | 2012-06-27 | 東京エレクトロン株式会社 | 膜前駆体蒸発システムにおいて使用される膜前駆体のトレーおよびその使用方法 |
| US8268078B2 (en) * | 2006-03-16 | 2012-09-18 | Tokyo Electron Limited | Method and apparatus for reducing particle contamination in a deposition system |
| JP4847365B2 (ja) * | 2006-03-22 | 2011-12-28 | キヤノン株式会社 | 蒸着源および蒸着装置 |
| EP1862788A1 (en) * | 2006-06-03 | 2007-12-05 | Applied Materials GmbH & Co. KG | Evaporator for organic material, coating installation, and method for use thereof |
| US7877895B2 (en) | 2006-06-26 | 2011-02-01 | Tokyo Electron Limited | Substrate processing apparatus |
| US20080241805A1 (en) * | 2006-08-31 | 2008-10-02 | Q-Track Corporation | System and method for simulated dosimetry using a real time locating system |
| CN101522943B (zh) * | 2006-10-10 | 2013-04-24 | Asm美国公司 | 前体输送系统 |
| US7846256B2 (en) * | 2007-02-23 | 2010-12-07 | Tokyo Electron Limited | Ampule tray for and method of precursor surface area |
| DE102007038278B4 (de) * | 2007-08-08 | 2013-09-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Stofftransport und Ereigniskontrolle in Systemen mit piezoelektrisch aktivierter Tröpfchenemission und Kombinationsmöglichkeiten von Trägermatrix und zu dosierendem Stoff |
| JP4731580B2 (ja) | 2008-03-27 | 2011-07-27 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
| KR20110004081A (ko) * | 2009-07-07 | 2011-01-13 | 삼성모바일디스플레이주식회사 | 증착 장치용 캐니스터, 이를 이용한 증착 장치 및 증착 방법 |
| JP5244723B2 (ja) * | 2009-07-10 | 2013-07-24 | 株式会社日立ハイテクノロジーズ | 成膜装置 |
| KR101287113B1 (ko) * | 2010-06-30 | 2013-07-17 | 삼성디스플레이 주식회사 | 증착 장치용 캐니스터 및 이를 이용한 증착 장치 |
| US20130105483A1 (en) * | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Apparatus for sublimating solid state precursors |
| KR20230080495A (ko) | 2012-05-31 | 2023-06-07 | 엔테그리스, 아이엔씨. | 배취식 침착을 위한 고 물질 플럭스를 갖는 유체의 소스 시약-기반 수송 |
| JP5933372B2 (ja) | 2012-07-02 | 2016-06-08 | 東京エレクトロン株式会社 | 原料容器および原料容器の使用方法 |
| CN103234328B (zh) * | 2013-03-28 | 2015-04-08 | 京东方科技集团股份有限公司 | 一种基板减压干燥方法及装置 |
| JP5987988B2 (ja) | 2013-07-03 | 2016-09-07 | 村田機械株式会社 | 保管容器 |
| US9334566B2 (en) * | 2013-11-25 | 2016-05-10 | Lam Research Corporation | Multi-tray ballast vapor draw systems |
| US9863041B2 (en) * | 2014-10-08 | 2018-01-09 | Lam Research Corporation | Internally heated porous filter for defect reduction with liquid or solid precursors |
| KR102360536B1 (ko) * | 2015-03-06 | 2022-02-08 | 엔테그리스, 아이엔씨. | 고체 공급원 전달을 위한 고-순도 텅스텐 헥사카보닐 |
| EP3162914A1 (en) * | 2015-11-02 | 2017-05-03 | IMEC vzw | Apparatus and method for delivering a gaseous precursor to a reaction chamber |
| US10876205B2 (en) * | 2016-09-30 | 2020-12-29 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
| US11926894B2 (en) | 2016-09-30 | 2024-03-12 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
| JP6849368B2 (ja) * | 2016-09-30 | 2021-03-24 | 芝浦メカトロニクス株式会社 | 基板処理装置 |
| JP6324609B1 (ja) | 2017-06-21 | 2018-05-16 | 日本エア・リキード株式会社 | 固体材料容器およびその固体材料容器に固体材料が充填されている固体材料製品 |
| US11166441B2 (en) * | 2018-07-13 | 2021-11-09 | Versum Materials Us, Llc | Vapor delivery container with flow distributor |
| KR20200020608A (ko) | 2018-08-16 | 2020-02-26 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 승화기 |
