DE60127206D1 - Wässrige Dispersion zum chemisch-mechanischen Polieren von Kupfersubstraten - Google Patents

Wässrige Dispersion zum chemisch-mechanischen Polieren von Kupfersubstraten

Info

Publication number
DE60127206D1
DE60127206D1 DE60127206T DE60127206T DE60127206D1 DE 60127206 D1 DE60127206 D1 DE 60127206D1 DE 60127206 T DE60127206 T DE 60127206T DE 60127206 T DE60127206 T DE 60127206T DE 60127206 D1 DE60127206 D1 DE 60127206D1
Authority
DE
Germany
Prior art keywords
aqueous dispersion
mechanical polishing
chemical mechanical
copper substrates
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60127206T
Other languages
English (en)
Other versions
DE60127206T2 (de
Inventor
Hiroyuki Yano
Gaku Minamihaba
Masayuki Motonari
Masayuki Hattori
Nobuo Kawahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
JSR Corp
Original Assignee
Toshiba Corp
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, JSR Corp filed Critical Toshiba Corp
Publication of DE60127206D1 publication Critical patent/DE60127206D1/de
Application granted granted Critical
Publication of DE60127206T2 publication Critical patent/DE60127206T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)
DE60127206T 2000-06-30 2001-06-28 Wässrige Dispersion zum chemisch-mechanischen Polieren von Kupfersubstraten Expired - Lifetime DE60127206T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000199462A JP3837277B2 (ja) 2000-06-30 2000-06-30 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法
JP2000199462 2000-06-30

Publications (2)

Publication Number Publication Date
DE60127206D1 true DE60127206D1 (de) 2007-04-26
DE60127206T2 DE60127206T2 (de) 2007-12-20

Family

ID=18697476

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60127206T Expired - Lifetime DE60127206T2 (de) 2000-06-30 2001-06-28 Wässrige Dispersion zum chemisch-mechanischen Polieren von Kupfersubstraten

Country Status (6)

