TW200741857A - Plasma treating apparatus and plasma treating method - Google Patents

Plasma treating apparatus and plasma treating method

Info

Publication number
TW200741857A
TW200741857A TW096108643A TW96108643A TW200741857A TW 200741857 A TW200741857 A TW 200741857A TW 096108643 A TW096108643 A TW 096108643A TW 96108643 A TW96108643 A TW 96108643A TW 200741857 A TW200741857 A TW 200741857A
Authority
TW
Taiwan
Prior art keywords
plasma
plasma treating
chamber
atmosphere
treating apparatus
Prior art date
Application number
TW096108643A
Other languages
English (en)
Chinese (zh)
Other versions
TWI374492B (enExample
Inventor
Yoshiyuki Kobayashi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200741857A publication Critical patent/TW200741857A/zh
Application granted granted Critical
Publication of TWI374492B publication Critical patent/TWI374492B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/18—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Coating By Spraying Or Casting (AREA)
  • ing And Chemical Polishing (AREA)
TW096108643A 2006-03-20 2007-03-13 Plasma treating apparatus and plasma treating method TW200741857A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006076195A JP4996868B2 (ja) 2006-03-20 2006-03-20 プラズマ処理装置およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
TW200741857A true TW200741857A (en) 2007-11-01
TWI374492B TWI374492B (enExample) 2012-10-11

Family

ID=38522573

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096108643A TW200741857A (en) 2006-03-20 2007-03-13 Plasma treating apparatus and plasma treating method

Country Status (5)

Country Link
JP (1) JP4996868B2 (enExample)
KR (1) KR100864331B1 (enExample)
CN (1) CN100508116C (enExample)
TW (1) TW200741857A (enExample)
WO (1) WO2007108549A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI686864B (zh) * 2016-12-20 2020-03-01 韓商韓國東海炭素股份有限公司 具覆蓋層間邊界線之沉積層的半導體製造用部件
TWI718799B (zh) * 2018-12-05 2021-02-11 日商京瓷股份有限公司 電漿處理裝置用構件及具備其之電漿處理裝置
TWI759981B (zh) * 2019-11-27 2022-04-01 日商京瓷股份有限公司 耐電漿性構件、電漿處理裝置用零件及電漿處理裝置

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JP2008266724A (ja) * 2007-04-20 2008-11-06 Shin Etsu Chem Co Ltd 溶射被膜の表面処理方法及び表面処理された溶射被膜
JP2009301783A (ja) * 2008-06-11 2009-12-24 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
CN101740329B (zh) * 2008-11-17 2012-12-05 中芯国际集成电路制造(上海)有限公司 等离子处理方法
JP5415853B2 (ja) * 2009-07-10 2014-02-12 東京エレクトロン株式会社 表面処理方法
US20120216955A1 (en) * 2011-02-25 2012-08-30 Toshiba Materials Co., Ltd. Plasma processing apparatus
JP5879069B2 (ja) * 2011-08-11 2016-03-08 東京エレクトロン株式会社 プラズマ処理装置の上部電極の製造方法
JP2013095973A (ja) * 2011-11-02 2013-05-20 Tocalo Co Ltd 半導体製造装置用部材
US9212099B2 (en) * 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
JP2012129549A (ja) * 2012-03-06 2012-07-05 Tokyo Electron Ltd 静電チャック部材
JP5526364B2 (ja) * 2012-04-16 2014-06-18 トーカロ株式会社 白色酸化イットリウム溶射皮膜表面の改質方法
US9257285B2 (en) * 2012-08-22 2016-02-09 Infineon Technologies Ag Ion source devices and methods
US20140357092A1 (en) * 2013-06-04 2014-12-04 Lam Research Corporation Chamber wall of a plasma processing apparatus including a flowing protective liquid layer
CN104241069B (zh) * 2013-06-13 2016-11-23 中微半导体设备(上海)有限公司 等离子体装置内具有氧化钇包覆层的部件及其制造方法
US10319568B2 (en) * 2013-11-12 2019-06-11 Tokyo Electron Limited Plasma processing apparatus for performing plasma process for target object
KR102674364B1 (ko) 2015-11-16 2024-06-13 쿠어스 테크, 인코포레이티드 내부식성 부품 및 제조 방법
JP6146841B1 (ja) * 2016-08-04 2017-06-14 日本新工芯技株式会社 リング状電極
CN109844166B (zh) 2016-11-02 2021-11-19 日本钇股份有限公司 成膜用材料及皮膜
WO2018093414A1 (en) * 2016-11-16 2018-05-24 Coorstek, Inc. Corrosion-resistant components and methods of making
CN108122805B (zh) * 2016-11-29 2020-10-16 北京北方华创微电子装备有限公司 去气腔室和半导体加工设备
KR102016615B1 (ko) * 2017-09-14 2019-08-30 (주)코미코 내플라즈마 특성이 향상된 플라즈마 에칭 장치용 부재 및 그 제조 방법
US20190119815A1 (en) * 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering
CN110512178B (zh) * 2018-05-22 2021-08-13 北京北方华创微电子装备有限公司 腔室内衬、工艺腔室和半导体处理设备
JP7097809B2 (ja) * 2018-12-28 2022-07-08 東京エレクトロン株式会社 ガス導入構造、処理装置及び処理方法
CN116114051A (zh) * 2020-09-18 2023-05-12 株式会社国际电气 基板处理装置、等离子体发光装置、半导体装置的制造方法以及程序

