KR101135337B1 - 태양전지소자의 전극형성용 도전성 페이스트, 태양전지소자 및 그 태양전지소자의 제조방법 - Google Patents

태양전지소자의 전극형성용 도전성 페이스트, 태양전지소자 및 그 태양전지소자의 제조방법 Download PDF

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KR101135337B1
KR101135337B1 KR1020107011529A KR20107011529A KR101135337B1 KR 101135337 B1 KR101135337 B1 KR 101135337B1 KR 1020107011529 A KR1020107011529 A KR 1020107011529A KR 20107011529 A KR20107011529 A KR 20107011529A KR 101135337 B1 KR101135337 B1 KR 101135337B1
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solar cell
electrode
cell element
conductive paste
weight
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KR20100075661A (ko
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마사시 나카야마
노부오 오치아이
타카시 히노츠
유타카 나카야마
마사미 사쿠라바
와타루 후지모리
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교토 에렉스 가부시키가이샤
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • H10F77/211Electrodes for devices having potential barriers for photovoltaic cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14Conductive material dispersed in non-conductive inorganic material
    • H01B1/16Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14Photovoltaic cells having only PN homojunction potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/30Coatings
    • H10F77/306Coatings for devices having potential barriers
    • H10F77/311Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells

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  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020107011529A 2008-08-07 2009-07-07 태양전지소자의 전극형성용 도전성 페이스트, 태양전지소자 및 그 태양전지소자의 제조방법 Expired - Fee Related KR101135337B1 (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JPJP-P-2008-204294 2008-08-07
JP2008204294 2008-08-07
JPJP-P-2008-323940 2008-12-19
JP2008323940 2008-12-19
JPJP-P-2009-104088 2009-04-22
JP2009104088 2009-04-22
JP2009113475 2009-05-08
JPJP-P-2009-113475 2009-05-08
PCT/JP2009/003151 WO2010016186A1 (ja) 2008-08-07 2009-07-07 太陽電池素子の電極形成用導電性ペースト及び太陽電池素子並びにその太陽電池素子の製造方法

Related Child Applications (1)

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KR1020127005188A Division KR101225909B1 (ko) 2008-08-07 2009-07-07 태양전지소자의 전극형성용 도전성 페이스트, 태양전지소자 및 그 태양전지소자의 제조방법

Publications (2)

Publication Number Publication Date
KR20100075661A KR20100075661A (ko) 2010-07-02
KR101135337B1 true KR101135337B1 (ko) 2012-04-17

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KR1020107011529A Expired - Fee Related KR101135337B1 (ko) 2008-08-07 2009-07-07 태양전지소자의 전극형성용 도전성 페이스트, 태양전지소자 및 그 태양전지소자의 제조방법
KR1020127005188A Expired - Fee Related KR101225909B1 (ko) 2008-08-07 2009-07-07 태양전지소자의 전극형성용 도전성 페이스트, 태양전지소자 및 그 태양전지소자의 제조방법

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Country Status (7)

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US (2) US8852465B2 (enExample)
EP (3) EP2637216B1 (enExample)
JP (4) JP4754655B2 (enExample)
KR (2) KR101135337B1 (enExample)
CN (1) CN101828267B (enExample)
TW (1) TWI485866B (enExample)
WO (1) WO2010016186A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103295663A (zh) * 2012-01-23 2013-09-11 赫劳斯贵金属北美康舍霍肯有限责任公司 太阳能电池触面的导电性厚膜浆料