Country Link
US (1) US6653267B2 (de)
EP (1) EP1167482B1 (de)
JP (1) JP3837277B2 (de)
KR (1) KR100747954B1 (de)
DE (1) DE60127206T2 (de)
TW (1) TW538113B (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000183003A (ja) * 1998-10-07 2000-06-30 Toshiba Corp 銅系金属用研磨組成物および半導体装置の製造方法
JP2002164307A (ja) * 2000-11-24 2002-06-07 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP4187497B2 (ja) 2002-01-25 2008-11-26 Ｊｓｒ株式会社 半導体基板の化学機械研磨方法
JP4688397B2 (ja) * 2002-03-27 2011-05-25 泰弘 谷 キャリア粒子の取扱い方法および研磨剤
TWI282360B (en) 2002-06-03 2007-06-11 Hitachi Chemical Co Ltd Polishing composition and polishing method thereof
KR100480797B1 (ko) * 2002-07-26 2005-04-07 엘지.필립스 엘시디 주식회사 구리 몰리브덴막의 식각속도를 개선한 식각용액 및 그식각방법
US20040162011A1 (en) * 2002-08-02 2004-08-19 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and production process of semiconductor device
US20040175942A1 (en) * 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
JP2004247605A (ja) 2003-02-14 2004-09-02 Toshiba Corp Ｃｍｐ用スラリーおよび半導体装置の製造方法
DE10313517B4 (de) * 2003-03-25 2006-03-30 Atotech Deutschland Gmbh Lösung zum Ätzen von Kupfer, Verfahren zum Vorbehandeln einer Schicht aus Kupfer sowie Anwendung des Verfahrens
JP4649871B2 (ja) * 2003-05-12 2011-03-16 Ｊｓｒ株式会社 化学機械研磨剤キットを用いた化学機械研磨方法
TWI292931B (en) * 2003-05-12 2008-01-21 Jsr Corp Chemical mechanical polishing agent kit and chemical mechanical polishing method using the same
US7186653B2 (en) 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
JP2007500943A (ja) * 2003-07-30 2007-01-18 クライマックス・エンジニアード・マテリアルズ・エルエルシー 銅を化学的機械的に平滑化するためのスラリーおよび方法
US20050022456A1 (en) * 2003-07-30 2005-02-03 Babu S. V. Polishing slurry and method for chemical-mechanical polishing of copper
JP4759219B2 (ja) * 2003-11-25 2011-08-31 株式会社フジミインコーポレーテッド 研磨用組成物
EP1670047B1 (de) * 2003-09-30 2010-04-07 Fujimi Incorporated Polierzusammensetzung und polierverfahren
TWI347969B (en) 2003-09-30 2011-09-01 Fujimi Inc Polishing composition
JP2005116987A (ja) * 2003-10-10 2005-04-28 Fujimi Inc 研磨用組成物
JP3892846B2 (ja) * 2003-11-27 2007-03-14 株式会社東芝 Ｃｍｐ用スラリー、研磨方法、および半導体装置の製造方法
US7287314B2 (en) * 2004-02-27 2007-10-30 Hitachi Global Storage Technologies Netherlands B.V. One step copper damascene CMP process and slurry
JP2005268665A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP2006114729A (ja) * 2004-10-15 2006-04-27 Jsr Corp 余剰の金属層の除去方法
US20060096179A1 (en) * 2004-11-05 2006-05-11 Cabot Microelectronics Corporation CMP composition containing surface-modified abrasive particles
KR100601740B1 (ko) * 2005-04-11 2006-07-18 테크노세미켐 주식회사 투명도전막 식각용액
CN101233601A (zh) * 2005-06-13 2008-07-30 高级技术材料公司 在金属硅化物形成后用于选择性除去金属或金属合金的组合物及方法
US20060283095A1 (en) * 2005-06-15 2006-12-21 Planar Solutions, Llc Fumed silica to colloidal silica conversion process
KR20080059266A (ko) * 2005-09-26 2008-06-26 플레이너 솔루션즈 엘엘씨 화학적 기계적 연마 용도로 사용되기 위한 초고순도의콜로이드 실리카
US20070144075A1 (en) * 2005-12-09 2007-06-28 Industrial Technology Research Institute Chemical mechanical polishing particles and slurry and method of producing the same
US20080153731A1 (en) * 2006-12-21 2008-06-26 Mark Buehler Clean chemistry composition, method of manufacturing same, and system making use of same
CN101974297A (zh) * 2010-11-12 2011-02-16 大连三达奥克化学股份有限公司 核/壳型复合纳米磨料铜化学机械抛光液
CN102766406B (zh) * 2012-06-25 2014-12-10 深圳市力合材料有限公司 一种去除半导体硅片表面缺陷的抛光组合物及其制备方法
US11993729B2 (en) * 2017-11-22 2024-05-28 Basf Se Chemical mechanical polishing composition
KR20200061186A (ko) * 2018-11-23 2020-06-02 솔브레인 주식회사 연마용 조성물 및 이를 이용하는 연마 방법

