CN114946039A - 用于异质结太阳能电池的导电糊膏、异质结太阳能电池与电极结构 - Google Patents

用于异质结太阳能电池的导电糊膏、异质结太阳能电池与电极结构 Download PDF

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CN114946039A
CN114946039A CN202080092972.1A CN202080092972A CN114946039A CN 114946039 A CN114946039 A CN 114946039A CN 202080092972 A CN202080092972 A CN 202080092972A CN 114946039 A CN114946039 A CN 114946039A
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conductive paste
solar cell
heterojunction solar
metal salt
carbonate
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陈星君
郭怀仁
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Giga Solar Materials Corp
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Giga Solar Materials Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Sustainable Energy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Sustainable Development (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Conductive Materials (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明提供一种用于异质结(HJT)太阳能电池的导电糊膏、异质结太阳能电池与电极结构。所述导电糊膏包括导电粒子、聚合性树脂与金属盐。以所述导电糊膏的总重量计，导电糊膏的含量为75wt％～97wt％、聚合性树脂的含量为2wt％～20wt％、金属盐的含量为0.05wt％～5wt％。所述金属盐包括IA族金属盐、IIA族金属盐或其组合。

Description

PCT国内申请，说明书已公开。

Claims (23)

  1. PCT国内申请，权利要求书已公开。
CN202080092972.1A 2020-02-14 2020-02-14 用于异质结太阳能电池的导电糊膏、异质结太阳能电池与电极结构 Pending CN114946039A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/075351 WO2021159499A1 (zh) 2020-02-14 2020-02-14 用于异质结太阳能电池的导电糊膏、异质结太阳能电池与电极结构

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CN114946039A true CN114946039A (zh) 2022-08-26

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EP (1) EP4106013A4 (zh)
CN (1) CN114946039A (zh)
WO (1) WO2021159499A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114530278B (zh) * 2022-03-22 2024-06-11 合肥中南光电有限公司 一种hjt电池用导电浆料及其生产工艺
CN116189958A (zh) * 2023-02-10 2023-05-30 河北光兴半导体技术有限公司 低温导电浆料组合物、低温导电浆料、导电涂层、电极和异质结太阳能电池

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4789411A (en) * 1986-03-31 1988-12-06 Tatsuta Electric Wire And Cable Co., Ltd. Conductive copper paste composition
CN101828267A (zh) * 2008-08-07 2010-09-08 京都一来电子化学股份有限公司 太阳能电池元件的电极形成用导电性糊料及太阳能电池元件以及该太阳能电池元件的制造方法
WO2015118760A1 (ja) * 2014-02-06 2015-08-13 横浜ゴム株式会社 導電性組成物、太陽電池セルおよび太陽電池モジュール
CN105047253A (zh) * 2015-06-29 2015-11-11 青岛恩高运动控制技术有限公司 一种太阳能电池用浆料
CN107216041A (zh) * 2017-05-04 2017-09-29 无锡帝科电子材料科技有限公司 用于制备太阳能电池电极的玻璃粉料、包括其的糊剂组合物、太阳能电池电极及太阳能电池

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102473476A (zh) * 2009-07-28 2012-05-23 株式会社东进世美肯 低温烧成用热固性电极糊剂
CN103226989B (zh) * 2012-01-30 2016-01-06 比亚迪股份有限公司 腐蚀性载体及制备方法、晶体硅太阳能电池正/背面银导电浆料及制备方法
KR20130110960A (ko) * 2012-03-30 2013-10-10 삼성전자주식회사 도전성 페이스트 조성물 및 이를 이용한 태양전지
CN103915131A (zh) * 2013-01-04 2014-07-09 硕禾电子材料股份有限公司 用于太阳能电池的导电组合物
CN104599741A (zh) * 2015-01-30 2015-05-06 江苏欧耐尔新型材料有限公司 高方阻硅太阳能电池正面银电极浆料
CN104882187A (zh) * 2015-03-23 2015-09-02 江西九鹏科技股份有限公司 一种聚噻吩基低密度复合导电浆料及其制备方法
CN104868011A (zh) * 2015-03-30 2015-08-26 无锡帝科电子材料科技有限公司 N型全铝背发射极太阳能电池的制作方法和该方法制备的太阳能电池
US10431700B2 (en) * 2017-06-09 2019-10-01 Giga Solar Materials Corp. Conductive paste composition for providing enhanced adhesion strength to a semiconductor substrate and its use

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4789411A (en) * 1986-03-31 1988-12-06 Tatsuta Electric Wire And Cable Co., Ltd. Conductive copper paste composition
CN101828267A (zh) * 2008-08-07 2010-09-08 京都一来电子化学股份有限公司 太阳能电池元件的电极形成用导电性糊料及太阳能电池元件以及该太阳能电池元件的制造方法
US20150020880A1 (en) * 2008-08-07 2015-01-22 Kyoto Elex Co., Ltd. Electro-Conductive Paste for Forming an Electrode of a Solar Cell Device, a Solar Cell Device and Method for Producing the Solar Cell Device
WO2015118760A1 (ja) * 2014-02-06 2015-08-13 横浜ゴム株式会社 導電性組成物、太陽電池セルおよび太陽電池モジュール
TW201542638A (zh) * 2014-02-06 2015-11-16 Yokohama Rubber Co Ltd 導電性組成物、太陽能電池單元及太陽能電池模組
CN105047253A (zh) * 2015-06-29 2015-11-11 青岛恩高运动控制技术有限公司 一种太阳能电池用浆料
CN107216041A (zh) * 2017-05-04 2017-09-29 无锡帝科电子材料科技有限公司 用于制备太阳能电池电极的玻璃粉料、包括其的糊剂组合物、太阳能电池电极及太阳能电池

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EP4106013A4 (en) 2023-10-25
WO2021159499A1 (zh) 2021-08-19

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