KR101054540B1 - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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KR101054540B1
KR101054540B1 KR20040097986A KR20040097986A KR101054540B1 KR 101054540 B1 KR101054540 B1 KR 101054540B1 KR 20040097986 A KR20040097986 A KR 20040097986A KR 20040097986 A KR20040097986 A KR 20040097986A KR 101054540 B1 KR101054540 B1 KR 101054540B1
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sealing body
lead
sealing
cutting
resin
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Korean (ko)
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KR20050051572A (ko
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단노다다또시
다야히로요시
시미즈요시하루
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르네사스 일렉트로닉스 가부시키가이샤
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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
KR20040097986A 2003-11-27 2004-11-26 반도체 장치 및 그 제조 방법 Expired - Lifetime KR101054540B1 (ko)

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Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005159103A (ja) 2003-11-27 2005-06-16 Renesas Technology Corp 半導体装置およびその製造方法
US7772974B2 (en) * 2005-02-28 2010-08-10 Cypak Ab Tamper evident seal system and method
US7304395B2 (en) * 2005-07-05 2007-12-04 Oki Electric Industry Co., Ltd. Semiconductor chip package
DE112006003664B4 (de) * 2006-02-01 2011-09-08 Infineon Technologies Ag Herstellung eines QFN-Gehäuses für eine integrierte Schaltung und damit hergestelltes QFN-Gehäuse und Verwendung eines Leiterrahmens dabei
JP5353153B2 (ja) * 2007-11-09 2013-11-27 パナソニック株式会社 実装構造体
US7960818B1 (en) * 2009-03-04 2011-06-14 Amkor Technology, Inc. Conformal shield on punch QFN semiconductor package
CN102074517B (zh) * 2010-12-03 2013-01-02 日月光封装测试(上海)有限公司 球栅阵列封装构造
JP5940257B2 (ja) * 2011-08-01 2016-06-29 株式会社三井ハイテック リードフレーム及びリードフレームの製造方法並びにこれを用いた半導体装置
JP2013069741A (ja) * 2011-09-21 2013-04-18 Renesas Electronics Corp リードフレーム、半導体装置、リードフレームの製造方法及び半導体装置の製造方法
JP5947107B2 (ja) * 2012-05-23 2016-07-06 ルネサスエレクトロニクス株式会社 半導体装置
JP6150469B2 (ja) * 2012-07-12 2017-06-21 株式会社三井ハイテック リードフレームの製造方法
JP6352009B2 (ja) 2013-04-16 2018-07-04 ローム株式会社 半導体装置
JP6634117B2 (ja) * 2013-04-16 2020-01-22 ローム株式会社 半導体装置
JP2013168669A (ja) * 2013-04-18 2013-08-29 Agere Systems Inc 改良型パドルを有するクワッド・フラット・ノーリード(qfn)集積回路(ic)パッケージおよびこのパッケージを設計する方法
US9741642B1 (en) * 2014-05-07 2017-08-22 UTAC Headquarters Pte. Ltd. Semiconductor package with partial plating on contact side surfaces
CN104157583B (zh) * 2014-08-28 2017-01-25 山东华芯半导体有限公司 一种芯片封装方法及模具
KR20170105476A (ko) * 2015-01-22 2017-09-19 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 그 제조 방법
CN104766843B (zh) * 2015-04-24 2017-10-10 南京晟芯半导体有限公司 一种可用smt工艺贴装的高功率半导体封装结构
JP2017147272A (ja) * 2016-02-15 2017-08-24 ローム株式会社 半導体装置およびその製造方法、ならびに、半導体装置の製造に使用されるリードフレーム中間体
DE112016006677B4 (de) * 2016-03-29 2021-12-16 Mitsubishi Electric Corporation Verfahren zum Herstellen einer mit Harz versiegelten Leistungs-Halbleitervorrichtung
CN109300835B (zh) * 2017-07-25 2021-04-09 北京北方华创微电子装备有限公司 一种晶片支撑结构、预热腔室和半导体处理设备
US10535812B2 (en) * 2017-09-04 2020-01-14 Rohm Co., Ltd. Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000307049A (ja) * 1999-04-23 2000-11-02 Matsushita Electronics Industry Corp リードフレームとそれを用いた樹脂封止型半導体装置およびその製造方法
JP2001156239A (ja) * 1999-11-25 2001-06-08 Matsushita Electronics Industry Corp 半導体装置及び半導体装置の製造方法
JP2003197846A (ja) * 2001-12-27 2003-07-11 Mitsui High Tec Inc リードフレームおよびこれを用いた半導体装置

