JP2010531058A - 半導体発光素子及びその製造方法 - Google Patents
半導体発光素子及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 189
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000010410 layer Substances 0.000 claims abstract description 225
- 230000002093 peripheral effect Effects 0.000 claims abstract description 79
- 239000011241 protective layer Substances 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 36
- 239000002019 doping agent Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- 229910002704 AlGaN Inorganic materials 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 19
- 150000001875 compounds Chemical class 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
101 ウエハー基板
102 第1導電型半導体層
103 活性層
104 第2導電型半導体層
105 発光構造物
106 周縁溝
107 周縁部保護層
108 反射電極層
109 酸化膜パターン
110 伝導性支持基板
112 第1電極
100A チップ
Claims (20)
- 第1導電型半導体層と、前記第1導電型半導体層下に活性層と、前記活性層下に第2導電型半導体層と、を含む発光構造物と、
前記発光構造物の下に反射電極層と、
前記反射電極層の外側の周辺に周縁部保護層と、を含む半導体発光素子。 - 前記周縁部保護層は、前記第2導電型半導体層と同一半導体材料を含む請求項1に記載の半導体発光素子。
- 前記周縁部保護層は、フレームの形態で前記反射電極層の外側上部と前記第2導電型半導体層の間に形成される請求項1に記載の半導体発光素子。
- 前記周縁部保護層は、GaN、InN、AlN、InGaN、AlGaN、InAlGaN、AlInNの中で少なくとも一つを含み、n型ドーパント又はp型ドーパントでドープされる請求項1に記載の半導体発光素子。
- 前記周縁部保護層はundoped-GaN層を含む請求項1に記載の半導体発光素子。
- 前記発光構造物には、前記第1導電型半導体層から前記第2導電型半導体層の外側の周辺に周縁溝を含む請求項1に記載の半導体発光素子。
- 前記周縁溝は、前記第1導電型半導体層の周縁部から前記第2導電型半導体層が露出する深さ、又は前記周縁部保護層が露出する深さに形成される請求項6に記載の半導体発光素子。
- 前記第1導電型半導体層はn型半導体層を含み、前記第2導電型半導体層はp型半導体層を含む請求項1に記載の半導体発光素子。
- 前記反射電極層の下に伝導性支持基板を含み、前記第1導電型半導体層上に形成された第1電極及び透明電極層の中で少なくとも一つを含む請求項1に記載の半導体発光素子。
- 第1導電型半導体層と、前記第1導電型半導体層下に活性層と、前記活性層下に第2導電型半導体層と、前記各層の外側の周辺に周縁溝と、を含む発光構造物と、
前記発光構造物の下に反射電極層と、
を含む半導体発光素子。 - 前記第2導電型半導体層の外側下部は、前記反射電極層の外側の周辺にフレームの形態に形成される請求項10に記載の半導体発光素子。
- 前記反射電極層の外側の周辺にフレームの形態の周縁部保護層を含む請求項10に記載の半導体発光素子。
- 前記周縁溝はフレームの形態であり、その幅は前記周縁部保護層の幅より小さい請求項12に記載の半導体発光素子。
- 前記第2導電型半導体層のセンター領域と外側の周辺領域の厚さが異なって形成される請求項10に記載の半導体発光素子。
- 前記周縁部保護層の幅は20μm〜600μmであり、厚さは5000Å〜500μmに形成される請求項12に記載の半導体発光素子。
- 前記周縁溝の幅は10μm〜500μmに形成される請求項10に記載の半導体発光素子。
- 前記第2導電型半導体層の下に、n型半導体層又はp型半導体層を含む請求項10に記載の半導体発光素子。
- ウエハー基板上に、少なくとも第1導電性半導体層、活性層及び第2導電性半導体層が連続して積層された発光構造物を形成する段階と、
前記第2導電性半導体層上の外側の周辺にフレームの形態で周縁部保護層を形成する段階と、
前記第2導電性半導体層及び周縁部保護層上に反射電極層を形成する段階を含む半導体発光素子の製造方法。 - 前記ウエハー基板を除去する段階と、前記反射電極層をベースに位置させた後、前記発光構造物の外側の周辺をエッチングして周縁溝を形成する段階と、前記第1導電型半導体層上に第1電極を形成する段階を含む請求項18に記載の半導体発光素子の製造方法。
- 前記周縁部保護層を形成する段階は、前記第2導電性半導体層上のセンター領域に酸化膜パターンを形成する段階と、前記酸化膜パターンの外側の周辺に周縁部保護層を形成した後、前記酸化膜パターンを除去する段階を含み、
前記反射電極層上に伝導性支持基板を形成する段階を含む請求項18に記載の半導体発光素子の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR10-2007-0061429 | 2007-06-22 | ||