Families Citing this family (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5559509B2 (ja) 2009-10-28 2014-07-23 昭栄化学工業株式会社 太陽電池電極形成用導電性ペースト
JP5559510B2 (ja) * 2009-10-28 2014-07-23 昭栄化学工業株式会社 太陽電池素子及びその製造方法
JP2011171673A (ja) * 2010-02-22 2011-09-01 Kyoto Elex Kk 太陽電池素子の電極形成用導電性ペースト及び太陽電池素子並びにその太陽電池素子の製造方法
JP5362615B2 (ja) * 2010-02-22 2013-12-11 Dowaエレクトロニクス株式会社 銀粉及びその製造方法
JP5285639B2 (ja) * 2010-02-26 2013-09-11 京都エレックス株式会社 太陽電池素子の電極形成用導電性ペースト
JP2011204872A (ja) * 2010-03-25 2011-10-13 Kyoto Elex Kk 太陽電池素子の受光面電極形成用導電性ペースト及び太陽電池素子並びにその太陽電池素子の製造方法
US8889980B2 (en) * 2010-05-04 2014-11-18 E I Du Pont De Nemours And Company Thick-film pastes containing lead—tellurium—lithium—oxides, and their use in the manufacture of semiconductor devices
CN102456427A (zh) * 2010-10-30 2012-05-16 比亚迪股份有限公司 一种导电浆料及其制备方法
US8691612B2 (en) * 2010-12-10 2014-04-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of creating micro-scale silver telluride grains covered with bismuth nanoparticles
CA2822592A1 (en) * 2010-12-24 2012-06-28 Shin-Etsu Chemical Co., Ltd. Method for manufacturing solar cell element and solar cell element
JP5884077B2 (ja) 2010-12-29 2016-03-15 パナソニックIpマネジメント株式会社 太陽電池及び太陽電池モジュール
JP5789544B2 (ja) * 2011-03-02 2015-10-07 韓國電子通信研究院Electronics and Telecommunications Research Institute 伝導性組成物並びにこれを含むシリコン太陽電池及びその製造方法
KR101814014B1 (ko) 2011-03-25 2018-01-03 삼성전자주식회사 도전성 페이스트, 상기 도전성 페이스트를 사용하여 형성된 전극을 포함하는 전자 소자 및 태양 전지
US8512463B2 (en) 2011-04-05 2013-08-20 E I Du Pont De Nemours And Company Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices
US20120255605A1 (en) * 2011-04-06 2012-10-11 E. I. Du Pont De Nemours And Company Method of manufacturing solar cell electrode
CN102185001B (zh) * 2011-04-18 2013-04-17 西安交通大学 硅基纳米氧化锌粉体薄膜异质结太阳能的结构及其制备
JP5338846B2 (ja) * 2011-04-25 2013-11-13 横浜ゴム株式会社 太陽電池集電電極形成方法、太陽電池セルおよび太陽電池モジュール
WO2012160921A1 (ja) * 2011-05-26 2012-11-29 株式会社 村田製作所 導電性ペースト及び太陽電池
EP2743967A4 (en) * 2011-07-19 2015-06-03 Hitachi Chemical Co Ltd COMPOSITION FOR FORMING AN N-LEADING DIFFUSION LAYER, MANUFACTURING METHOD FOR AN N-LEADING DIFFUSION LAYER AND MANUFACTURING METHOD FOR A SOLAR CELL ELEMENT
US8691119B2 (en) 2011-08-11 2014-04-08 E I Du Pont De Nemours And Company Thick film paste containing lead-tellurium-lithium-titanium-oxide and its use in the manufacture of semiconductor devices
US8696948B2 (en) 2011-08-11 2014-04-15 E I Du Pont De Nemours And Company Thick film paste containing lead—tellurium—lithium—titanium—oxide and its use in the manufacture of semiconductor devices
WO2013062549A1 (en) * 2011-10-27 2013-05-02 Wuxi Calex Science And Technology Co., Ltd. Electro-conductive composition for forming semiconductor electrodes
KR102100291B1 (ko) 2011-11-11 2020-04-13 삼성전자주식회사 도전성 페이스트, 상기 도전성 페이스트를 사용하여 형성된 전극을 포함하는 전자 소자 및 태양 전지
KR20130064659A (ko) * 2011-12-08 2013-06-18 제일모직주식회사 태양전지 전극용 페이스트 조성물 및 이로부터 제조된 전극
KR101985929B1 (ko) 2011-12-09 2019-06-05 삼성전자주식회사 도전성 페이스트, 상기 도전성 페이스트를 사용하여 형성된 전극을 포함하는 전자 소자 및 태양 전지
TW201332897A (zh) * 2012-01-10 2013-08-16 日立化成股份有限公司 阻擋層形成用組成物、太陽電池用基板的製造方法以及太陽電池元件的製造方法
JP5339013B1 (ja) * 2012-01-10 2013-11-13 日立化成株式会社 太陽電池用基板の製造方法および太陽電池素子の製造方法
TW201335070A (zh) * 2012-01-10 2013-09-01 日立化成股份有限公司 阻擋層形成用組成物、阻擋層、太陽電池用基板的製造方法以及太陽電池元件的製造方法
