DE10234710B8 - System zum Trocknen von Halbleitersubstraten - Google Patents

System zum Trocknen von Halbleitersubstraten Download PDF

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Publication number
DE10234710B8
DE10234710B8 DE10234710A DE10234710A DE10234710B8 DE 10234710 B8 DE10234710 B8 DE 10234710B8 DE 10234710 A DE10234710 A DE 10234710A DE 10234710 A DE10234710 A DE 10234710A DE 10234710 B8 DE10234710 B8 DE 10234710B8
Authority
DE
Germany
Prior art keywords
semiconductor substrates
drying semiconductor
drying
substrates
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10234710A
Other languages
English (en)
Other versions
DE10234710B4 (de
DE10234710A1 (de
Inventor
Hun-Jung Suwon Yi
Kyung-Dae Suwon Kim
Sang-Mun Sungnam Chon
Ki-Seok Seo Lee
Bo-Yong Osan Lee
Sang-Oh Sungnam Park
Pil-Kwon Yongin Jun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE10234710A1 publication Critical patent/DE10234710A1/de
Publication of DE10234710B4 publication Critical patent/DE10234710B4/de
Application granted granted Critical
Publication of DE10234710B8 publication Critical patent/DE10234710B8/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
DE10234710A 2001-12-11 2002-07-30 System zum Trocknen von Halbleitersubstraten Expired - Fee Related DE10234710B8 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR2001/78159 2001-12-11
KR10-2001-0078159A KR100456527B1 (ko) 2001-12-11 2001-12-11 마란고니 효과를 증대시키기 위한 건조 장비 및 건조 방법

Publications (3)

Publication Number Publication Date
DE10234710A1 DE10234710A1 (de) 2003-06-26
DE10234710B4 DE10234710B4 (de) 2008-08-14
DE10234710B8 true DE10234710B8 (de) 2008-11-27

Family

ID=19716880

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10234710A Expired - Fee Related DE10234710B8 (de) 2001-12-11 2002-07-30 System zum Trocknen von Halbleitersubstraten

Country Status (4)

Country Link
US (1) US6655042B2 (de)
JP (1) JP4012053B2 (de)
KR (1) KR100456527B1 (de)
DE (1) DE10234710B8 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040031167A1 (en) * 2002-06-13 2004-02-19 Stein Nathan D. Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife
KR100493849B1 (ko) * 2002-09-30 2005-06-08 삼성전자주식회사 웨이퍼 건조 장치
DE102004044394A1 (de) * 2003-11-04 2005-06-16 Samsung Electronics Co., Ltd., Suwon Vorrichtung und Verfahren zum Trocknen von Halbleitersubstraten
KR100653687B1 (ko) 2003-11-04 2006-12-04 삼성전자주식회사 반도체기판들을 건조시키는 장비들 및 이를 사용하여반도체기판들을 건조시키는 방법들
DE112005000692B4 (de) * 2004-04-02 2012-05-03 Tokyo Electron Ltd. Substratverarbeitungssystem, Substratverarbeitungsverfahren, Aufzeichnungsmedium und Software
KR100634376B1 (ko) * 2004-07-07 2006-10-16 삼성전자주식회사 기판 건조 장치
KR100672942B1 (ko) * 2004-10-27 2007-01-24 삼성전자주식회사 반도체 소자 제조에 사용되는 기판 건조 장치 및 방법
JP4758846B2 (ja) * 2005-11-18 2011-08-31 東京エレクトロン株式会社 乾燥装置、乾燥方法、及び乾燥プログラム、並びに、これらを有する基板処理装置、基板処理方法、及び基板処理プログラム
JP4666494B2 (ja) * 2005-11-21 2011-04-06 大日本スクリーン製造株式会社 基板処理装置
KR100753959B1 (ko) * 2006-01-12 2007-08-31 에이펫(주) 기판 건조장치를 이용한 기판 건조방법
JP4527670B2 (ja) 2006-01-25 2010-08-18 東京エレクトロン株式会社 加熱処理装置、加熱処理方法、制御プログラムおよびコンピュータ読取可能な記憶媒体
JP2008211038A (ja) * 2007-02-27 2008-09-11 Dainippon Screen Mfg Co Ltd 基板処理装置
TWI392046B (zh) * 2009-10-21 2013-04-01 Gallant Prec Machining Co Ltd 改良之基板乾燥系統及乾燥基板之方法
KR101325365B1 (ko) * 2012-10-11 2013-11-08 주식회사 케이씨텍 웨이퍼의 침지식 세정 건조 장치 및 이를 이용한 웨이퍼의 세정 건조 방법
KR102095474B1 (ko) * 2013-03-27 2020-04-01 삼성디스플레이 주식회사 유기 화합물 검출 장치 및 이를 구비한 표시 장치의 제조 설비
US11923210B2 (en) * 2018-08-30 2024-03-05 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for in-situ Marangoni cleaning
CN113488416B (zh) * 2021-07-06 2022-10-21 华海清科股份有限公司 晶圆后处理设备及其应用的通风系统

