DE60122413D1 - Wässrige Dispersion zum chemisch-mechanischen Polieren von Isolierfilmen - Google Patents

Wässrige Dispersion zum chemisch-mechanischen Polieren von Isolierfilmen

Info

Publication number
DE60122413D1
DE60122413D1 DE60122413T DE60122413T DE60122413D1 DE 60122413 D1 DE60122413 D1 DE 60122413D1 DE 60122413 T DE60122413 T DE 60122413T DE 60122413 T DE60122413 T DE 60122413T DE 60122413 D1 DE60122413 D1 DE 60122413D1
Authority
DE
Germany
Prior art keywords
aqueous dispersion
mechanical polishing
chemical mechanical
insulating films
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60122413T
Other languages
English (en)
Other versions
DE60122413T2 (de
Inventor
Masayuki Motonari
Masayuki Hattori
Nobuo Kawahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Publication of DE60122413D1 publication Critical patent/DE60122413D1/de
Application granted granted Critical
Publication of DE60122413T2 publication Critical patent/DE60122413T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
DE60122413T 2000-03-27 2001-03-26 Wässrige Dispersion zum chemisch-mechanischen Polieren von Isolierfilmen Expired - Lifetime DE60122413T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000087015A JP2001269859A (ja) 2000-03-27 2000-03-27 化学機械研磨用水系分散体
JP2000087015 2000-03-27

Publications (2)

Publication Number Publication Date
DE60122413D1 true DE60122413D1 (de) 2006-10-05
DE60122413T2 DE60122413T2 (de) 2007-03-08

Family

ID=18603101

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60122413T Expired - Lifetime DE60122413T2 (de) 2000-03-27 2001-03-26 Wässrige Dispersion zum chemisch-mechanischen Polieren von Isolierfilmen

Country Status (6)

