KR100923591B1 - 압전체 소자, 압전체 막 제조 방법, 액체 토출 헤드 및액체 토출 장치 - Google Patents
압전체 소자, 압전체 막 제조 방법, 액체 토출 헤드 및액체 토출 장치 Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
- B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
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- H—ELECTRICITY
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
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- H—ELECTRICITY
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- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
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- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
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- H—ELECTRICITY
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- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
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- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
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- H10N30/8548—Lead-based oxides
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- H10N30/01—Manufacture or treatment
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- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
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- H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
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- Ceramic Engineering (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
Abstract
Description
Claims (18)
- 압전체 막과, 기판상의 상기 압전체 막에 연결된 한 쌍의 전극을 구비한 압전체 소자이며,상기 압전체 막은 Pb(Zr, Ti)O3를 포함하고,Zr/(Zr+Ti) 조성비는 0.4 초과 0.7 미만이고,상기 압전체 막은 상기 기판의 표면에 대해 ±10°의 범위 내에서 적어도 정방정 a-도메인 및 c-도메인을 갖는 막이고,a-도메인 및 c-도메인 전체에 대한 c-도메인의 체적비는 20% 이상 60% 이하인 압전체 소자.
- 압전체 막과, 기판상의 상기 압전체 막에 연결된 한 쌍의 전극을 구비한 압전체 소자이며,상기 압전체 막은 Pb(Zr, Ti)O3를 포함하고,Zr/(Zr+Ti) 조성비는 0.4 초과 0.7 미만이고,상기 압전체 막은 상기 기판의 표면에 대해 ±10°의 범위 내에서 적어도 정방정 a-도메인 및 c-도메인을 갖는 막이고,a-도메인 및 c-도메인의 적어도 일부는, (N0N)평면(N은 정수)이 쌍정면인 쌍정의 거울상 관계에 있는 압전체 소자.
- 제2항에 있어서, a-도메인 및 c-도메인 전체에 대한 c-도메인의 체적비는 20% 이상 60% 이하인 압전체 소자.
- 제3항에 있어서, a-도메인 및 c-도메인 전체에 대한 c-도메인의 체적비는 25% 이상 60% 이하인 압전체 소자.
- 제1항에 있어서, Zr/(Zr+Ti) 조성비는 0.45 이상 0.65 미만인 압전체 소자.
- 제1항에 있어서, 상기 압전체 막은 정방정, 유사 입방정 및 마름모꼴 결정 중 임의의 하나를 갖는 압전체 소자.
- 제1항에 있어서, 상기 압전체 막은 에피택시얼 단결정 막 또는 단일축 배향 막인 압전체 소자.
- 압전체 막과, 상기 압전체 막에 연결된 한 쌍의 전극을 구비한 압전체 소자이며,상기 압전체 막은 Pb(Zr, Ti)O3를 포함하고,상기 압전체 막은 정방정 a-도메인 및 c-도메인을 갖는 막이고,도메인을 구성하는 [001]축방향길이 및 [100]축방향길이에 있어서, [001]축방향길이/[100]축방향길이비는 1.004 이상 1.040 이하인 압전체 소자.
- 제8항에 있어서, [001]축방향길이/[100]축방향길이비는 1.005 이상 1.036 이하인 압전체 소자.
- 제9항에 있어서, [001]축방향길이/[100]축방향길이비는 1.015 이상 1.029 이하인 압전체 소자.
- 제8항에 있어서, Zr/(Zr+Ti) 조성비는 0.4 초과 0.7 미만인 압전체 소자.
- 제8항에 있어서, a-도메인 및 c-도메인 전체에 대한 c-도메인의 체적비는 20% 이상 60% 이하인 압전체 소자.
- 제8항에 있어서, a-도메인 및 c-도메인 중 적어도 일부는, (N0N)평면(N은 정수)이 쌍정면인 쌍정의 거울상 관계에 있는 압전체 소자.
- 제1항에 있어서, a-도메인 및 c-도메인은 전기장을 인가할 때 변하는 압전체 소자.
- 제14항에 있어서, a-도메인 및 c-도메인 중 적어도 일부는, (N0N)평면(N은 정수)이 쌍정면인 쌍정의 거울상 관계에 있는 압전체 소자.
- 제1항에 있어서, 상기 기판은 그 표면상에 Si (100)평면과, Si (100)평면상에 버퍼층을 갖는 압전체 소자.
