CN103151439B - 半导体发光器件及其制造方法 - Google Patents

半导体发光器件及其制造方法 Download PDF

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Publication number
CN103151439B
CN103151439B CN201310054919.4A CN201310054919A CN103151439B CN 103151439 B CN103151439 B CN 103151439B CN 201310054919 A CN201310054919 A CN 201310054919A CN 103151439 B CN103151439 B CN 103151439B
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China
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layer
type semiconductor
light emitting
semiconductor layer
conductive
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Chinese (zh)
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CN103151439A (zh
Inventor
李尚烈
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Suzhou Liyu Semiconductor Co ltd
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LG Innotek Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

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  • Led Devices (AREA)
CN201310054919.4A 2007-06-22 2008-06-18 半导体发光器件及其制造方法 Active CN103151439B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2007-0061429 2007-06-22
KR1020070061429A KR100872717B1 (ko) 2007-06-22 2007-06-22 발광 소자 및 그 제조방법
CN2008800151926A CN101681959B (zh) 2007-06-22 2008-06-18 半导体发光器件及其制造方法

Related Parent Applications (1)

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CN2008800151926A Division CN101681959B (zh) 2007-06-22 2008-06-18 半导体发光器件及其制造方法

Publications (2)

Publication Number Publication Date
CN103151439A CN103151439A (zh) 2013-06-12
CN103151439B true CN103151439B (zh) 2016-06-22

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CN2008800151926A Expired - Fee Related CN101681959B (zh) 2007-06-22 2008-06-18 半导体发光器件及其制造方法
CN201310054919.4A Active CN103151439B (zh) 2007-06-22 2008-06-18 半导体发光器件及其制造方法

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CN2008800151926A Expired - Fee Related CN101681959B (zh) 2007-06-22 2008-06-18 半导体发光器件及其制造方法

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US (3) US7989820B2 (enExample)
EP (2) EP2160772B1 (enExample)
JP (1) JP5450399B2 (enExample)
KR (1) KR100872717B1 (enExample)
CN (2) CN101681959B (enExample)
DE (1) DE202008018175U1 (enExample)
WO (1) WO2009002040A2 (enExample)

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KR101182920B1 (ko) * 2010-07-05 2012-09-13 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR101000311B1 (ko) * 2010-07-27 2010-12-13 (주)더리즈 반도체 발광소자 및 그 제조방법
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JP5992695B2 (ja) * 2012-02-29 2016-09-14 スタンレー電気株式会社 半導体発光素子アレイ及び車両用灯具
CN103489965A (zh) * 2012-06-13 2014-01-01 联胜光电股份有限公司 具反射镜保护层的发光二极管
JP5440674B1 (ja) * 2012-09-18 2014-03-12 ウシオ電機株式会社 Ｌｅｄ素子及びその製造方法
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Also Published As

Publication number Publication date
KR100872717B1 (ko) 2008-12-05
EP2160772B1 (en) 2014-09-03
US8664682B2 (en) 2014-03-04
WO2009002040A3 (en) 2009-02-26
US20130126899A1 (en) 2013-05-23
US20100065872A1 (en) 2010-03-18
US20110254041A1 (en) 2011-10-20
JP2010531058A (ja) 2010-09-16
EP2160772A4 (en) 2011-11-16
EP2816614A1 (en) 2014-12-24
WO2009002040A2 (en) 2008-12-31
EP2160772A2 (en) 2010-03-10
US8994053B2 (en) 2015-03-31
US7989820B2 (en) 2011-08-02
JP5450399B2 (ja) 2014-03-26
DE202008018175U1 (de) 2011-12-08
CN101681959A (zh) 2010-03-24
EP2816614B1 (en) 2022-05-04
CN103151439A (zh) 2013-06-12
CN101681959B (zh) 2013-03-27

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Effective date of registration: 20210818

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

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Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

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CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China

CP03 Change of name, title or address