Country Link
US (2) US20010049912A1 (de)
EP (1) EP1138733B1 (de)
JP (1) JP2001269859A (de)
KR (1) KR100777901B1 (de)
DE (1) DE60122413T2 (de)
TW (1) TWI270569B (de)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI254070B (en) * 1999-08-18 2006-05-01 Jsr Corp Aqueous dispersion for chemical mechanical polishing
JP4123685B2 (ja) * 2000-05-18 2008-07-23 Ｊｓｒ株式会社 化学機械研磨用水系分散体
JP2002009152A (ja) * 2000-06-21 2002-01-11 Nec Corp 半導体装置及びその製造方法
CN1306562C (zh) * 2001-10-26 2007-03-21 旭硝子株式会社 研磨剂、研磨剂的制造方法以及研磨方法
US20050050803A1 (en) * 2001-10-31 2005-03-10 Jin Amanokura Polishing fluid and polishing method
US20030091647A1 (en) * 2001-11-15 2003-05-15 Lewis Jennifer A. Controlled dispersion of colloidal suspensions via nanoparticle additions
JP3692066B2 (ja) * 2001-11-28 2005-09-07 株式会社東芝 Ｃｍｐスラリおよび半導体装置の製造方法
JP4187497B2 (ja) * 2002-01-25 2008-11-26 Ｊｓｒ株式会社 半導体基板の化学機械研磨方法
US6974777B2 (en) * 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
US20050282387A1 (en) * 2002-06-07 2005-12-22 Takashi Sato Metal polish composition, polishing method using the composition and method for producing wafer using the polishing method
WO2004010487A1 (ja) * 2002-07-22 2004-01-29 Seimi Chemical Co., Ltd. 半導体用研磨剤、その製造方法及び研磨方法
US20040162011A1 (en) * 2002-08-02 2004-08-19 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and production process of semiconductor device
US20040226620A1 (en) 2002-09-26 2004-11-18 Daniel Therriault Microcapillary networks
JP2004128211A (ja) * 2002-10-02 2004-04-22 Toshiba Corp 樹脂粒子を用いた半導体基板上の有機膜の研磨方法とスラリー
US7300601B2 (en) 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US7838482B2 (en) * 2003-01-31 2010-11-23 Hitachi Chemical Co. Ltd. CMP polishing compound and polishing method
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
WO2004090937A2 (en) * 2003-04-10 2004-10-21 Technion Research & Development Foundation Ltd Copper cmp slurry composition
EP1477538B1 (de) * 2003-05-12 2007-07-25 JSR Corporation Chemisch-mechanisches Poliermittel-Kit und chemisch-mechanisches Polierverfahren unter Verwendung desselben
US7736405B2 (en) 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
JP2004342751A (ja) * 2003-05-14 2004-12-02 Toshiba Corp Ｃｍｐ用スラリー、研磨方法、および半導体装置の製造方法
KR100539983B1 (ko) * 2003-05-15 2006-01-10 학교법인 한양학원 Ｃｍｐ용 세리아 연마제 및 그 제조 방법
US7141617B2 (en) * 2003-06-17 2006-11-28 The Board Of Trustees Of The University Of Illinois Directed assembly of three-dimensional structures with micron-scale features
JP2007535118A (ja) 2003-07-09 2007-11-29 ダイネア ケミカルズ オイ 化学的機械的な平坦化に用いるための非高分子有機粒子
US7037350B2 (en) * 2003-07-14 2006-05-02 Da Nanomaterials L.L.C. Composition for chemical-mechanical polishing and method of using same
US20050028450A1 (en) * 2003-08-07 2005-02-10 Wen-Qing Xu CMP slurry
CN1654617A (zh) * 2004-02-10 2005-08-17 捷时雅株式会社 清洗用组合物和半导体基板的清洗方法及半导体装置的制造方法
CN1667026B (zh) 2004-03-12 2011-11-30 K.C.科技股份有限公司 抛光浆料及其制备方法和基板的抛光方法
US7221326B2 (en) * 2004-07-27 2007-05-22 Git Japan, Inc. Biconical antenna
KR100566334B1 (ko) * 2004-08-11 2006-03-31 테크노세미켐 주식회사 구리의 화학적 기계적 연마슬러리 조성물
US7524347B2 (en) * 2004-10-28 2009-04-28 Cabot Microelectronics Corporation CMP composition comprising surfactant
JP4852302B2 (ja) * 2004-12-01 2012-01-11 信越半導体株式会社 研磨剤の製造方法及びそれにより製造された研磨剤並びにシリコンウエーハの製造方法
KR100641348B1 (ko) 2005-06-03 2006-11-03 주식회사 케이씨텍 Ｃｍｐ용 슬러리와 이의 제조 방법 및 기판의 연마 방법
JP2007012679A (ja) * 2005-06-28 2007-01-18 Asahi Glass Co Ltd 研磨剤および半導体集積回路装置の製造方法
US7316977B2 (en) * 2005-08-24 2008-01-08 Air Products And Chemicals, Inc. Chemical-mechanical planarization composition having ketooxime compounds and associated method for use
CN102863943B (zh) * 2005-08-30 2015-03-25 花王株式会社 硬盘用基板用研磨液组合物、基板的研磨方法和制造方法
TW200717635A (en) * 2005-09-06 2007-05-01 Komatsu Denshi Kinzoku Kk Polishing method for semiconductor wafer
KR101243423B1 (ko) * 2005-11-11 2013-03-13 히타치가세이가부시끼가이샤 산화규소용 연마제, 첨가액 및 연마 방법
US20070147551A1 (en) * 2005-12-26 2007-06-28 Katsumi Mabuchi Abrasive-free polishing slurry and CMP process
EP1813641B1 (de) * 2006-01-30 2016-12-14 Imec Verfahren zur verbesserung der mechanischen eigenschaften von polymerteilchen und dessen verwendung
US8551202B2 (en) * 2006-03-23 2013-10-08 Cabot Microelectronics Corporation Iodate-containing chemical-mechanical polishing compositions and methods
US7501346B2 (en) * 2006-07-21 2009-03-10 Cabot Microelectronics Corporation Gallium and chromium ions for oxide rate enhancement
SG139699A1 (en) * 2006-08-02 2008-02-29 Fujimi Inc Polishing composition and polishing process
US20080067077A1 (en) * 2006-09-04 2008-03-20 Akira Kodera Electrolytic liquid for electrolytic polishing and electrolytic polishing method
WO2008082177A1 (en) * 2006-12-29 2008-07-10 Lg Chem, Ltd. Cmp slurry composition for forming metal wiring line
WO2008095078A1 (en) * 2007-01-31 2008-08-07 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
US7956102B2 (en) 2007-04-09 2011-06-07 The Board Of Trustees Of The University Of Illinois Sol-gel inks
DE102007056343A1 (de) * 2007-11-22 2009-05-28 Litec Lll Gmbh Oberflächemodifizierte Leuchtstoffe
WO2009150938A1 (ja) * 2008-06-11 2009-12-17 信越化学工業株式会社 合成石英ガラス基板用研磨剤
US7922939B2 (en) 2008-10-03 2011-04-12 The Board Of Trustees Of The University Of Illinois Metal nanoparticle inks
US8187500B2 (en) 2008-10-17 2012-05-29 The Board Of Trustees Of The University Of Illinois Biphasic inks
CN103249525B (zh) * 2010-12-06 2016-01-06 株式会社Moresco 玻璃基板抛光用组合物和抛光浆料
US8808573B2 (en) * 2011-04-15 2014-08-19 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
JP2013092748A (ja) 2011-10-26 2013-05-16 Cabot Corp 複合体粒子を含むトナー添加剤
KR101257336B1 (ko) * 2012-04-13 2013-04-23 유비머트리얼즈주식회사 연마용 슬러리 및 이를 이용한 기판 연마 방법
US8920667B2 (en) 2013-01-30 2014-12-30 Cabot Microelectronics Corporation Chemical-mechanical polishing composition containing zirconia and metal oxidizer
US9926398B2 (en) 2013-03-20 2018-03-27 Cabot Corporation Composite particles and a process for making the same
US9725621B2 (en) 2013-05-03 2017-08-08 Cabot Corporation Chemical mechanical planarization slurry composition comprising composite particles, process for removing material using said composition, CMP polishing pad and process for preparing said composition
US9434859B2 (en) 2013-09-24 2016-09-06 Cabot Microelectronics Corporation Chemical-mechanical planarization of polymer films
KR101916555B1 (ko) 2013-12-20 2018-11-07 캐보트 코포레이션 화학적 기계적 평탄화를 위한 금속 산화물-중합체 복합 입자
JP6384490B2 (ja) * 2014-01-07 2018-09-05 三菱瓦斯化学株式会社 亜鉛とスズを含む酸化物のエッチング液およびエッチング方法
US10023797B2 (en) * 2014-02-17 2018-07-17 Mitsubishi Gas Chemical Company, Inc. Liquid composition for etching oxides comprising indium, zinc, tin, and oxygen and etching method
JP2017005050A (ja) 2015-06-08 2017-01-05 信越化学工業株式会社 研磨組成物及びその製造方法並びに研磨方法
US10672703B2 (en) 2018-09-26 2020-06-02 Nxp Usa, Inc. Transistor with shield structure, packaged device, and method of fabrication
US20200098684A1 (en) * 2018-09-26 2020-03-26 Nxp Usa, Inc. Transistor, packaged device, and method of fabrication
JP6724127B2 (ja) * 2018-12-28 2020-07-15 信越化学工業株式会社 研磨組成物及びその製造方法並びに研磨方法

