KR100830666B1 - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

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Publication number
KR100830666B1
KR100830666B1 KR1020010074455A KR20010074455A KR100830666B1 KR 100830666 B1 KR100830666 B1 KR 100830666B1 KR 1020010074455 A KR1020010074455 A KR 1020010074455A KR 20010074455 A KR20010074455 A KR 20010074455A KR 100830666 B1 KR100830666 B1 KR 100830666B1
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South Korea
Prior art keywords
wiring
insulating layer
connection hole
film
insulating film
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Expired - Fee Related
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KR1020010074455A
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English (en)
Korean (ko)
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KR20020042458A (ko
Inventor
오오시마타카유키
미야자키히로시
아오키히데오
오오모리카즈토시
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
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Publication of KR20020042458A publication Critical patent/KR20020042458A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/0888—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures wherein via-level dielectrics are compositionally different than trench-level dielectrics

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
KR1020010074455A 2000-11-29 2001-11-28 반도체장치 및 그 제조방법 Expired - Fee Related KR100830666B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2000-00362462 2000-11-29
JP2000362462A JP2002164428A (ja) 2000-11-29 2000-11-29 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
KR20020042458A KR20020042458A (ko) 2002-06-05
KR100830666B1 true KR100830666B1 (ko) 2008-05-20

Family

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Family Applications (1)

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KR1020010074455A Expired - Fee Related KR100830666B1 (ko) 2000-11-29 2001-11-28 반도체장치 및 그 제조방법

Country Status (4)

Country Link
US (1) US6812127B2 (https=)
JP (1) JP2002164428A (https=)
KR (1) KR100830666B1 (https=)
TW (1) TW541657B (https=)

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CN100352036C (zh) 2002-10-17 2007-11-28 株式会社瑞萨科技 半导体器件及其制造方法
US6917108B2 (en) * 2002-11-14 2005-07-12 International Business Machines Corporation Reliable low-k interconnect structure with hybrid dielectric
JP2004165559A (ja) * 2002-11-15 2004-06-10 Toshiba Corp 半導体装置
JP4489345B2 (ja) * 2002-12-13 2010-06-23 株式会社ルネサステクノロジ 半導体装置の製造方法
JP4454242B2 (ja) 2003-03-25 2010-04-21 株式会社ルネサステクノロジ 半導体装置およびその製造方法
NL1023275C2 (nl) * 2003-04-25 2004-10-27 Cavendish Kinetics Ltd Werkwijze voor het vervaardigen van een micro-mechanisch element.
CN1327508C (zh) * 2003-04-28 2007-07-18 富士通株式会社 半导体装置的制造方法
WO2004105123A1 (ja) * 2003-05-21 2004-12-02 Fujitsu Limited 半導体装置
US7096450B2 (en) * 2003-06-28 2006-08-22 International Business Machines Corporation Enhancement of performance of a conductive wire in a multilayered substrate
TWI285938B (en) * 2003-08-28 2007-08-21 Fujitsu Ltd Semiconductor device
KR100605505B1 (ko) * 2004-06-04 2006-07-31 삼성전자주식회사 버퍼막 패턴을 갖는 반도체 장치들 및 그들의 형성방법들
JP2006024811A (ja) * 2004-07-09 2006-01-26 Sony Corp 半導体装置の製造方法
JP4185478B2 (ja) * 2004-07-23 2008-11-26 長野計器株式会社 歪検出器およびその製造方法
JP2006140404A (ja) * 2004-11-15 2006-06-01 Renesas Technology Corp 半導体装置
JP2006210508A (ja) * 2005-01-26 2006-08-10 Sony Corp 半導体装置およびその製造方法
US7414275B2 (en) * 2005-06-24 2008-08-19 International Business Machines Corporation Multi-level interconnections for an integrated circuit chip
JP2007019188A (ja) * 2005-07-06 2007-01-25 Renesas Technology Corp 半導体集積回路装置およびその製造方法
JP2007123509A (ja) * 2005-10-27 2007-05-17 Seiko Epson Corp 半導体装置およびその製造方法
US20070096170A1 (en) * 2005-11-02 2007-05-03 International Business Machines Corporation Low modulus spacers for channel stress enhancement
US8013342B2 (en) * 2007-11-14 2011-09-06 International Business Machines Corporation Double-sided integrated circuit chips
US7670927B2 (en) * 2006-05-16 2010-03-02 International Business Machines Corporation Double-sided integrated circuit chips
US7602027B2 (en) * 2006-12-29 2009-10-13 Semiconductor Components Industries, L.L.C. Semiconductor component and method of manufacture
DE102007037858B4 (de) 2007-08-10 2012-04-19 Infineon Technologies Ag Halbleiterbauelement mit verbessertem dynamischen Verhalten
TWI419268B (zh) * 2007-09-21 2013-12-11 兆裝微股份有限公司 半導體裝置及其製造方法
US8587124B2 (en) 2007-09-21 2013-11-19 Teramikros, Inc. Semiconductor device having low dielectric insulating film and manufacturing method of the same
US20090079072A1 (en) * 2007-09-21 2009-03-26 Casio Computer Co., Ltd. Semiconductor device having low dielectric insulating film and manufacturing method of the same
JP4666028B2 (ja) * 2008-03-31 2011-04-06 カシオ計算機株式会社 半導体装置
JP5559775B2 (ja) * 2009-04-30 2014-07-23 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8304863B2 (en) 2010-02-09 2012-11-06 International Business Machines Corporation Electromigration immune through-substrate vias
US8354339B2 (en) * 2010-07-20 2013-01-15 International Business Machines Corporation Methods to form self-aligned permanent on-chip interconnect structures
US8642460B2 (en) * 2011-06-08 2014-02-04 International Business Machines Corporation Semiconductor switching device and method of making the same
CN102332425A (zh) * 2011-09-23 2012-01-25 复旦大学 一种提升铜互连技术中抗电迁移特性的方法
US9032615B2 (en) 2012-07-31 2015-05-19 Freescale Semiconductor, Inc. Method for forming an electrical connection between metal layers
US8640072B1 (en) 2012-07-31 2014-01-28 Freescale Semiconductor, Inc. Method for forming an electrical connection between metal layers
TWI613709B (zh) * 2013-02-20 2018-02-01 財團法人工業技術研究院 半導體元件結構及其製造方法與應用其之畫素結構
US10541204B2 (en) * 2015-10-20 2020-01-21 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnection structure and method of forming the same
TWI590350B (zh) * 2016-06-30 2017-07-01 欣興電子股份有限公司 線路重分佈結構的製造方法與線路重分佈結構單元
US9735015B1 (en) * 2016-12-05 2017-08-15 United Microelectronics Corporation Fabricating method of semiconductor structure
KR102307127B1 (ko) * 2017-06-14 2021-10-05 삼성전자주식회사 반도체 소자
US20200312768A1 (en) * 2019-03-27 2020-10-01 Intel Corporation Controlled organic layers to enhance adhesion to organic dielectrics and process for forming such
KR102859459B1 (ko) * 2020-09-02 2025-09-12 삼성전자주식회사 배선 구조체 및 이를 포함하는 반도체 패키지

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Publication number Publication date
TW541657B (en) 2003-07-11
US20020100984A1 (en) 2002-08-01
US6812127B2 (en) 2004-11-02
JP2002164428A (ja) 2002-06-07
KR20020042458A (ko) 2002-06-05

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