| CN110885970B (zh) * | 2018-09-11 | 2024-06-21 | 北京北方华创微电子装备有限公司 | 固体前驱体蒸汽的稳压和纯化装置以及ald沉积设备 |
| JP6901153B2 (ja) * | 2019-02-07 | 2021-07-14 | 株式会社高純度化学研究所 | 薄膜形成用金属ハロゲン化合物の固体気化供給システム。 |
| JP6887688B2 (ja) * | 2019-02-07 | 2021-06-16 | 株式会社高純度化学研究所 | 蒸発原料用容器、及びその蒸発原料用容器を用いた固体気化供給システム |
| FI129579B (en) * | 2019-06-28 | 2022-05-13 | Beneq Oy | Precursor source arrangement and atomic layer deposition apparatus |
| JP7240993B2 (ja) * | 2019-08-27 | 2023-03-16 | 東京エレクトロン株式会社 | 原料ガス供給システム及び原料ガス供給方法 |
| US11624113B2 (en) | 2019-09-13 | 2023-04-11 | Asm Ip Holding B.V. | Heating zone separation for reactant evaporation system |
| US12571096B2 (en) | 2019-09-18 | 2026-03-10 | Tokyo Electron Limited | Raw material gas supply system and raw material gas supply method |
| JP7297082B2 (ja) * | 2019-09-24 | 2023-06-23 | 東京エレクトロン株式会社 | 原料供給装置及び原料供給方法 |
| US11661653B2 (en) | 2019-12-18 | 2023-05-30 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Vapor delivery systems for solid and liquid materials |
| US12540390B2 (en) | 2020-03-17 | 2026-02-03 | Tokyo Electron Limited | Raw material supply system |
| JP7519829B2 (ja) * | 2020-03-17 | 2024-07-22 | 東京エレクトロン株式会社 | 原料供給システム及び原料供給方法 |
| CN119020757B (zh) * | 2024-10-24 | 2025-01-10 | 内蒙古工业大学 | 固态源等离子体增强化学气相沉积设备及方法 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3801294A (en) * | 1971-12-15 | 1974-04-02 | Corning Glass Works | Method of producing glass |
| US4190965A (en) * | 1979-01-15 | 1980-03-04 | Alternative Pioneering Systems, Inc. | Food dehydrator |
| US4817557A (en) * | 1983-05-23 | 1989-04-04 | Anicon, Inc. | Process and apparatus for low pressure chemical vapor deposition of refractory metal |
| US4948623A (en) * | 1987-06-30 | 1990-08-14 | International Business Machines Corporation | Method of chemical vapor deposition of copper, silver, and gold using a cyclopentadienyl/metal complex |
| US4938999A (en) * | 1988-07-11 | 1990-07-03 | Jenkin William C | Process for coating a metal substrate by chemical vapor deposition using a metal carbonyl |
| EP0437110B1 (en) * | 1990-01-08 | 2001-07-11 | Lsi Logic Corporation | Structure for filtering process gases for use with a chemical vapour deposition chamber |
| JPH0598445A (ja) | 1991-07-05 | 1993-04-20 | Chodendo Hatsuden Kanren Kiki Zairyo Gijutsu Kenkyu Kumiai | 有機金属化学気相蒸着用原料容器 |
| JPH06306584A (ja) | 1993-04-21 | 1994-11-01 | Asahi Glass Co Ltd | 真空蒸着用原料成形体の製造方法 |
| US6024915A (en) * | 1993-08-12 | 2000-02-15 | Agency Of Industrial Science & Technology | Coated metal particles, a metal-base sinter and a process for producing same |
| JPH1025576A (ja) * | 1996-04-05 | 1998-01-27 | Dowa Mining Co Ltd | Cvd成膜法における原料化合物の昇華方法 |
| AU6954300A (en) * | 1999-07-12 | 2001-01-30 | Asml Us, Inc. | Method and system for in situ cleaning of semiconductor manufacturing equipment using combination chemistries |
| JP3909792B2 (ja) * | 1999-08-20 | 2007-04-25 | パイオニア株式会社 | 化学気相成長法における原料供給装置及び原料供給方法 |
| US6380080B2 (en) * | 2000-03-08 | 2002-04-30 | Micron Technology, Inc. | Methods for preparing ruthenium metal films |
| US6429127B1 (en) * | 2000-06-08 | 2002-08-06 | Micron Technology, Inc. | Methods for forming rough ruthenium-containing layers and structures/methods using same |
