CN100508116C - 等离子体处理装置和等离子体处理方法 - Google Patents
等离子体处理装置和等离子体处理方法 Download PDFInfo
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- CN100508116C CN100508116C CNB2007101006931A CN200710100693A CN100508116C CN 100508116 C CN100508116 C CN 100508116C CN B2007101006931 A CNB2007101006931 A CN B2007101006931A CN 200710100693 A CN200710100693 A CN 200710100693A CN 100508116 C CN100508116 C CN 100508116C
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- plasma
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- plasma processing
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- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/18—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
- C23C4/11—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Coating By Spraying Or Casting (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006076195 | 2006-03-20 | ||
| JP2006076195A JP4996868B2 (ja) | 2006-03-20 | 2006-03-20 | プラズマ処理装置およびプラズマ処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101042996A CN101042996A (zh) | 2007-09-26 |
| CN100508116C true CN100508116C (zh) | 2009-07-01 |
Family
ID=38522573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007101006931A Active CN100508116C (zh) | 2006-03-20 | 2007-03-19 | 等离子体处理装置和等离子体处理方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4996868B2 (enExample) |
| KR (1) | KR100864331B1 (enExample) |
| CN (1) | CN100508116C (enExample) |
| TW (1) | TW200741857A (enExample) |
| WO (1) | WO2007108549A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104217915A (zh) * | 2013-06-04 | 2014-12-17 | 朗姆研究公司 | 等离子体处理装置的包括流动的保护性液体层的室壁 |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008266724A (ja) * | 2007-04-20 | 2008-11-06 | Shin Etsu Chem Co Ltd | 溶射被膜の表面処理方法及び表面処理された溶射被膜 |
| JP2009301783A (ja) * | 2008-06-11 | 2009-12-24 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
| CN101740329B (zh) * | 2008-11-17 | 2012-12-05 | 中芯国际集成电路制造(上海)有限公司 | 等离子处理方法 |
| JP5415853B2 (ja) * | 2009-07-10 | 2014-02-12 | 東京エレクトロン株式会社 | 表面処理方法 |
| US20120216955A1 (en) * | 2011-02-25 | 2012-08-30 | Toshiba Materials Co., Ltd. | Plasma processing apparatus |
| JP5879069B2 (ja) * | 2011-08-11 | 2016-03-08 | 東京エレクトロン株式会社 | プラズマ処理装置の上部電極の製造方法 |
| JP2013095973A (ja) * | 2011-11-02 | 2013-05-20 | Tocalo Co Ltd | 半導体製造装置用部材 |
| US9212099B2 (en) * | 2012-02-22 | 2015-12-15 | Applied Materials, Inc. | Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics |
| JP2012129549A (ja) * | 2012-03-06 | 2012-07-05 | Tokyo Electron Ltd | 静電チャック部材 |
| JP5526364B2 (ja) * | 2012-04-16 | 2014-06-18 | トーカロ株式会社 | 白色酸化イットリウム溶射皮膜表面の改質方法 |
| US9257285B2 (en) * | 2012-08-22 | 2016-02-09 | Infineon Technologies Ag | Ion source devices and methods |
| CN104241069B (zh) * | 2013-06-13 | 2016-11-23 | 中微半导体设备(上海)有限公司 | 等离子体装置内具有氧化钇包覆层的部件及其制造方法 |
| US10319568B2 (en) * | 2013-11-12 | 2019-06-11 | Tokyo Electron Limited | Plasma processing apparatus for performing plasma process for target object |
