CN100399583C - 具有静电放电保护的齐纳二极管的双扩散金属氧化物半导体场效应晶体管 - Google Patents

具有静电放电保护的齐纳二极管的双扩散金属氧化物半导体场效应晶体管 Download PDF

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CN100399583C
CN100399583C CNB028104285A CN02810428A CN100399583C CN 100399583 C CN100399583 C CN 100399583C CN B028104285 A CNB028104285 A CN B028104285A CN 02810428 A CN02810428 A CN 02810428A CN 100399583 C CN100399583 C CN 100399583C
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transistor
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CN1524298A (zh
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石甫渊
苏根政
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General Semiconductor Inc
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General Semiconductor Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/80—Arrangements for protection of devices protecting against overcurrent or overload, e.g. fuses or shunts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CNB028104285A 2001-05-22 2002-05-22 具有静电放电保护的齐纳二极管的双扩散金属氧化物半导体场效应晶体管 Expired - Fee Related CN100399583C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/862,541 US6657256B2 (en) 2001-05-22 2001-05-22 Trench DMOS transistor having a zener diode for protection from electro-static discharge
US09/862,541 2001-05-22

Publications (2)

Publication Number Publication Date
CN1524298A CN1524298A (zh) 2004-08-25
CN100399583C true CN100399583C (zh) 2008-07-02

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CNB028104285A Expired - Fee Related CN100399583C (zh) 2001-05-22 2002-05-22 具有静电放电保护的齐纳二极管的双扩散金属氧化物半导体场效应晶体管

Country Status (7)

Country Link
US (2) US6657256B2 (https=)
EP (1) EP1396031A4 (https=)
JP (1) JP4975944B2 (https=)
KR (1) KR100862941B1 (https=)
CN (1) CN100399583C (https=)
TW (1) TW546845B (https=)
WO (1) WO2002095836A1 (https=)

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CN101901829A (zh) * 2010-05-07 2010-12-01 深圳深爱半导体有限公司 静电释放保护结构及制造方法
CN105185709A (zh) * 2014-05-28 2015-12-23 北大方正集团有限公司 在沟槽型vdmos中制作防静电结构的方法