- 제1항, 제2항, 제8항 중 어느 한 항에 따른 압전체 소자를 포함하는 액체 토출 헤드이며,액체는 상기 압전체 소자를 채택함으로써 토출되는 액체 토출 헤드.
- 제17항에 따른 액체 토출 헤드와,상기 액체 토출 헤드를 탑재하기 위한 수단을 포함하는 액체 토출 장치.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2005-00012131 | 2005-01-19 | ||
JP2005012131 | 2005-01-19 | ||
JPJP-P-2005-00034956 | 2005-02-10 | ||
JP2005034956 | 2005-02-10 | ||
JPJP-P-2005-00257132 | 2005-09-05 | ||
JP2005257132 | 2005-09-05 |
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KR20070095420A KR20070095420A (ko) | 2007-09-28 |
KR100923591B1 true KR100923591B1 (ko) | 2009-10-23 |
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EP (1) | EP1846960B2 (ko) |
JP (1) | JP5164052B2 (ko) |
KR (1) | KR100923591B1 (ko) |
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Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007258389A (ja) * | 2006-03-23 | 2007-10-04 | Fujifilm Corp | 圧電膜とその製造方法、及び圧電素子 |
US7874649B2 (en) * | 2006-07-14 | 2011-01-25 | Canon Kabushiki Kaisha | Piezoelectric element, ink jet head and producing method for piezoelectric element |
JP5354876B2 (ja) * | 2006-07-14 | 2013-11-27 | キヤノン株式会社 | 圧電体の製造方法、圧電体素子及び液体吐出ヘッド |
JP5127268B2 (ja) * | 2007-03-02 | 2013-01-23 | キヤノン株式会社 | 圧電体、圧電体素子、圧電体素子を用いた液体吐出ヘッド及び液体吐出装置 |
JP4452752B2 (ja) * | 2008-09-30 | 2010-04-21 | 富士フイルム株式会社 | 鉛含有圧電膜およびその作製方法、鉛含有圧電膜を用いる圧電素子、ならびにこれを用いる液体吐出装置 |
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JPWO2011099316A1 (ja) * | 2010-02-12 | 2013-06-13 | コニカミノルタホールディングス株式会社 | インクジェットヘッドの製造方法 |
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JP2012143956A (ja) * | 2011-01-12 | 2012-08-02 | Seiko Epson Corp | ラインヘッド、ラインヘッドの製造方法、及び記録装置 |
JP6080465B2 (ja) * | 2011-10-26 | 2017-02-15 | キヤノン株式会社 | 圧電材料、圧電素子、圧電音響部品、および電子機器 |
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US10239312B2 (en) * | 2017-03-17 | 2019-03-26 | Ricoh Company, Ltd. | Liquid discharge head, liquid discharge device, and liquid discharge apparatus |
JP2019009413A (ja) * | 2017-06-23 | 2019-01-17 | 株式会社リコー | 電気機械変換素子、液体吐出ヘッド、液体吐出ユニット及び液体を吐出する装置 |
CN108597875B (zh) * | 2018-04-03 | 2020-10-30 | 湘潭大学 | 一种透明柔性全氧化物异质外延铁电薄膜及其制备方法 |
CN108987560B (zh) * | 2018-07-25 | 2022-02-01 | 湘潭大学 | 一种基于结晶学工程的具有多级多畴纳米结构的钙钛矿铁电薄膜及其制备方法 |
CN112470298B (zh) * | 2018-07-30 | 2024-05-28 | 株式会社村田制作所 | Mems器件 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1054460A2 (en) * | 1999-05-20 | 2000-11-22 | TDK Corporation | Thin film piezoelectric device for acoustic resonators |
WO2004068605A1 (en) | 2003-01-31 | 2004-08-12 | Canon Kabushiki Kaisha | Piezoelectric element |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3398962B2 (ja) * | 1991-05-09 | 2003-04-21 | 東陶機器株式会社 | 強誘電体磁器組成物 |
JP3104550B2 (ja) | 1994-10-17 | 2000-10-30 | 松下電器産業株式会社 | 圧電アクチュエータおよびその製造方法 |
US6080467A (en) * | 1995-06-26 | 2000-06-27 | 3M Innovative Properties Company | High efficiency optical devices |
JP4437178B2 (ja) | 2000-02-04 | 2010-03-24 | 国立大学法人東京工業大学 | 強誘電体材料薄膜の成膜方法とその用途 |
JP3796394B2 (ja) * | 2000-06-21 | 2006-07-12 | キヤノン株式会社 | 圧電素子の製造方法および液体噴射記録ヘッドの製造方法 |
