KR100919081B1 - 절연 기판 상에 형성된 전계 효과 트랜지스터 - Google Patents

절연 기판 상에 형성된 전계 효과 트랜지스터

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Publication number
KR100919081B1
KR100919081B1 KR1020020051214A KR20020051214A KR100919081B1 KR 100919081 B1 KR100919081 B1 KR 100919081B1 KR 1020020051214 A KR1020020051214 A KR 1020020051214A KR 20020051214 A KR20020051214 A KR 20020051214A KR 100919081 B1 KR100919081 B1 KR 100919081B1
Authority
KR
South Korea
Prior art keywords
region
regions
thin film
gate
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020020051214A
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English (en)
Korean (ko)
Other versions
KR20030019179A (ko
Inventor
하야시유타카
하세가와히사시
다카스히로아키
오사나이준
Original Assignee
세이코 인스트루 가부시키가이샤
하야시 유타카
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세이코 인스트루 가부시키가이샤, 하야시 유타카 filed Critical 세이코 인스트루 가부시키가이샤
Publication of KR20030019179A publication Critical patent/KR20030019179A/ko
Application granted granted Critical
Publication of KR100919081B1 publication Critical patent/KR100919081B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H10D30/6711—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect by using electrodes contacting the supplementary regions or layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs

Landscapes

  • Thin Film Transistor (AREA)
KR1020020051214A 2001-08-28 2002-08-28 절연 기판 상에 형성된 전계 효과 트랜지스터 Expired - Fee Related KR100919081B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001258334 2001-08-28
JPJP-P-2001-00258334 2001-08-28
JPJP-P-2001-00276805 2001-09-12
JP2001276805A JP5001494B2 (ja) 2001-08-28 2001-09-12 絶縁性基板上に形成された電界効果トランジスタ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020070085014A Division KR100922914B1 (ko) 2001-08-28 2007-08-23 절연 기판 상에 형성된 전계 효과 트랜지스터

Publications (2)

Publication Number Publication Date
KR20030019179A KR20030019179A (ko) 2003-03-06
KR100919081B1 true KR100919081B1 (ko) 2009-09-28

Family

ID=26621140

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020020051214A Expired - Fee Related KR100919081B1 (ko) 2001-08-28 2002-08-28 절연 기판 상에 형성된 전계 효과 트랜지스터
KR1020070085014A Expired - Fee Related KR100922914B1 (ko) 2001-08-28 2007-08-23 절연 기판 상에 형성된 전계 효과 트랜지스터

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020070085014A Expired - Fee Related KR100922914B1 (ko) 2001-08-28 2007-08-23 절연 기판 상에 형성된 전계 효과 트랜지스터

Country Status (5)

Country Link
US (1) US7282763B2 (enExample)
JP (1) JP5001494B2 (enExample)
KR (2) KR100919081B1 (enExample)
CN (1) CN1266750C (enExample)
TW (1) TW556317B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100542986B1 (ko) 2003-04-29 2006-01-20 삼성에스디아이 주식회사 박막 트랜지스터, 상기 박막 트랜지스터 제조 방법 및 이를 이용한 표시장치
KR100543004B1 (ko) * 2003-09-18 2006-01-20 삼성에스디아이 주식회사 평판표시장치
AU2004311154B2 (en) * 2003-11-18 2011-04-07 Board Of Regents For The Oklahoma Agricultural And Mechanical Colleges Acting For And On Behalf Of The Oklahoma State University High-temperature devices on insulator substrates
US7045873B2 (en) * 2003-12-08 2006-05-16 International Business Machines Corporation Dynamic threshold voltage MOSFET on SOI
US7084462B1 (en) 2005-04-15 2006-08-01 International Business Machines Corporation Parallel field effect transistor structure having a body contact
KR100741976B1 (ko) 2005-08-25 2007-07-23 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조 방법
KR100878284B1 (ko) 2007-03-09 2009-01-12 삼성모바일디스플레이주식회사 박막트랜지스터와 그 제조 방법 및 이를 구비한유기전계발광표시장치
DE102007012380A1 (de) * 2007-03-14 2008-09-18 Austriamicrosystems Ag MOSFET mit Kanalanschluss und Verfahren zur Herstellung eines MOSFETs mit Kanalanschluss
US7652339B2 (en) * 2007-04-06 2010-01-26 Xerox Corporation Ambipolar transistor design
US8450799B2 (en) * 2007-10-22 2013-05-28 Seiko Instruments Inc. Field effect transistor formed on an insulating substrate and integrated circuit thereof
US7939865B2 (en) * 2009-01-22 2011-05-10 Honeywell International Inc. Metal semiconductor field effect transistor (MESFET) silicon-on-insulator structure having partial trench spacers
JP2011009579A (ja) * 2009-06-26 2011-01-13 Seiko Instruments Inc 絶縁性基板上の電界効果トランジスタおよびその集積回路