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3151691A1 (de) * 1981-12-29 1983-07-07 Hoechst Ag, 6230 Frankfurt Verfahren zur reinigung von abfallschwefelsaeure
JPH04291722A (ja) 1991-03-20 1992-10-15 Asahi Denka Kogyo Kk シリコンウェハー表面のヘイズ防止方法
JPH04291723A (ja) 1991-03-20 1992-10-15 Asahi Denka Kogyo Kk シリコンウェハー用研摩剤
JPH04291724A (ja) 1991-03-20 1992-10-15 Asahi Denka Kogyo Kk シリコンウェハーの研摩方法
US5391258A (en) 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
JP3397501B2 (ja) 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US5690539A (en) 1995-08-07 1997-11-25 Cal-West Equipment Company Inc. Method of abarding using surface abrasion compositions
JPH0982668A (ja) 1995-09-20 1997-03-28 Sony Corp 研磨用スラリー及びこの研磨用スラリーを用いる研磨方法
JP3627342B2 (ja) 1996-01-31 2005-03-09 Ｊｓｒ株式会社 磁性ポリマー粒子およびその製造方法
US6420269B2 (en) * 1996-02-07 2002-07-16 Hitachi Chemical Company, Ltd. Cerium oxide abrasive for polishing insulating films formed on substrate and methods for using the same
US5858813A (en) 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
JP3507628B2 (ja) 1996-08-06 2004-03-15 昭和電工株式会社 化学的機械研磨用研磨組成物
JP3015763B2 (ja) 1996-08-30 2000-03-06 三洋電機株式会社 半導体装置の製造方法
US5738800A (en) 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
KR19980032145A (ko) 1996-10-04 1998-07-25 포만제프리엘 알루미늄 구리 합금의 화학기계적 연마시 구리 도금을 방지하는 방법
US5876490A (en) * 1996-12-09 1999-03-02 International Business Machines Corporatin Polish process and slurry for planarization
US6126853A (en) 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5954997A (en) 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US6309560B1 (en) * 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US5756398A (en) 1997-03-17 1998-05-26 Rodel, Inc. Composition and method for polishing a composite comprising titanium
KR100510815B1 (ko) 1997-05-07 2005-10-24 제이에스알 가부시끼가이샤 무기입자의 수성분산체 및 그의 제조방법
JPH1140526A (ja) 1997-07-22 1999-02-12 Hitachi Ltd 配線形成方法及び半導体装置の製造方法
KR19990023544A (ko) 1997-08-19 1999-03-25 마쯔모또 에이찌 무기 입자의 수성 분산체와 그의 제조 방법
JP3371775B2 (ja) 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US5990012A (en) * 1998-01-27 1999-11-23 Micron Technology, Inc. Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads
JPH10279928A (ja) 1998-02-27 1998-10-20 Rodel Inc 研磨速度抑制化合物
JP2002517593A (ja) * 1998-06-10 2002-06-18 ロデール ホールディングス インコーポレイテッド 金属ｃｍｐにおける研磨用組成物および研磨方法
US6217416B1 (en) * 1998-06-26 2001-04-17 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates
US6063306A (en) 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
JP2002528903A (ja) * 1998-10-23 2002-09-03 アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド 活性剤溶液を含有し、化学機械的に磨くためのスラリーシステム
US6136714A (en) 1998-12-17 2000-10-24 Siemens Aktiengesellschaft Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor
KR100447551B1 (ko) 1999-01-18 2004-09-08 가부시끼가이샤 도시바 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법
TWI254070B (en) * 1999-08-18 2006-05-01 Jsr Corp Aqueous dispersion for chemical mechanical polishing
JP4505891B2 (ja) 1999-09-06 2010-07-21 Ｊｓｒ株式会社 半導体装置の製造に用いる化学機械研磨用水系分散体
JP4075247B2 (ja) 1999-09-30 2008-04-16 Ｊｓｒ株式会社 化学機械研磨用水系分散体
DE60015479T2 (de) * 1999-11-22 2005-10-27 Jsr Corp. Verfahren zur Herstellung eines Verbundpartikels für chemisch-mechanisches Polieren
US6416685B1 (en) * 2000-04-11 2002-07-09 Honeywell International Inc. Chemical mechanical planarization of low dielectric constant materials

