KR100845774B1 - 반도체 메모리 장치 및 이를 이용한 전압 제어 방법 - Google Patents

반도체 메모리 장치 및 이를 이용한 전압 제어 방법 Download PDF

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Publication number
KR100845774B1
KR100845774B1 KR1020060099652A KR20060099652A KR100845774B1 KR 100845774 B1 KR100845774 B1 KR 100845774B1 KR 1020060099652 A KR1020060099652 A KR 1020060099652A KR 20060099652 A KR20060099652 A KR 20060099652A KR 100845774 B1 KR100845774 B1 KR 100845774B1
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KR
South Korea
Prior art keywords
signal
burn
voltage
active
control signal
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Expired - Fee Related
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KR1020060099652A
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English (en)
Korean (ko)
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KR20080033683A (ko
Inventor
최준기
신윤재
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주식회사 하이닉스반도체
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Priority to KR1020060099652A priority Critical patent/KR100845774B1/ko
Priority to US11/822,358 priority patent/US7502268B2/en
Priority to JP2007214164A priority patent/JP2008097804A/ja
Publication of KR20080033683A publication Critical patent/KR20080033683A/ko
Application granted granted Critical
Publication of KR100845774B1 publication Critical patent/KR100845774B1/ko
Priority to US12/364,670 priority patent/US7916566B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C2029/1202—Word line control

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
KR1020060099652A 2006-10-13 2006-10-13 반도체 메모리 장치 및 이를 이용한 전압 제어 방법 Expired - Fee Related KR100845774B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020060099652A KR100845774B1 (ko) 2006-10-13 2006-10-13 반도체 메모리 장치 및 이를 이용한 전압 제어 방법
US11/822,358 US7502268B2 (en) 2006-10-13 2007-07-05 Voltage control apparatus and method of controlling voltage using the same
JP2007214164A JP2008097804A (ja) 2006-10-13 2007-08-20 電圧制御装置および電圧制御方法
US12/364,670 US7916566B2 (en) 2006-10-13 2009-02-03 Voltage control apparatus and method of controlling voltage using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060099652A KR100845774B1 (ko) 2006-10-13 2006-10-13 반도체 메모리 장치 및 이를 이용한 전압 제어 방법

Publications (2)

Publication Number Publication Date
KR20080033683A KR20080033683A (ko) 2008-04-17
KR100845774B1 true KR100845774B1 (ko) 2008-07-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060099652A Expired - Fee Related KR100845774B1 (ko) 2006-10-13 2006-10-13 반도체 메모리 장치 및 이를 이용한 전압 제어 방법

Country Status (3)

Country Link
US (2) US7502268B2 (cg-RX-API-DMAC10.html)
JP (1) JP2008097804A (cg-RX-API-DMAC10.html)
KR (1) KR100845774B1 (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100845776B1 (ko) * 2006-11-23 2008-07-14 주식회사 하이닉스반도체 반도체 메모리 장치의 센스앰프 제어회로 및 방법
KR100955682B1 (ko) * 2008-04-28 2010-05-03 주식회사 하이닉스반도체 센싱 지연회로 및 이를 이용한 반도체 메모리 장치
KR101539402B1 (ko) * 2008-10-23 2015-07-27 삼성전자주식회사 반도체 패키지
KR101047003B1 (ko) * 2009-06-26 2011-07-06 주식회사 하이닉스반도체 프리차지신호 생성회로 및 반도체 메모리 장치

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07105144B2 (ja) * 1985-05-20 1995-11-13 富士通株式会社 半導体記憶回路
JPS62228177A (ja) * 1986-03-29 1987-10-07 Toshiba Corp 半導体集積回路用許容入力電圧検査回路
US5402375A (en) * 1987-11-24 1995-03-28 Hitachi, Ltd Voltage converter arrangement for a semiconductor memory
JPH01162296A (ja) * 1987-12-19 1989-06-26 Sony Corp Ｄｒａｍ
JP2737293B2 (ja) * 1989-08-30 1998-04-08 日本電気株式会社 Ｍｏｓ型半導体記憶装置
JP2821278B2 (ja) * 1991-04-15 1998-11-05 日本電気アイシーマイコンシステム株式会社 半導体集積回路
KR0119887B1 (ko) * 1994-06-08 1997-10-30 김광호 반도체 메모리장치의 웨이퍼 번-인 테스트 회로
US5901105A (en) * 1995-04-05 1999-05-04 Ong; Adrian E Dynamic random access memory having decoding circuitry for partial memory blocks
JP3607760B2 (ja) 1995-10-13 2005-01-05 富士通株式会社 半導体集積回路装置
JPH10106257A (ja) * 1996-09-06 1998-04-24 Texas Instr Inc <Ti> 集積回路のメモリ装置及びプリチャージ動作を与える方法
JP3742191B2 (ja) * 1997-06-06 2006-02-01 株式会社東芝 半導体集積回路装置
JP4090570B2 (ja) * 1998-06-02 2008-05-28 株式会社ルネサステクノロジ 半導体装置、データ処理システム及び不揮発性メモリセルの閾値変更方法
KR100281693B1 (ko) * 1998-09-02 2001-02-15 윤종용 고속 삼상 부스터 회로
JP3863313B2 (ja) * 1999-03-19 2006-12-27 富士通株式会社 半導体記憶装置
JP4555416B2 (ja) * 1999-09-22 2010-09-29 富士通セミコンダクター株式会社 半導体集積回路およびその制御方法
US6563746B2 (en) * 1999-11-09 2003-05-13 Fujitsu Limited Circuit for entering/exiting semiconductor memory device into/from low power consumption mode and method of controlling internal circuit at low power consumption mode
KR100333710B1 (ko) * 1999-12-28 2002-04-22 박종섭 안정적인 리드 동작을 위한 디디알 에스디램
JP3856424B2 (ja) * 2000-12-25 2006-12-13 株式会社東芝 半導体記憶装置
JP2002231000A (ja) * 2001-02-05 2002-08-16 Mitsubishi Electric Corp 半導体記憶装置
KR100505702B1 (ko) 2003-08-20 2005-08-02 삼성전자주식회사 웨이퍼 테스트와 포스트 패키지 테스트에서 선택적으로프로그램 가능한 반도체 메모리 장치의 리페어 장치 및 그리페어 방법
KR100586555B1 (ko) * 2005-01-17 2006-06-08 주식회사 하이닉스반도체 내부전압 생성 제어회로 및 이를 이용한 내부전압 생성회로

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"DEEP POWER DOWN", Technical Note No. E0598E21, Elpida Memory Inc., 2006. (2006년 5월 공개)

Also Published As

Publication number Publication date
US7502268B2 (en) 2009-03-10
KR20080033683A (ko) 2008-04-17
US20090141572A1 (en) 2009-06-04
US7916566B2 (en) 2011-03-29
US20080089148A1 (en) 2008-04-17
JP2008097804A (ja) 2008-04-24

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