KR1020070061429A KR100872717B1 (ko) | 2007-06-22 | 2007-06-22 | 발광 소자 및 그 제조방법 |
PCT/KR2008/003437 WO2009002040A2 (en) | 2007-06-22 | 2008-06-18 | Semiconductor light emitting device and method of fabricating the same |
Publications (3)
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JP2010531058A true JP2010531058A (ja) | 2010-09-16 |
JP2010531058A5 JP2010531058A5 (ja) | 2012-02-09 |
JP5450399B2 JP5450399B2 (ja) | 2014-03-26 |
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JP2010513109A Active JP5450399B2 (ja) | 2007-06-22 | 2008-06-18 | 半導体発光素子及びその製造方法 |
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Country | Link |
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US (3) | US7989820B2 (ja) |
EP (2) | EP2160772B1 (ja) |
JP (1) | JP5450399B2 (ja) |
KR (1) | KR100872717B1 (ja) |
CN (2) | CN101681959B (ja) |
DE (1) | DE202008018175U1 (ja) |
WO (1) | WO2009002040A2 (ja) |
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JP2012028773A (ja) * | 2010-07-27 | 2012-02-09 | Theleds Co Ltd | 半導体発光素子及びその製造方法 |
WO2014045882A1 (ja) * | 2012-09-18 | 2014-03-27 | ウシオ電機株式会社 | Led素子及びその製造方法 |
JP2014183295A (ja) * | 2013-03-21 | 2014-09-29 | Ushio Inc | Led素子 |
JP2017079335A (ja) * | 2009-10-15 | 2017-04-27 | エルジー イノテック カンパニー リミテッド | 発光素子 |
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JP2011035017A (ja) * | 2009-07-30 | 2011-02-17 | Hitachi Cable Ltd | 発光素子 |
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JP2019004161A (ja) * | 2009-10-15 | 2019-01-10 | エルジー イノテック カンパニー リミテッド | 発光素子 |
JP2012028773A (ja) * | 2010-07-27 | 2012-02-09 | Theleds Co Ltd | 半導体発光素子及びその製造方法 |
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JP2014183295A (ja) * | 2013-03-21 | 2014-09-29 | Ushio Inc | Led素子 |
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CN101681959A (zh) | 2010-03-24 |
US7989820B2 (en) | 2011-08-02 |
US20100065872A1 (en) | 2010-03-18 |
CN103151439B (zh) | 2016-06-22 |
DE202008018175U1 (de) | 2011-12-08 |
US8664682B2 (en) | 2014-03-04 |
JP5450399B2 (ja) | 2014-03-26 |
EP2816614A1 (en) | 2014-12-24 |
US8994053B2 (en) | 2015-03-31 |
EP2816614B1 (en) | 2022-05-04 |
US20130126899A1 (en) | 2013-05-23 |
EP2160772A4 (en) | 2011-11-16 |
WO2009002040A3 (en) | 2009-02-26 |
WO2009002040A2 (en) | 2008-12-31 |
EP2160772B1 (en) | 2014-09-03 |
CN103151439A (zh) | 2013-06-12 |
KR100872717B1 (ko) | 2008-12-05 |
CN101681959B (zh) | 2013-03-27 |
US20110254041A1 (en) | 2011-10-20 |
EP2160772A2 (en) | 2010-03-10 |
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