KR101046523B1 - 케미컬 산화막의 제거 방법 - Google Patents

케미컬 산화막의 제거 방법 Download PDF

Info

Publication number
KR101046523B1
KR101046523B1 KR1020057016676A KR20057016676A KR101046523B1 KR 101046523 B1 KR101046523 B1 KR 101046523B1 KR 1020057016676 A KR1020057016676 A KR 1020057016676A KR 20057016676 A KR20057016676 A KR 20057016676A KR 101046523 B1 KR101046523 B1 KR 101046523B1
Authority
KR
South Korea
Prior art keywords
oxide film
gas
chemical
chemical oxide
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020057016676A
Other languages
English (en)
Korean (ko)
Other versions
KR20060002805A (ko
Inventor
가즈히데 하세베
미쯔히로 오까다
다까시 지바
쥰 오가와
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20060002805A publication Critical patent/KR20060002805A/ko
Application granted granted Critical
Publication of KR101046523B1 publication Critical patent/KR101046523B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020057016676A 2003-04-22 2004-04-20 케미컬 산화막의 제거 방법 Expired - Fee Related KR101046523B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00117664 2003-04-22
JP2003117664 2003-04-22
PCT/JP2004/005643 WO2004095559A1 (ja) 2003-04-22 2004-04-20 シリコン酸化膜の除去方法及び処理装置

Publications (2)

Publication Number Publication Date
KR20060002805A KR20060002805A (ko) 2006-01-09
KR101046523B1 true KR101046523B1 (ko) 2011-07-04

Family

ID=33308046

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057016676A Expired - Fee Related KR101046523B1 (ko) 2003-04-22 2004-04-20 케미컬 산화막의 제거 방법

Country Status (5)

Country Link
US (1) US7611995B2 (enExample)
KR (1) KR101046523B1 (enExample)
CN (2) CN100377317C (enExample)
TW (1) TW200501254A (enExample)
WO (1) WO2004095559A1 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7705385B2 (en) * 2005-09-12 2010-04-27 International Business Machines Corporation Selective deposition of germanium spacers on nitride
WO2007049510A1 (ja) * 2005-10-27 2007-05-03 Tokyo Electron Limited 処理方法及び記録媒体
US8343280B2 (en) * 2006-03-28 2013-01-01 Tokyo Electron Limited Multi-zone substrate temperature control system and method of operating
US20070238301A1 (en) * 2006-03-28 2007-10-11 Cabral Stephen H Batch processing system and method for performing chemical oxide removal
US7718032B2 (en) 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using
JP4994724B2 (ja) * 2006-07-07 2012-08-08 株式会社東芝 成膜装置及び成膜方法
JP4939864B2 (ja) * 2006-07-25 2012-05-30 東京エレクトロン株式会社 ガス供給装置、ガス供給方法、薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置
JP5211464B2 (ja) * 2006-10-20 2013-06-12 東京エレクトロン株式会社 被処理体の酸化装置
US7786016B2 (en) * 2007-01-11 2010-08-31 Micron Technology, Inc. Methods of uniformly removing silicon oxide and a method of removing a sacrificial oxide
JP4776575B2 (ja) 2007-03-28 2011-09-21 株式会社東芝 表面処理方法、エッチング処理方法および電子デバイスの製造方法
TW200908129A (en) * 2007-06-22 2009-02-16 Ulvac Inc Method for protecting semiconductor wafer and process for producing semiconductor device
KR101330707B1 (ko) * 2007-07-19 2013-11-19 삼성전자주식회사 반도체 장치의 형성 방법
US8252194B2 (en) * 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
KR100870914B1 (ko) * 2008-06-03 2008-11-28 주식회사 테스 실리콘 산화막의 건식 식각 방법
JP5158068B2 (ja) * 2009-02-20 2013-03-06 東京エレクトロン株式会社 縦型熱処理装置及び熱処理方法
JP5520552B2 (ja) * 2009-09-11 2014-06-11 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
CN102569020B (zh) * 2010-12-10 2015-01-14 有研新材料股份有限公司 一种8英寸晶圆切口氧化膜去除方法和装置
GB2487716B (en) * 2011-01-24 2015-06-03 Memsstar Ltd Vapour Etch of Silicon Dioxide with Improved Selectivity
JP5661523B2 (ja) 2011-03-18 2015-01-28 東京エレクトロン株式会社 成膜方法及び成膜装置
JP5917861B2 (ja) 2011-08-30 2016-05-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
KR101707295B1 (ko) * 2012-05-23 2017-02-15 도쿄엘렉트론가부시키가이샤 산화물 에칭 방법
CN107574476A (zh) * 2013-08-09 2018-01-12 应用材料公司 于外延生长之前预清洁基板表面的方法和设备
JP6426489B2 (ja) * 2015-02-03 2018-11-21 東京エレクトロン株式会社 エッチング方法
US10622205B2 (en) * 2015-02-16 2020-04-14 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
WO2017176027A1 (ko) * 2016-04-05 2017-10-12 주식회사 테스 실리콘산화막의 선택적 식각 방법
JP6726610B2 (ja) * 2016-12-13 2020-07-22 東京エレクトロン株式会社 エッチング方法及び基板処理システム
JP2018170387A (ja) * 2017-03-29 2018-11-01 東京エレクトロン株式会社 成膜方法及び縦型熱処理装置
JP7038564B2 (ja) * 2018-02-22 2022-03-18 東京エレクトロン株式会社 膜形成方法及び基板処理装置
JP6860537B2 (ja) * 2018-09-25 2021-04-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ クリーニング方法、半導体装置の製造方法、基板処理装置、およびプログラム
JP2022036756A (ja) * 2020-08-24 2022-03-08 キオクシア株式会社 半導体装置
JP7565885B2 (ja) * 2021-07-27 2024-10-11 三菱電機株式会社 半導体装置の製造方法および半導体製造装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5030319A (en) * 1988-12-27 1991-07-09 Kabushiki Kaisha Toshiba Method of oxide etching with condensed plasma reaction product
JP2902012B2 (ja) 1989-10-27 1999-06-07 国際電気株式会社 低圧酸化装置
JP2853211B2 (ja) 1989-11-01 1999-02-03 富士通株式会社 半導体装置の製造方法
US5268069A (en) * 1991-10-28 1993-12-07 International Business Machines Corporation Safe method for etching silicon dioxide
JPH05326464A (ja) * 1992-05-15 1993-12-10 Dainippon Screen Mfg Co Ltd 基板表面の気相洗浄方法
JPH0697140A (ja) * 1992-09-14 1994-04-08 Toshiba Corp 半導体基板処理方法
US5282925A (en) 1992-11-09 1994-02-01 International Business Machines Corporation Device and method for accurate etching and removal of thin film
JP2833946B2 (ja) 1992-12-08 1998-12-09 日本電気株式会社 エッチング方法および装置
JPH06244153A (ja) * 1993-02-16 1994-09-02 Matsushita Electric Ind Co Ltd ドライエッチング方法
JPH08195381A (ja) * 1995-01-17 1996-07-30 Fujitsu Ltd 半導体装置の製造方法
JPH1140770A (ja) * 1997-07-18 1999-02-12 Nec Corp 半導体装置の製造方法および半導体製造装置
US6635185B2 (en) * 1997-12-31 2003-10-21 Alliedsignal Inc. Method of etching and cleaning using fluorinated carbonyl compounds
JP3436256B2 (ja) 2000-05-02 2003-08-11 東京エレクトロン株式会社 被処理体の酸化方法及び酸化装置
US6335261B1 (en) * 2000-05-31 2002-01-01 International Business Machines Corporation Directional CVD process with optimized etchback
US6926843B2 (en) * 2000-11-30 2005-08-09 International Business Machines Corporation Etching of hard masks
KR100520600B1 (ko) * 2003-02-17 2005-10-10 주식회사 하이닉스반도체 반도체소자의 캐패시터 제조방법

