TW200501254A - Method for removing silicon oxide film and processing apparatus - Google Patents

Method for removing silicon oxide film and processing apparatus

Info

Publication number
TW200501254A
TW200501254A TW093110984A TW93110984A TW200501254A TW 200501254 A TW200501254 A TW 200501254A TW 093110984 A TW093110984 A TW 093110984A TW 93110984 A TW93110984 A TW 93110984A TW 200501254 A TW200501254 A TW 200501254A
Authority
TW
Taiwan
Prior art keywords
oxide film
silicon oxide
gas
processing apparatus
removing silicon
Prior art date
Application number
TW093110984A
Other languages
English (en)
Chinese (zh)
Other versions
TWI331364B (enExample
Inventor
Kazuhide Hasebe
Mitsuhiro Okada
Takashi Chiba
Jun Ogawa
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200501254A publication Critical patent/TW200501254A/zh
Application granted granted Critical
Publication of TWI331364B publication Critical patent/TWI331364B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW093110984A 2003-04-22 2004-04-20 Method for removing silicon oxide film and processing apparatus TW200501254A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003117664 2003-04-22

Publications (2)

Publication Number Publication Date
TW200501254A true TW200501254A (en) 2005-01-01
TWI331364B TWI331364B (enExample) 2010-10-01

Family

ID=33308046

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093110984A TW200501254A (en) 2003-04-22 2004-04-20 Method for removing silicon oxide film and processing apparatus

Country Status (5)

Country Link
US (1) US7611995B2 (enExample)
KR (1) KR101046523B1 (enExample)
CN (2) CN100377317C (enExample)
TW (1) TW200501254A (enExample)
WO (1) WO2004095559A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI789705B (zh) * 2020-08-24 2023-01-11 日商鎧俠股份有限公司 半導體裝置

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US7705385B2 (en) * 2005-09-12 2010-04-27 International Business Machines Corporation Selective deposition of germanium spacers on nitride
JP4762998B2 (ja) * 2005-10-27 2011-08-31 東京エレクトロン株式会社 処理方法及び記録媒体
US20070238301A1 (en) * 2006-03-28 2007-10-11 Cabral Stephen H Batch processing system and method for performing chemical oxide removal
US8343280B2 (en) * 2006-03-28 2013-01-01 Tokyo Electron Limited Multi-zone substrate temperature control system and method of operating
US7718032B2 (en) 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using
JP4994724B2 (ja) * 2006-07-07 2012-08-08 株式会社東芝 成膜装置及び成膜方法
JP4939864B2 (ja) * 2006-07-25 2012-05-30 東京エレクトロン株式会社 ガス供給装置、ガス供給方法、薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置
JP5211464B2 (ja) * 2006-10-20 2013-06-12 東京エレクトロン株式会社 被処理体の酸化装置
US7786016B2 (en) * 2007-01-11 2010-08-31 Micron Technology, Inc. Methods of uniformly removing silicon oxide and a method of removing a sacrificial oxide
JP4776575B2 (ja) 2007-03-28 2011-09-21 株式会社東芝 表面処理方法、エッチング処理方法および電子デバイスの製造方法
JP5194008B2 (ja) * 2007-06-22 2013-05-08 株式会社アルバック 半導体ウェーハの保護方法及び半導体装置の製造方法
KR101330707B1 (ko) * 2007-07-19 2013-11-19 삼성전자주식회사 반도체 장치의 형성 방법
US8252194B2 (en) 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
KR100870914B1 (ko) * 2008-06-03 2008-11-28 주식회사 테스 실리콘 산화막의 건식 식각 방법
JP5158068B2 (ja) * 2009-02-20 2013-03-06 東京エレクトロン株式会社 縦型熱処理装置及び熱処理方法
JP5520552B2 (ja) * 2009-09-11 2014-06-11 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
CN102569020B (zh) * 2010-12-10 2015-01-14 有研新材料股份有限公司 一种8英寸晶圆切口氧化膜去除方法和装置
GB2487716B (en) * 2011-01-24 2015-06-03 Memsstar Ltd Vapour Etch of Silicon Dioxide with Improved Selectivity
JP5661523B2 (ja) * 2011-03-18 2015-01-28 東京エレクトロン株式会社 成膜方法及び成膜装置
JP5917861B2 (ja) 2011-08-30 2016-05-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
KR101707295B1 (ko) * 2012-05-23 2017-02-15 도쿄엘렉트론가부시키가이샤 산화물 에칭 방법
US9683308B2 (en) * 2013-08-09 2017-06-20 Applied Materials, Inc. Method and apparatus for precleaning a substrate surface prior to epitaxial growth
JP6426489B2 (ja) * 2015-02-03 2018-11-21 東京エレクトロン株式会社 エッチング方法
US10622205B2 (en) * 2015-02-16 2020-04-14 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
WO2017176027A1 (ko) * 2016-04-05 2017-10-12 주식회사 테스 실리콘산화막의 선택적 식각 방법
JP6726610B2 (ja) 2016-12-13 2020-07-22 東京エレクトロン株式会社 エッチング方法及び基板処理システム
JP2018170387A (ja) * 2017-03-29 2018-11-01 東京エレクトロン株式会社 成膜方法及び縦型熱処理装置
JP7038564B2 (ja) * 2018-02-22 2022-03-18 東京エレクトロン株式会社 膜形成方法及び基板処理装置
JP6860537B2 (ja) * 2018-09-25 2021-04-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ クリーニング方法、半導体装置の製造方法、基板処理装置、およびプログラム
JP7565885B2 (ja) * 2021-07-27 2024-10-11 三菱電機株式会社 半導体装置の製造方法および半導体製造装置

