KR100865581B1 - 반도체장치의 제조방법 및 기판처리장치 - Google Patents

반도체장치의 제조방법 및 기판처리장치 Download PDF

Info

Publication number
KR100865581B1
KR100865581B1 KR1020077008201A KR20077008201A KR100865581B1 KR 100865581 B1 KR100865581 B1 KR 100865581B1 KR 1020077008201 A KR1020077008201 A KR 1020077008201A KR 20077008201 A KR20077008201 A KR 20077008201A KR 100865581 B1 KR100865581 B1 KR 100865581B1
Authority
KR
South Korea
Prior art keywords
film
substrate
gas
metal atom
wafer
Prior art date
Application number
KR1020077008201A
Other languages
English (en)
Korean (ko)
Other versions
KR20070072871A (ko
Inventor
김용원
사다요시 호리이
Original Assignee
가부시키가이샤 히다치 고쿠사이 덴키
국제엘렉트릭코리아 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 히다치 고쿠사이 덴키, 국제엘렉트릭코리아 주식회사 filed Critical 가부시키가이샤 히다치 고쿠사이 덴키
Publication of KR20070072871A publication Critical patent/KR20070072871A/ko
Application granted granted Critical
Publication of KR100865581B1 publication Critical patent/KR100865581B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28229—Making the insulator by deposition of a layer, e.g. metal, metal compound or poysilicon, followed by transformation thereof into an insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
KR1020077008201A 2005-02-24 2006-02-17 반도체장치의 제조방법 및 기판처리장치 KR100865581B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00049571 2005-02-24
JP2005049571 2005-02-24

Publications (2)

Publication Number Publication Date
KR20070072871A KR20070072871A (ko) 2007-07-06
KR100865581B1 true KR100865581B1 (ko) 2008-10-28

Family

ID=36927286

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077008201A KR100865581B1 (ko) 2005-02-24 2006-02-17 반도체장치의 제조방법 및 기판처리장치

Country Status (3)

Country Link
JP (1) JPWO2006090645A1 (ja)
KR (1) KR100865581B1 (ja)
WO (1) WO2006090645A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011037377A3 (ko) * 2009-09-25 2011-08-04 주식회사 티지솔라 배치식 에피택셜층 형성장치 및 그 형성방법

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5221089B2 (ja) * 2007-09-19 2013-06-26 東京エレクトロン株式会社 成膜方法、成膜装置および記憶媒体
US20090130414A1 (en) * 2007-11-08 2009-05-21 Air Products And Chemicals, Inc. Preparation of A Metal-containing Film Via ALD or CVD Processes
JP5869784B2 (ja) * 2011-06-30 2016-02-24 キヤノンアネルバ株式会社 金属酸化物高誘電体エピタキシャル膜の製造方法、および基板処理装置
JP7012613B2 (ja) * 2018-07-13 2022-01-28 東京エレクトロン株式会社 成膜方法及び成膜装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100243259B1 (ko) * 1992-10-07 2000-02-01 윤종용 반도체장치의 얕은 접합 형성방법
KR20040087310A (ko) * 2002-08-26 2004-10-13 에이에스엠 아메리카, 인코포레이티드 저온 게이트 스택

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07153685A (ja) * 1993-11-29 1995-06-16 Oki Electric Ind Co Ltd 歪ヘテロ超格子構造の薄膜形成方法
JPH1032168A (ja) * 1996-07-15 1998-02-03 Mitsubishi Heavy Ind Ltd シリコン基板表面の保護膜形成方法
US6806145B2 (en) * 2001-08-31 2004-10-19 Asm International, N.V. Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer
JP4136939B2 (ja) * 2002-01-09 2008-08-20 松下電器産業株式会社 半導体装置およびその製造方法
JP2004047634A (ja) * 2002-07-10 2004-02-12 Tokyo Electron Ltd 成膜方法及び成膜装置
JP2004119938A (ja) * 2002-09-30 2004-04-15 Samco International Inc 酸化シリコン膜製造方法及び装置
JP2004266263A (ja) * 2003-02-12 2004-09-24 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100243259B1 (ko) * 1992-10-07 2000-02-01 윤종용 반도체장치의 얕은 접합 형성방법
KR20040087310A (ko) * 2002-08-26 2004-10-13 에이에스엠 아메리카, 인코포레이티드 저온 게이트 스택

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011037377A3 (ko) * 2009-09-25 2011-08-04 주식회사 티지솔라 배치식 에피택셜층 형성장치 및 그 형성방법

Also Published As

Publication number Publication date
JPWO2006090645A1 (ja) 2008-07-24
WO2006090645A1 (ja) 2006-08-31
KR20070072871A (ko) 2007-07-06

Similar Documents

Publication Publication Date Title
US8685866B2 (en) Method of manufacturing semiconductor device and substrate processing apparatus
JP5513767B2 (ja) 半導体装置の製造方法、基板処理方法、基板処理装置および半導体装置
US8404603B2 (en) Method of manufacturing semiconductor device and substrate processing system
US8728935B2 (en) Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus
JP2007516599A (ja) ゲルマニウム上の堆積前の表面調製
KR20100124210A (ko) 반도체 장치의 제조 방법 및 기판 처리 장치
US20150243507A1 (en) Method of manufacturing semiconductor device
US20180182652A1 (en) Substrate processing apparatus, substrate processing method, and substrate processing system
JP4694209B2 (ja) 基板処理装置及び半導体装置の製造方法
US11598001B2 (en) Film forming method
WO2018055724A1 (ja) 半導体装置の製造方法、基板処理装置およびプログラム
JP2008131050A (ja) 半導体素子への金属含有膜の集積方法
KR100865581B1 (ko) 반도체장치의 제조방법 및 기판처리장치
US20050136693A1 (en) Thermal processing unit and thermal processing method
WO2011093203A1 (ja) 半導体装置の製造方法、基板処理装置及び半導体装置
JP5801916B2 (ja) 半導体装置の製造方法、基板処理方法、および基板処理装置
KR102589043B1 (ko) 성막 방법
JP7296806B2 (ja) ＲｕＳｉ膜の形成方法及び基板処理システム
KR20080025081A (ko) 기판 처리 방법, 컴퓨터 판독 가능 기록 매체, 기판 처리장치, 및 기판 처리 시스템
TWI501296B (zh) A semiconductor device manufacturing method, a semiconductor device, and a substrate processing device
US11981992B2 (en) Method for forming RuSi film and substrate processing system
US20240052483A1 (en) Film forming method and film forming apparatus
JP5204809B2 (ja) 基板処理装置、基板処理方法及び半導体デバイスの製造方法

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20121010

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20131011

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20141008

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20151020

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20161020

Year of fee payment: 9

FPAY Annual fee payment

Payment date: 20171016

Year of fee payment: 10

FPAY Annual fee payment

Payment date: 20180807

Year of fee payment: 11

FPAY Annual fee payment

Payment date: 20190718

Year of fee payment: 12