| KR102674364B1 (ko) | 2015-11-16 | 2024-06-13 | 쿠어스 테크, 인코포레이티드 | 내부식성 부품 및 제조 방법 |
| JP6146841B1 (ja) * | 2016-08-04 | 2017-06-14 | 日本新工芯技株式会社 | リング状電極 |
| CN109844166B (zh) | 2016-11-02 | 2021-11-19 | 日本钇股份有限公司 | 成膜用材料及皮膜 |
| WO2018093414A1 (en) * | 2016-11-16 | 2018-05-24 | Coorstek, Inc. | Corrosion-resistant components and methods of making |
| CN108122805B (zh) * | 2016-11-29 | 2020-10-16 | 北京北方华创微电子装备有限公司 | 去气腔室和半导体加工设备 |
| KR20180071695A (ko) | 2016-12-20 | 2018-06-28 | 주식회사 티씨케이 | 층간 경계를 덮는 증착층을 포함하는 반도체 제조용 부품 및 그 제조방법 |
| KR102016615B1 (ko) * | 2017-09-14 | 2019-08-30 | (주)코미코 | 내플라즈마 특성이 향상된 플라즈마 에칭 장치용 부재 및 그 제조 방법 |
| US20190119815A1 (en) * | 2017-10-24 | 2019-04-25 | Applied Materials, Inc. | Systems and processes for plasma filtering |
| CN110512178B (zh) * | 2018-05-22 | 2021-08-13 | 北京北方华创微电子装备有限公司 | 腔室内衬、工艺腔室和半导体处理设备 |
| KR102621279B1 (ko) * | 2018-12-05 | 2024-01-05 | 교세라 가부시키가이샤 | 플라스마 처리 장치용 부재 및 이것을 구비하는 플라스마 처리 장치 |
| JP7097809B2 (ja) * | 2018-12-28 | 2022-07-08 | 東京エレクトロン株式会社 | ガス導入構造、処理装置及び処理方法 |
| WO2021106871A1 (ja) * | 2019-11-27 | 2021-06-03 | 京セラ株式会社 | 耐プラズマ性部材、プラズマ処理装置用部品およびプラズマ処理装置 |
| CN116114051A (zh) * | 2020-09-18 | 2023-05-12 | 株式会社国际电气 | 基板处理装置、等离子体发光装置、半导体装置的制造方法以及程序 |
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| JPH0715141B2 (ja) * | 1982-11-26 | 1995-02-22 | 株式会社東芝 | 耐熱部品 |
| JP2761112B2 (ja) * | 1991-02-21 | 1998-06-04 | 松下電工株式会社 | 絶縁層付き金属基板およびその製造方法 |
| JP2971369B2 (ja) * | 1995-08-31 | 1999-11-02 | トーカロ株式会社 | 静電チャック部材およびその製造方法 |
| JPH104083A (ja) * | 1996-06-17 | 1998-01-06 | Kyocera Corp | 半導体製造用耐食性部材 |
| GB9616225D0 (en) * | 1996-08-01 | 1996-09-11 | Surface Tech Sys Ltd | Method of surface treatment of semiconductor substrates |
| JP3510993B2 (ja) * | 1999-12-10 | 2004-03-29 | トーカロ株式会社 | プラズマ処理容器内部材およびその製造方法 |
| TW503449B (en) * | 2000-04-18 | 2002-09-21 | Ngk Insulators Ltd | Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members |
| KR100815038B1 (ko) * | 2000-12-12 | 2008-03-18 | 코니카 미놀타 홀딩스 가부시키가이샤 | 박막 형성 방법, 박막을 갖는 물품, 광학 필름, 유전체피복 전극 및 플라즈마 방전 처리 장치 |
| JP4051351B2 (ja) * | 2004-03-12 | 2008-02-20 | トーカロ株式会社 | 熱放射性および耐損傷性に優れるｙ２ｏ３溶射皮膜被覆部材およびその製造方法 |
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- 2007-03-19 KR KR1020070026431A patent/KR100864331B1/ko active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104217915A (zh) * | 2013-06-04 | 2014-12-17 | 朗姆研究公司 | 等离子体处理装置的包括流动的保护性液体层的室壁 |
Also Published As
| Publication number | Publication date |
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| JP4996868B2 (ja) | 2012-08-08 |
| TW200741857A (en) | 2007-11-01 |
| TWI374492B (enExample) | 2012-10-11 |
| JP2007251091A (ja) | 2007-09-27 |
| CN101042996A (zh) | 2007-09-26 |
| WO2007108549A1 (ja) | 2007-09-27 |
| KR100864331B1 (ko) | 2008-10-17 |
| KR20070095210A (ko) | 2007-09-28 |
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