KR101015035B1 - 배리스터 - Google Patents

배리스터 Download PDF

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Publication number
KR101015035B1
KR101015035B1 KR1020080069916A KR20080069916A KR101015035B1 KR 101015035 B1 KR101015035 B1 KR 101015035B1 KR 1020080069916 A KR1020080069916 A KR 1020080069916A KR 20080069916 A KR20080069916 A KR 20080069916A KR 101015035 B1 KR101015035 B1 KR 101015035B1
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KR
South Korea
Prior art keywords
varistor
phase
voltage
oxide
subcomponent
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KR1020080069916A
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English (en)
Korean (ko)
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KR20090009149A (ko
Inventor
다이 마쓰오카
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티디케이가부시기가이샤
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Publication of KR20090009149A publication Critical patent/KR20090009149A/ko
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Publication of KR101015035B1 publication Critical patent/KR101015035B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H01C7/112—ZnO type
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3418—Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Thermistors And Varistors (AREA)
KR1020080069916A 2007-07-19 2008-07-18 배리스터 Active KR101015035B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007188496A JP5088029B2 (ja) 2007-07-19 2007-07-19 バリスタ
JPJP-P-2007-00188496 2007-07-19

Publications (2)

Publication Number Publication Date
KR20090009149A KR20090009149A (ko) 2009-01-22
KR101015035B1 true KR101015035B1 (ko) 2011-02-16

Family

ID=40157614

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080069916A Active KR101015035B1 (ko) 2007-07-19 2008-07-18 배리스터

Country Status (6)

Country Link
US (1) US7994893B2 (https=)
JP (1) JP5088029B2 (https=)
KR (1) KR101015035B1 (https=)
CN (1) CN101350241B (https=)
DE (1) DE102008033664A1 (https=)
TW (1) TW200921714A (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200923979A (en) * 2007-11-20 2009-06-01 Inpaq Technology Co Ltd A composite chip varistor component and its manufacturing method
DE102009023846B4 (de) * 2009-02-03 2024-02-01 Tdk Electronics Ag Varistorkeramik, Vielschichtbauelement umfassend die Varistorkeramik, Herstellungsverfahren für die Varistorkeramik
JP5557060B2 (ja) * 2010-02-04 2014-07-23 株式会社村田製作所 Ｅｓｄ保護装置の製造方法
TW201221501A (en) * 2010-11-26 2012-06-01 Sfi Electronics Technology Inc Process for producing ZnO varistor particularly having internal electrode composed of pure silver and sintered at a lower sintering temperature
JP5995772B2 (ja) * 2013-04-02 2016-09-21 三菱電機株式会社 電圧非直線抵抗体、その製造方法およびそれを含む過電圧保護装置
KR20150109293A (ko) * 2014-03-19 2015-10-01 엔지케이 인슐레이터 엘티디 전압 비선형 저항 소자 및 그 제조 방법
KR101968992B1 (ko) * 2015-05-04 2019-04-15 주식회사 아모텍 바리스터 세라믹 및 이의 제조방법
KR101948164B1 (ko) * 2015-05-04 2019-04-22 주식회사 아모텍 바리스터 세라믹 및 이의 제조방법
WO2016208383A1 (ja) * 2015-06-22 2016-12-29 株式会社村田製作所 Ｅｓｄ保護装置およびｅｓｄ保護装置の製造方法
JP6747200B2 (ja) * 2016-09-09 2020-08-26 コニカミノルタ株式会社 画像処理システムおよび画像処理プログラム
JP7235492B2 (ja) * 2018-12-12 2023-03-08 Tdk株式会社 チップバリスタ
JP7411870B2 (ja) * 2019-01-16 2024-01-12 パナソニックＩｐマネジメント株式会社 バリスタ集合体
CN112110727B (zh) * 2020-09-22 2022-03-11 中国科学院新疆理化技术研究所 一种氟化物掺杂的高温负温度系数热敏电阻材料及制备方法
US11501900B2 (en) * 2020-11-11 2022-11-15 RIPD Intellectual Assets Ltd. Zinc oxide varistor ceramics
JP2023092246A (ja) * 2021-12-21 2023-07-03 パナソニックＩｐマネジメント株式会社 積層バリスタ
CN119528563B (zh) * 2024-10-31 2026-04-10 东华大学 一种低电压梯度氧化锌压敏陶瓷及其制备方法和应用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246207A (ja) * 2001-02-16 2002-08-30 Taiyo Yuden Co Ltd 電圧非直線抵抗体及び磁器組成物
JP2004146675A (ja) 2002-10-25 2004-05-20 Tdk Corp 電圧非直線性抵抗体磁器組成物、電子部品および積層チップバリスタ
KR100627961B1 (ko) 2002-08-20 2006-09-25 가부시키가이샤 무라타 세이사쿠쇼 배리스터
KR20070063453A (ko) * 2005-12-14 2007-06-19 티디케이가부시기가이샤 배리스터 및 배리스터의 제조방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6143403A (ja) 1984-08-08 1986-03-03 サンケン電気株式会社 酸化物電圧非直線抵抗体
EP0617436B1 (en) 1992-10-09 1998-03-11 TDK Corporation Resistance element with nonlinear voltage dependence and process for producing the same
JPH06340472A (ja) * 1993-05-27 1994-12-13 Tdk Corp セラミック組成物、バリスタ機能付き積層セラミックコンデンサ及びその製造方法
JP2940486B2 (ja) * 1996-04-23 1999-08-25 三菱電機株式会社 電圧非直線抵抗体、電圧非直線抵抗体の製造方法および避雷器
JP3878929B2 (ja) * 2003-08-29 2007-02-07 Ｔｄｋ株式会社 バリスタ及びバリスタの製造方法
JP4792900B2 (ja) * 2005-09-30 2011-10-12 株式会社村田製作所 バリスタ用磁器組成物、及び積層バリスタ
JP4710560B2 (ja) * 2005-11-15 2011-06-29 Ｔｄｋ株式会社 積層型チップバリスタの製造方法
JP4888260B2 (ja) * 2007-07-10 2012-02-29 Ｔｄｋ株式会社 電圧非直線性抵抗体磁器組成物、電子部品、及び積層チップバリスタ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246207A (ja) * 2001-02-16 2002-08-30 Taiyo Yuden Co Ltd 電圧非直線抵抗体及び磁器組成物
KR100627961B1 (ko) 2002-08-20 2006-09-25 가부시키가이샤 무라타 세이사쿠쇼 배리스터
JP2004146675A (ja) 2002-10-25 2004-05-20 Tdk Corp 電圧非直線性抵抗体磁器組成物、電子部品および積層チップバリスタ
KR20070063453A (ko) * 2005-12-14 2007-06-19 티디케이가부시기가이샤 배리스터 및 배리스터의 제조방법

Also Published As

Publication number Publication date
CN101350241B (zh) 2012-06-27
TWI374457B (https=) 2012-10-11
JP2009026954A (ja) 2009-02-05
DE102008033664A1 (de) 2009-01-29
US20090021341A1 (en) 2009-01-22
US7994893B2 (en) 2011-08-09
KR20090009149A (ko) 2009-01-22
JP5088029B2 (ja) 2012-12-05
CN101350241A (zh) 2009-01-21
TW200921714A (en) 2009-05-16

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