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JP2761112B2 (ja) * 1991-02-21 1998-06-04 松下電工株式会社 絶縁層付き金属基板およびその製造方法
JP2971369B2 (ja) * 1995-08-31 1999-11-02 トーカロ株式会社 静電チャック部材およびその製造方法
JPH104083A (ja) * 1996-06-17 1998-01-06 Kyocera Corp 半導体製造用耐食性部材
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JP3510993B2 (ja) * 1999-12-10 2004-03-29 トーカロ株式会社 プラズマ処理容器内部材およびその製造方法
TW503449B (en) * 2000-04-18 2002-09-21 Ngk Insulators Ltd Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members
KR100815038B1 (ko) * 2000-12-12 2008-03-18 코니카 미놀타 홀딩스 가부시키가이샤 박막 형성 방법, 박막을 갖는 물품, 광학 필름, 유전체피복 전극 및 플라즈마 방전 처리 장치
JP4051351B2 (ja) * 2004-03-12 2008-02-20 トーカロ株式会社 熱放射性および耐損傷性に優れるｙ２ｏ３溶射皮膜被覆部材およびその製造方法

Cited By (4)

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Publication number Priority date Publication date Assignee Title
TWI686864B (zh) * 2016-12-20 2020-03-01 韓商韓國東海炭素股份有限公司 具覆蓋層間邊界線之沉積層的半導體製造用部件
US11180855B2 (en) 2016-12-20 2021-11-23 Tokai Carbon Korea Co., Ltd. Semiconductor manufacturing component comprising deposition layer covering interlayer boundary and manufacturing method thereof
TWI718799B (zh) * 2018-12-05 2021-02-11 日商京瓷股份有限公司 電漿處理裝置用構件及具備其之電漿處理裝置
TWI759981B (zh) * 2019-11-27 2022-04-01 日商京瓷股份有限公司 耐電漿性構件、電漿處理裝置用零件及電漿處理裝置

Also Published As

Publication number Publication date
JP4996868B2 (ja) 2012-08-08
CN100508116C (zh) 2009-07-01
TWI374492B (enExample) 2012-10-11
JP2007251091A (ja) 2007-09-27
CN101042996A (zh) 2007-09-26
WO2007108549A1 (ja) 2007-09-27
KR100864331B1 (ko) 2008-10-17
KR20070095210A (ko) 2007-09-28

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