KR100864331B1 - 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 방법 Download PDF

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KR100864331B1
KR100864331B1 KR1020070026431A KR20070026431A KR100864331B1 KR 100864331 B1 KR100864331 B1 KR 100864331B1 KR 1020070026431 A KR1020070026431 A KR 1020070026431A KR 20070026431 A KR20070026431 A KR 20070026431A KR 100864331 B1 KR100864331 B1 KR 100864331B1
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gas
plasma
chamber
layer
plasma processing
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KR20070095210A (ko
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요시유끼 고바야시
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/18—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Coating By Spraying Or Casting (AREA)
  • ing And Chemical Polishing (AREA)
KR1020070026431A 2006-03-20 2007-03-19 플라즈마 처리 장치 및 플라즈마 처리 방법 Active KR100864331B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006076195A JP4996868B2 (ja) 2006-03-20 2006-03-20 プラズマ処理装置およびプラズマ処理方法
JPJP-P-2006-00076195 2006-03-20

Publications (2)

Publication Number Publication Date
KR20070095210A KR20070095210A (ko) 2007-09-28
KR100864331B1 true KR100864331B1 (ko) 2008-10-17

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KR1020070026431A Active KR100864331B1 (ko) 2006-03-20 2007-03-19 플라즈마 처리 장치 및 플라즈마 처리 방법

Country Status (5)

Country Link
JP (1) JP4996868B2 (enExample)
KR (1) KR100864331B1 (enExample)
CN (1) CN100508116C (enExample)
TW (1) TW200741857A (enExample)
WO (1) WO2007108549A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150054657A (ko) * 2013-11-12 2015-05-20 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치

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JP2008266724A (ja) * 2007-04-20 2008-11-06 Shin Etsu Chem Co Ltd 溶射被膜の表面処理方法及び表面処理された溶射被膜
JP2009301783A (ja) * 2008-06-11 2009-12-24 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
CN101740329B (zh) * 2008-11-17 2012-12-05 中芯国际集成电路制造(上海)有限公司 等离子处理方法
JP5415853B2 (ja) * 2009-07-10 2014-02-12 東京エレクトロン株式会社 表面処理方法
US20120216955A1 (en) * 2011-02-25 2012-08-30 Toshiba Materials Co., Ltd. Plasma processing apparatus
JP5879069B2 (ja) * 2011-08-11 2016-03-08 東京エレクトロン株式会社 プラズマ処理装置の上部電極の製造方法
JP2013095973A (ja) * 2011-11-02 2013-05-20 Tocalo Co Ltd 半導体製造装置用部材
US9212099B2 (en) * 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
JP2012129549A (ja) * 2012-03-06 2012-07-05 Tokyo Electron Ltd 静電チャック部材
JP5526364B2 (ja) * 2012-04-16 2014-06-18 トーカロ株式会社 白色酸化イットリウム溶射皮膜表面の改質方法
US9257285B2 (en) * 2012-08-22 2016-02-09 Infineon Technologies Ag Ion source devices and methods
US20140357092A1 (en) * 2013-06-04 2014-12-04 Lam Research Corporation Chamber wall of a plasma processing apparatus including a flowing protective liquid layer
CN104241069B (zh) * 2013-06-13 2016-11-23 中微半导体设备(上海)有限公司 等离子体装置内具有氧化钇包覆层的部件及其制造方法
JP6985267B2 (ja) 2015-11-16 2021-12-22 クアーズテック，インコーポレイティド 耐食性構成部品および製造方法
US12567564B2 (en) 2015-11-16 2026-03-03 Coorstek, Inc. Corrosion-resistant components
JP6146841B1 (ja) * 2016-08-04 2017-06-14 日本新工芯技株式会社 リング状電極
KR102407119B1 (ko) 2016-11-02 2022-06-10 닛폰 이트륨 가부시키가이샤 성막용 재료 및 피막
KR102384436B1 (ko) * 2016-11-16 2022-04-12 쿠어스 테크, 인코포레이티드 내부식성 부품 및 제조 방법
CN108122805B (zh) * 2016-11-29 2020-10-16 北京北方华创微电子装备有限公司 去气腔室和半导体加工设备
KR20180071695A (ko) 2016-12-20 2018-06-28 주식회사 티씨케이 층간 경계를 덮는 증착층을 포함하는 반도체 제조용 부품 및 그 제조방법
KR102016615B1 (ko) * 2017-09-14 2019-08-30 (주)코미코 내플라즈마 특성이 향상된 플라즈마 에칭 장치용 부재 및 그 제조 방법
US20190119815A1 (en) * 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering
CN110512178B (zh) * 2018-05-22 2021-08-13 北京北方华创微电子装备有限公司 腔室内衬、工艺腔室和半导体处理设备
JP7165748B2 (ja) * 2018-12-05 2022-11-04 京セラ株式会社 プラズマ処理装置用部材およびこれを備えるプラズマ処理装置
JP7097809B2 (ja) * 2018-12-28 2022-07-08 東京エレクトロン株式会社 ガス導入構造、処理装置及び処理方法
JP7329619B2 (ja) * 2019-11-27 2023-08-18 京セラ株式会社 耐プラズマ性部材、プラズマ処理装置用部品およびプラズマ処理装置
JP7454691B2 (ja) * 2020-09-18 2024-03-22 株式会社Kokusai Electric 基板処理装置、プラズマ発光装置、半導体装置の製造方法及びプログラム

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KR20010098643A (ko) * 2000-04-18 2001-11-08 시바타 마사하루 내할로겐 가스 플라즈마용 부재 및 그 제조 방법과,적층체, 내식성 부재 및 내할로겐 가스 플라즈마용 부재
KR20020089344A (ko) * 2000-12-12 2002-11-29 코니카가부시끼가이샤 박막 형성 방법, 박막을 갖는 물품, 광학 필름, 유전체피복 전극 및 플라즈마 방전 처리 장치
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KR970013180A (ko) * 1995-08-31 1997-03-29 나카히라 아키라 정전 척부재 및 그 제조방법
KR20050085980A (ko) * 1999-12-10 2005-08-29 도카로 가부시키가이샤 플라즈마처리 용기 내부재 및 그 제조방법
KR20010098643A (ko) * 2000-04-18 2001-11-08 시바타 마사하루 내할로겐 가스 플라즈마용 부재 및 그 제조 방법과,적층체, 내식성 부재 및 내할로겐 가스 플라즈마용 부재
KR20020089344A (ko) * 2000-12-12 2002-11-29 코니카가부시끼가이샤 박막 형성 방법, 박막을 갖는 물품, 광학 필름, 유전체피복 전극 및 플라즈마 방전 처리 장치

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150054657A (ko) * 2013-11-12 2015-05-20 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
KR102293092B1 (ko) * 2013-11-12 2021-08-23 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치

Also Published As

Publication number Publication date
TW200741857A (en) 2007-11-01
WO2007108549A1 (ja) 2007-09-27
CN100508116C (zh) 2009-07-01
JP2007251091A (ja) 2007-09-27
CN101042996A (zh) 2007-09-26
TWI374492B (enExample) 2012-10-11
JP4996868B2 (ja) 2012-08-08
KR20070095210A (ko) 2007-09-28

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