KR101363344B1 (ko) 2012-01-10 2014-02-19 주식회사 젠스엔지니어링 전도성 페이스트를 전극으로 사용하는 실리콘 태양전지 모듈 및 그 제조 방법.
KR101909143B1 (ko) * 2012-01-20 2018-10-17 엘지전자 주식회사 양면 수광형 태양전지
JP5839574B2 (ja) * 2012-03-21 2016-01-06 京都エレックス株式会社 加熱硬化型導電性ペースト組成物
US20130248777A1 (en) * 2012-03-26 2013-09-26 Heraeus Precious Metals North America Conshohocken Llc Low silver content paste composition and method of making a conductive film therefrom
JP5600702B2 (ja) * 2012-03-28 2014-10-01 京都エレックス株式会社 太陽電池素子の電極形成用導電性ペースト
TW201349254A (zh) * 2012-04-17 2013-12-01 Heraeus Precious Metals North America Conshohocken Llc 用於太陽能電池接點的導電厚膜膏
KR20130117345A (ko) 2012-04-17 2013-10-25 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 태양 전지 접촉을 위한 전도성 후막 페이스트용 텔루륨 무기 반응 시스템
EP2843667B1 (en) 2012-04-26 2017-09-06 Osaka University Transparent conductive ink, and method for producing transparent conductive pattern
US8845932B2 (en) 2012-04-26 2014-09-30 E I Du Pont De Nemours And Company Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices
JP2013243279A (ja) * 2012-05-22 2013-12-05 Namics Corp 太陽電池の電極形成用導電性ペースト
JP2015528178A (ja) * 2012-06-12 2015-09-24 ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー 接着促進剤を有する導電性ペースト
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JP5690780B2 (ja) 2012-07-18 2015-03-25 株式会社ノリタケカンパニーリミテド Ag電極形成用ペースト組成物とその製造方法ならびに太陽電池
TW201407635A (zh) * 2012-08-09 2014-02-16 Darfon Materials Corp 銀漿及其用於製造光伏元件之用途
US8900488B2 (en) 2012-09-06 2014-12-02 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
EP2899761A4 (en) * 2012-09-18 2016-04-20 Heraeus Precious Metals North America Conshohocken Llc CONDUCTIVE PASTE AND SOLAR CELL
JP2014078594A (ja) * 2012-10-10 2014-05-01 Noritake Co Ltd ペースト組成物と太陽電池
CN102956283B (zh) * 2012-10-25 2016-08-03 上海玻纳电子科技有限公司 一种新型高效晶硅太阳能电池用无铅化银浆及其制备与应用
EP2749545B1 (en) 2012-12-28 2018-10-03 Heraeus Deutschland GmbH & Co. KG Binary glass frits used in N-Type solar cell production
CN103000249B (zh) * 2012-12-28 2016-09-28 上海匡宇科技股份有限公司 一种太阳能电池正面银浆及其制备方法
KR20140092744A (ko) 2012-12-29 2014-07-24 제일모직주식회사 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극
EP2763141B1 (en) * 2013-02-01 2016-02-03 Heraeus Precious Metals North America Conshohocken LLC Low fire silver paste
KR101587683B1 (ko) 2013-02-15 2016-01-21 제일모직주식회사 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극
EP2973180B1 (en) 2013-03-15 2020-01-15 OLogN Technologies AG Systems, methods and apparatuses for securely storing and providing payment information
ES2684721T3 (es) * 2013-04-02 2018-10-04 Heraeus Deutschland GmbH & Co. KG Partículas que comprenden AI, Si y Mg en pastas electroconductoras y preparación de células fotovoltaicas
JP6170710B2 (ja) * 2013-04-10 2017-07-26 株式会社ノリタケカンパニーリミテド 太陽電池用導電性ペースト組成物の製造方法
KR102032280B1 (ko) * 2013-04-25 2019-10-15 엘지전자 주식회사 태양 전지의 전극용 페이스트 조성물
WO2014185537A1 (ja) * 2013-05-17 2014-11-20 株式会社カネカ 太陽電池およびその製造方法、ならびに太陽電池モジュール
TW201511296A (zh) 2013-06-20 2015-03-16 Plant PV 用於矽太陽能電池之核-殼型鎳粒子金屬化層
CN104347735A (zh) * 2013-07-25 2015-02-11 比亚迪股份有限公司 一种太阳能电池片和太阳能电池组件
US9159864B2 (en) 2013-07-25 2015-10-13 First Solar, Inc. Back contact paste with Te enrichment and copper doping control in thin film photovoltaic devices
US9761742B2 (en) 2013-12-03 2017-09-12 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
US9793025B2 (en) 2013-12-03 2017-10-17 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