Also Published As

Publication number Publication date
WO2004095559A1 (ja) 2004-11-04
CN100533683C (zh) 2009-08-26
CN1777980A (zh) 2006-05-24
CN100377317C (zh) 2008-03-26
US20060216941A1 (en) 2006-09-28
TWI331364B (enExample) 2010-10-01
US7611995B2 (en) 2009-11-03
CN101131929A (zh) 2008-02-27
KR20060002805A (ko) 2006-01-09
TW200501254A (en) 2005-01-01

Similar Documents

Publication Publication Date Title
KR101046523B1 (ko) 케미컬 산화막의 제거 방법
KR101014062B1 (ko) 성막 방법 및 성막 장치
KR100861851B1 (ko) 실리콘 산화막 형성 방법 및 장치
US11335554B2 (en) Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
TW202013479A (zh) 蝕刻方法及蝕刻裝置
US12033852B2 (en) Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
KR102719353B1 (ko) 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
TWI436425B (zh) 改善選擇性氧化處理之氧化物成長速率的方法
US20250246427A1 (en) Processing apparatus, processing method, method of manufacturing semiconductor device, and recording medium
JP4281082B2 (ja) 堆積前の表面調整方法
US7105055B2 (en) In situ growth of oxide and silicon layers
JP4039385B2 (ja) ケミカル酸化膜の除去方法
KR20190101893A (ko) 고품질 에칭 저항성 갭필 유전체 막의 퇴적 및 리플로우를 위한 방법
JP2007516599A (ja) ゲルマニウム上の堆積前の表面調製
KR101139078B1 (ko) 반도체 처리용 성막 장치 및 그 사용 방법과, 컴퓨터로판독 가능한 매체
KR20080029846A (ko) 실리콘 산화막을 형성하기 위한 성막 방법 및 장치
JP2002176052A (ja) 被処理体の酸化方法及び酸化装置
JP4851647B2 (ja) 酸化層及びシリコン層のインサイチュウ成長
KR100935260B1 (ko) 피처리체의 산화 방법, 산화 장치 및 기억 매체
KR20050016682A (ko) 피처리체의 산화방법
JP2007528602A (ja) 高誘電率集積用のシリコンゲルマニウム表面層
KR20060042203A (ko) 피처리체의 산화 방법, 산화 장치 및 기억 매체
US20250379060A1 (en) Etching method, method of manufacturing semiconductor device, processing apparatus, and recording medium
JP4112591B2 (ja) 半導体装置の製造方法および基板処理装置
JP3552037B2 (ja) シリコン酸化膜の形成方法及び形成装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20140603

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20150601

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20160527

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20170530

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20180618

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20190618

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20220629

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20220629