JP4996868B2 - プラズマ処理装置およびプラズマ処理方法 - Google Patents

プラズマ処理装置およびプラズマ処理方法 Download PDF

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Publication number
JP4996868B2
JP4996868B2 JP2006076195A JP2006076195A JP4996868B2 JP 4996868 B2 JP4996868 B2 JP 4996868B2 JP 2006076195 A JP2006076195 A JP 2006076195A JP 2006076195 A JP2006076195 A JP 2006076195A JP 4996868 B2 JP4996868 B2 JP 4996868B2
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Prior art keywords
gas
plasma
chamber
treatment
plasma processing
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JP2006076195A
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Japanese (ja)
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JP2007251091A (ja
Inventor
義之 小林
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2006076195A priority Critical patent/JP4996868B2/ja
Priority to TW096108643A priority patent/TW200741857A/zh
Priority to PCT/JP2007/056130 priority patent/WO2007108549A1/ja
Priority to CNB2007101006931A priority patent/CN100508116C/zh
Priority to KR1020070026431A priority patent/KR100864331B1/ko
Priority to US11/688,501 priority patent/US7850864B2/en
Publication of JP2007251091A publication Critical patent/JP2007251091A/ja
Priority to US12/894,975 priority patent/US20110030896A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/18—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Coating By Spraying Or Casting (AREA)
  • ing And Chemical Polishing (AREA)
JP2006076195A 2006-03-20 2006-03-20 プラズマ処理装置およびプラズマ処理方法 Active JP4996868B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2006076195A JP4996868B2 (ja) 2006-03-20 2006-03-20 プラズマ処理装置およびプラズマ処理方法
TW096108643A TW200741857A (en) 2006-03-20 2007-03-13 Plasma treating apparatus and plasma treating method
PCT/JP2007/056130 WO2007108549A1 (ja) 2006-03-20 2007-03-16 プラズマ処理装置およびプラズマ処理方法
KR1020070026431A KR100864331B1 (ko) 2006-03-20 2007-03-19 플라즈마 처리 장치 및 플라즈마 처리 방법
CNB2007101006931A CN100508116C (zh) 2006-03-20 2007-03-19 等离子体处理装置和等离子体处理方法
US11/688,501 US7850864B2 (en) 2006-03-20 2007-03-20 Plasma treating apparatus and plasma treating method
US12/894,975 US20110030896A1 (en) 2006-03-20 2010-09-30 Plasma treating apparatus and plasma treating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006076195A JP4996868B2 (ja) 2006-03-20 2006-03-20 プラズマ処理装置およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
JP2007251091A JP2007251091A (ja) 2007-09-27
JP4996868B2 true JP4996868B2 (ja) 2012-08-08

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JP2006076195A Active JP4996868B2 (ja) 2006-03-20 2006-03-20 プラズマ処理装置およびプラズマ処理方法

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JP (1) JP4996868B2 (enExample)
KR (1) KR100864331B1 (enExample)
CN (1) CN100508116C (enExample)
TW (1) TW200741857A (enExample)
WO (1) WO2007108549A1 (enExample)

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JP2008266724A (ja) * 2007-04-20 2008-11-06 Shin Etsu Chem Co Ltd 溶射被膜の表面処理方法及び表面処理された溶射被膜
JP2009301783A (ja) * 2008-06-11 2009-12-24 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
CN101740329B (zh) * 2008-11-17 2012-12-05 中芯国际集成电路制造(上海)有限公司 等离子处理方法
JP5415853B2 (ja) * 2009-07-10 2014-02-12 東京エレクトロン株式会社 表面処理方法
US20120216955A1 (en) * 2011-02-25 2012-08-30 Toshiba Materials Co., Ltd. Plasma processing apparatus
JP5879069B2 (ja) * 2011-08-11 2016-03-08 東京エレクトロン株式会社 プラズマ処理装置の上部電極の製造方法
JP2013095973A (ja) * 2011-11-02 2013-05-20 Tocalo Co Ltd 半導体製造装置用部材
US9212099B2 (en) * 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
JP2012129549A (ja) * 2012-03-06 2012-07-05 Tokyo Electron Ltd 静電チャック部材
JP5526364B2 (ja) * 2012-04-16 2014-06-18 トーカロ株式会社 白色酸化イットリウム溶射皮膜表面の改質方法
US9257285B2 (en) * 2012-08-22 2016-02-09 Infineon Technologies Ag Ion source devices and methods
US20140357092A1 (en) * 2013-06-04 2014-12-04 Lam Research Corporation Chamber wall of a plasma processing apparatus including a flowing protective liquid layer
CN104241069B (zh) * 2013-06-13 2016-11-23 中微半导体设备(上海)有限公司 等离子体装置内具有氧化钇包覆层的部件及其制造方法
US10319568B2 (en) * 2013-11-12 2019-06-11 Tokyo Electron Limited Plasma processing apparatus for performing plasma process for target object
EP3377318A1 (en) 2015-11-16 2018-09-26 Coorstek Inc. Corrosion-resistant components and methods of making
JP6146841B1 (ja) * 2016-08-04 2017-06-14 日本新工芯技株式会社 リング状電極
WO2018083854A1 (ja) 2016-11-02 2018-05-11 日本イットリウム株式会社 成膜用材料及び皮膜
WO2018093414A1 (en) * 2016-11-16 2018-05-24 Coorstek, Inc. Corrosion-resistant components and methods of making
CN108122805B (zh) * 2016-11-29 2020-10-16 北京北方华创微电子装备有限公司 去气腔室和半导体加工设备
KR20180071695A (ko) * 2016-12-20 2018-06-28 주식회사 티씨케이 층간 경계를 덮는 증착층을 포함하는 반도체 제조용 부품 및 그 제조방법
KR102016615B1 (ko) * 2017-09-14 2019-08-30 (주)코미코 내플라즈마 특성이 향상된 플라즈마 에칭 장치용 부재 및 그 제조 방법
US20190119815A1 (en) * 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering
CN110512178B (zh) * 2018-05-22 2021-08-13 北京北方华创微电子装备有限公司 腔室内衬、工艺腔室和半导体处理设备
US12065727B2 (en) * 2018-12-05 2024-08-20 Kyocera Corporation Member for plasma processing device and plasma processing device provided with same
JP7097809B2 (ja) * 2018-12-28 2022-07-08 東京エレクトロン株式会社 ガス導入構造、処理装置及び処理方法
JP7329619B2 (ja) * 2019-11-27 2023-08-18 京セラ株式会社 耐プラズマ性部材、プラズマ処理装置用部品およびプラズマ処理装置
WO2022059188A1 (ja) * 2020-09-18 2022-03-24 株式会社Kokusai Electric 基板処理装置、プラズマ発光装置、半導体装置の製造方法及びプログラム

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Also Published As

Publication number Publication date
TW200741857A (en) 2007-11-01
JP2007251091A (ja) 2007-09-27
KR20070095210A (ko) 2007-09-28
KR100864331B1 (ko) 2008-10-17
TWI374492B (enExample) 2012-10-11
CN100508116C (zh) 2009-07-01
WO2007108549A1 (ja) 2007-09-27
CN101042996A (zh) 2007-09-26

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