KR100777901B1 - 화학 기계 연마용 수계 분산체 - Google Patents
화학 기계 연마용 수계 분산체 Download PDFInfo
- Publication number
- KR100777901B1 KR100777901B1 KR1020010015740A KR20010015740A KR100777901B1 KR 100777901 B1 KR100777901 B1 KR 100777901B1 KR 1020010015740 A KR1020010015740 A KR 1020010015740A KR 20010015740 A KR20010015740 A KR 20010015740A KR 100777901 B1 KR100777901 B1 KR 100777901B1
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- Prior art keywords
- aqueous dispersion
- chemical mechanical
- mechanical polishing
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- particles
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Weting (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
실시예 | ||||||||
1 | 2 | 3 | 4 | 5 | 6 | 7 | ||
지립 | 종류 | 복합입자 | 퓸드 실리카 | 복합입자 | ||||
배합량 (부) | 5 | 5 | 5 | |||||
스크래치 방지제 | 종류 | 에말겐 120 | HMT | 에말겐 120 + HMT | 에말겐 120 | HMT | 에말겐 120 + AT | |
배합량 (부) | 0.005 | 0.2 | 0.005/0.2 | 0.005 | 0.2 | 0.005/0.2 | ||
과산화수소 | - | 0.1 | - | |||||
pH | 9 | |||||||
pH 조절제 | KOH | |||||||
구리 연마 속도 (Å/분) | 270 | 230 | 255 | 125 | 130 | 135 | 15 | |
LKD | 연마 속도 (Å/분) | <1 | 30 | 35 | 30 | 80 | 70 | 40 |
스크래치의 수 | 1 | 0 | 2 | 3 | 0 |
실시예 | |||
8 | 9 | ||
지립 | 종류 | 콜로이드성 실리카 | 복합입자 |
배합량 (부) | 5 | 5 | |
스크래치 방지제 | 종류 | 에말겐 120 + HMT | HMT |
배합량 (부) | 0.01/0.1 | 0.1 | |
과산화수소 | - | - | |
pH | 7 | 7 | |
pH 조절제 | KOH | KOH | |
구리 연마 속도 (Å/분) | 120 | 115 | |
LKD | 연마 속도 (Å/분) | 25 | 20 |
스크래치의 수 | 0 | 0 |
Claims (28)
- 나노인덴테이션법으로 측정한 탄성률이 20 GPa 이하인 층간 절연막을 하중이 0.03 MPa가 되도록 하여 1 분간 화학 기계 연마한 경우, 최대 길이가 1 ㎛ 이상인 스크래치가 피연마면의 면적 O.O1 ㎟ 당 평균 5개 이하이고,스크래치 방지제와 지립을 함유하고,상기 스크래치 방지제가 7-히드록시-5-메틸-1,3,4-트리아자인돌리진, 5-아미노-1H-테트라졸, 3-머캅토-1,2,4-트리아졸, 1-페닐-5-머캅토-1H-테트라졸, 5-메틸-1H-벤조트리아졸로 이루어진 군으로부터 선택된 1종 이상인 화학 기계 연마용 수계 분산체.
- 삭제
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- 제1항에 있어서, 상기 스크래치 방지제가 7-히드록시-5-메틸-1,3,4-트리아자인돌리진인 화학 기계 연마용 수계 분산체.
- 삭제
- 제1항에 있어서, 상기 지립이 유기/무기 복합 입자인 화학 기계 연마용 수계 분산체.
- 제9항에 있어서, 상기 유기/무기 복합 입자는 부호가 다른 제타 전위를 갖는 유기 입자와 무기 입자가 정전기력에 의해 결합되어 이루어진 것인 화학 기계 연마용 수계 분산체.
- 삭제
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- 제9항에 있어서, 상기 유기/무기 복합 입자가 폴리스티렌 또는 폴리메틸 메타크릴레이트의 중합체 입자의 존재 하에 알콕시실란, 알루미늄알콕시드 또는 티타늄알콕시드를 중축합시켜 형성된 것인 화학 기계 연마용 수계 분산체.
- 삭제
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- 제1항에 있어서, 산화제를 더 포함하는 화학 기계 연마용 수계 분산체.
- 제1항에 있어서, 상기 층간 절연막이 실세스퀴옥산, 불소 첨가 SiO2, 폴리이미드계 수지 또는 벤조시클로부텐으로 된 것인 화학 기계 연마용 수계 분산체.
- 삭제
- 제1항, 제7항, 제9항, 제10항, 제19항, 제24항 및 제25항 중 어느 한 항에 기재된 화학 기계 연마용 수계 분산체를 사용하여 연마를 행하는 화학 기계 연마 방법.