JP6242198B2 (ja) 2013-12-10 2017-12-06 京都エレックス株式会社 半導体デバイスの導電膜形成用導電性ペースト、および半導体デバイス、並びに半導体デバイスの製造方法
TWI517430B (zh) 2013-12-31 2016-01-11 東旭能興業有限公司 太陽能電池單元及其製造方法
CN104752556A (zh) * 2013-12-31 2015-07-01 东旭能兴业有限公司 太阳能电池单元及其制造方法
US9218979B2 (en) * 2014-01-16 2015-12-22 Phononic Devices, Inc. Low resistivity ohmic contact
KR101600874B1 (ko) * 2014-05-16 2016-03-09 덕산하이메탈(주) 은 페이스트 조성물 및 이를 이용하여 제조된 태양전지
CN104021841B (zh) * 2014-06-25 2016-09-28 西安工程大学 一种碳纳米管复合铜厚膜导电浆料及其制备方法
TWI505294B (zh) * 2014-12-08 2015-10-21 Giga Solar Materials Corp 一種含無鉛玻璃熔塊之導電漿(六)
JP2016115873A (ja) * 2014-12-17 2016-06-23 京都エレックス株式会社 太陽電池電極形成用導電性ペースト、並びに、これを用いた太陽電池素子および太陽電池モジュール
KR101696985B1 (ko) * 2014-12-30 2017-01-17 삼성에스디아이 주식회사 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극
KR20170014734A (ko) * 2015-07-31 2017-02-08 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US10784383B2 (en) 2015-08-07 2020-09-22 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
EP3335245A4 (en) 2015-08-14 2019-03-13 Henkel AG & Co. KGaA SINTERABLE COMPOSITION FOR USE IN PHOTOVOLTAIC SOLAR CELLS
US10550291B2 (en) 2015-08-25 2020-02-04 Hitachi Chemical Co., Ltd. Core-shell, oxidation-resistant, electrically conducting particles for low temperature conductive applications
US10418497B2 (en) 2015-08-26 2019-09-17 Hitachi Chemical Co., Ltd. Silver-bismuth non-contact metallization pastes for silicon solar cells
CN108028187B (zh) 2015-09-24 2022-06-07 东洋铝株式会社 膏状组合物及硅锗层的形成方法
US9741878B2 (en) 2015-11-24 2017-08-22 PLANT PV, Inc. Solar cells and modules with fired multilayer stacks
JP2016122840A (ja) * 2015-12-18 2016-07-07 日立化成株式会社 素子及び太陽電池並びに電極用ペースト組成物
GB201601034D0 (en) 2016-01-20 2016-03-02 Johnson Matthey Plc Conductive paste,electrode and solar cell
JP6714275B2 (ja) * 2016-08-23 2020-06-24 ナミックス株式会社 導電性ペースト及び太陽電池
TWI745562B (zh) 2017-04-18 2021-11-11 美商太陽帕斯特有限責任公司 導電糊料組成物及用其製成的半導體裝置
TWI638793B (zh) * 2017-04-28 2018-10-21 碩禾電子材料股份有限公司 用於太陽能電池的導電漿、太陽能電池及其製造方法以及太陽能電池模組
CN107274965B (zh) * 2017-07-03 2019-07-05 云南科威液态金属谷研发有限公司 基于低熔点金属微纳米粉末的电子浆料及其制造方法
WO2019041455A1 (zh) * 2017-08-31 2019-03-07 无锡帝科电子材料股份有限公司 用于制备太阳能电池电极的玻璃粉料、包括其的糊剂组合物、太阳能电池电极及太阳能电池
JP6877750B2 (ja) * 2017-12-06 2021-05-26 ナミックス株式会社 導電性ペースト
RU2690091C1 (ru) * 2018-11-08 2019-05-30 Общество с ограниченной ответственностью "Научное Предприятие Монокристалл Пасты" Алюминиевая паста для изготовления тыльного контакта кремниевых солнечных элементов c тыльной диэлектрической пассивацией
CN114946039A (zh) * 2020-02-14 2022-08-26 硕禾电子材料股份有限公司 用于异质结太阳能电池的导电糊膏、异质结太阳能电池与电极结构
KR102455164B1 (ko) * 2020-03-13 2022-10-17 주식회사 헤드솔라 페이스트, 이의 제조방법 및 이를 이용한 태양전지 광전극용 차단층 제조방법
CN115175777B (zh) 2020-03-26 2025-02-14 同和电子科技有限公司 银粉和其制造方法、以及导电性糊剂
CN112909128A (zh) * 2021-02-07 2021-06-04 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) 异质结太阳能电池片的制造方法及异质结太阳能电池片
EP4646932A3 (en) * 2021-04-30 2025-12-24 Arkion Life Sciences, LLC Insect, bacterial, and/or fungal control composition
US12055737B2 (en) * 2022-05-18 2024-08-06 GE Precision Healthcare LLC Aligned and stacked high-aspect ratio metallized structures
CN116275019B (zh) * 2023-03-24 2026-02-03 华能新能源股份有限公司 一种光伏组件边框及其制备方法
US20260024685A1 (en) * 2024-07-22 2026-01-22 Dongguan Littelfuse Electronics Company Limited High-Temperature Ni-Barrier Sintering Paste

