TWI374492B - - Google Patents

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Publication number
TWI374492B
TWI374492B TW096108643A TW96108643A TWI374492B TW I374492 B TWI374492 B TW I374492B TW 096108643 A TW096108643 A TW 096108643A TW 96108643 A TW96108643 A TW 96108643A TW I374492 B TWI374492 B TW I374492B
Authority
TW
Taiwan
Prior art keywords
plasma
gas
layer
processing chamber
metal oxide
Prior art date
Application number
TW096108643A
Other languages
English (en)
Chinese (zh)
Other versions
TW200741857A (en
Inventor
Yoshiyuki Kobayashi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200741857A publication Critical patent/TW200741857A/zh
Application granted granted Critical
Publication of TWI374492B publication Critical patent/TWI374492B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/18—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Coating By Spraying Or Casting (AREA)
  • ing And Chemical Polishing (AREA)
TW096108643A 2006-03-20 2007-03-13 Plasma treating apparatus and plasma treating method TW200741857A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006076195A JP4996868B2 (ja) 2006-03-20 2006-03-20 プラズマ処理装置およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
TW200741857A TW200741857A (en) 2007-11-01
TWI374492B true TWI374492B (enExample) 2012-10-11

Family

ID=38522573

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096108643A TW200741857A (en) 2006-03-20 2007-03-13 Plasma treating apparatus and plasma treating method

Country Status (5)

Country Link
JP (1) JP4996868B2 (enExample)
KR (1) KR100864331B1 (enExample)
CN (1) CN100508116C (enExample)
TW (1) TW200741857A (enExample)
WO (1) WO2007108549A1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
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JP2008266724A (ja) * 2007-04-20 2008-11-06 Shin Etsu Chem Co Ltd 溶射被膜の表面処理方法及び表面処理された溶射被膜
JP2009301783A (ja) * 2008-06-11 2009-12-24 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
CN101740329B (zh) * 2008-11-17 2012-12-05 中芯国际集成电路制造(上海)有限公司 等离子处理方法
JP5415853B2 (ja) * 2009-07-10 2014-02-12 東京エレクトロン株式会社 表面処理方法
US20120216955A1 (en) * 2011-02-25 2012-08-30 Toshiba Materials Co., Ltd. Plasma processing apparatus
JP5879069B2 (ja) * 2011-08-11 2016-03-08 東京エレクトロン株式会社 プラズマ処理装置の上部電極の製造方法
JP2013095973A (ja) * 2011-11-02 2013-05-20 Tocalo Co Ltd 半導体製造装置用部材
US9212099B2 (en) * 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
JP2012129549A (ja) * 2012-03-06 2012-07-05 Tokyo Electron Ltd 静電チャック部材
JP5526364B2 (ja) * 2012-04-16 2014-06-18 トーカロ株式会社 白色酸化イットリウム溶射皮膜表面の改質方法
US9257285B2 (en) 2012-08-22 2016-02-09 Infineon Technologies Ag Ion source devices and methods
US20140357092A1 (en) * 2013-06-04 2014-12-04 Lam Research Corporation Chamber wall of a plasma processing apparatus including a flowing protective liquid layer
CN104241069B (zh) * 2013-06-13 2016-11-23 中微半导体设备(上海)有限公司 等离子体装置内具有氧化钇包覆层的部件及其制造方法
US10319568B2 (en) * 2013-11-12 2019-06-11 Tokyo Electron Limited Plasma processing apparatus for performing plasma process for target object
EP3377318A1 (en) 2015-11-16 2018-09-26 Coorstek Inc. Corrosion-resistant components and methods of making
JP6146841B1 (ja) * 2016-08-04 2017-06-14 日本新工芯技株式会社 リング状電極
WO2018083854A1 (ja) 2016-11-02 2018-05-11 日本イットリウム株式会社 成膜用材料及び皮膜
CN109963825B (zh) * 2016-11-16 2022-08-09 阔斯泰公司 耐腐蚀组件和制造方法
CN108122805B (zh) * 2016-11-29 2020-10-16 北京北方华创微电子装备有限公司 去气腔室和半导体加工设备
KR20180071695A (ko) 2016-12-20 2018-06-28 주식회사 티씨케이 층간 경계를 덮는 증착층을 포함하는 반도체 제조용 부품 및 그 제조방법
KR102016615B1 (ko) * 2017-09-14 2019-08-30 (주)코미코 내플라즈마 특성이 향상된 플라즈마 에칭 장치용 부재 및 그 제조 방법
US20190119815A1 (en) * 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering
CN110512178B (zh) * 2018-05-22 2021-08-13 北京北方华创微电子装备有限公司 腔室内衬、工艺腔室和半导体处理设备
US12065727B2 (en) * 2018-12-05 2024-08-20 Kyocera Corporation Member for plasma processing device and plasma processing device provided with same
JP7097809B2 (ja) * 2018-12-28 2022-07-08 東京エレクトロン株式会社 ガス導入構造、処理装置及び処理方法
JP7329619B2 (ja) * 2019-11-27 2023-08-18 京セラ株式会社 耐プラズマ性部材、プラズマ処理装置用部品およびプラズマ処理装置
JP7454691B2 (ja) * 2020-09-18 2024-03-22 株式会社Kokusai Electric 基板処理装置、プラズマ発光装置、半導体装置の製造方法及びプログラム

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JP2761112B2 (ja) * 1991-02-21 1998-06-04 松下電工株式会社 絶縁層付き金属基板およびその製造方法
JP2971369B2 (ja) * 1995-08-31 1999-11-02 トーカロ株式会社 静電チャック部材およびその製造方法
JPH104083A (ja) * 1996-06-17 1998-01-06 Kyocera Corp 半導体製造用耐食性部材
GB9616225D0 (en) * 1996-08-01 1996-09-11 Surface Tech Sys Ltd Method of surface treatment of semiconductor substrates
JP3510993B2 (ja) * 1999-12-10 2004-03-29 トーカロ株式会社 プラズマ処理容器内部材およびその製造方法
TW503449B (en) * 2000-04-18 2002-09-21 Ngk Insulators Ltd Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members
CN101333654B (zh) * 2000-12-12 2011-06-15 柯尼卡美能达控股株式会社 等离子体放电处理装置
JP4051351B2 (ja) * 2004-03-12 2008-02-20 トーカロ株式会社 熱放射性および耐損傷性に優れるｙ２ｏ３溶射皮膜被覆部材およびその製造方法

Also Published As

Publication number Publication date
JP2007251091A (ja) 2007-09-27
CN100508116C (zh) 2009-07-01
CN101042996A (zh) 2007-09-26
JP4996868B2 (ja) 2012-08-08
KR100864331B1 (ko) 2008-10-17
WO2007108549A1 (ja) 2007-09-27
TW200741857A (en) 2007-11-01
KR20070095210A (ko) 2007-09-28

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