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850827A (ja) * 1981-09-08 1983-03-25 Fujitsu Ltd フェーズ・ロック・ループ回路
JPH04291724A (ja) 1991-03-20 1992-10-15 Asahi Denka Kogyo Kk シリコンウェハーの研摩方法
JPH04291723A (ja) 1991-03-20 1992-10-15 Asahi Denka Kogyo Kk シリコンウェハー用研摩剤
JPH04291722A (ja) 1991-03-20 1992-10-15 Asahi Denka Kogyo Kk シリコンウェハー表面のヘイズ防止方法
US5607718A (en) 1993-03-26 1997-03-04 Kabushiki Kaisha Toshiba Polishing method and polishing apparatus
US5575837A (en) 1993-04-28 1996-11-19 Fujimi Incorporated Polishing composition
US5405412A (en) * 1994-04-13 1995-04-11 The Procter & Gamble Company Bleaching compounds comprising N-acyl caprolactam and alkanoyloxybenzene sulfonate bleach activators
JP3397501B2 (ja) 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US6046110A (en) * 1995-06-08 2000-04-04 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing a semiconductor device
JP3192968B2 (ja) 1995-06-08 2001-07-30 株式会社東芝 銅系金属用研磨液および半導体装置の製造方法
US5690539A (en) 1995-08-07 1997-11-25 Cal-West Equipment Company Inc. Method of abarding using surface abrasion compositions
JPH0982668A (ja) 1995-09-20 1997-03-28 Sony Corp 研磨用スラリー及びこの研磨用スラリーを用いる研磨方法
JP3015763B2 (ja) 1996-08-30 2000-03-06 三洋電機株式会社 半導体装置の製造方法
US5738800A (en) 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
KR19980032145A (ko) 1996-10-04 1998-07-25 포만제프리엘 알루미늄 구리 합금의 화학기계적 연마시 구리 도금을 방지하는 방법
US5954997A (en) * 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US6309560B1 (en) 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5756398A (en) 1997-03-17 1998-05-26 Rodel, Inc. Composition and method for polishing a composite comprising titanium
JPH1140526A (ja) 1997-07-22 1999-02-12 Hitachi Ltd 配線形成方法及び半導体装置の製造方法
JP3371775B2 (ja) 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
TW455626B (en) * 1998-07-23 2001-09-21 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
US6036758A (en) * 1998-08-10 2000-03-14 Pmd (U.K.) Limited Surface treatment of copper
US6083840A (en) * 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
KR100447551B1 (ko) * 1999-01-18 2004-09-08 가부시끼가이샤 도시바 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법
KR100472882B1 (ko) * 1999-01-18 2005-03-07 가부시끼가이샤 도시바 수계 분산체, 이를 이용한 화학 기계 연마용 수계 분산체조성물, 웨이퍼 표면의 연마 방법 및 반도체 장치의 제조방법
JP3523107B2 (ja) * 1999-03-17 2004-04-26 株式会社東芝 Ｃｍｐ用スラリおよびｃｍｐ法
US6348076B1 (en) * 1999-10-08 2002-02-19 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
TW572980B (en) * 2000-01-12 2004-01-21 Jsr Corp Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process

Also Published As

Publication number Publication date
JP2002012854A (ja) 2002-01-15
US6653267B2 (en) 2003-11-25
JP3837277B2 (ja) 2006-10-25
EP1167482A3 (de) 2003-09-03
EP1167482A2 (de) 2002-01-02
US20020016275A1 (en) 2002-02-07
KR100747954B1 (ko) 2007-08-08
KR20020002285A (ko) 2002-01-09
TW538113B (en) 2003-06-21
DE60127206T2 (de) 2007-12-20
EP1167482B1 (de) 2007-03-14

Similar Documents

Publication Publication Date Title
DE60127206D1 (de) Wässrige Dispersion zum chemisch-mechanischen Polieren von Kupfersubstraten
DE60122413D1 (de) Wässrige Dispersion zum chemisch-mechanischen Polieren von Isolierfilmen
DE60015411D1 (de) Wässerige Dispersionsaufschlämmung für chemisch-mechanisches Polierverfahren
DE60142862D1 (de) Substrathaltevorrichtung
DE60133231D1 (de) Polierverfahren
EP1590421A4 (de) Kupfer-cmp-lösungen mit sulfiertenamphiprotika
GB0112021D0 (en) Substrate
DE50209888D1 (de) Druckverfahren
DE60231166D1 (de) Flüssigwaschmittel
DE10234710B8 (de) System zum Trocknen von Halbleitersubstraten
GB0113297D0 (en) Chemical Process
DE60217474D1 (de) Rakelhalter
NO20034182D0 (no) Kjemiske forbindelser
NO20022644D0 (no) Renseprosess
GB0114408D0 (en) Chemical process
DE50202698D1 (de) Beschichtungsverfahren
GB0130517D0 (en) Chemical process
NO20022430L (no) Fremgangsmåte for gjenvinning av vannlöselige surfaktanter
DE50204513D1 (de) Beschichtungsverfahren
NO20030317L (no) Kjemisk fremgangsmåte
DE50212755D1 (de) Bohrfutter
GB0110411D0 (en) Chemical process
DE60135923D1 (de) Nitril-verfahren
DE60133228D1 (de) Oberflächenwellenbauelement
HU0103088D0 (en) Chemical process

Legal Events

Date Code Title Description
8364 No opposition during term of opposition