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10335299A (ja) * 1997-06-05 1998-12-18 Sony Corp ウェーハ乾燥装置
US5855077A (en) * 1995-12-04 1999-01-05 Samsung Electronics Co., Ltd. Apparatus for drying semiconductor wafers using isopropyl alcohol
US5884640A (en) * 1997-08-07 1999-03-23 Applied Materials, Inc. Method and apparatus for drying substrates
JP2000055543A (ja) * 1998-08-07 2000-02-25 Tokyo Electron Ltd 蒸気処理装置及び蒸気処理方法
JP2001074374A (ja) * 1999-06-29 2001-03-23 Kinmon Korutsu:Kk 乾燥装置および乾燥方法
DE10062199A1 (de) * 1999-12-14 2001-07-05 Tokyo Electron Ltd Substratprozessvorrichtung und Substratprozessverfahren
US20010015212A1 (en) * 1997-03-21 2001-08-23 Yates Donald L. Method of reducing water spotting and oxide growth on a semiconductor structure

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4876801A (en) * 1987-04-16 1989-10-31 Siemens Aktiengesellschaft Method and means for drying bulk goods
DE4138400C1 (de) * 1991-11-22 1993-02-18 Aichelin Gmbh, 7015 Korntal-Muenchingen, De
JPH1022256A (ja) * 1996-07-05 1998-01-23 Tokyo Electron Ltd 洗浄・乾燥処理装置及び洗浄・乾燥処理方法
JP3151613B2 (ja) * 1997-06-17 2001-04-03 東京エレクトロン株式会社 洗浄・乾燥処理方法及びその装置
JP3897404B2 (ja) * 1997-07-22 2007-03-22 オメガセミコン電子株式会社 ベーパ乾燥装置及び乾燥方法
KR20000073750A (ko) * 1999-05-13 2000-12-05 윤종용 웨이퍼 건조용 마란고니 타입 드라이 시스템
JP2000334395A (ja) * 1999-05-31 2000-12-05 Ebara Corp 洗浄装置
KR100354456B1 (ko) * 1999-10-27 2002-09-30 주식회사 기가트론 습식세정 및 건조장치와 그 방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5855077A (en) * 1995-12-04 1999-01-05 Samsung Electronics Co., Ltd. Apparatus for drying semiconductor wafers using isopropyl alcohol
US20010015212A1 (en) * 1997-03-21 2001-08-23 Yates Donald L. Method of reducing water spotting and oxide growth on a semiconductor structure
JPH10335299A (ja) * 1997-06-05 1998-12-18 Sony Corp ウェーハ乾燥装置
US5884640A (en) * 1997-08-07 1999-03-23 Applied Materials, Inc. Method and apparatus for drying substrates
JP2000055543A (ja) * 1998-08-07 2000-02-25 Tokyo Electron Ltd 蒸気処理装置及び蒸気処理方法
JP2001074374A (ja) * 1999-06-29 2001-03-23 Kinmon Korutsu:Kk 乾燥装置および乾燥方法
US6412501B1 (en) * 1999-06-29 2002-07-02 Kimmon Quartz Co., Ltd. Drying apparatus and drying method
DE10062199A1 (de) * 1999-12-14 2001-07-05 Tokyo Electron Ltd Substratprozessvorrichtung und Substratprozessverfahren

Also Published As

Publication number Publication date
US6655042B2 (en) 2003-12-02
KR100456527B1 (ko) 2004-11-09
KR20030047511A (ko) 2003-06-18
US20030106239A1 (en) 2003-06-12
JP2003297796A (ja) 2003-10-17
JP4012053B2 (ja) 2007-11-21
DE10234710B4 (de) 2008-08-14
DE10234710A1 (de) 2003-06-26

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8396 Reprint of erroneous front page
8364 No opposition during term of opposition
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee