KR100872717B1 - 발광 소자 및 그 제조방법 - Google Patents

발광 소자 및 그 제조방법 Download PDF

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Publication number
KR100872717B1
KR100872717B1 KR1020070061429A KR20070061429A KR100872717B1 KR 100872717 B1 KR100872717 B1 KR 100872717B1 KR 1020070061429 A KR1020070061429 A KR 1020070061429A KR 20070061429 A KR20070061429 A KR 20070061429A KR 100872717 B1 KR100872717 B1 KR 100872717B1
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KR
South Korea
Prior art keywords
semiconductor layer
layer
conductive semiconductor
conductive
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020070061429A
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English (en)
Korean (ko)
Inventor
이상열
Original Assignee
엘지이노텍 주식회사
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Filing date
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Priority to KR1020070061429A priority Critical patent/KR100872717B1/ko
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to CN2008800151926A priority patent/CN101681959B/zh
Priority to PCT/KR2008/003437 priority patent/WO2009002040A2/en
Priority to EP08766398.5A priority patent/EP2160772B1/en
Priority to JP2010513109A priority patent/JP5450399B2/ja
Priority to DE202008018175U priority patent/DE202008018175U1/de
Priority to EP14178650.9A priority patent/EP2816614B1/en
Priority to US12/516,956 priority patent/US7989820B2/en
Priority to CN201310054919.4A priority patent/CN103151439B/zh
Application granted granted Critical
Publication of KR100872717B1 publication Critical patent/KR100872717B1/ko
Priority to US13/171,139 priority patent/US8994053B2/en
Priority to US13/745,402 priority patent/US8664682B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

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  • Led Devices (AREA)
KR1020070061429A 2007-06-22 2007-06-22 발광 소자 및 그 제조방법 Expired - Fee Related KR100872717B1 (ko)

Priority Applications (11)

Application Number Priority Date Filing Date Title
KR1020070061429A KR100872717B1 (ko) 2007-06-22 2007-06-22 발광 소자 및 그 제조방법
CN201310054919.4A CN103151439B (zh) 2007-06-22 2008-06-18 半导体发光器件及其制造方法
EP08766398.5A EP2160772B1 (en) 2007-06-22 2008-06-18 Semiconductor light emitting device
JP2010513109A JP5450399B2 (ja) 2007-06-22 2008-06-18 半導体発光素子及びその製造方法
DE202008018175U DE202008018175U1 (de) 2007-06-22 2008-06-18 Lichtemittierende Halbleitervorrichtung
EP14178650.9A EP2816614B1 (en) 2007-06-22 2008-06-18 Semiconductor light emitting device
CN2008800151926A CN101681959B (zh) 2007-06-22 2008-06-18 半导体发光器件及其制造方法
PCT/KR2008/003437 WO2009002040A2 (en) 2007-06-22 2008-06-18 Semiconductor light emitting device and method of fabricating the same
US12/516,956 US7989820B2 (en) 2007-06-22 2008-06-18 Semiconductor light emitting device and method of fabricating the same
US13/171,139 US8994053B2 (en) 2007-06-22 2011-06-28 Semiconductor light emitting device and method of fabricating the same
US13/745,402 US8664682B2 (en) 2007-06-22 2013-01-18 Semiconductor light emitting device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070061429A KR100872717B1 (ko) 2007-06-22 2007-06-22 발광 소자 및 그 제조방법

Publications (1)

Publication Number Publication Date
KR100872717B1 true KR100872717B1 (ko) 2008-12-05

Family

ID=40186144

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070061429A Expired - Fee Related KR100872717B1 (ko) 2007-06-22 2007-06-22 발광 소자 및 그 제조방법

Country Status (7)

Country Link
US (3) US7989820B2 (enExample)
EP (2) EP2160772B1 (enExample)
JP (1) JP5450399B2 (enExample)
KR (1) KR100872717B1 (enExample)
CN (2) CN103151439B (enExample)
DE (1) DE202008018175U1 (enExample)
WO (1) WO2009002040A2 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100986523B1 (ko) 2010-02-08 2010-10-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100986318B1 (ko) 2010-02-09 2010-10-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100986353B1 (ko) * 2009-12-09 2010-10-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR100986374B1 (ko) * 2009-12-09 2010-10-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR100999701B1 (ko) 2010-02-03 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101039904B1 (ko) * 2010-01-15 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
US11335838B2 (en) 2009-12-09 2022-05-17 Suzhou Lekin Semiconductor Co., Ltd. Light emitting apparatus

