KR100829616B1 - 채널 실리콘막 형성 방법 및 이를 이용한 스택형 반도체소자 제조 방법 - Google Patents

채널 실리콘막 형성 방법 및 이를 이용한 스택형 반도체소자 제조 방법 Download PDF

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Publication number
KR100829616B1
KR100829616B1 KR1020060134399A KR20060134399A KR100829616B1 KR 100829616 B1 KR100829616 B1 KR 100829616B1 KR 1020060134399 A KR1020060134399 A KR 1020060134399A KR 20060134399 A KR20060134399 A KR 20060134399A KR 100829616 B1 KR100829616 B1 KR 100829616B1
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South Korea
Prior art keywords
single crystal
silicon film
crystal silicon
film
pattern
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Expired - Fee Related
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KR1020060134399A
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English (en)
Korean (ko)
Inventor
임종흔
홍창기
윤보언
윤성규
최석헌
한상엽
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삼성전자주식회사
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Priority to KR1020060134399A priority Critical patent/KR100829616B1/ko
Priority to US11/962,742 priority patent/US7678625B2/en
Priority to DE102007063551A priority patent/DE102007063551A1/de
Priority to JP2007336416A priority patent/JP5291929B2/ja
Priority to CNA2007101691543A priority patent/CN101256960A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
KR1020060134399A 2006-12-27 2006-12-27 채널 실리콘막 형성 방법 및 이를 이용한 스택형 반도체소자 제조 방법 Expired - Fee Related KR100829616B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020060134399A KR100829616B1 (ko) 2006-12-27 2006-12-27 채널 실리콘막 형성 방법 및 이를 이용한 스택형 반도체소자 제조 방법
US11/962,742 US7678625B2 (en) 2006-12-27 2007-12-21 Methods of fabricating semiconductor devices including channel layers having improved defect density and surface roughness characteristics
DE102007063551A DE102007063551A1 (de) 2006-12-27 2007-12-21 Verfahren zur Herstellung eines Halbleiterbauelements
JP2007336416A JP5291929B2 (ja) 2006-12-27 2007-12-27 チャンネル膜を有する半導体装置の製造方法
CNA2007101691543A CN101256960A (zh) 2006-12-27 2007-12-27 包括沟道层的半导体器件的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060134399A KR100829616B1 (ko) 2006-12-27 2006-12-27 채널 실리콘막 형성 방법 및 이를 이용한 스택형 반도체소자 제조 방법

Publications (1)

Publication Number Publication Date
KR100829616B1 true KR100829616B1 (ko) 2008-05-14

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KR1020060134399A Expired - Fee Related KR100829616B1 (ko) 2006-12-27 2006-12-27 채널 실리콘막 형성 방법 및 이를 이용한 스택형 반도체소자 제조 방법

Country Status (5)

Country Link
US (1) US7678625B2 (https=)
JP (1) JP5291929B2 (https=)
KR (1) KR100829616B1 (https=)
CN (1) CN101256960A (https=)
DE (1) DE102007063551A1 (https=)

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