KR100944058B1 - 반도체 기억 장치 - Google Patents

반도체 기억 장치 Download PDF

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Publication number
KR100944058B1
KR100944058B1 KR1020080067061A KR20080067061A KR100944058B1 KR 100944058 B1 KR100944058 B1 KR 100944058B1 KR 1020080067061 A KR1020080067061 A KR 1020080067061A KR 20080067061 A KR20080067061 A KR 20080067061A KR 100944058 B1 KR100944058 B1 KR 100944058B1
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KR
South Korea
Prior art keywords
memory cell
circuit
line driver
bit line
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020080067061A
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English (en)
Korean (ko)
Other versions
KR20090009111A (ko
Inventor
가즈오 오노
리이찌로 다께무라
도모노리 세끼구찌
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
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Publication of KR20090009111A publication Critical patent/KR20090009111A/ko
Application granted granted Critical
Publication of KR100944058B1 publication Critical patent/KR100944058B1/ko
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G11C2013/0066—Verify correct writing whilst writing is in progress, e.g. by detecting onset or cessation of current flow in cell and using the detector output to terminate writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/52—Structure characterized by the electrode material, shape, etc.
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
KR1020080067061A 2007-07-19 2008-07-10 반도체 기억 장치 Expired - Fee Related KR100944058B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007188328A JP2009026382A (ja) 2007-07-19 2007-07-19 半導体記憶装置
JPJP-P-2007-00188328 2007-07-19

Publications (2)

Publication Number Publication Date
KR20090009111A KR20090009111A (ko) 2009-01-22
KR100944058B1 true KR100944058B1 (ko) 2010-02-24

Family

ID=40398066

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080067061A Expired - Fee Related KR100944058B1 (ko) 2007-07-19 2008-07-10 반도체 기억 장치

Country Status (4)

Country Link
US (2) US7835171B2 (enExample)
JP (1) JP2009026382A (enExample)
KR (1) KR100944058B1 (enExample)
TW (1) TW200917246A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10482959B2 (en) 2016-10-28 2019-11-19 SK Hynix Inc. Electronic device with a reference resistance adjustment block
US10566045B2 (en) 2016-10-24 2020-02-18 SK Hynix Inc. Electronic device includes resistive storage cells and reference resistance transistor, a resistance adjustment block to adjust the resistance value depending on a temperature and a data sensing block to sense the resistive value of the resistive storage cell and the reference transistor resistance value

