KR101129523B1 - 반도체 가공용 점착(粘着)시트 및 반도체 칩의 제조 방법 - Google Patents
반도체 가공용 점착(粘着)시트 및 반도체 칩의 제조 방법 Download PDFInfo
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- KR101129523B1 KR101129523B1 KR1020050046567A KR20050046567A KR101129523B1 KR 101129523 B1 KR101129523 B1 KR 101129523B1 KR 1020050046567 A KR1020050046567 A KR 1020050046567A KR 20050046567 A KR20050046567 A KR 20050046567A KR 101129523 B1 KR101129523 B1 KR 101129523B1
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- Prior art keywords
- wafer
- thickness
- adhesive sheet
- rigid substrate
- vibration damping
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/29—Laminated material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/16—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the structure of the carrier layer
- C09J2301/162—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the structure of the carrier layer the carrier being a laminate constituted by plastic layers only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
- Dicing (AREA)
Abstract
Description
|
강성기재 | 진동완화층 | 점착층 | 결과 | ||||||
재질 | 두께 (μm) |
영률 (MPa) |
두께 (μm) |
tan δ치 | 두께 (μm) |
칩코너균열 (균열칩수/칩총수) |
협소화율(%) | 전사성 | 연삭면의 변색 | |
실시예1 | PET | 25 | 4000 | 45 | 0.6 | 40 | 0/240 | 7 | 양호 | 없음 |
실시예2 | PET | 25 | 4000 | 45 | 0.6 | 200 | 0/240 | 7 | 양호 | 없음 |
실시예3 | PET | 125 | 4000 | 45 | 0.6 | 40 | 0/240 | 2 | 양호 | 없음 |
실시예4 | PET | 25 | 4000 | 75 | 0.6 | 40 | 0/240 | 7 | 양호 | 없음 |
실시예5 | PET | 25 | 4000 | 45 | 0.53 | 40 | 0/240 | 7 | 양호 | 없음 |
실시예6 | OPP | 100 | 1600 | 45 | 0.6 | 40 | 0/240 | 4 | 양호 | 없음 |
실시예7 | PEN | 25 | 6000 | 45 | 0.6 | 40 | 0/240 | 5 | 양호 | 없음 |
실시예8 | PI | 25 | 9000 | 45 | 0.6 | 40 | 0/240 | 3 | 양호 | 없음 |
비교예1 | PET | 25 | 4000 | - | - | 40 | 240/240 | 7 | 양호 | 없음 |
비교예2 | CPP | 100 | 600 | 45 | 0.6 | 40 | 0/240 | 30 | 양호 | 없음 |
비교예3 | PET | 25 | 4000 | 50 | 0.17 | 40 | 50/240 | 7 | 양호 | 없음 |
비교예4 | PET | 25 | 4000 | 50 | 0.21 | 40 | 24/240 | 7 | 양호 | 없음 |
비교예5 | PET | 25 | 4000 | 110 | 0.6 | 40 | 12/240 | 7 | 양호 | 없음 |
비교예6 | PET | 188 | 4000 | 45 | 0.6 | 40 | 0/240 | 2 | 불량 | 없음 |
비교예7 | PET | 25 | 4000 | 45 | 0.6 | 40 | 0/240 | 8 | 양호 | 있음 |
Claims (4)
- 반도체 회로가 형성된 웨이퍼의 표면에 상기 웨이퍼의 두께보다도 얕은 깊이의 홀을 형성하고, 상기 웨이퍼의 이면연삭을 행함으로써 웨이퍼의 두께를 얇게 함과 동시에 최종적으로는 개개의 칩에 대한 분할을 행하는 반도체 칩의 제조방법에 이용되는 점착시트로서, 강성기재와 상기 강성기재의 한 면에 설치된 진동완화층과, 상기 강성기재의 다른쪽 면에 설치된 점착(粘着)층으로 구성되며, 상기 강성기재의 두께가 10μm~ 150μm 이며, 또한 영률이 1000 MPa~30000MPa이고, 상기 진동완화층의 두께가 5μm~80μm이며 또한 -5~ 120°C 에서 동적점탄성(動的粘憚性) tan δ의 최대치가 0.5 이상인 점착시트.
- 제 1항에 있어서, 상기 점착시트는 두께 100μm 이하의 반도체 칩을 제조하기 위하여 이용되는 점착시트.
- 반도체 회로가 형성된 웨이퍼의 표면에 상기 웨이퍼의 두께보다도 얕은 깊이의 홀을 형성하고, 상기 반도체 회로가 형성된 웨이퍼의 표면에 강성기재와 상기 강성기재의 한 면에 설치된 진동 완화층과 상기 강성기재의 다른 쪽면에 설치된 점착(粘着)층으로 구성되며, 상기 강성기재의 두께가 10μm~ 150μm 이며, 또한 영률이 1000 MPa~30000MPa이고, 상기 진동완화층의 두께는 5μm~80μm이며, 또한 -5°C~ 120°C 에서 동적점탄성(動的粘憚性) tan δ의 최대치가 0.5 이상인 점착시트를 첨부하고, 그 후에 상기 웨이퍼를 이면연삭함으로써 웨이퍼의 두께를 얇게 만듦과 동시에 최종적으로는 개개의 칩에 대한 분할을 시행하는 반도체칩의 제조방법.
- 제3항에 있어서, 상기 반도체칩의 제조방법은 두께 100μm이하의 반도체 칩을 제조하는 반도체칩의 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004164704A JP4574234B2 (ja) | 2004-06-02 | 2004-06-02 | 半導体加工用粘着シートおよび半導体チップの製造方法 |
JPJP-P-2004-00164704 | 2004-06-02 |
Publications (2)
Publication Number | Publication Date |
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KR20060046354A KR20060046354A (ko) | 2006-05-17 |
KR101129523B1 true KR101129523B1 (ko) | 2012-03-30 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020050046567A KR101129523B1 (ko) | 2004-06-02 | 2005-06-01 | 반도체 가공용 점착(粘着)시트 및 반도체 칩의 제조 방법 |
Country Status (3)
Country | Link |
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US (1) | US7351645B2 (ko) |
JP (1) | JP4574234B2 (ko) |
KR (1) | KR101129523B1 (ko) |
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2005
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JP2001127029A (ja) | 1999-10-27 | 2001-05-11 | Lintec Corp | ウエハ裏面研削時の表面保護シートおよび半導体チップの製造方法 |
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JP2005343997A (ja) | 2005-12-15 |
US7351645B2 (en) | 2008-04-01 |
JP4574234B2 (ja) | 2010-11-04 |
KR20060046354A (ko) | 2006-05-17 |
US20050269717A1 (en) | 2005-12-08 |
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