Also Published As

Publication number Publication date
KR100777901B1 (ko) 2007-11-27
US20010049912A1 (en) 2001-12-13
EP1138733A3 (de) 2001-10-24
KR20010089878A (ko) 2001-10-12
EP1138733A2 (de) 2001-10-04
EP1138733B1 (de) 2006-08-23
JP2001269859A (ja) 2001-10-02
US7087530B2 (en) 2006-08-08
US20040144755A1 (en) 2004-07-29
TWI270569B (en) 2007-01-11
DE60122413T2 (de) 2007-03-08

Similar Documents

Publication Publication Date Title
DE60122413D1 (de) Wässrige Dispersion zum chemisch-mechanischen Polieren von Isolierfilmen
DE60127206D1 (de) Wässrige Dispersion zum chemisch-mechanischen Polieren von Kupfersubstraten
DE60136759D1 (de) Polierverfahren
NO20024774D0 (no) Kjemiske forbindelser
NO20032829L (no) Kjemiske forbindelser
IS2532B (is) Aðferð til að afsalta sjó
AR028414A1 (es) Compuestos quimicos
NO20031561D0 (no) Kjemiske forbindelser
DE50106762D1 (de) Ionische Flüssigkeiten
NO20023663D0 (no) Broplugg
NO20026120L (no) Våt maleprosess
DE60124252D1 (de) Zweistufiges chemisch-mechanisches polierverfahren
DE60125859D1 (de) Poliervorrichtung
DE60236426D1 (de) Kontaktsonde
DK1263724T3 (da) Hidtil ukendte forbindelser
NO20030628L (no) Kjemiske forbindelser
DE60138384D1 (de) Zweifarbiges beschichtungsverfahren
DK1299356T3 (da) Hidtil ukendte forbindelser
DE60137851D1 (de) Steckerkontakt
DE60120028D1 (de) Kontaktanordnung
EE200100588A (et) Linalooloksiidi või linalooloksiidi sisaldavate segude valmistamise meetod
ATE317424T1 (de) Flüssige scheuermittel
FI20010472A0 (fi) Menetelmä alfa-pineenin hydraamiseksi
NO20030317D0 (no) Kjemisk fremgangsmåte
NO20033958D0 (no) Oppdriftsinnretning

Legal Events

Date Code Title Description
8364 No opposition during term of opposition