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009026382A (ja) * 2007-07-19 2009-02-05 Hitachi Ltd 半導体記憶装置
US8189365B2 (en) * 2007-11-21 2012-05-29 Nec Corporation Semiconductor device configuration method
JP5161697B2 (ja) * 2008-08-08 2013-03-13 株式会社東芝 不揮発性半導体記憶装置
CN102171764B (zh) * 2008-10-06 2014-08-27 株式会社日立制作所 半导体器件
IT1392578B1 (it) * 2008-12-30 2012-03-09 St Microelectronics Rousset Metodo di programmazione multilivello di celle di memoria a cambiamento di fase utilizzante impulsi di reset adattativi
US8270199B2 (en) * 2009-04-03 2012-09-18 Sandisk 3D Llc Cross point non-volatile memory cell
WO2010125852A1 (ja) * 2009-04-27 2010-11-04 株式会社日立製作所 半導体装置
JP4705204B1 (ja) 2009-10-15 2011-06-22 パナソニック株式会社 抵抗変化型不揮発性記憶装置
US8878153B2 (en) * 2009-12-08 2014-11-04 Nec Corporation Variable resistance element having gradient of diffusion coefficient of ion conducting layer
JP2011253595A (ja) * 2010-06-03 2011-12-15 Toshiba Corp 不揮発性半導体記憶装置
JP2011258288A (ja) * 2010-06-10 2011-12-22 Toshiba Corp 半導体記憶装置
US8274812B2 (en) * 2010-06-14 2012-09-25 Crossbar, Inc. Write and erase scheme for resistive memory device
JP5521850B2 (ja) * 2010-07-21 2014-06-18 ソニー株式会社 抵抗変化型メモリデバイスおよびその駆動方法
US8259485B2 (en) * 2010-08-31 2012-09-04 Hewlett-Packard Development Company, L.P. Multilayer structures having memory elements with varied resistance of switching layers
JP5626529B2 (ja) * 2011-02-08 2014-11-19 ソニー株式会社 記憶装置およびその動作方法
JP5490961B2 (ja) * 2011-03-14 2014-05-14 パナソニック株式会社 不揮発性記憶素子の駆動方法及び不揮発性記憶装置
JP5694053B2 (ja) * 2011-05-26 2015-04-01 株式会社東芝 半導体記憶装置
US8619471B2 (en) 2011-07-27 2013-12-31 Micron Technology, Inc. Apparatuses and methods including memory array data line selection
CN103177761A (zh) * 2011-12-23 2013-06-26 北京大学 阻变存储设备及其操作方法
US9275731B1 (en) * 2012-10-05 2016-03-01 Marvell International Ltd. Systems and methods for increasing the read sensitivity of a resistive random access memory (RRAM)
US9042159B2 (en) 2012-10-15 2015-05-26 Marvell World Trade Ltd. Configuring resistive random access memory (RRAM) array for write operations
US9047945B2 (en) 2012-10-15 2015-06-02 Marvell World Trade Ltd. Systems and methods for reading resistive random access memory (RRAM) cells
US8885388B2 (en) 2012-10-24 2014-11-11 Marvell World Trade Ltd. Apparatus and method for reforming resistive memory cells
US9042162B2 (en) 2012-10-31 2015-05-26 Marvell World Trade Ltd. SRAM cells suitable for Fin field-effect transistor (FinFET) process
WO2014074362A1 (en) 2012-11-12 2014-05-15 Marvell World Trade Ltd. Concurrent use of sram cells with both nmos and pmos pass gates in a memory system
AT514477B1 (de) * 2013-07-05 2015-03-15 Nano Tecct Weiz Forschungsgmbh Speicher-Sensoranordnung mit einem Sensorelement und einem Speicher
KR102284643B1 (ko) * 2014-03-24 2021-07-30 고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠 저항 변화형 기억 소자의 데이터 기록 장치
JP6372203B2 (ja) 2014-07-07 2018-08-15 株式会社ソシオネクスト データ保持回路および保持データ復元方法
WO2016157719A1 (ja) * 2015-03-27 2016-10-06 パナソニックＩｐマネジメント株式会社 半導体記憶装置の書き換え方法及び半導体記憶装置
KR102401581B1 (ko) * 2015-10-26 2022-05-24 삼성전자주식회사 저항식 메모리 소자
CN112292727B (zh) * 2018-06-27 2024-05-24 北京时代全芯存储技术股份有限公司 记忆体驱动装置
JP2020205003A (ja) * 2019-06-19 2020-12-24 キオクシア株式会社 メモリシステム、メモリコントローラ、及び半導体記憶装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000076873A (ja) 1998-08-26 2000-03-14 Oki Micro Design:Kk メモリセルのしきい値電圧制御方法及び半導体記憶装置
JP2002329397A (ja) 2001-04-27 2002-11-15 Semiconductor Energy Lab Co Ltd 不揮発性メモリとそのベリファイ方法、及び半導体装置
JP2004234707A (ja) 2002-12-04 2004-08-19 Sharp Corp 半導体記憶装置及びメモリセルの書き込み並びに消去方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7184301B2 (en) * 2002-11-27 2007-02-27 Nec Corporation Magnetic memory cell and magnetic random access memory using the same
JP4804133B2 (ja) * 2005-12-06 2011-11-02 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP2009026382A (ja) * 2007-07-19 2009-02-05 Hitachi Ltd 半導体記憶装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000076873A (ja) 1998-08-26 2000-03-14 Oki Micro Design:Kk メモリセルのしきい値電圧制御方法及び半導体記憶装置
JP2002329397A (ja) 2001-04-27 2002-11-15 Semiconductor Energy Lab Co Ltd 不揮発性メモリとそのベリファイ方法、及び半導体装置
JP2004234707A (ja) 2002-12-04 2004-08-19 Sharp Corp 半導体記憶装置及びメモリセルの書き込み並びに消去方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10566045B2 (en) 2016-10-24 2020-02-18 SK Hynix Inc. Electronic device includes resistive storage cells and reference resistance transistor, a resistance adjustment block to adjust the resistance value depending on a temperature and a data sensing block to sense the resistive value of the resistive storage cell and the reference transistor resistance value
US10482959B2 (en) 2016-10-28 2019-11-19 SK Hynix Inc. Electronic device with a reference resistance adjustment block
US11211121B2 (en) 2016-10-28 2021-12-28 SK Hynix Inc. Resistive storage electronic device for adjusting voltage depending on temeperature

Also Published As

Publication number Publication date
US20110044092A1 (en) 2011-02-24
TW200917246A (en) 2009-04-16
US20090262568A1 (en) 2009-10-22
US7835171B2 (en) 2010-11-16
JP2009026382A (ja) 2009-02-05
KR20090009111A (ko) 2009-01-22

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