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JP2902012B2 (ja) 1989-10-27 1999-06-07 国際電気株式会社 低圧酸化装置
JP2853211B2 (ja) 1989-11-01 1999-02-03 富士通株式会社 半導体装置の製造方法
US5268069A (en) * 1991-10-28 1993-12-07 International Business Machines Corporation Safe method for etching silicon dioxide
JPH05326464A (ja) * 1992-05-15 1993-12-10 Dainippon Screen Mfg Co Ltd 基板表面の気相洗浄方法
JPH0697140A (ja) * 1992-09-14 1994-04-08 Toshiba Corp 半導体基板処理方法
US5282925A (en) 1992-11-09 1994-02-01 International Business Machines Corporation Device and method for accurate etching and removal of thin film
JP2833946B2 (ja) 1992-12-08 1998-12-09 日本電気株式会社 エッチング方法および装置
JPH06244153A (ja) * 1993-02-16 1994-09-02 Matsushita Electric Ind Co Ltd ドライエッチング方法
JPH08195381A (ja) * 1995-01-17 1996-07-30 Fujitsu Ltd 半導体装置の製造方法
JPH1140770A (ja) * 1997-07-18 1999-02-12 Nec Corp 半導体装置の製造方法および半導体製造装置
US6635185B2 (en) * 1997-12-31 2003-10-21 Alliedsignal Inc. Method of etching and cleaning using fluorinated carbonyl compounds
JP3436256B2 (ja) 2000-05-02 2003-08-11 東京エレクトロン株式会社 被処理体の酸化方法及び酸化装置
US6335261B1 (en) * 2000-05-31 2002-01-01 International Business Machines Corporation Directional CVD process with optimized etchback
US6926843B2 (en) * 2000-11-30 2005-08-09 International Business Machines Corporation Etching of hard masks
KR100520600B1 (ko) * 2003-02-17 2005-10-10 주식회사 하이닉스반도체 반도체소자의 캐패시터 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI789705B (zh) * 2020-08-24 2023-01-11 日商鎧俠股份有限公司 半導體裝置

Also Published As

Publication number Publication date
KR101046523B1 (ko) 2011-07-04
CN1777980A (zh) 2006-05-24
CN100533683C (zh) 2009-08-26
US20060216941A1 (en) 2006-09-28
CN101131929A (zh) 2008-02-27
KR20060002805A (ko) 2006-01-09
TWI331364B (enExample) 2010-10-01
WO2004095559A1 (ja) 2004-11-04
CN100377317C (zh) 2008-03-26
US7611995B2 (en) 2009-11-03

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MM4A Annulment or lapse of patent due to non-payment of fees