KR101046556B1 - 단일 종단 감지 증폭기를 갖는 반도체 디바이스 - Google Patents

단일 종단 감지 증폭기를 갖는 반도체 디바이스 Download PDF

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Publication number
KR101046556B1
KR101046556B1 KR1020090022250A KR20090022250A KR101046556B1 KR 101046556 B1 KR101046556 B1 KR 101046556B1 KR 1020090022250 A KR1020090022250 A KR 1020090022250A KR 20090022250 A KR20090022250 A KR 20090022250A KR 101046556 B1 KR101046556 B1 KR 101046556B1
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South Korea
Prior art keywords
bit line
field effect
effect transistor
memory cell
potential
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Expired - Fee Related
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KR1020090022250A
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English (en)
Korean (ko)
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KR20090099490A (ko
Inventor
가즈히코 가지가야
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엘피다 메모리 가부시키가이샤
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0026—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
KR1020090022250A 2008-03-17 2009-03-16 단일 종단 감지 증폭기를 갖는 반도체 디바이스 Expired - Fee Related KR101046556B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2008-068162 2008-03-17
JP2008068162 2008-03-17
JP2009062364A JP5596296B2 (ja) 2008-03-17 2009-03-16 半導体装置
JPJP-P-2009-062364 2009-03-16

Publications (2)

Publication Number Publication Date
KR20090099490A KR20090099490A (ko) 2009-09-22
KR101046556B1 true KR101046556B1 (ko) 2011-07-05

Family

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Family Applications (1)

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KR1020090022250A Expired - Fee Related KR101046556B1 (ko) 2008-03-17 2009-03-16 단일 종단 감지 증폭기를 갖는 반도체 디바이스

Country Status (5)

Country Link
US (2) US8045360B2 (enrdf_load_stackoverflow)
JP (1) JP5596296B2 (enrdf_load_stackoverflow)
KR (1) KR101046556B1 (enrdf_load_stackoverflow)
CN (1) CN101540189B (enrdf_load_stackoverflow)
TW (1) TWI399754B (enrdf_load_stackoverflow)

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KR101046556B1 (ko) * 2008-03-17 2011-07-05 엘피다 메모리 가부시키가이샤 단일 종단 감지 증폭기를 갖는 반도체 디바이스
US8619483B2 (en) * 2009-08-27 2013-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Memory circuits, systems, and methods for accessing the memory circuits
JP5451281B2 (ja) 2009-09-16 2014-03-26 ピーエスフォー ルクスコ エスエイアールエル センスアンプ回路及びそれを備えた半導体装置
JP2012104165A (ja) * 2010-11-05 2012-05-31 Elpida Memory Inc 半導体装置
KR20120101838A (ko) 2011-03-07 2012-09-17 삼성전자주식회사 계층적 비트라인 구조를 갖는 반도체 메모리 장치
US20140140124A1 (en) * 2012-11-21 2014-05-22 Dong-seok Kang Resistive memory device having selective sensing operation and access control method thereof
US8934286B2 (en) 2013-01-23 2015-01-13 International Business Machines Corporation Complementary metal-oxide-semiconductor (CMOS) dynamic random access memory (DRAM) cell with sense amplifier
KR102003861B1 (ko) 2013-02-28 2019-10-01 에스케이하이닉스 주식회사 반도체 장치, 프로세서 및 시스템
US9093175B2 (en) 2013-03-27 2015-07-28 International Business Machines Corporation Signal margin centering for single-ended eDRAM sense amplifier
JP2015222610A (ja) * 2015-06-29 2015-12-10 スパンション エルエルシー 半導体メモリ
US9589604B1 (en) * 2015-09-17 2017-03-07 International Business Machines Corporation Single ended bitline current sense amplifier for SRAM applications
DE102017204670A1 (de) * 2017-03-21 2018-09-27 Robert Bosch Gmbh Sensoreinrichtung und Überwachungsverfahren
WO2019003045A1 (ja) * 2017-06-27 2019-01-03 株式会社半導体エネルギー研究所 記憶装置
WO2019073333A1 (ja) 2017-10-13 2019-04-18 株式会社半導体エネルギー研究所 記憶装置、電子部品、及び電子機器
TWI842855B (zh) * 2019-03-29 2024-05-21 日商半導體能源研究所股份有限公司 半導體裝置

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KR20080010360A (ko) * 2006-07-26 2008-01-30 에이저 시스템즈 인크 싱글 엔디드 감지 회로, 메모리 회로, 집적 회로, 및내장된 메모리를 포함하는 시스템

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KR101046556B1 (ko) * 2008-03-17 2011-07-05 엘피다 메모리 가부시키가이샤 단일 종단 감지 증폭기를 갖는 반도체 디바이스
KR101108906B1 (ko) * 2008-03-17 2012-02-06 엘피다 메모리 가부시키가이샤 단일-종단 감지 증폭기를 갖는 반도체 디바이스
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JP5518313B2 (ja) * 2008-08-29 2014-06-11 ピーエスフォー ルクスコ エスエイアールエル センスアンプ回路及び半導体記憶装置
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Publication number Priority date Publication date Assignee Title
US20070153569A1 (en) 2006-01-05 2007-07-05 Thomas Nirschl Read circuit for resistive memory
KR20080010360A (ko) * 2006-07-26 2008-01-30 에이저 시스템즈 인크 싱글 엔디드 감지 회로, 메모리 회로, 집적 회로, 및내장된 메모리를 포함하는 시스템

Also Published As

Publication number Publication date
KR20090099490A (ko) 2009-09-22
CN101540189A (zh) 2009-09-23
US20090257268A1 (en) 2009-10-15
TWI399754B (zh) 2013-06-21
TW201001433A (en) 2010-01-01
US20120008368A1 (en) 2012-01-12
US8310887B2 (en) 2012-11-13
JP2009259379A (ja) 2009-11-05
CN101540189B (zh) 2013-08-14
US8045360B2 (en) 2011-10-25
JP5596296B2 (ja) 2014-09-24

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