KR100862941B1 - 과전압보호부를 갖는 트렌치 ｄｍｏｓ트랜지스터 및 트렌치 ｄｍｏｓ트랜지스터 제조방법 - Google Patents

과전압보호부를 갖는 트렌치 ｄｍｏｓ트랜지스터 및 트렌치 ｄｍｏｓ트랜지스터 제조방법 Download PDF

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KR100862941B1
KR100862941B1 KR1020037015126A KR20037015126A KR100862941B1 KR 100862941 B1 KR100862941 B1 KR 100862941B1 KR 1020037015126 A KR1020037015126 A KR 1020037015126A KR 20037015126 A KR20037015126 A KR 20037015126A KR 100862941 B1 KR100862941 B1 KR 100862941B1
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South Korea
Prior art keywords
trench
dmos transistor
layer
body region
undoped polysilicon
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Korean (ko)
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KR20040030621A (ko
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퓨-이우안 시에
군 총 소
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제네럴 세미컨덕터, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/80—Arrangements for protection of devices protecting against overcurrent or overload, e.g. fuses or shunts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020037015126A 2001-05-22 2002-05-22 과전압보호부를 갖는 트렌치 ｄｍｏｓ트랜지스터 및 트렌치 ｄｍｏｓ트랜지스터 제조방법 Expired - Lifetime KR100862941B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/862,541 US6657256B2 (en) 2001-05-22 2001-05-22 Trench DMOS transistor having a zener diode for protection from electro-static discharge
US09/862,541 2001-05-22
PCT/US2002/016169 WO2002095836A1 (en) 2001-05-22 2002-05-22 Dmos with zener diode for esd protection

Publications (2)

Publication Number Publication Date
KR20040030621A KR20040030621A (ko) 2004-04-09
KR100862941B1 true KR100862941B1 (ko) 2008-10-14

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KR1020037015126A Expired - Lifetime KR100862941B1 (ko) 2001-05-22 2002-05-22 과전압보호부를 갖는 트렌치 ｄｍｏｓ트랜지스터 및 트렌치 ｄｍｏｓ트랜지스터 제조방법

Country Status (7)

Country Link
US (2) US6657256B2 (https=)
EP (1) EP1396031A4 (https=)
JP (1) JP4975944B2 (https=)
KR (1) KR100862941B1 (https=)
CN (1) CN100399583C (https=)
TW (1) TW546845B (https=)
WO (1) WO2002095836A1 (https=)

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KR101395161B1 (ko) * 2011-03-11 2014-05-27 소이텍 진성 반도체층을 갖는 웨이퍼