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05128910A (ja) * 1991-11-07 1993-05-25 Sumitomo Metal Mining Co Ltd 導体ペースト
JP2001284754A (ja) * 2000-03-30 2001-10-12 Kyocera Corp ガラスセラミック回路基板
WO2007125879A1 (ja) * 2006-04-25 2007-11-08 Sharp Corporation 太陽電池電極用導電性ペースト

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5066621A (en) 1990-06-21 1991-11-19 Johnson Matthey Inc. Sealing glass composition and electrically conductive formulation containing same
WO1997013280A1 (en) 1995-10-05 1997-04-10 Ebara Solar, Inc. Self-aligned locally deep- diffused emitter solar cell
JP2001313400A (ja) * 2000-04-28 2001-11-09 Kyocera Corp 太陽電池素子の形成方法
US6599446B1 (en) * 2000-11-03 2003-07-29 General Electric Company Electrically conductive polymer composite compositions, method for making, and method for electrical conductivity enhancement
EP1608699A2 (en) 2003-04-01 2005-12-28 Aguila Technologies, Inc. Thermally conductive adhesive composition and process for device attachment
JP3853793B2 (ja) 2004-02-27 2006-12-06 京セラケミカル株式会社 太陽電池用導電性ペースト、太陽電池及び太陽電池の製造方法
US7556748B2 (en) * 2005-04-14 2009-07-07 E. I. Du Pont De Nemours And Company Method of manufacture of semiconductor device and conductive compositions used therein
JP2007081059A (ja) * 2005-09-13 2007-03-29 Toyo Aluminium Kk アルミニウムペースト組成物およびそれを用いた太陽電池素子
JP2007134387A (ja) * 2005-11-08 2007-05-31 Sharp Corp 光電変換素子およびその電極形成方法
US8721931B2 (en) * 2005-12-21 2014-05-13 E I Du Pont De Nemours And Company Paste for solar cell electrode, solar cell electrode manufacturing method, and solar cell
JP4948876B2 (ja) * 2006-04-03 2012-06-06 京セラ株式会社 太陽電池素子用導電性ペースト及びそれを用いた太陽電池素子の製造方法。
KR101394704B1 (ko) 2006-06-30 2014-05-16 미쓰비시 마테리알 가부시키가이샤 태양 전지의 전극 형성용 조성물 및 그 전극의 형성 방법, 그리고 그 형성 방법에 의해 얻어진 전극을 사용한 태양 전지
CN101164943A (zh) * 2006-10-19 2008-04-23 北京印刷学院 一种用作电子浆料组成中粘接相的无铅碲酸盐低熔玻璃
JP5272373B2 (ja) * 2007-10-17 2013-08-28 セントラル硝子株式会社 多結晶Si太陽電池
WO2009152238A2 (en) 2008-06-11 2009-12-17 E. I. Du Pont De Nemours And Company A process of forming a silicon solar cell

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05128910A (ja) * 1991-11-07 1993-05-25 Sumitomo Metal Mining Co Ltd 導体ペースト
JP2001284754A (ja) * 2000-03-30 2001-10-12 Kyocera Corp ガラスセラミック回路基板
WO2007125879A1 (ja) * 2006-04-25 2007-11-08 Sharp Corporation 太陽電池電極用導電性ペースト

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103295663A (zh) * 2012-01-23 2013-09-11 赫劳斯贵金属北美康舍霍肯有限责任公司 太阳能电池触面的导电性厚膜浆料

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