KR100894300B1 - 드라이에칭방법 - Google Patents

드라이에칭방법 Download PDF

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Publication number
KR100894300B1
KR100894300B1 KR1020060078748A KR20060078748A KR100894300B1 KR 100894300 B1 KR100894300 B1 KR 100894300B1 KR 1020060078748 A KR1020060078748 A KR 1020060078748A KR 20060078748 A KR20060078748 A KR 20060078748A KR 100894300 B1 KR100894300 B1 KR 100894300B1
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KR
South Korea
Prior art keywords
etching
gas
target material
mask pattern
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020060078748A
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English (en)
Korean (ko)
Other versions
KR20070090063A (ko
Inventor
사토시 우네
마사미치 사카구치
겐이치 구와바라
도모요시 이치마루
Original Assignee
가부시키가이샤 히다치 하이테크놀로지즈
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Publication date
Application filed by 가부시키가이샤 히다치 하이테크놀로지즈 filed Critical 가부시키가이샤 히다치 하이테크놀로지즈
Publication of KR20070090063A publication Critical patent/KR20070090063A/ko
Application granted granted Critical
Publication of KR100894300B1 publication Critical patent/KR100894300B1/ko
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01326—Aspects related to lithography, isolation or planarisation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4088—Processes for improving the resolution of the masks

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020060078748A 2006-03-01 2006-08-21 드라이에칭방법 Expired - Fee Related KR100894300B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00054914 2006-03-01
JP2006054914A JP4865361B2 (ja) 2006-03-01 2006-03-01 ドライエッチング方法

Publications (2)

Publication Number Publication Date
KR20070090063A KR20070090063A (ko) 2007-09-05
KR100894300B1 true KR100894300B1 (ko) 2009-04-24

Family

ID=38471971

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060078748A Expired - Fee Related KR100894300B1 (ko) 2006-03-01 2006-08-21 드라이에칭방법

Country Status (4)

Country Link
US (2) US20070207618A1 (https=)
JP (1) JP4865361B2 (https=)
KR (1) KR100894300B1 (https=)
TW (1) TW200735208A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013258244A (ja) 2012-06-12 2013-12-26 Tokyo Electron Ltd エッチング方法及びプラズマ処理装置
JP2014003085A (ja) * 2012-06-15 2014-01-09 Tokyo Electron Ltd プラズマエッチング方法及びプラズマ処理装置
CN104425228B (zh) * 2013-08-28 2017-06-16 中芯国际集成电路制造(上海)有限公司 多晶硅栅极的形成方法
JP7478059B2 (ja) * 2020-08-05 2024-05-02 株式会社アルバック シリコンのドライエッチング方法
WO2025027769A1 (ja) 2023-07-31 2025-02-06 株式会社日立ハイテク プラズマ処理方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010003257A (ko) 1999-06-22 2001-01-15 김영환 반도체소자의 제조방법
KR20010083476A (ko) 2000-02-15 2001-09-01 박종섭 미세패턴 형성방법
KR200291154Y1 (ko) * 2002-07-09 2002-10-11 박성준 전기ㆍ전자기기의 전선 정리용 기구
US6762130B2 (en) 2002-05-31 2004-07-13 Texas Instruments Incorporated Method of photolithographically forming extremely narrow transistor gate elements

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
JPS56100421A (en) * 1980-01-17 1981-08-12 Toshiba Corp Plasma etching method
JPS56144542A (en) * 1980-03-17 1981-11-10 Ibm Method of selectively reactively ion etching polycrystalline silicon for monocrsytalline silicon
EP0338102B1 (de) * 1988-04-19 1993-03-10 International Business Machines Corporation Verfahren zur Herstellung von integrierten Halbleiterstrukturen welche Feldeffekttransistoren mit Kanallängen im Submikrometerbereich enthalten
JPH07263415A (ja) * 1994-03-18 1995-10-13 Fujitsu Ltd 半導体装置の製造方法
JP3438313B2 (ja) * 1994-05-12 2003-08-18 富士通株式会社 パターン形成方法
KR100434133B1 (ko) 1995-07-14 2004-08-09 텍사스 인스트루먼츠 인코포레이티드 중간층리쏘그래피
JP2935346B2 (ja) * 1996-07-30 1999-08-16 日本電気株式会社 半導体装置およびその製造方法
US5818110A (en) * 1996-11-22 1998-10-06 International Business Machines Corporation Integrated circuit chip wiring structure with crossover capability and method of manufacturing the same
KR100291585B1 (ko) * 1997-07-25 2001-11-30 윤종용 반도체장치의금속막식각방법
JP2001035808A (ja) * 1999-07-22 2001-02-09 Semiconductor Energy Lab Co Ltd 配線およびその作製方法、この配線を備えた半導体装置、ドライエッチング方法
TW452971B (en) 1999-12-28 2001-09-01 Promos Technologies Inc Manufacturing method of bottle-shaped deep trench
JP2002151470A (ja) * 2000-11-09 2002-05-24 Mitsubishi Electric Corp ハードマスクの形成方法および半導体装置の製造方法
JP2002343798A (ja) * 2001-05-18 2002-11-29 Mitsubishi Electric Corp 配線層のドライエッチング方法、半導体装置の製造方法および該方法によって得られた半導体装置
JP4257051B2 (ja) * 2001-08-10 2009-04-22 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2003163349A (ja) * 2001-11-28 2003-06-06 Mitsubishi Electric Corp 半導体装置の製造方法
US6900139B1 (en) * 2002-04-30 2005-05-31 Advanced Micro Devices, Inc. Method for photoresist trim endpoint detection

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010003257A (ko) 1999-06-22 2001-01-15 김영환 반도체소자의 제조방법
KR20010083476A (ko) 2000-02-15 2001-09-01 박종섭 미세패턴 형성방법
US6762130B2 (en) 2002-05-31 2004-07-13 Texas Instruments Incorporated Method of photolithographically forming extremely narrow transistor gate elements
KR200291154Y1 (ko) * 2002-07-09 2002-10-11 박성준 전기ㆍ전자기기의 전선 정리용 기구

Also Published As

Publication number Publication date
JP4865361B2 (ja) 2012-02-01
US20090280651A1 (en) 2009-11-12
JP2007234870A (ja) 2007-09-13
TWI334174B (https=) 2010-12-01
TW200735208A (en) 2007-09-16
KR20070090063A (ko) 2007-09-05
US20070207618A1 (en) 2007-09-06
US8143175B2 (en) 2012-03-27

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