| US6903005B1 (en) * | 2000-08-30 | 2005-06-07 | Micron Technology, Inc. | Method for the formation of RuSixOy-containing barrier layers for high-k dielectrics |
| US20040161545A1 (en) * | 2000-11-28 | 2004-08-19 | Shipley Company, L.L.C. | Adhesion method |
| US6718126B2 (en) * | 2001-09-14 | 2004-04-06 | Applied Materials, Inc. | Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition |
| US6812143B2 (en) * | 2002-04-26 | 2004-11-02 | International Business Machines Corporation | Process of forming copper structures |
| US7300038B2 (en) * | 2002-07-23 | 2007-11-27 | Advanced Technology Materials, Inc. | Method and apparatus to help promote contact of gas with vaporized material |
| US6921062B2 (en) | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
| US6915592B2 (en) * | 2002-07-29 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for generating gas to a processing chamber |
| JP4585852B2 (ja) | 2002-07-30 | 2010-11-24 | エーエスエム アメリカ インコーポレイテッド | 基板処理システム、基板処理方法及び昇華装置 |
| JP2004137480A (ja) * | 2002-09-20 | 2004-05-13 | Tdk Corp | 蛍光体薄膜およびその製造方法ならびにelパネル |
| JP4126219B2 (ja) * | 2002-11-06 | 2008-07-30 | 東京エレクトロン株式会社 | 成膜方法 |
| US7638002B2 (en) | 2004-11-29 | 2009-12-29 | Tokyo Electron Limited | Multi-tray film precursor evaporation system and thin film deposition system incorporating same |
| US8435351B2 (en) * | 2004-11-29 | 2013-05-07 | Tokyo Electron Limited | Method and system for measuring a flow rate in a solid precursor delivery system |
| US20060115590A1 (en) * | 2004-11-29 | 2006-06-01 | Tokyo Electron Limited; International Business Machines Corporation | Method and system for performing in-situ cleaning of a deposition system |
| US7396766B2 (en) * | 2005-03-31 | 2008-07-08 | Tokyo Electron Limited | Low-temperature chemical vapor deposition of low-resistivity ruthenium layers |
| US7482269B2 (en) * | 2005-09-28 | 2009-01-27 | Tokyo Electron Limited | Method for controlling the step coverage of a ruthenium layer on a patterned substrate |
| US7473634B2 (en) * | 2006-09-28 | 2009-01-06 | Tokyo Electron Limited | Method for integrated substrate processing in copper metallization |
-
2004
- 2004-12-09 US US11/007,962 patent/US7484315B2/en not_active Expired - Lifetime
-
2005
- 2005-10-03 WO PCT/US2005/035583 patent/WO2006057710A1/en not_active Ceased
- 2005-10-03 JP JP2007543039A patent/JP4975639B2/ja not_active Expired - Lifetime
- 2005-10-03 KR KR1020077014437A patent/KR101172931B1/ko not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11414740B2 (en) | 2019-06-10 | 2022-08-16 | Applied Materials, Inc. | Processing system for forming layers |
| KR102866784B1 (ko) | 2024-10-25 | 2025-10-01 | 주식회사 엠더블유코퍼레이션 | 다공성 촉매가 구비된 고체전구체 기화시스템의 고체 전구체 소스 용기 |
| KR102922124B1 (ko) | 2024-10-25 | 2026-02-04 | 주식회사 엠더블유코퍼레이션 | 복수의 열원이 구비된 고체 전구체 기화시스템 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20060112883A1 (en) | 2006-06-01 |
| JP2008522029A (ja) | 2008-06-26 |
| KR20070095914A (ko) | 2007-10-01 |
| JP4975639B2 (ja) | 2012-07-11 |
| WO2006057710A1 (en) | 2006-06-01 |
| US7484315B2 (en) | 2009-02-03 |
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