- 삭제
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000087015A JP2001269859A (ja) | 2000-03-27 | 2000-03-27 | 化学機械研磨用水系分散体 |
JP2000-87015 | 2000-03-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010089878A KR20010089878A (ko) | 2001-10-12 |
KR100777901B1 true KR100777901B1 (ko) | 2007-11-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020010015740A KR100777901B1 (ko) | 2000-03-27 | 2001-03-26 | 화학 기계 연마용 수계 분산체 |
Country Status (6)
Country | Link |
---|---|
US (2) | US20010049912A1 (ko) |
EP (1) | EP1138733B1 (ko) |
JP (1) | JP2001269859A (ko) |
KR (1) | KR100777901B1 (ko) |
DE (1) | DE60122413T2 (ko) |
TW (1) | TWI270569B (ko) |
Families Citing this family (67)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI254070B (en) * | 1999-08-18 | 2006-05-01 | Jsr Corp | Aqueous dispersion for chemical mechanical polishing |
JP4123685B2 (ja) * | 2000-05-18 | 2008-07-23 | Jsr株式会社 | 化学機械研磨用水系分散体 |
JP2002009152A (ja) * | 2000-06-21 | 2002-01-11 | Nec Corp | 半導体装置及びその製造方法 |
DE60225171T2 (de) * | 2001-10-26 | 2008-06-05 | AGC Seimi Chemical Co., Ltd., Chigasaki-shi | Poliermasse, verfahren zu deren herstellung und polierverfahren |
JPWO2003038883A1 (ja) * | 2001-10-31 | 2005-02-24 | 日立化成工業株式会社 | 研磨液及び研磨方法 |
US20030091647A1 (en) * | 2001-11-15 | 2003-05-15 | Lewis Jennifer A. | Controlled dispersion of colloidal suspensions via nanoparticle additions |
JP3692066B2 (ja) * | 2001-11-28 | 2005-09-07 | 株式会社東芝 | Cmpスラリおよび半導体装置の製造方法 |
JP4187497B2 (ja) | 2002-01-25 | 2008-11-26 | Jsr株式会社 | 半導体基板の化学機械研磨方法 |
US6974777B2 (en) * | 2002-06-07 | 2005-12-13 | Cabot Microelectronics Corporation | CMP compositions for low-k dielectric materials |
US6936543B2 (en) | 2002-06-07 | 2005-08-30 | Cabot Microelectronics Corporation | CMP method utilizing amphiphilic nonionic surfactants |
EP1517972A4 (en) * | 2002-06-07 | 2009-12-16 | Showa Denko Kk | METAL POLISHING COMPOSITION, POLISHING METHOD USING THE SAME, AND METHOD OF PRODUCING SEMICONDUCTOR WAFER USING THE POLISHING METHOD |
SG155045A1 (en) * | 2002-07-22 | 2009-09-30 | Seimi Chem Kk | Semiconductor polishing compound, process for its production and polishing method |
US20040162011A1 (en) * | 2002-08-02 | 2004-08-19 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing and production process of semiconductor device |
US20040226620A1 (en) | 2002-09-26 | 2004-11-18 | Daniel Therriault | Microcapillary networks |
JP2004128211A (ja) * | 2002-10-02 | 2004-04-22 | Toshiba Corp | 樹脂粒子を用いた半導体基板上の有機膜の研磨方法とスラリー |
US7300601B2 (en) | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
KR100663781B1 (ko) | 2003-01-31 | 2007-01-02 | 히다치 가세고교 가부시끼가이샤 | Cμρ연마제 및 연마방법 |
US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
WO2004090937A2 (en) * | 2003-04-10 | 2004-10-21 | Technion Research & Development Foundation Ltd | Copper cmp slurry composition |
US7736405B2 (en) | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
DE602004007718T2 (de) * | 2003-05-12 | 2008-04-30 | Jsr Corp. | Chemisch-mechanisches Poliermittel-Kit und chemisch-mechanisches Polierverfahren unter Verwendung desselben |
JP2004342751A (ja) * | 2003-05-14 | 2004-12-02 | Toshiba Corp | Cmp用スラリー、研磨方法、および半導体装置の製造方法 |
KR100539983B1 (ko) * | 2003-05-15 | 2006-01-10 | 학교법인 한양학원 | Cmp용 세리아 연마제 및 그 제조 방법 |
US7141617B2 (en) | 2003-06-17 | 2006-11-28 | The Board Of Trustees Of The University Of Illinois | Directed assembly of three-dimensional structures with micron-scale features |