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DE102004026100B4 (de) * 2004-05-25 2007-10-25 Infineon Technologies Ag ESD-Schutzstrukturen für Halbleiterbauelemente
JP4907862B2 (ja) * 2004-12-10 2012-04-04 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7544545B2 (en) * 2005-12-28 2009-06-09 Vishay-Siliconix Trench polysilicon diode
JP4978014B2 (ja) * 2006-01-30 2012-07-18 サンケン電気株式会社 半導体発光装置及びその製造方法
US7629646B2 (en) 2006-08-16 2009-12-08 Force Mos Technology Co., Ltd. Trench MOSFET with terraced gate and manufacturing method thereof
US20080042222A1 (en) * 2006-08-16 2008-02-21 Force Mos Technology Co., Ltd. Trench mosfet with copper metal connections
US20080042208A1 (en) * 2006-08-16 2008-02-21 Force Mos Technology Co., Ltd. Trench mosfet with esd trench capacitor
JP4249774B2 (ja) * 2006-10-13 2009-04-08 エルピーダメモリ株式会社 半導体装置の製造方法
US8093621B2 (en) 2008-12-23 2012-01-10 Power Integrations, Inc. VTS insulated gate bipolar transistor
JP5196794B2 (ja) 2007-01-29 2013-05-15 三菱電機株式会社 半導体装置
KR100827479B1 (ko) * 2007-05-18 2008-05-06 주식회사 동부하이텍 반도체 소자의 정전 방지 회로 구조 및 이의 제조 방법
US7825431B2 (en) * 2007-12-31 2010-11-02 Alpha & Omega Semicondictor, Ltd. Reduced mask configuration for power MOSFETs with electrostatic discharge (ESD) circuit protection
US20090212354A1 (en) * 2008-02-23 2009-08-27 Force Mos Technology Co. Ltd Trench moseft with trench gates underneath contact areas of esd diode for prevention of gate and source shortate
KR200449539Y1 (ko) * 2008-05-14 2010-07-20 (주)홀랜드코리아 투광판이 부설된 매입형 천정등
US20100155831A1 (en) * 2008-12-20 2010-06-24 Power Integrations, Inc. Deep trench insulated gate bipolar transistor
US7871882B2 (en) * 2008-12-20 2011-01-18 Power Integrations, Inc. Method of fabricating a deep trench insulated gate bipolar transistor
CN102074561B (zh) * 2009-11-24 2013-05-29 力士科技股份有限公司 一种沟槽金属氧化物半导体场效应管及其制造方法
CN101901829A (zh) * 2010-05-07 2010-12-01 深圳深爱半导体有限公司 静电释放保护结构及制造方法
CN102263105B (zh) * 2010-05-26 2013-04-03 茂达电子股份有限公司 沟渠式半导体组件及其制作方法
CN102376568B (zh) * 2010-08-19 2015-08-05 北大方正集团有限公司 在深沟槽肖特基二极管晶圆的深沟槽内淀积多晶硅的方法
CN103928513B (zh) * 2013-01-15 2017-03-29 无锡华润上华半导体有限公司 一种沟槽dmos器件及其制作方法
US9728529B2 (en) 2014-04-14 2017-08-08 Infineon Technologies Dresden Gmbh Semiconductor device with electrostatic discharge protection structure
CN105185709A (zh) * 2014-05-28 2015-12-23 北大方正集团有限公司 在沟槽型vdmos中制作防静电结构的方法
EP2996156A1 (en) * 2014-09-10 2016-03-16 Ipdia Semiconductor device comprising a diode and electrostatic discharge protection device
CN106653842B (zh) 2015-10-28 2019-05-17 无锡华润上华科技有限公司 一种具有静电释放保护结构的半导体器件
US10522674B2 (en) * 2016-05-18 2019-12-31 Rohm Co., Ltd. Semiconductor with unified transistor structure and voltage regulator diode
HK1244177A2 (zh) * 2018-03-27 2018-07-27 蒙若贤 用於沟道型dmos的集成堆叠在沟道中的防静电网络
US11869986B2 (en) 2021-08-27 2024-01-09 Texas Instruments Incorporated Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection device
CN116344347B (zh) * 2023-05-05 2025-10-21 浙江萃锦半导体有限公司 一种提升沟槽型sic mosfet器件开关速度的方法

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WO2000065646A1 (en) * 1999-04-22 2000-11-02 Williams Richard K A super-self-aligned trench-gate dmos with reduced on-resistance

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JPH11251594A (ja) * 1997-12-31 1999-09-17 Siliconix Inc 電圧クランプされたゲ―トを有するパワ―ｍｏｓｆｅｔ
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WO2000065646A1 (en) * 1999-04-22 2000-11-02 Williams Richard K A super-self-aligned trench-gate dmos with reduced on-resistance
US6413822B2 (en) 1999-04-22 2002-07-02 Advanced Analogic Technologies, Inc. Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer

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KR101395161B1 (ko) * 2011-03-11 2014-05-27 소이텍 진성 반도체층을 갖는 웨이퍼

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CN100399583C (zh) 2008-07-02
JP4975944B2 (ja) 2012-07-11
EP1396031A1 (en) 2004-03-10
US20040097042A1 (en) 2004-05-20
KR20040030621A (ko) 2004-04-09
JP2004528719A (ja) 2004-09-16
US6657256B2 (en) 2003-12-02
US6884683B2 (en) 2005-04-26
EP1396031A4 (en) 2008-04-09
WO2002095836A1 (en) 2002-11-28
US20020175367A1 (en) 2002-11-28
TW546845B (en) 2003-08-11
CN1524298A (zh) 2004-08-25

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