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2002A (en) * 1841-03-12 Tor and planter for plowing
JPS61139052A (ja) 1984-12-11 1986-06-26 Matsushita Electric Ind Co Ltd 半導体集積回路部品
JPS61220361A (ja) 1985-03-26 1986-09-30 Matsushita Electric Ind Co Ltd 電子部品の捺印及びフレ−ム切断機
US5295297B1 (en) * 1986-11-25 1996-11-26 Hitachi Ltd Method of producing semiconductor memory
JPH06232195A (ja) 1993-01-28 1994-08-19 Rohm Co Ltd 半導体装置の製造方法およびリードフレーム
JPH07235630A (ja) 1994-02-25 1995-09-05 Matsushita Electron Corp リードフレーム
JP3155933B2 (ja) * 1996-03-29 2001-04-16 キヤノン株式会社 電子写真用光透過性被記録材及び加熱定着方法
JP3012816B2 (ja) 1996-10-22 2000-02-28 松下電子工業株式会社 樹脂封止型半導体装置およびその製造方法
JPH10242366A (ja) * 1997-02-24 1998-09-11 Ricoh Co Ltd 半導体装置
JP2915892B2 (ja) 1997-06-27 1999-07-05 松下電子工業株式会社 樹脂封止型半導体装置およびその製造方法
JP2951308B1 (ja) 1998-03-13 1999-09-20 松下電子工業株式会社 リードフレームの製造方法
JP2000036556A (ja) * 1998-07-17 2000-02-02 Matsushita Electronics Industry Corp 半導体装置の製造方法とその半導体装置
JP2000091488A (ja) 1998-09-08 2000-03-31 Dainippon Printing Co Ltd 樹脂封止型半導体装置とそれに用いられる回路部材
MY133357A (en) * 1999-06-30 2007-11-30 Hitachi Ltd A semiconductor device and a method of manufacturing the same
KR20010037247A (ko) * 1999-10-15 2001-05-07 마이클 디. 오브라이언 반도체패키지
JP2001127090A (ja) 1999-10-25 2001-05-11 Matsushita Electronics Industry Corp 樹脂封止型半導体装置の製造方法
JP2002091488A (ja) 2000-01-31 2002-03-27 Matsushita Electric Ind Co Ltd 車載ナビゲーション装置
JP3547704B2 (ja) 2000-06-22 2004-07-28 株式会社三井ハイテック リードフレーム及び半導体装置
JP2002026190A (ja) 2000-07-03 2002-01-25 Dainippon Printing Co Ltd 樹脂封止型半導体装置
JP4387566B2 (ja) 2000-07-05 2009-12-16 パナソニック株式会社 樹脂封止型半導体装置
JP3660861B2 (ja) * 2000-08-18 2005-06-15 株式会社ルネサステクノロジ 半導体装置の製造方法
JP4523138B2 (ja) 2000-10-06 2010-08-11 ローム株式会社 半導体装置およびそれに用いるリードフレーム
KR20020048572A (ko) * 2000-12-18 2002-06-24 정헌태 반도체 마킹 장비의 스트립 플리퍼 장치
US6700186B2 (en) * 2000-12-21 2004-03-02 Mitsui High-Tec, Inc. Lead frame for a semiconductor device, a semiconductor device made from the lead frame, and a method of making a semiconductor device
JP4547086B2 (ja) * 2000-12-25 2010-09-22 ルネサスエレクトロニクス株式会社 半導体装置
JP3895570B2 (ja) * 2000-12-28 2007-03-22 株式会社ルネサステクノロジ 半導体装置
US6828661B2 (en) * 2001-06-27 2004-12-07 Matsushita Electric Industrial Co., Ltd. Lead frame and a resin-sealed semiconductor device exhibiting improved resin balance, and a method for manufacturing the same
JP2003031753A (ja) 2001-07-19 2003-01-31 Sony Corp 半導体装置及びその製造方法
US6710432B1 (en) * 2001-11-02 2004-03-23 National Semiconductor Corporation Integrated circuit package with low inductance ground path and improved thermal capability
JP3773855B2 (ja) 2001-11-12 2006-05-10 三洋電機株式会社 リードフレーム
JP2003158234A (ja) 2001-11-21 2003-05-30 Hitachi Ltd 半導体装置及びその製造方法
JP4247871B2 (ja) * 2002-05-09 2009-04-02 株式会社三井ハイテック リードフレームおよび半導体装置
US6894376B1 (en) * 2003-06-09 2005-05-17 National Semiconductor Corporation Leadless microelectronic package and a method to maximize the die size in the package
JP2005159103A (ja) 2003-11-27 2005-06-16 Renesas Technology Corp 半導体装置およびその製造方法
US7351611B2 (en) * 2004-02-20 2008-04-01 Carsem (M) Sdn Bhd Method of making the mould for encapsulating a leadframe package

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000307049A (ja) * 1999-04-23 2000-11-02 Matsushita Electronics Industry Corp リードフレームとそれを用いた樹脂封止型半導体装置およびその製造方法
JP2001156239A (ja) * 1999-11-25 2001-06-08 Matsushita Electronics Industry Corp 半導体装置及び半導体装置の製造方法
JP2003197846A (ja) * 2001-12-27 2003-07-11 Mitsui High Tec Inc リードフレームおよびこれを用いた半導体装置

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US20050116327A1 (en) 2005-06-02
US10998288B2 (en) 2021-05-04
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US20100068852A1 (en) 2010-03-18
US20180047677A1 (en) 2018-02-15
US20080006916A1 (en) 2008-01-10
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US20100065951A1 (en) 2010-03-18
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US20110204502A1 (en) 2011-08-25
US10249595B2 (en) 2019-04-02
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US20130020691A1 (en) 2013-01-24
US9024419B2 (en) 2015-05-05
US7691677B2 (en) 2010-04-06
US9425165B2 (en) 2016-08-23
KR101277391B1 (ko) 2013-06-20
US7282396B2 (en) 2007-10-16
KR20110079799A (ko) 2011-07-08
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US20150235987A1 (en) 2015-08-20
US20090075427A1 (en) 2009-03-19
US7833833B2 (en) 2010-11-16
US20160351512A1 (en) 2016-12-01
KR101398311B1 (ko) 2014-05-27
KR101054602B1 (ko) 2011-08-05
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US8592961B2 (en) 2013-11-26
US20190198477A1 (en) 2019-06-27

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