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04252075A (ja) * 1991-01-28 1992-09-08 Nec Corp 半導体装置およびその製造方法
JPH0982969A (ja) * 1995-09-12 1997-03-28 Toshiba Corp 薄膜トランジスタおよび液晶表示装置
JPH09283752A (ja) * 1996-04-12 1997-10-31 Hitachi Ltd Ｍｉｓ型半導体装置
JPH10256562A (ja) * 1997-03-14 1998-09-25 Matsushita Electron Corp 電界効果トランジスタおよびそれを用いた電力増幅器
JP2000031289A (ja) * 1998-07-08 2000-01-28 Oki Electric Ind Co Ltd 半導体集積回路装置

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
FR2461360A1 (fr) * 1979-07-10 1981-01-30 Thomson Csf Procede de fabrication d'un transistor a effet de champ du type dmos a fonctionnement vertical et transistor obtenu par ce procede
JPS61278164A (ja) * 1985-06-03 1986-12-09 Hitachi Ltd 双方向型薄膜半導体装置
EP0654829A1 (en) * 1993-11-12 1995-05-24 STMicroelectronics, Inc. Increased density MOS-gated double diffused semiconductor devices
JP3364559B2 (ja) * 1995-10-11 2003-01-08 三菱電機株式会社 半導体装置
TW417256B (en) * 1997-01-31 2001-01-01 Seiko Epson Corp Semiconductor MOS device and its manufacturing method
JP3216591B2 (ja) * 1997-10-29 2001-10-09 日本電気株式会社 電界効果型トランジスタ
JP3463593B2 (ja) * 1999-03-01 2003-11-05 日本電気株式会社 電界効果型トランジスタ及びその製造方法
JP2000332250A (ja) * 1999-05-18 2000-11-30 Sony Corp 半導体装置およびその製造方法
JP3573056B2 (ja) * 1999-07-16 2004-10-06 セイコーエプソン株式会社 半導体装置、半導体ゲートアレイおよび電気光学装置および電子機器
US6441434B1 (en) * 2000-03-31 2002-08-27 Advanced Micro Devices, Inc. Semiconductor-on-insulator body-source contact and method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04252075A (ja) * 1991-01-28 1992-09-08 Nec Corp 半導体装置およびその製造方法
JPH0982969A (ja) * 1995-09-12 1997-03-28 Toshiba Corp 薄膜トランジスタおよび液晶表示装置
JPH09283752A (ja) * 1996-04-12 1997-10-31 Hitachi Ltd Ｍｉｓ型半導体装置
JPH10256562A (ja) * 1997-03-14 1998-09-25 Matsushita Electron Corp 電界効果トランジスタおよびそれを用いた電力増幅器
JP2000031289A (ja) * 1998-07-08 2000-01-28 Oki Electric Ind Co Ltd 半導体集積回路装置

Also Published As

Publication number Publication date
KR20070091259A (ko) 2007-09-10
US7282763B2 (en) 2007-10-16
KR100922914B1 (ko) 2009-10-22
TW556317B (en) 2003-10-01
US20030052373A1 (en) 2003-03-20
JP5001494B2 (ja) 2012-08-15
CN1407609A (zh) 2003-04-02
CN1266750C (zh) 2006-07-26
KR20030019179A (ko) 2003-03-06
JP2003152184A (ja) 2003-05-23

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