US7037351B2 (en) | 2003-07-09 | 2006-05-02 | Dynea Chemicals Oy | Non-polymeric organic particles for chemical mechanical planarization |
US7037350B2 (en) * | 2003-07-14 | 2006-05-02 | Da Nanomaterials L.L.C. | Composition for chemical-mechanical polishing and method of using same |
US20050028450A1 (en) * | 2003-08-07 | 2005-02-10 | Wen-Qing Xu | CMP slurry |
CN1654617A (zh) * | 2004-02-10 | 2005-08-17 | 捷时雅株式会社 | 清洗用组合物和半导体基板的清洗方法及半导体装置的制造方法 |
TWI334882B (en) | 2004-03-12 | 2010-12-21 | K C Tech Co Ltd | Polishing slurry and method of producing same |
US7221326B2 (en) * | 2004-07-27 | 2007-05-22 | Git Japan, Inc. | Biconical antenna |
KR100566334B1 (ko) * | 2004-08-11 | 2006-03-31 | 테크노세미켐 주식회사 | 구리의 화학적 기계적 연마슬러리 조성물 |
US7524347B2 (en) * | 2004-10-28 | 2009-04-28 | Cabot Microelectronics Corporation | CMP composition comprising surfactant |
JP4852302B2 (ja) * | 2004-12-01 | 2012-01-11 | 信越半導体株式会社 | 研磨剤の製造方法及びそれにより製造された研磨剤並びにシリコンウエーハの製造方法 |
KR100641348B1 (ko) | 2005-06-03 | 2006-11-03 | 주식회사 케이씨텍 | Cmp용 슬러리와 이의 제조 방법 및 기판의 연마 방법 |
JP2007012679A (ja) * | 2005-06-28 | 2007-01-18 | Asahi Glass Co Ltd | 研磨剤および半導体集積回路装置の製造方法 |
US7316977B2 (en) * | 2005-08-24 | 2008-01-08 | Air Products And Chemicals, Inc. | Chemical-mechanical planarization composition having ketooxime compounds and associated method for use |
CN102863943B (zh) * | 2005-08-30 | 2015-03-25 | 花王株式会社 | 硬盘用基板用研磨液组合物、基板的研磨方法和制造方法 |
TW200717635A (en) * | 2005-09-06 | 2007-05-01 | Komatsu Denshi Kinzoku Kk | Polishing method for semiconductor wafer |
WO2007055278A1 (ja) * | 2005-11-11 | 2007-05-18 | Hitachi Chemical Co., Ltd. | 酸化ケイ素用研磨剤、添加液および研磨方法 |
US20070147551A1 (en) * | 2005-12-26 | 2007-06-28 | Katsumi Mabuchi | Abrasive-free polishing slurry and CMP process |
EP1813641B1 (en) * | 2006-01-30 | 2016-12-14 | Imec | A method for improving mechanical properties of polymer particles and its applications |
US8551202B2 (en) * | 2006-03-23 | 2013-10-08 | Cabot Microelectronics Corporation | Iodate-containing chemical-mechanical polishing compositions and methods |
US7501346B2 (en) * | 2006-07-21 | 2009-03-10 | Cabot Microelectronics Corporation | Gallium and chromium ions for oxide rate enhancement |
SG139699A1 (en) * | 2006-08-02 | 2008-02-29 | Fujimi Inc | Polishing composition and polishing process |
US20080067077A1 (en) * | 2006-09-04 | 2008-03-20 | Akira Kodera | Electrolytic liquid for electrolytic polishing and electrolytic polishing method |
TWI387643B (zh) * | 2006-12-29 | 2013-03-01 | Lg Chemical Ltd | 形成金屬線用之cmp漿料組成物 |
TW200916564A (en) * | 2007-01-31 | 2009-04-16 | Advanced Tech Materials | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
US7956102B2 (en) | 2007-04-09 | 2011-06-07 | The Board Of Trustees Of The University Of Illinois | Sol-gel inks |
DE102007056343A1 (de) * | 2007-11-22 | 2009-05-28 | Litec Lll Gmbh | Oberflächemodifizierte Leuchtstoffe |
EP2289667B1 (en) * | 2008-06-11 | 2019-06-26 | Shin-Etsu Chemical Co., Ltd. | Polishing agent for synthetic quartz glass substrate |
US7922939B2 (en) | 2008-10-03 | 2011-04-12 | The Board Of Trustees Of The University Of Illinois | Metal nanoparticle inks |
US8187500B2 (en) | 2008-10-17 | 2012-05-29 | The Board Of Trustees Of The University Of Illinois | Biphasic inks |
MY160307A (en) * | 2010-12-06 | 2017-02-28 | Moresco Corp | Compositon for polishing glass substrate, and polishing slurry |
US8808573B2 (en) * | 2011-04-15 | 2014-08-19 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
