KR101141488B1 - 처리중의 기판이면(裏面) 증착 감소방법 및 장치 - Google Patents

처리중의 기판이면(裏面) 증착 감소방법 및 장치 Download PDF

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Publication number
KR101141488B1
KR101141488B1 KR1020057017575A KR20057017575A KR101141488B1 KR 101141488 B1 KR101141488 B1 KR 101141488B1 KR 1020057017575 A KR1020057017575 A KR 1020057017575A KR 20057017575 A KR20057017575 A KR 20057017575A KR 101141488 B1 KR101141488 B1 KR 101141488B1
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South Korea
Prior art keywords
substrate
focus ring
substrate holder
silicon
focus
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Expired - Fee Related
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KR1020057017575A
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English (en)
Korean (ko)
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KR20050114248A (ko
Inventor
야스노리 하타무라
구니코 히나타
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도쿄엘렉트론가부시키가이샤
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Publication of KR20050114248A publication Critical patent/KR20050114248A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020057017575A 2003-03-21 2004-03-17 처리중의 기판이면(裏面) 증착 감소방법 및 장치 Expired - Fee Related KR101141488B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US45622903P 2003-03-21 2003-03-21
US60/456,229 2003-03-21
PCT/US2004/006076 WO2004095529A2 (en) 2003-03-21 2004-03-17 Method and apparatus for reducing substrate backside deposition during processing

Publications (2)

Publication Number Publication Date
KR20050114248A KR20050114248A (ko) 2005-12-05
KR101141488B1 true KR101141488B1 (ko) 2012-05-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057017575A Expired - Fee Related KR101141488B1 (ko) 2003-03-21 2004-03-17 처리중의 기판이면(裏面) 증착 감소방법 및 장치

Country Status (6)

Country Link
US (1) US8382942B2 (cg-RX-API-DMAC7.html)
JP (1) JP4991286B2 (cg-RX-API-DMAC7.html)
KR (1) KR101141488B1 (cg-RX-API-DMAC7.html)
CN (1) CN1777691B (cg-RX-API-DMAC7.html)
TW (1) TWI252505B (cg-RX-API-DMAC7.html)
WO (1) WO2004095529A2 (cg-RX-API-DMAC7.html)

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US20090221150A1 (en) * 2008-02-29 2009-09-03 Applied Materials, Inc. Etch rate and critical dimension uniformity by selection of focus ring material
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CN101754565B (zh) * 2008-12-03 2012-07-25 北京北方微电子基地设备工艺研究中心有限责任公司 一种电极组件及应用该电极组件的等离子体处理设备
CN101989544B (zh) * 2009-08-07 2012-05-23 中微半导体设备(上海)有限公司 一种可减少基片背面聚合物的结构
US8597462B2 (en) 2010-05-21 2013-12-03 Lam Research Corporation Movable chamber liner plasma confinement screen combination for plasma processing apparatuses
CN101974738B (zh) * 2010-11-19 2012-10-31 理想能源设备有限公司 等离子体增强化学气相沉积装置
JP2013016532A (ja) * 2011-06-30 2013-01-24 Tokyo Electron Ltd シリコン製部品の製造方法及びエッチング処理装置用のシリコン製部品
CN102522305B (zh) * 2011-12-27 2015-01-07 中微半导体设备(上海)有限公司 等离子体处理装置及聚焦环组件
US8721833B2 (en) 2012-02-05 2014-05-13 Tokyo Electron Limited Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof
US8486798B1 (en) 2012-02-05 2013-07-16 Tokyo Electron Limited Variable capacitance chamber component incorporating a semiconductor junction and methods of manufacturing and using thereof
CN103377979B (zh) * 2012-04-30 2016-06-08 细美事有限公司 调节板和具有该调节板的用于处理基板的装置
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US20140034242A1 (en) * 2012-07-31 2014-02-06 Lam Research Corporation Edge ring assembly for plasma processing chamber and method of manufacture thereof
US9589818B2 (en) * 2012-12-20 2017-03-07 Lam Research Ag Apparatus for liquid treatment of wafer shaped articles and liquid control ring for use in same
US10804081B2 (en) * 2013-12-20 2020-10-13 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
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US9428833B1 (en) 2015-05-29 2016-08-30 Lam Research Corporation Method and apparatus for backside deposition reduction by control of wafer support to achieve edge seal
US10109464B2 (en) * 2016-01-11 2018-10-23 Applied Materials, Inc. Minimization of ring erosion during plasma processes
US11251026B2 (en) 2017-03-31 2022-02-15 Mattson Technology, Inc. Material deposition prevention on a workpiece in a process chamber
KR102251664B1 (ko) 2017-03-31 2021-05-14 베이징 이타운 세미컨덕터 테크놀로지 컴퍼니 리미티드 플라즈마 처리 장치를 위한 페디스털 조립체
JP7105666B2 (ja) * 2018-09-26 2022-07-25 東京エレクトロン株式会社 プラズマ処理装置
JP7175160B2 (ja) * 2018-11-05 2022-11-18 東京エレクトロン株式会社 基板処理装置
CN112447547B (zh) * 2019-08-30 2026-08-07 长鑫存储技术有限公司 刻蚀辅助装置、晶圆刻蚀设备及优化晶圆刻蚀效果的方法
JP7465733B2 (ja) * 2019-09-26 2024-04-11 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
TW202605992A (zh) * 2019-09-26 2026-02-01 日商東京威力科創股份有限公司 基板支持器及電漿處理裝置
CN112992631B (zh) * 2019-12-16 2023-09-29 中微半导体设备(上海)股份有限公司 一种下电极组件，其安装方法及等离子体处理装置
CN111074236A (zh) * 2019-12-27 2020-04-28 重庆康佳光电技术研究院有限公司 一种化学气相沉积装置
JP7365912B2 (ja) * 2020-01-10 2023-10-20 東京エレクトロン株式会社 エッジリング及び基板処理装置
US20240014015A1 (en) * 2021-02-12 2024-01-11 Lam Research Corporation C-shroud Modification For Plasma Uniformity Without Impacting Mechanical Strength Or Lifetime Of The C-shroud

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Also Published As

Publication number Publication date
US8382942B2 (en) 2013-02-26
TW200423212A (en) 2004-11-01
JP2006523382A (ja) 2006-10-12
JP4991286B2 (ja) 2012-08-01
CN1777691A (zh) 2006-05-24
WO2004095529A3 (en) 2005-04-21
US20070000614A1 (en) 2007-01-04
KR20050114248A (ko) 2005-12-05
CN1777691B (zh) 2011-11-23
TWI252505B (en) 2006-04-01
WO2004095529A2 (en) 2004-11-04

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