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DE102007029370A1 (de) * 2007-05-04 2008-11-06 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
KR100872717B1 (ko) * 2007-06-22 2008-12-05 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR101534848B1 (ko) 2008-07-21 2015-07-27 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법. 그리고 발광 소자 및 그발광 소자 제조방법
KR100999793B1 (ko) * 2009-02-17 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 제조방법
US20100327300A1 (en) * 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
JP2011035017A (ja) * 2009-07-30 2011-02-17 Hitachi Cable Ltd 発光素子
KR101081193B1 (ko) * 2009-10-15 2011-11-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101072034B1 (ko) * 2009-10-15 2011-10-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101014013B1 (ko) 2009-10-15 2011-02-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR20110062128A (ko) * 2009-12-02 2011-06-10 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
KR100999779B1 (ko) * 2010-02-01 2010-12-08 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
KR100999798B1 (ko) 2010-02-11 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100969100B1 (ko) 2010-02-12 2010-07-09 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
US8338317B2 (en) 2011-04-06 2012-12-25 Infineon Technologies Ag Method for processing a semiconductor wafer or die, and particle deposition device
KR101020995B1 (ko) * 2010-02-18 2011-03-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR100999692B1 (ko) * 2010-02-18 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101028277B1 (ko) 2010-05-25 2011-04-11 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 라이트 유닛
KR101182920B1 (ko) * 2010-07-05 2012-09-13 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR101000311B1 (ko) * 2010-07-27 2010-12-13 (주)더리즈 반도체 발광소자 및 그 제조방법
DE102010045784B4 (de) * 2010-09-17 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
US20140183589A1 (en) * 2011-08-09 2014-07-03 Samsung Electronics Co., Ltd. Method for manufacturing a semiconductor light-emitting element and semiconductor light-emitting element manufactured thereby
JP5992695B2 (ja) * 2012-02-29 2016-09-14 スタンレー電気株式会社 半導体発光素子アレイ及び車両用灯具
CN103489965A (zh) * 2012-06-13 2014-01-01 联胜光电股份有限公司 具反射镜保护层的发光二极管
JP5440674B1 (ja) * 2012-09-18 2014-03-12 ウシオ電機株式会社 Ｌｅｄ素子及びその製造方法
JP6068091B2 (ja) * 2012-10-24 2017-01-25 スタンレー電気株式会社 発光素子
JP5818031B2 (ja) * 2013-03-21 2015-11-18 ウシオ電機株式会社 Ｌｅｄ素子
CN103594594B (zh) * 2013-11-08 2016-09-07 溧阳市江大技术转移中心有限公司 具有粗化透明电极的倒装发光二极管
JP2015191976A (ja) * 2014-03-27 2015-11-02 ウシオ電機株式会社 半導体発光素子及びその製造方法
CN113540283B (zh) * 2021-06-18 2023-01-24 西安理工大学 一种二维电子气型光电导纵向开关及其制作方法
CN114336268B (zh) * 2022-03-04 2022-05-31 苏州长光华芯光电技术股份有限公司 一种高可靠性低缺陷半导体发光器件及其制备方法

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100986353B1 (ko) * 2009-12-09 2010-10-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR100986374B1 (ko) * 2009-12-09 2010-10-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
US11335838B2 (en) 2009-12-09 2022-05-17 Suzhou Lekin Semiconductor Co., Ltd. Light emitting apparatus
KR101039904B1 (ko) * 2010-01-15 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
US8368107B2 (en) 2010-01-15 2013-02-05 Lg Innotek Co., Ltd. Light emitting device, method of manufacturing the same, and light emitting device package
KR100999701B1 (ko) 2010-02-03 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR100986523B1 (ko) 2010-02-08 2010-10-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US8143639B2 (en) 2010-02-08 2012-03-27 Lg Innotek Co., Ltd. Light emitting device and light emitting device package having the same
US8674389B2 (en) 2010-02-08 2014-03-18 Lg Innotek Co., Ltd. Light emitting device and light emitting device package having the same
KR100986318B1 (ko) 2010-02-09 2010-10-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
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Also Published As

Publication number Publication date
CN101681959A (zh) 2010-03-24
EP2160772B1 (en) 2014-09-03
US20100065872A1 (en) 2010-03-18
EP2160772A4 (en) 2011-11-16
JP5450399B2 (ja) 2014-03-26
CN101681959B (zh) 2013-03-27
US8994053B2 (en) 2015-03-31
WO2009002040A3 (en) 2009-02-26
US20130126899A1 (en) 2013-05-23
DE202008018175U1 (de) 2011-12-08
CN103151439A (zh) 2013-06-12
JP2010531058A (ja) 2010-09-16
US7989820B2 (en) 2011-08-02
WO2009002040A2 (en) 2008-12-31
US8664682B2 (en) 2014-03-04
EP2160772A2 (en) 2010-03-10
EP2816614A1 (en) 2014-12-24
EP2816614B1 (en) 2022-05-04
US20110254041A1 (en) 2011-10-20
CN103151439B (zh) 2016-06-22

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