JP2013092748A (ja) | 2011-10-26 | 2013-05-16 | Cabot Corp | 複合体粒子を含むトナー添加剤 |
KR101257336B1 (ko) * | 2012-04-13 | 2013-04-23 | 유비머트리얼즈주식회사 | 연마용 슬러리 및 이를 이용한 기판 연마 방법 |
US8920667B2 (en) | 2013-01-30 | 2014-12-30 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition containing zirconia and metal oxidizer |
WO2014153355A1 (en) | 2013-03-20 | 2014-09-25 | Cabot Corporation | Composite particles and a process for making the same |
WO2014179419A1 (en) * | 2013-05-03 | 2014-11-06 | Cabot Corporation | Chemical mechanical planarization slurry composition comprising composite particles, process for removing material using said composition, cmp polishing pad and process for preparing said composition |
US9434859B2 (en) | 2013-09-24 | 2016-09-06 | Cabot Microelectronics Corporation | Chemical-mechanical planarization of polymer films |
US9982166B2 (en) | 2013-12-20 | 2018-05-29 | Cabot Corporation | Metal oxide-polymer composite particles for chemical mechanical planarization |
CN105874570B (zh) * | 2014-01-07 | 2020-07-28 | 三菱瓦斯化学株式会社 | 包含锌和锡的氧化物的蚀刻液以及蚀刻方法 |
WO2015122250A1 (ja) * | 2014-02-17 | 2015-08-20 | 三菱瓦斯化学株式会社 | インジウムと亜鉛とスズおよび酸素からなる酸化物のエッチング用液体組成物およびエッチング方法 |
JP2017005050A (ja) | 2015-06-08 | 2017-01-05 | 信越化学工業株式会社 | 研磨組成物及びその製造方法並びに研磨方法 |
US10672703B2 (en) | 2018-09-26 | 2020-06-02 | Nxp Usa, Inc. | Transistor with shield structure, packaged device, and method of fabrication |
US20200098684A1 (en) * | 2018-09-26 | 2020-03-26 | Nxp Usa, Inc. | Transistor, packaged device, and method of fabrication |
JP6724127B2 (ja) * | 2018-12-28 | 2020-07-15 | 信越化学工業株式会社 | 研磨組成物及びその製造方法並びに研磨方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0084674A1 (de) * | 1981-12-29 | 1983-08-03 | Hoechst Aktiengesellschaft | Verfahren zur Reinigung von Abfallschwefelsäure |
EP0846742A2 (en) * | 1996-12-09 | 1998-06-10 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
WO1999064527A1 (en) * | 1998-06-10 | 1999-12-16 | Rodel Holdings, Inc. | Composition and method for polishing in metal cmp |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04291722A (ja) | 1991-03-20 | 1992-10-15 | Asahi Denka Kogyo Kk | シリコンウェハー表面のヘイズ防止方法 |
JPH04291723A (ja) | 1991-03-20 | 1992-10-15 | Asahi Denka Kogyo Kk | シリコンウェハー用研摩剤 |
JPH04291724A (ja) | 1991-03-20 | 1992-10-15 | Asahi Denka Kogyo Kk | シリコンウェハーの研摩方法 |
US5391258A (en) | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
JP3397501B2 (ja) | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
US5690539A (en) | 1995-08-07 | 1997-11-25 | Cal-West Equipment Company Inc. | Method of abarding using surface abrasion compositions |
JPH0982668A (ja) | 1995-09-20 | 1997-03-28 | Sony Corp | 研磨用スラリー及びこの研磨用スラリーを用いる研磨方法 |
JP3627342B2 (ja) | 1996-01-31 | 2005-03-09 | Jsr株式会社 | 磁性ポリマー粒子およびその製造方法 |
US6420269B2 (en) * | 1996-02-07 | 2002-07-16 | Hitachi Chemical Company, Ltd. | Cerium oxide abrasive for polishing insulating films formed on substrate and methods for using the same |
US5858813A (en) | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
JP3507628B2 (ja) | 1996-08-06 | 2004-03-15 | 昭和電工株式会社 | 化学的機械研磨用研磨組成物 |
JP3015763B2 (ja) | 1996-08-30 | 2000-03-06 | 三洋電機株式会社 | 半導体装置の製造方法 |
US5738800A (en) | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
KR19980032145A (ko) | 1996-10-04 | 1998-07-25 | 포만제프리엘 | 알루미늄 구리 합금의 화학기계적 연마시 구리 도금을 방지하는 방법 |
US5954997A (en) | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US5876490A (en) * | 1996-12-09 | 1999-03-02 | International Business Machines Corporatin | Polish process and slurry for planarization |
