ATE281000T1 - Verfahren und gerät zur stabilisierung eines plasmas - Google Patents

Verfahren und gerät zur stabilisierung eines plasmas

Info

Publication number
ATE281000T1
ATE281000T1 AT00919057T AT00919057T ATE281000T1 AT E281000 T1 ATE281000 T1 AT E281000T1 AT 00919057 T AT00919057 T AT 00919057T AT 00919057 T AT00919057 T AT 00919057T AT E281000 T1 ATE281000 T1 AT E281000T1
Authority
AT
Austria
Prior art keywords
plasma
steps
chamber
impedance
workpiece
Prior art date
Application number
AT00919057T
Other languages
English (en)
Inventor
Jyoti Kiron Bhardwaj
Leslie Michael Lea
Edward Guibarra
Original Assignee
Surface Technology Systems Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB9908374.3A external-priority patent/GB9908374D0/en
Priority claimed from GBGB9914689.6A external-priority patent/GB9914689D0/en
Application filed by Surface Technology Systems Plc filed Critical Surface Technology Systems Plc
Application granted granted Critical
Publication of ATE281000T1 publication Critical patent/ATE281000T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
AT00919057T 1999-04-14 2000-04-12 Verfahren und gerät zur stabilisierung eines plasmas ATE281000T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9908374.3A GB9908374D0 (en) 1999-04-14 1999-04-14 Method and apparatus for stabilising a plasma
GBGB9914689.6A GB9914689D0 (en) 1999-06-24 1999-06-24 Method and apparatus for stabilising a plasma
PCT/GB2000/001383 WO2000062328A1 (en) 1999-04-14 2000-04-12 Method and apparatus for stabilising a plasma

Publications (1)

Publication Number Publication Date
ATE281000T1 true ATE281000T1 (de) 2004-11-15

Family

ID=26315409

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00919057T ATE281000T1 (de) 1999-04-14 2000-04-12 Verfahren und gerät zur stabilisierung eines plasmas

Country Status (7)

Country Link
US (1) US7306745B1 (de)
EP (1) EP1088329B1 (de)
JP (1) JP4865948B2 (de)
KR (1) KR100738141B1 (de)
AT (1) ATE281000T1 (de)
DE (1) DE60015270T2 (de)
WO (1) WO2000062328A1 (de)

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DE19927806A1 (de) 1999-06-18 2001-01-04 Bosch Gmbh Robert Vorrichtung und Verfahren zum Hochratenätzen eines Substrates mit einer Plasmaätzanlage und Vorrichtung und Verfahren zum Zünden eines Plasmas und Hochregeln oder Pulsen der Plasmaleistung
JP3555084B2 (ja) * 2001-06-11 2004-08-18 Ｎｅｃエレクトロニクス株式会社 半導体基板に対するプラズマ処理方法及び半導体基板のためのプラズマ処理装置
FR2842387B1 (fr) * 2002-07-11 2005-07-08 Cit Alcatel Chemisage chauffant pour reacteur de gravure plasma, procede de gravure pour sa mise en oeuvre
US6924235B2 (en) 2002-08-16 2005-08-02 Unaxis Usa Inc. Sidewall smoothing in high aspect ratio/deep etching using a discrete gas switching method
US7115520B2 (en) * 2003-04-07 2006-10-03 Unaxis Usa, Inc. Method and apparatus for process control in time division multiplexed (TDM) etch process
US7381650B2 (en) * 2003-04-07 2008-06-03 Unaxis Usa Inc. Method and apparatus for process control in time division multiplexed (TDM) etch processes
JP4512533B2 (ja) 2005-07-27 2010-07-28 住友精密工業株式会社 エッチング方法及びエッチング装置
WO2007031778A1 (en) * 2005-09-16 2007-03-22 Aviza Technology Limited A method of etching a feature in a silicone substrate
JP4145925B2 (ja) * 2006-01-31 2008-09-03 シャープ株式会社 プラズマエッチング方法
JP2008118017A (ja) * 2006-11-07 2008-05-22 Hitachi High-Technologies Corp プラズマ処理方法および処理装置
US8502455B2 (en) 2009-05-29 2013-08-06 Agilent Technologies, Inc. Atmospheric inductively coupled plasma generator
US8936703B2 (en) 2009-08-31 2015-01-20 Semicat, Inc. Methods to fabricate non-metal films on semiconductor substrates using physical vapor deposition
US8956516B2 (en) * 2009-08-31 2015-02-17 Semicat, Inc. System and apparatus to facilitate physical vapor deposition to modify non-metal films on semiconductor substrates
BR112012006823A2 (pt) * 2009-09-30 2019-09-24 Koninl Philips Electronics Nv disposição de concentração de gás, sistema de concentração de gás e bomba de gás para bombeamento de gás
JP6043046B2 (ja) * 2010-08-12 2016-12-14 東京エレクトロン株式会社 エッチングガスの供給方法及びエッチング装置
US8609548B2 (en) 2011-06-06 2013-12-17 Lam Research Corporation Method for providing high etch rate
US8828259B2 (en) * 2011-07-07 2014-09-09 Lam Research Corporation Methods for automatically determining capacitor values and systems thereof
DE102013014147B4 (de) * 2013-08-23 2017-02-16 Centrotherm Photovoltaics Ag Verfahren und vorrichtung zum detektieren einer plasmazündung
CN104425208B (zh) * 2013-09-11 2018-01-19 北京北方华创微电子装备有限公司 一种阻抗匹配方法
JP6334369B2 (ja) * 2014-11-11 2018-05-30 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP6603586B2 (ja) * 2016-01-19 2019-11-06 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN114188204B (zh) * 2020-09-14 2023-10-31 中微半导体设备(上海)股份有限公司 一种等离子体处理方法、射频发生器以及装置