JP3754897B2 (ja) * | 2001-02-09 | 2006-03-15 | キヤノン株式会社 | 半導体装置用基板およびsoi基板の製造方法 |
JP4492779B2 (ja) | 2001-09-21 | 2010-06-30 | 国立大学法人富山大学 | X線回折方法および中性子線回折方法 |
JP2004128492A (ja) * | 2002-09-13 | 2004-04-22 | Matsushita Electric Ind Co Ltd | 圧電体薄膜素子およびそれを用いたアクチュエータ、インクジェットヘッドならびにインクジェット記録装置 |
JP3828116B2 (ja) * | 2003-01-31 | 2006-10-04 | キヤノン株式会社 | 圧電体素子 |
JP4521751B2 (ja) * | 2003-03-26 | 2010-08-11 | 国立大学法人東京工業大学 | チタン酸ジルコニウム酸鉛系膜、誘電体素子、誘電体膜の製造方法 |
JP4698161B2 (ja) * | 2003-05-13 | 2011-06-08 | 独立行政法人科学技術振興機構 | 圧電材料とその製造方法 |
JP4717344B2 (ja) * | 2003-12-10 | 2011-07-06 | キヤノン株式会社 | 誘電体薄膜素子、圧電アクチュエータおよび液体吐出ヘッド |
US20070046153A1 (en) * | 2005-08-23 | 2007-03-01 | Canon Kabushiki Kaisha | Piezoelectric substrate, piezoelectric element, liquid discharge head and liquid discharge apparatus |
US7591543B2 (en) * | 2005-08-23 | 2009-09-22 | Canon Kabushiki Kaisha | Piezoelectric member, piezoelectric member element, liquid discharge head in use thereof, liquid discharge apparatus and method of manufacturing piezoelectric member |
US7528530B2 (en) | 2005-08-23 | 2009-05-05 | Canon Kabushiki Kaisha | Piezoelectric substance, piezoelectric substance element, liquid discharge head, liquid discharge device and method for producing piezoelectric substance |
US7998362B2 (en) * | 2005-08-23 | 2011-08-16 | Canon Kabushiki Kaisha | Piezoelectric substance, piezoelectric element, liquid discharge head using piezoelectric element, liquid discharge apparatus, and production method of piezoelectric element |
US7521845B2 (en) * | 2005-08-23 | 2009-04-21 | Canon Kabushiki Kaisha | Piezoelectric substance, piezoelectric element, liquid discharge head using piezoelectric element, and liquid discharge apparatus |
US7874649B2 (en) * | 2006-07-14 | 2011-01-25 | Canon Kabushiki Kaisha | Piezoelectric element, ink jet head and producing method for piezoelectric element |
JP4314498B2 (ja) * | 2007-02-28 | 2009-08-19 | セイコーエプソン株式会社 | 圧電素子、液体噴射ヘッド、およびプリンタ |
JP5127268B2 (ja) * | 2007-03-02 | 2013-01-23 | キヤノン株式会社 | 圧電体、圧電体素子、圧電体素子を用いた液体吐出ヘッド及び液体吐出装置 |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1054460A2 (en) * | 1999-05-20 | 2000-11-22 | TDK Corporation | Thin film piezoelectric device for acoustic resonators |
WO2004068605A1 (en) | 2003-01-31 | 2004-08-12 | Canon Kabushiki Kaisha | Piezoelectric element |
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Publication number | Publication date |
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JP5164052B2 (ja) | 2013-03-13 |
CN101728478A (zh) | 2010-06-09 |
CN101107724B (zh) | 2010-07-07 |
US7857431B2 (en) | 2010-12-28 |
EP1846960B1 (en) | 2014-05-07 |
JP2007096248A (ja) | 2007-04-12 |
KR20070095420A (ko) | 2007-09-28 |
US20090128608A1 (en) | 2009-05-21 |
EP1846960A4 (en) | 2011-12-07 |
CN101728478B (zh) | 2011-07-20 |
WO2006078041A1 (en) | 2006-07-27 |
EP1846960A1 (en) | 2007-10-24 |
EP1846960B2 (en) | 2017-07-05 |
CN101107724A (zh) | 2008-01-16 |
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