US6126853A (en) | 1996-12-09 | 2000-10-03 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
US5756398A (en) | 1997-03-17 | 1998-05-26 | Rodel, Inc. | Composition and method for polishing a composite comprising titanium |
KR100510815B1 (ko) | 1997-05-07 | 2005-10-24 | 제이에스알 가부시끼가이샤 | 무기입자의 수성분산체 및 그의 제조방법 |
JPH1140526A (ja) | 1997-07-22 | 1999-02-12 | Hitachi Ltd | 配線形成方法及び半導体装置の製造方法 |
KR19990023544A (ko) | 1997-08-19 | 1999-03-25 | 마쯔모또 에이찌 | 무기 입자의 수성 분산체와 그의 제조 방법 |
JP3371775B2 (ja) | 1997-10-31 | 2003-01-27 | 株式会社日立製作所 | 研磨方法 |
US5990012A (en) * | 1998-01-27 | 1999-11-23 | Micron Technology, Inc. | Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads |
JPH10279928A (ja) | 1998-02-27 | 1998-10-20 | Rodel Inc | 研磨速度抑制化合物 |
US6217416B1 (en) * | 1998-06-26 | 2001-04-17 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrates |
US6063306A (en) | 1998-06-26 | 2000-05-16 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrate |
JP2002528903A (ja) * | 1998-10-23 | 2002-09-03 | アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド | 活性剤溶液を含有し、化学機械的に磨くためのスラリーシステム |
US6136714A (en) | 1998-12-17 | 2000-10-24 | Siemens Aktiengesellschaft | Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor |
KR100447551B1 (ko) | 1999-01-18 | 2004-09-08 | 가부시끼가이샤 도시바 | 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법 |
TWI254070B (en) * | 1999-08-18 | 2006-05-01 | Jsr Corp | Aqueous dispersion for chemical mechanical polishing |
JP4505891B2 (ja) | 1999-09-06 | 2010-07-21 | Jsr株式会社 | 半導体装置の製造に用いる化学機械研磨用水系分散体 |
JP4075247B2 (ja) | 1999-09-30 | 2008-04-16 | Jsr株式会社 | 化学機械研磨用水系分散体 |
KR100444239B1 (ko) * | 1999-11-22 | 2004-08-11 | 제이에스알 가부시끼가이샤 | 복합화 입자의 제조 방법, 이 방법에 의해 제조되는복합화 입자 및 이 복합화 입자를 함유하는 화학 기계연마용 수계 분산체, 및 화학 기계 연마용 수계 분산체의제조 방법 |
US6416685B1 (en) * | 2000-04-11 | 2002-07-09 | Honeywell International Inc. | Chemical mechanical planarization of low dielectric constant materials |
-
2000
- 2000-03-27 JP JP2000087015A patent/JP2001269859A/ja active Pending
-
2001
- 2001-03-26 DE DE60122413T patent/DE60122413T2/de not_active Expired - Lifetime
- 2001-03-26 EP EP01107381A patent/EP1138733B1/en not_active Expired - Lifetime
- 2001-03-26 KR KR1020010015740A patent/KR100777901B1/ko active IP Right Grant
- 2001-03-26 US US09/816,397 patent/US20010049912A1/en not_active Abandoned
- 2001-03-27 TW TW090107425A patent/TWI270569B/zh not_active IP Right Cessation
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2003
- 2003-10-22 US US10/689,680 patent/US7087530B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0084674A1 (de) * | 1981-12-29 | 1983-08-03 | Hoechst Aktiengesellschaft | Verfahren zur Reinigung von Abfallschwefelsäure |
EP0846742A2 (en) * | 1996-12-09 | 1998-06-10 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
WO1999064527A1 (en) * | 1998-06-10 | 1999-12-16 | Rodel Holdings, Inc. | Composition and method for polishing in metal cmp |
Also Published As
Publication number | Publication date |
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KR20010089878A (ko) | 2001-10-12 |
TWI270569B (en) | 2007-01-11 |
DE60122413D1 (de) | 2006-10-05 |
DE60122413T2 (de) | 2007-03-08 |
EP1138733A2 (en) | 2001-10-04 |
US7087530B2 (en) | 2006-08-08 |
US20040144755A1 (en) | 2004-07-29 |
EP1138733A3 (en) | 2001-10-24 |
EP1138733B1 (en) | 2006-08-23 |
US20010049912A1 (en) | 2001-12-13 |
JP2001269859A (ja) | 2001-10-02 |
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