CN1266750C - 在绝缘衬底上形成的场效应晶体管以及集成电路 - Google Patents

在绝缘衬底上形成的场效应晶体管以及集成电路 Download PDF

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Publication number
CN1266750C
CN1266750C CNB021443785A CN02144378A CN1266750C CN 1266750 C CN1266750 C CN 1266750C CN B021443785 A CNB021443785 A CN B021443785A CN 02144378 A CN02144378 A CN 02144378A CN 1266750 C CN1266750 C CN 1266750C
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CN
China
Prior art keywords
region
field effect
insulating substrate
effect transistor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021443785A
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English (en)
Chinese (zh)
Other versions
CN1407609A (zh
Inventor
林丰
长谷川尚
鹰巢博昭
小山内润
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lin Feng
Ablic Inc
Original Assignee
Seiko Instruments Inc
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Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Publication of CN1407609A publication Critical patent/CN1407609A/zh
Application granted granted Critical
Publication of CN1266750C publication Critical patent/CN1266750C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H10D30/6711—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect by using electrodes contacting the supplementary regions or layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs

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  • Thin Film Transistor (AREA)
CNB021443785A 2001-08-28 2002-08-28 在绝缘衬底上形成的场效应晶体管以及集成电路 Expired - Fee Related CN1266750C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP258334/01 2001-08-28
JP2001258334 2001-08-28
JP258334/2001 2001-08-28
JP276805/01 2001-09-12
JP276805/2001 2001-09-12
JP2001276805A JP5001494B2 (ja) 2001-08-28 2001-09-12 絶縁性基板上に形成された電界効果トランジスタ

Publications (2)

Publication Number Publication Date
CN1407609A CN1407609A (zh) 2003-04-02
CN1266750C true CN1266750C (zh) 2006-07-26

Family

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Family Applications (1)

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CNB021443785A Expired - Fee Related CN1266750C (zh) 2001-08-28 2002-08-28 在绝缘衬底上形成的场效应晶体管以及集成电路

Country Status (5)

Country Link
US (1) US7282763B2 (enExample)
JP (1) JP5001494B2 (enExample)
KR (2) KR100919081B1 (enExample)
CN (1) CN1266750C (enExample)
TW (1) TW556317B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100542986B1 (ko) 2003-04-29 2006-01-20 삼성에스디아이 주식회사 박막 트랜지스터, 상기 박막 트랜지스터 제조 방법 및 이를 이용한 표시장치
KR100543004B1 (ko) * 2003-09-18 2006-01-20 삼성에스디아이 주식회사 평판표시장치
WO2005050712A2 (en) * 2003-11-18 2005-06-02 Halliburton Energy Services, Inc. High-temperature memory systems
US7045873B2 (en) * 2003-12-08 2006-05-16 International Business Machines Corporation Dynamic threshold voltage MOSFET on SOI
US7084462B1 (en) * 2005-04-15 2006-08-01 International Business Machines Corporation Parallel field effect transistor structure having a body contact
KR100741976B1 (ko) 2005-08-25 2007-07-23 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조 방법
KR100878284B1 (ko) 2007-03-09 2009-01-12 삼성모바일디스플레이주식회사 박막트랜지스터와 그 제조 방법 및 이를 구비한유기전계발광표시장치
DE102007012380A1 (de) * 2007-03-14 2008-09-18 Austriamicrosystems Ag MOSFET mit Kanalanschluss und Verfahren zur Herstellung eines MOSFETs mit Kanalanschluss
US7652339B2 (en) * 2007-04-06 2010-01-26 Xerox Corporation Ambipolar transistor design
US8450799B2 (en) * 2007-10-22 2013-05-28 Seiko Instruments Inc. Field effect transistor formed on an insulating substrate and integrated circuit thereof
US7939865B2 (en) * 2009-01-22 2011-05-10 Honeywell International Inc. Metal semiconductor field effect transistor (MESFET) silicon-on-insulator structure having partial trench spacers
JP2011009579A (ja) * 2009-06-26 2011-01-13 Seiko Instruments Inc 絶縁性基板上の電界効果トランジスタおよびその集積回路

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2461360A1 (fr) * 1979-07-10 1981-01-30 Thomson Csf Procede de fabrication d'un transistor a effet de champ du type dmos a fonctionnement vertical et transistor obtenu par ce procede
JPS61278164A (ja) * 1985-06-03 1986-12-09 Hitachi Ltd 双方向型薄膜半導体装置
JPH04252075A (ja) * 1991-01-28 1992-09-08 Nec Corp 半導体装置およびその製造方法
EP0654829A1 (en) * 1993-11-12 1995-05-24 STMicroelectronics, Inc. Increased density MOS-gated double diffused semiconductor devices
JPH0982969A (ja) * 1995-09-12 1997-03-28 Toshiba Corp 薄膜トランジスタおよび液晶表示装置
JP3364559B2 (ja) * 1995-10-11 2003-01-08 三菱電機株式会社 半導体装置
JPH09283752A (ja) * 1996-04-12 1997-10-31 Hitachi Ltd Ｍｉｓ型半導体装置
TW417256B (en) * 1997-01-31 2001-01-01 Seiko Epson Corp Semiconductor MOS device and its manufacturing method
JP3379376B2 (ja) * 1997-03-14 2003-02-24 松下電器産業株式会社 電界効果トランジスタおよびそれを用いた電力増幅器
JP3216591B2 (ja) * 1997-10-29 2001-10-09 日本電気株式会社 電界効果型トランジスタ
JP2000031289A (ja) * 1998-07-08 2000-01-28 Oki Electric Ind Co Ltd 半導体集積回路装置
JP3463593B2 (ja) * 1999-03-01 2003-11-05 日本電気株式会社 電界効果型トランジスタ及びその製造方法
JP2000332250A (ja) * 1999-05-18 2000-11-30 Sony Corp 半導体装置およびその製造方法
JP3573056B2 (ja) * 1999-07-16 2004-10-06 セイコーエプソン株式会社 半導体装置、半導体ゲートアレイおよび電気光学装置および電子機器
US6441434B1 (en) * 2000-03-31 2002-08-27 Advanced Micro Devices, Inc. Semiconductor-on-insulator body-source contact and method

Also Published As

Publication number Publication date
JP5001494B2 (ja) 2012-08-15
KR100919081B1 (ko) 2009-09-28
US7282763B2 (en) 2007-10-16
KR20030019179A (ko) 2003-03-06
JP2003152184A (ja) 2003-05-23
KR20070091259A (ko) 2007-09-10
TW556317B (en) 2003-10-01
KR100922914B1 (ko) 2009-10-22
CN1407609A (zh) 2003-04-02
US20030052373A1 (en) 2003-03-20

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GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20160406

Address after: Chiba County, Japan

Patentee after: DynaFine Semiconductor Co.,Ltd.

Patentee after: Lin Feng

Address before: Chiba County, Japan

Patentee before: Seiko Instruments Inc.

Patentee before: Lin Feng

CP01 Change in the name or title of a patent holder

Address after: Chiba County, Japan

Co-patentee after: Lin Feng

Patentee after: ABLIC Inc.

Address before: Chiba County, Japan

Co-patentee before: Lin Feng

Patentee before: DynaFine Semiconductor Co.,Ltd.

CP01 Change in the name or title of a patent holder
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060726

Termination date: 20210828

CF01 Termination of patent right due to non-payment of annual fee