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US3569777A (en) * 1969-07-28 1971-03-09 Int Plasma Corp Impedance matching network for plasma-generating apparatus
KR900007687B1 (ko) * 1986-10-17 1990-10-18 가부시기가이샤 히다찌세이사꾸쇼 플라즈마처리방법 및 장치
JP2918892B2 (ja) * 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
JPH03224226A (ja) * 1989-10-18 1991-10-03 Matsushita Electric Ind Co Ltd プラズマ加工方法およびそれに用いる装置
JPH05205898A (ja) * 1991-07-24 1993-08-13 Tokyo Electron Yamanashi Kk プラズマ処理装置
JP3067375B2 (ja) * 1992-03-27 2000-07-17 松下電器産業株式会社 プラズマ加工装置及びプラズマ加工方法
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US5414324A (en) * 1993-05-28 1995-05-09 The University Of Tennessee Research Corporation One atmosphere, uniform glow discharge plasma
JP3223661B2 (ja) * 1993-08-31 2001-10-29 ソニー株式会社 プラズマ堆積方法
JPH07161493A (ja) 1993-12-08 1995-06-23 Fujitsu Ltd プラズマ発生装置及び方法
US5424691A (en) * 1994-02-03 1995-06-13 Sadinsky; Samuel Apparatus and method for electronically controlled admittance matching network
US5688357A (en) * 1995-02-15 1997-11-18 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
US5793162A (en) 1995-12-29 1998-08-11 Lam Research Corporation Apparatus for controlling matching network of a vacuum plasma processor and memory for same
GB9616225D0 (en) * 1996-08-01 1996-09-11 Surface Tech Sys Ltd Method of surface treatment of semiconductor substrates
US5783282A (en) * 1996-10-07 1998-07-21 Micron Technology, Inc. Resputtering to achieve better step coverage of contact holes
US6174450B1 (en) 1997-04-16 2001-01-16 Lam Research Corporation Methods and apparatus for controlling ion energy and plasma density in a plasma processing system
JP3630982B2 (ja) * 1997-05-22 2005-03-23 キヤノン株式会社 プラズマ処理方法及びプラズマ処理装置
DE19730644C1 (de) * 1997-07-17 1998-11-19 Bosch Gmbh Robert Verfahren zum Erkennen des Übergangs unterschiedlicher Materialien in Halbleiterstrukturen bei einer anisotropen Tiefenätzung
US6187685B1 (en) * 1997-08-01 2001-02-13 Surface Technology Systems Limited Method and apparatus for etching a substrate
US6194038B1 (en) * 1998-03-20 2001-02-27 Applied Materials, Inc. Method for deposition of a conformal layer on a substrate

Also Published As

Publication number Publication date
DE60015270T2 (de) 2006-02-09
WO2000062328A1 (en) 2000-10-19
KR20010043839A (ko) 2001-05-25
JP4865948B2 (ja) 2012-02-01
EP1088329B1 (de) 2004-10-27
KR100738141B1 (ko) 2007-07-10
JP2002541677A (ja) 2002-12-03
EP1088329A1 (de) 2001-04-04
DE60015270D1 (de) 2004-12-02
US7306745B1 (en) 2007-12-11

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