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US7544545B2 (en) * 2005-12-28 2009-06-09 Vishay-Siliconix Trench polysilicon diode
JP4978014B2 (ja) * 2006-01-30 2012-07-18 サンケン電気株式会社 半導体発光装置及びその製造方法
US7629646B2 (en) 2006-08-16 2009-12-08 Force Mos Technology Co., Ltd. Trench MOSFET with terraced gate and manufacturing method thereof
US20080042222A1 (en) * 2006-08-16 2008-02-21 Force Mos Technology Co., Ltd. Trench mosfet with copper metal connections
US20080042208A1 (en) * 2006-08-16 2008-02-21 Force Mos Technology Co., Ltd. Trench mosfet with esd trench capacitor
JP4249774B2 (ja) * 2006-10-13 2009-04-08 エルピーダメモリ株式会社 半導体装置の製造方法
US8093621B2 (en) 2008-12-23 2012-01-10 Power Integrations, Inc. VTS insulated gate bipolar transistor
JP5196794B2 (ja) 2007-01-29 2013-05-15 三菱電機株式会社 半導体装置
KR100827479B1 (ko) * 2007-05-18 2008-05-06 주식회사 동부하이텍 반도체 소자의 정전 방지 회로 구조 및 이의 제조 방법
US7825431B2 (en) * 2007-12-31 2010-11-02 Alpha & Omega Semicondictor, Ltd. Reduced mask configuration for power MOSFETs with electrostatic discharge (ESD) circuit protection
US20090212354A1 (en) * 2008-02-23 2009-08-27 Force Mos Technology Co. Ltd Trench moseft with trench gates underneath contact areas of esd diode for prevention of gate and source shortate
KR200449539Y1 (ko) * 2008-05-14 2010-07-20 (주)홀랜드코리아 투광판이 부설된 매입형 천정등
US20100155831A1 (en) * 2008-12-20 2010-06-24 Power Integrations, Inc. Deep trench insulated gate bipolar transistor
US7871882B2 (en) * 2008-12-20 2011-01-18 Power Integrations, Inc. Method of fabricating a deep trench insulated gate bipolar transistor
CN102074561B (zh) * 2009-11-24 2013-05-29 力士科技股份有限公司 一种沟槽金属氧化物半导体场效应管及其制造方法
CN102263105B (zh) * 2010-05-26 2013-04-03 茂达电子股份有限公司 沟渠式半导体组件及其制作方法
CN102376568B (zh) * 2010-08-19 2015-08-05 北大方正集团有限公司 在深沟槽肖特基二极管晶圆的深沟槽内淀积多晶硅的方法
EP2498280B1 (en) * 2011-03-11 2020-04-29 Soitec DRAM with trench capacitors and logic back-biased transistors integrated on an SOI substrate comprising an intrinsic semiconductor layer and manufacturing method thereof
CN103928513B (zh) * 2013-01-15 2017-03-29 无锡华润上华半导体有限公司 一种沟槽dmos器件及其制作方法
US9728529B2 (en) 2014-04-14 2017-08-08 Infineon Technologies Dresden Gmbh Semiconductor device with electrostatic discharge protection structure
EP2996156A1 (en) * 2014-09-10 2016-03-16 Ipdia Semiconductor device comprising a diode and electrostatic discharge protection device
CN106653842B (zh) 2015-10-28 2019-05-17 无锡华润上华科技有限公司 一种具有静电释放保护结构的半导体器件
US10522674B2 (en) * 2016-05-18 2019-12-31 Rohm Co., Ltd. Semiconductor with unified transistor structure and voltage regulator diode
HK1244177A2 (zh) * 2018-03-27 2018-07-27 蒙若贤 用於沟道型dmos的集成堆叠在沟道中的防静电网络
US11869986B2 (en) 2021-08-27 2024-01-09 Texas Instruments Incorporated Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection device
CN116344347B (zh) * 2023-05-05 2025-10-21 浙江萃锦半导体有限公司 一种提升沟槽型sic mosfet器件开关速度的方法

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US5770878A (en) * 1996-04-10 1998-06-23 Harris Corporation Trench MOS gate device
US5866931A (en) * 1993-04-14 1999-02-02 Siliconix Incorporated DMOS power transistor with reduced number of contacts using integrated body-source connections
WO2000065646A1 (en) * 1999-04-22 2000-11-02 Williams Richard K A super-self-aligned trench-gate dmos with reduced on-resistance

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US5866931A (en) * 1993-04-14 1999-02-02 Siliconix Incorporated DMOS power transistor with reduced number of contacts using integrated body-source connections
US5770878A (en) * 1996-04-10 1998-06-23 Harris Corporation Trench MOS gate device
US5602046A (en) * 1996-04-12 1997-02-11 National Semiconductor Corporation Integrated zener diode protection structures and fabrication methods for DMOS power devices
WO2000065646A1 (en) * 1999-04-22 2000-11-02 Williams Richard K A super-self-aligned trench-gate dmos with reduced on-resistance

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101901829A (zh) * 2010-05-07 2010-12-01 深圳深爱半导体有限公司 静电释放保护结构及制造方法
CN105185709A (zh) * 2014-05-28 2015-12-23 北大方正集团有限公司 在沟槽型vdmos中制作防静电结构的方法

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Publication number Publication date
JP4975944B2 (ja) 2012-07-11
EP1396031A1 (en) 2004-03-10
US20040097042A1 (en) 2004-05-20
KR20040030621A (ko) 2004-04-09
JP2004528719A (ja) 2004-09-16
US6657256B2 (en) 2003-12-02
US6884683B2 (en) 2005-04-26
EP1396031A4 (en) 2008-04-09
WO2002095836A1 (en) 2002-11-28
KR100862941B1 (ko) 2008-10-14
US20020175367A1 (en) 2002-11-28
TW546845B (en) 2003-08-11
CN1524298A (zh) 2004-08-25

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